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The document contains 15 questions about semiconductor physics concepts such as intrinsic carrier concentration, Fermi energy level, donor and acceptor impurities, ionization, density of states, and calculating carrier concentrations based on doping and temperature. It asks the student to calculate values for intrinsic carrier concentration, density of states, and carrier concentration in various semiconductors like silicon, germanium, and gallium arsenide at different temperatures. It also contains questions about doped semiconductors and determining the Fermi energy level and carrier types.

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Ahmed Jamal
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37 views

Assignments 3

The document contains 15 questions about semiconductor physics concepts such as intrinsic carrier concentration, Fermi energy level, donor and acceptor impurities, ionization, density of states, and calculating carrier concentrations based on doping and temperature. It asks the student to calculate values for intrinsic carrier concentration, density of states, and carrier concentration in various semiconductors like silicon, germanium, and gallium arsenide at different temperatures. It also contains questions about doped semiconductors and determining the Fermi energy level and carrier types.

Uploaded by

Ahmed Jamal
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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(Assignments 3)

1. What is the value of the intrinsic carrier concentration in silicon at T = 300 K?

2. Under what condition would the intrinsic Fermi level be at the midgap energy?

3. What is a donor impurity? What is an acceptor impurity?

4. What is meant by complete ionization?

5. What is the product of no and po equal to?

6. At what temperature does the energy bandgap of silicon equal exactly 1 eV?

7. Calculate the Fermi function at 6.5 eV if E F = 6.25 eV and T = 300 K. Repeat at T


= 950 K assuming that the Fermi energy does not change. At what temperature
does the probability that an energy level at E = 5.95 eV is empty equal 1 %.

8. Calculate the effective density of states for electrons and holes in germanium,
silicon and gallium arsenide at room temperature and at 100 °C. Use the effective
masses for density of states calculations.

9. Calculate the intrinsic carrier density in germanium, silicon and gallium arsenide
at room temperature (300 K). Repeat at 100 °C. Assume that the energy bandgap
is independent of temperature and use the room temperature values.

10. Calculate the electron and hole density in germanium, silicon and gallium
arsenide if the Fermi energy is 0.3 eV above the intrinsic energy level. Repeat if
the Fermi energy is 0.3 eV below the conduction band edge. Assume that T =
300K.

11. A silicon wafer is doped with 1013 cm-3 shallow donors and 9 x 1012 cm-3 shallow
acceptors. Calculate the electron and hole density at 300 K. Use ni = 10 10 cm-3.

12. The intrinsic carrier concentration in silicon is to be no greater than no = 1x1012


cm-3. Assume Eg = 1.12 eV. Determine the maximum temperature allowed for the
silicon.

13. Determine the values of no and po for silicon at T = 300 K if the Fermi energy is
0.22 eV above the valence band energy.
14. The thermal equilibrium hole concentration in silicon at T = 300 K is po = 2×10-15
cm-3. Determine the thermal equilibrium electron concentration. Is the material n
type or p type?

15. Consider germanium at T = 300 K with donor concentrations of N d = 1014, 1016,


and 1018 cm-3. Let Na = 0. Calculate the position of the Fermi energy level with
respect to the intrinsic Fermi level for these doping concentrations.

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