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(Assignments 4) : I I I I I

The document contains 14 problems related to semiconductor physics and materials. The problems involve calculating properties like carrier concentration, resistivity, current density, and more for materials like silicon, germanium and gallium arsenide under different doping conditions and applied fields/voltages at various temperatures. The document also includes problems involving generation rates, diffusion currents, and Hall effect measurements.

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Ahmed Jamal
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105 views

(Assignments 4) : I I I I I

The document contains 14 problems related to semiconductor physics and materials. The problems involve calculating properties like carrier concentration, resistivity, current density, and more for materials like silicon, germanium and gallium arsenide under different doping conditions and applied fields/voltages at various temperatures. The document also includes problems involving generation rates, diffusion currents, and Hall effect measurements.

Uploaded by

Ahmed Jamal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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(Assignments 4)

1. The electron density in silicon at room temperature is twice the intrinsic density.
Calculate the hole density, the donor density and the Fermi energy relative to the
intrinsic energy. Repeat for n = 5 ni and n = 10 ni. Also repeat for p = 2 ni, p = 5 ni
and p = 10 ni, calculating the electron and acceptor density as well as the Fermi
energy relative to the intrinsic energy level.

2. Consider a homogeneous gallium arsenide semiconductor at T = 300 K with Nd


=1016 cm-3 and Na = 0. (a) Calculate the thermal-equilibrium values of electron
and hole concentrations. (b) For an applied E-field of 10 V/cm, calculate the drift
current density. (c) Repeat parts (a) and (b) if Nd = 0 and Na = 1016 cm-3.

3. A silicon crystal having a cross-sectional area of 0.001 cm2 and a length of 10-3
cm connected at its ends to a 10-V battery. At T = 100 K, we want a current of
100mA in the silicon. Calculate: (a) the required resistance R. (b) the required
conductivity (c) the density of donor atoms to be added to achieve this
conductivity. d) The concentration of acceptor atoms to be added to form a
compensated p-type material with the conductivity given from part (b) if the
initial concentration of donor atom Nd= 1015 cm-3.

17
4. A piece of n-type silicon (Nd = 10 cm-3) is uniformly illuminated with green
light (λ= 550 nm) so that the power density in the material equals 1 mW/cm2. a)
Calculate the generation rate of electron-hole pairs using an absorption coefficient
of 104 cm-1.b) Calculate the excess electron and hole density using the generation
rate obtained in (a) and a minority carrier lifetime due to Shockley-Read-Hall
recombination of 0.1 ms. c) Calculate the electron and hole quasi-Fermi energies
(relative to Ei) based on the excess densities obtained in (b).

5. (a) A silicon semiconductor is in the shape of a rectangular with a cross-section


area of 100µm2 a length of 0.1 cm, and is doped with 5 x 1016 cm-3 arsenic atom.
The temperature is T = 300 K. Determine the current if 5 V is applied across the
length. (b) Repeat part (a) if the length is reduced to 0.01 cm. (c) Calculate the
average drift velocity of electrons in parts (a) and (b).

6. (a) Calculate the resistivity a1 T = 300 K of intrinsic (i) silicon, (ii) germanium
and (iii) gallium arsenide. (b) If rectangular semiconductor bars are fabricated
using the materials in part (a), determine the resistance of each bar if its cross-
sectional area is 85 µm2 and length is 200 µm.

7. A silicon wafer has a 2-inch diameter and contains 1014 cm-3 electrons with a
mobility of 1400 cm2/V-sec. How thick should the wafer be so that the resistance
between the front and back surface equals 0.1 Ohm?

8. An n-type silicon sample has a resistivity of 5 Ω-cm at T = 300 K. (a) What is the
donor impurity concentration? (b) What is the expected resistivity at (i) T = 200 K
and (ii) T = 400 K.

9. Consider a sample of silicon at T = 300 K. Assume that the electron concentration


varies linearly with distance, as shown in Figure below. The diffusion current
density is found to be Jn = 0.19 A/cm2. If the electron diffusion coefficient is
Dn = 25 cm2/s, determine the electron concentration at x = 0.

10.

11. The electron concentration in silicon decreases linearly from 1016cm-3 to 1015 cm-3
over a distance of 0.10 cm. The cross-sectional area of the sample is 0.05 cm2.
The electron diffusion coefficient is 25 cm2/s. Calculate the electron diffusion
current.

12. An atomic system consists of three energy levels with energy 0, 10 and 20 meV,
which can contain a maximum of 1000, 2000 and 1000 electrons, respectively.
The total energy of the system in thermal equilibrium is 25 eV and the total
number of electrons is 2000. Calculate the Fermi energy and the temperature.
(Challenge problem).
13. A sample of silicon is doped with 1016 baron atoms per cm3. The Hall sample has
the same geometrical dimensions given in Example 5.7. The current is I = 1 mA
with Bz= 3.5 x 10-2 tesla. Determine the Hall voltage .

14. Germanium is doped with 5 x 1015 donor atoms per cm3 at T = 300 K. The
dimensions of the Hall device are d = 5 x 10-3 cm, W = 2 x 10-2 cm, and
L = 10-1 cm. The current is I = 250 µA. the applied voltage is VS = 100 mV. and
the magnetic flux density is Bz = 5 x 10-2 tesla. Calculate: (a) the Hall voltage, (b)
the Hall field and (c) the carrier mobility.

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