FDS6676AS 30V N-Channel PowerTrench® SyncFET™

May 2008

tm
FDS6676AS
30V N-Channel PowerTrench® SyncFET™

General Description Features

The FDS6676AS is designed to replace a single SO-8 • 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6676AS • Includes SyncFET Schottky body diode
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. • Low gate charge (45nC typical)

• High performance trench technology for extremely low

RDS(ON) and fast switching
Applications
• DC/DC converter • High power and current handling capability

• Low side notebook • RoHS Compliant

D
D 5 4
D
D 6 3

7 2
G
S 8 1
S
SO-8 S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) 14.5 A
– Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS6676AS FDS6676AS 13’’ 12mm 2500 units

FDS6676AS Rev B2
©2008 Fairchild Semiconductor Corporation
 FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
∆BVDSS Breakdown Voltage Temperature ID = 10 mA, Referenced to 25°C 20 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.5 3 V
∆VGS(th) Gate Threshold Voltage ID = 10 mA, Referenced to 25°C –4 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = 10 V, ID = 14.5 A 4.5 6.0 mΩ
On–Resistance VGS = 4.5 V, ID = 13.2 A 5.9 7.25
VGS=10 V, ID =14.5A, TJ=125°C 6.7 8.5
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 10 V, ID = 14.5 A 66 S

Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 2510 pF
Coss Output Capacitance f = 1.0 MHz 710 pF
Crss Reverse Transfer Capacitance 270 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.6 2.8 Ω

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = 15 V, ID = 1 A, 10 20 ns
tr Turn–On Rise Time VGS = 10 V, RGEN = 6 Ω 12 22 ns
td(off) Turn–Off Delay Time 43 69 ns
tf Turn–Off Fall Time 29 46 ns
td(on) Turn–On Delay Time VDD = 15 V, ID = 1 A, 17 31 ns
tr Turn–On Rise Time VGS = 4.5 V, RGEN = 6 Ω 22 35 ns
td(off) Turn–Off Delay Time 34 54 ns
tf Turn–Off Fall Time 29 46 ns
Qg(TOT) Total Gate Charge at Vgs=10V 45 63 nC
Qg Total Gate Charge at Vgs=5V VDD = 15 V, ID = 14.5 A, 25 35 nC
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge 8 nC

FDS6676AS Rev B2
 FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

VSD Drain–Source Diode Forward VGS = 0 V, IS = 3.5 A (Note 2) 0.4 0.7 V
Voltage VGS = 0 V, IS = 7 A (Note 2) 0.5
trr Diode Reverse Recovery Time IF = 14.5A, 27 nS
IRM Diode Reverse Recovery Current diF/dt = 300 A/µs (Note 3) 1.9 A
Qrr Diode Reverse Recovery Charge 26 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50°/W when b) 105°/W when

mounted on a 1 in2 mounted on a .04 in2
pad of 2 oz copper pad of 2 oz copper

FDS6676AS Rev B2
 FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics

50 2.4
VGS = 10V 3.5V

DRAIN-SOURCE ON-RESISTANCE
2.2
40 VGS = 3.0V
ID, DRAIN CURRENT (A)

6.0V 4.5V 3.0V 2

RDS(ON), NORMALIZED
30 1.8

1.6
3.5V
20
1.4
4.0V
4.5V
1.2
10 6.0V
2.5V
1 10V

0 0.8
0 0.25 0.5 0.75 1 0 10 20 30 40 50
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4 0.016
ID = 14.5A ID = 7.3 A
DRAIN-SOURCE ON-RESISTANCE

VGS =10V
RDS(ON), ON-RESISTANCE (OHM)

0.014
1.2
RDS(ON), NORMALIZED

0.012

1 0.01
o
TA = 125 C
0.008
0.8
0.006
TA = 25oC

0.6 0.004
-55 -35 -15 5 25 45 65 85 105 125 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

50 100
VDS = 5V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)

40 10
ID, DRAIN CURRENT (A)

o
TA = 125 C
30 1

TA = 125oC -55oC
25oC
20 0.1

o -55oC
25 C
10 0.01

0 0.001
1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6676AS Rev B2
 FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)

10
3500
ID = 14.5A
f = 1MHz
VGS, GATE-SOURCE VOLTAGE (V)

3000 VGS = 0 V
8
VDS = 10V
2500

CAPACITANCE (pF)
20V
Ciss
6
2000
15V
4 1500
Coss
1000
2
500
Crss
0 0
0 10 20 30 40 50 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
SINGLE PULSE
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT 100us
RθJA = 125°C/W
1ms 40 TA = 25°C
ID, DRAIN CURRENT (A)

10 10ms
100ms
1s 30
10s
1
DC
20
VGS = 10V
0.1 SINGLE PULSE
o 10
RθJA = 125 C/W
o
TA = 25 C
0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE TRANSIENT

D = 0.5
RθJC(t) = r(t) * RθJC
RθJC = 125 °C/W
THERMAL RESISTANCE

0.2

0.1 0.1
0.05
P(pk
0.02
t1
0.01
0.01 t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6676AS Rev B2
 FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in Schottky barrier diodes exhibit significant leakage at high
parallel with PowerTrench MOSFET. This diode exhibits temperature and high reverse voltage. This will increase
similar characteristics to a discrete external Schottky the power in the device.
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6676AS. 0.1

IDSS, REVERSE LEAKAGE CURRENT (A)

TA = 125oC
0.01

0.001 TA = 100oC
0.8A/DIV

0.0001

TA = 25oC

0.00001
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)

Figure 14. SyncFET body diode reverse

10nS/DIV leakage versus drain-source voltage and
temperature.
Figure 12. FDS6676AS SyncFET body diode
reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse

recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6676).
0.8A/DIV

10nS/DIV

Figure 13. Non-SyncFET (FDS6676) body

diode reverse recovery characteristic.

FDS6676AS Rev B2
 FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics

VDS L
BVDSS
VGS tP
VDS
RGE DUT + IAS
VDD VDD
0V -
VGS tp IAS
vary tP to obtain
required peak IAS 0.01Ω
tAV
Figure 15. Unclamped Inductive Load Test Figure 16. Unclamped Inductive
Circuit Waveforms

Same type as

- +
VDD
QG(TOT)
-
VGS 10V
DUT
VGS QGS QGD

Ig(REF

Charge, (nC)

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform
tON tOFF
td(ON) td(OFF
RL
VDS VDS tr ) tf
90% 90%

VGS +
10% 10%
RGEN DUT VDD 0V

- 90%
VGS
VGSPulse Width ≤ 1µs 50% 50%

10%
Duty Cycle ≤ 0.1% 0V Pulse Width

Figure 19. Switching Time Test Figure 20. Switching Time Waveforms
Circuit

FDS6676AS Rev B2
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
This datasheet contains the design specifications for product development.
Advance Information Formative or In Design
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
No Identification Needed Full Production
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Obsolete Not In Production
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34

FDS6676AS Rev.B2