1. Calculate the forward bias current of a Si diode when forward bias voltage of 0.

4V is
applied, the reverse saturation current is 1.17×10-9A and the thermal voltage is 25.2mV.
a) 9.156mA
b) 8.23mA
c) 1.256mA
d) 5.689mA
Answer: a
Explanation: Equation for diode current
I=I0×(e(V/ηVT)-1) where I0 = reverse saturation current
η = ideality factor
VT = thermal voltage
V = applied voltage
Since in this question ideality factor is not mentioned it can be taken as one.
I0 = 1.17 x 10-9A, VT = 0.0252V, η = 1, V = 0.4V
Therefore, I= 1.17×10-9xe0.4/0.025 -1 = 9.156mA.

2. Calculate the thermal voltage when the temperature is 25°C.

a) 0V
b) 0V
c) 0.026V
d) 0.25V
Answer: b
Explanation: Thermal voltage VT is given by k T/q
Where k is the boltzman constant and q is the charge of electron. This can be reduced to
VT = TK/11600
Therefore, VT = 298.15/11600 = 0.0257V.

3. Calculate the reverse saturation current of a diode if the current at 0.2V forward bias is
0.1mA at a temperature of 25°C and the ideality factor is 1.5.
a) 5.5x 10-9 A
b) 5.5x 10-8 A
c) 5.5x 10-7 A
d) 5.6x 10-10 A
Answer: c
Explanation: Equation for diode current
I=I0×(e(V/ηVT ) -1) where I0 = reverse saturation current
η = ideality factor
VT = thermal voltage
V = applied voltage
Here, I = 0.1mA, η = 1.5, V= 0.2V, VT = TK/11600
Therefore, VT at T= 25+273=298 is 298/11600 = 0.0256V.

Therefore, reverse saturation current

IO=0.00055mA = 5.5×10-7A.

4. Find the applied voltage on a forward biased diode if the current is 1mA and reverse
saturation current is 10-10. Temperature is 25°C and take ideality factor as 1.5.
a) 0.68V
b) 0726V
c) 0.526V
d) 0.618V
Answer: d
Explanation: Equation for diode current
I=I0×(e(V/ηVT)-1) where I0 = reverse saturation current
η = ideality factor
VT = thermal voltage
V = applied voltage
VT at T= 25+273=298 is 298/11600 = 0.0256V, η = 1.5, I = 1mA, I0 = 10-10A

5. Find the temperature at which a diode current is 2mA for a diode which has reverse
saturation current of 10-9 A. The ideality factor is 1.4 and the applied voltage is 0.6V forward
bias.
a) 69.65°C
b) 52.26°C
c) 25.23°C
d) 70.23°C
Answer: a
Explanation: Equation for diode current
I=I0×(e(V/ηVT)-1) where I0 = reverse saturation current
η = ideality factor
VT = thermal voltage
V = applied voltage
I0 = 10-9A, η = 1.4, V =0.6V, I = 2mA
We know thermal voltage VT = TK/11600 .Therefore, TK = VTx11600 = 0x11600 = 342.65K
= 69.65°C.

6. Consider a silicon diode with η=1.2. Find change in voltage if the current changes from
0.1mA to 10mA.
a) 0.154V
b) 0.143V
c) .123V
d) 0.165V
Answer: b
Explanation: Equation for diode current
I=I0×(e(V/ηVT)-1) where I0 = reverse saturation current
η = ideality factor
VT = thermal voltage
V = applied voltage
η = 1.2, I2 = 10mA, I1 = 0.1mA and take VT = 0.026V

7. If current of a diode changes from 1mA to 10mA what will be the change in voltage across
the diode. The ideality factor of diode is 1.2.
a) 0.718V
b) 7.18V
c) 0.0718V
d) 0.00728V
Answer: c
Explanation: η = 1.2, I2 = 10mA, I1 = 1mA and take VT = 0.026V

8. What will be the ratio of final current to initial current of a diode if voltage of a diode
changes from 0.7V to 872.5mV. Take ideality factor as 1.5.
a) 90.26
b) 52.36
c) 80.23
d) 83.35
Answer: d
Explanation: η = 1.5, ΔV = 0.8725V and take VT = 0.026V

9. What will be the current I in the circuit diagram below. Take terminal voltage of diode as
0.7V and I0as 10-12A.

a) 2.4mA
b) 0.9mA
c) 1mA
d) 4mA
Answer: a
Explanation: Let VD be the voltage of diode, then by Kirchoff’s loop rule
3V = VD + IR1
This method of assumption contains small error but it is the simplest method.
Let VD be 0.7V. Now the current I = (3-0.7)/1k = 2.3mA. Now the diode voltage for 2.3mA
VD = VT ln⁡(I/I0) = 0.026 x ln((2.3×10(-3))/10(-12)) = 0.5864V.
Now the current becomes (3-0.5864)/1000 = 2.41mA.

10. Find current I through the circuit using characteristic equation of diode. The terminal
voltage of each diode is 0.6V. Reverse saturation current is 10-12A.

a) 0.84mA
b) 1.84mA
c) 2.35mA
d) 3.01mA
Answer: b
Explanation: Let VD be the voltage of diode, then by Kirchoff’s loop rule
3V = 2VD + IR1
This method of assumption contains small error but it is the simplest method.
Let VD be 0.6V. Now the current I = (3-1.2)/1k = 1.8mA.
The VD = VT ln((I/IO)+1) = 0.58V
Hence current is (3-(2×0.58))/1k =1.84mA.

11. Find the current I if both diodes are identical. Voltage V = 0.8V and let the reverse
saturation current be 10-9A.

a) 4.8mA
b) 3.2mA
c) 2.5mA
d) 7mA
Answer: a
Explanation: Since both diodes are identical VD = 0.8/2 = 0.4V
Equation for diode current

where I0 = reverse saturation current

η = ideality factor
VT = thermal voltage
V = applied voltage
Since in this question ideality factor is not mentioned it can be taken as one. Take V T as
0.026 which is the standard value.
Hence current through one diode is 10-9x(e0.4/0.026) = 4.8mA.

12. Find voltage VOUT if the reverse saturation current of the diode is 1.1×10-8A, the cut-in
voltage of diode is 0.6V and assume the temperature as 25oC.

a) 0.235V
b) 0.3148V
c) 0.456V
d) 0.126V
Answer: b
Explanation: Equation for diode current

where I0 = reverse saturation current

η = ideality factor
VT = thermal voltage
V = applied voltage
Since in this question ideality factor is not mentioned it can be taken as one. Take V T as its
standard value 0.026V.
Voltage VD = ηVTln(I/IO + 1) = 1 x 0.0257ln (2 x 10-3/(1.1 x 10-9))+1) = 0.0257ln(1,818,182)
= 0.3704 V.

13. The current Ix in the circuit is 1mA then find the voltage across diode D1. The resistance
R1 is 1KΩ. Assume the reverse saturation current is 10-9A. Voltage across resistor in this
condition was 0.4V. Take VT of diode as 0.026V.

a) 2.3mA
b) 3.2mA
c) 5.2mA
d) 4.6mA
Answer: c
Explanation: Since voltage drop across diode is 0.4V current through resistor is 0.4/1k =
0.4mA
Current through diode

where I0 = reverse saturation current

η = ideality factor
VT = thermal voltage
V = applied voltage
Since ideality factor is not given take it as one.
Current through diode I= 10-9 x (e0.4/0.026) = 4.8mA
Total current =4.8mA+0.4mA = 5.2mA.
14. Find the current Ix if the voltage across the diode is 0.5V. The reverse saturation current
of diode 10-11A, the cut-in voltage of diode is 0.6V. Assume that the temperature at which
diode operates is 25°C. The resistance R1=2KΩ.

a) 3.97mA
b) 4.51mA
c) 2.45mA
d) 3.05mA
Answer: d
Explanation: Since voltage drop across diode is 0.5V current through resistor is 0.5/2k =
0.25mA
Current through diode

where I0 = reverse saturation current

η = ideality factor
VT = thermal voltage
V = applied voltage
Since ideality factor is not given take it as one.
Current through diode I = 10-11 x (e0.5/0.0257) = 2.8mA
Total current = 2.8mA + 0.25mA = 3.05mA.

15. If the current I is 2mA then find the temperature at which diode operates. The cut-in
voltage of diode is 0.6V. The reverse saturation current of diode is 10-9A. Resistance R is
1.3KΩ.

a) 45.85°C
b) 50.47°C
c) 60.26°C
d) 56.89°C
Answer: a
Explanation: Equation for diode current

where I0 = reverse saturation current

η = ideality factor
VT = thermal voltage
V = applied voltage
Since in this question ideality factor is not mentioned it can be taken as one.
VD = 3-(2mAx1.3k) = 0.4V

VT = T/11600
Thus Temperature, T = 11600×0.0275 = 319 Kelvin = 45.85°C.

16. If the temperature increases 10°C, the ratio of final reverse saturation current to initial
reverse saturation current is _______
a) 1
b) 2
c) 1.5
d) 3
Answer: b
Explanation: The equation relating final reverse saturation current (Io2 ) to initial reverse
saturation current (Io1 ) is given by
Io2 = 2(∆T/10)Io1 Where ∆T is temperature change
Ratio will be 2(∆T/10) = 21 = 2.

17. The reverse saturation current of a diode at 25°C is 1.5 x 10-9A. What will be reverse
current at temperature 30°C?
a) 3 x 10-9A
b) 2 x 10-9A
c) 2.12 x 10-9A
d) 1.5 x 10-9A
Answer: c
Explanation: The equation relating final reverse saturation current (Io2) to initial reverse
saturation current (Io1 ) is given by
Io2 = 2(∆T/10)Io1 Where ∆T is temperature change
Here ∆T = 5, Therefore, Io2 = 25/10 Io1 =1.414×1.5 x 10-9A = 2.121 x 10-9A.
18. How much times reverse saturation current will increase if temperature increases 15 oC?
a) 2.52
b) 4.62
c) 4.12
d) 2.82
Answer: d
Explanation: The equation relating final reverse saturation current (Io2) to initial reverse
saturation current (Io1) is given by
Io2 = 2(∆T/10)Io1 Where ∆T is temperature change
Ratio is 215/10 = 2.82.

19. The input voltage V1 of the circuit the circuit is 2V and resistor has a resistance of 1KΩ.
The cut-in voltage of the silicon diode is 0.7V and the reverse saturation current is 10-8A. The
temperature at which diode operates is 30°C. The voltage across resistor when diode starts
conducting is _________________

a) 0.7V
b) 1.3V
c) 0.306V
d) 1.7V
Answer: b
Explanation: V1 = IR1 + VD
For silicon diode, cut-in voltage is 0.7V.
Hence IR1 = 2-0.7 = 1.3V
Drop across the resistor is 1.3V.

20. If V1 is 5V and resistance R1 is 5KΩ and the cut-in voltage of the diode is 0.7V, what
will be the voltage Vout across the diode? Take reverse saturation current as 10-8A and
operating temperature as 25°C.
a) 0V
b) -4.5V
c) -5V
d) -3.2V
Answer: c
Explanation: Since diode is in reverse bias mode voltage across diode will be almost the same
as the applied voltage. Since the current in the circuit is in micro amperes voltage drop at
R1 is negligible.

21. What is quiescent point or Q-point?

a) Operating point of device
b) The point at which device have maximum functionality
c) The point at which current equal to voltage
d) The point of V-I graph where slope is 0.5
Answer: a
Explanation: Quiescent point of a device represents operating point of a device. For a diode
quiescent point is determined by constant DC current through the diode. The Q-point is the
DC voltage or current at a specified terminal of an active device with no input applied. A bias
circuit is used to supply this steady voltage/current.

22. The reciprocal of slope of current-voltage curve at Q-point gives _____________

a) AC resistance
b) Nominal resistance
c) Maximum dynamic resistance
d) Minimum impedance
Answer: a
Explanation: Reciprocal of slope of I-V graph at q-point gives AC or dynamic resistance. The
inverse of slope will be change in voltage by change in current which is known as dynamic
resistance.

23. As the slope of I-V graph at the Q point increases, AC resistance will _____________
a) Increase
b) Decrease
c) Either increase or decrease
d) Neither increase nor decrease
Answer: b
Explanation: Slope of I-V graph at q-point is reciprocal of dynamic or AC resistance.
Therefore, as slope increases resistance decreases.

24. Static resistance of a diode is ____________

a) Resistance at the q-point, ΔVD/ΔID
b) Maximum AC resistance
c) Minimum AC resistance
d) Resistance at operating point, VD/ID
Answer: b
Explanation: Static or DC resistance of a diode is the resistance offered by a diode at its q-
point. DC resistance represents steady state. That is, it is calculated by treating current and
voltage as constants.

25. Average AC resistance and dynamic resistance are ____________

a) Always Equal
b) Never equal
c) Both represents same quantity
d) Calculated from V-I graph
Answer: d
Explanation: Average AC resistance and dynamic or AC resistance are not exactly the same.
They both measure the resistance in different ways. AC resistance is slope of the tangent of
the curve of characteristic graph at Q-point. But average AC resistance is measured by
measuring the slope of straight line between the limits of operation.

26. After cut-in voltage AC resistance of diode ____________

a) Slightly decreases
b) Decreases exponentially
c) Slightly increases
d) Increases exponentially
Answer: b
Explanation: After cut-in voltage current exponentially increases with small increase in
voltage. This will considerably reduce resistance.

27. DC resistance of diode is measured at ____________

a) Knee current
b) Cut-in voltage
c) Q-point
d) Reverse breakdown point
Answer: c
Explanation: Static or DC resistance of a diode is the resistance offered by a diode at its q-
point. DC resistance represents steady state. That is, it is calculated by treating current and
voltage as constants.
28. Determine DC resistance of a diode described by characteristic graph at I D = 10mA.

a) 90 Ω
b) 111.1 Ω
c) 101.0 Ω
d) 100 Ω
Answer: a
Explanation: Static or DC resistance is the resistance of a diode at its operating point.
That is DC resistance = 0.9/10mA = 0.9×1000/10 = 90Ω.

29. For a diode, at 10mA DC resistance is 70Ω. The voltage corresponding to 10mA will be
____________
a) 0.5V
b) 0.6V
c) 0.7V
d) 0.8V
Answer: c
Explanation: Static or DC resistance is the resistance of a diode at its operating point.
Resistance = voltage/current
Therefore, voltage = current x resistance = 10mA x70 =0.7V

30. Calculate the DC resistance of diode at VD= -10V from the characteristic graph given
below.
a) 1MΩ
b) 10MΩ
c) 15MΩ
d) 5MΩ
Answer: b
Explanation: Static or DC resistance is the resistance of a diode at its operating point.
Static resistance at -10V = 10V/current at -10V =10/1µA =10MΩ.

31. In ideal diode model diode in forward bias is considered as a ___________

a) Resistor
b) Perfect conductor
c) Perfect insulator
d) Capacitor
Answer: b
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.

32. In ideal diode model diode in reverse bias is considered as a ___________

a) Resistor
b) Perfect conductor
c) Perfect insulator
d) Capacitor
Answer: c
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.

33. Voltage drop produced by a diode at forward bias in ideal diode model is equal to
___________
a) 0.7V
b) 0.3V
c) 1V
d) 0V
Answer: d
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.

34. The current I through the circuit if we consider diode in ideal diode model.

a) 3mA
b) 3A
c) 1A
d) 0.4mA
Answer: a
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero. Since diode is forward biased current
I = (3V/1K) = 3mA.

35. The voltage VOUT across the ideal diode if VIN is-5V and resistance R1=10KΩ is
___________

a) -5V
b) 0V
c) -2.5V
d) 2.5V
Answer: a
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero. Since diode is reverse bias no current flows
through the circuit so entire voltage appears on diode.

36. The current I through the circuit I if voltage v = -3V is _______________

a) 0A
b) 3A
c) 1.5A
d) 6A
Answer: a
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero. Since diode is reverse bias no current will
flow through the circuit.

37. If current source I produces a current of 1mA and resistance R=3kΩ, then what is the
voltage across the resistor given that diode is ideal?

a) 0V
b) 1V
c) 3V
d) 1.5V
Answer: a
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
Since current forward biases the diode it acts as a conductor so current through resistor is
zero so voltage is zero. Therefore, voltage across resistor is zero.

38. If resistance R1 is 10KΩ, V2 = 2V, V1 = 3V and the diode is ideal, then the current I
through the circuit will be ___________
a) 0.3mA
b) 0.6mA
c) 0.7mA
d) 0.1mA
Answer: d
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
Since the diode is in reverse bias, it can be considered open and no current flows through it.
Then effective voltage becomes 3-2 = 1V so current is 1/10K = 0.1mA.

39. If resistance R1 is 10K, V2 = – 2V, V1 = 3V and the diode is ideal then the current I
through the circuit will be _________

a) 0.2mA
b) 0A
c) 0.5mA
d) 0.3mA
Answer: d
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
The voltage V2 forward biases the diode so in effect V2 Vanishes. Also V1 is in reverse bias
to the diode so it will not pass through diode. Therefore, effective current will be
(3V/10K) = 0.3mA.
40. What will be the voltage Vout if VA = 3V and VB = -5V and the diodes are ideal?

a) 5V
b) 3V
c) 2V
d) 0V
Answer: b
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero. Since first diode is in forward bias and
second diode is in reverse bias. So Only first diode will pass the current.

41. Find the voltage across the resistor R if VA = -3V and VB = -5V. Use ideal diode model
assumption.

a) 0V
b) -3V
c) -5V
d) -4V
Answer: a
Explanation: In an ideal diode model, the diode is considered as a perfect conductor in
forward bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero
and current through the diode at reverse bias is zero.
Since both the diodes are in reverse bias mode, current through the diode is zero and we can
consider the diode as an open circuit. So there is no voltage drop across resistor R.

42. Find current I if voltage V = 5V, VB = 2V, R1 & R2 = 2K. Use ideal diode model
assumption.
a) 1.5mA
b) 1.375mA
c) 2mA
d) 3mA
Answer: d
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
The diode is forward biased and can be considered as a short circuit.
So voltage across R1 is V-VB.
That is 3V. Therefore, current through R1 = 3V/2k = 1.5mA.
Current through R2 = 3/2K = 1.5mA.
Therefore, total current I = 1.5+1.5 = 3mA.

43. Find current I if V = 5V and -5V when VB = 2V, R1 = 2KΩ, R2 = 4KΩ and the diode is
ideal.

a) 0A and 1.3mA
b) 1.231mA and 0.33mA
c) 3.25mA and 0A
d) 1.58mA and 0A
Answer: c
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
When V=5V, the diode is forward biased and can be considered as a short circuit.
Current through resistor R1 = V/2k = 2.5mA.
Current through resistor R2 = (V – VB ) /4k = 0.75mA.
So total current is 3.25mA.
At V = -5V, diode is reverse bias So the current is zero.

44. The output voltage V if Vin = 3V, R=5KΩ, VB = 2V in a ideal diode is __________

a) 1V
b) 4V
c) 3V
d) 2V
Answer: c
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
The diode above is reverse biased and ideally can be considered as an open circuit. So output
is the voltage Vin = 3V.

45. In the circuit below VB = 2V, Vin = 5V. The voltage V across resistor R in ideal diode is
__________

a) 5V
b) 2V
c) 3V
d) 0V
Answer: d
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
Since the diode is in reverse bias, no current flows through it and thus through the resistor
too. Thus voltage across resistor is zero.

46. In the circuit Vin = 4V, VB = 3V, R = 5K. The voltage across diode V is __________

a) 1V
b) 4V
c) 3V
d) 7V
Answer: a
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
Since Vin reverse biases the diode and VB forward biases the diode So total voltage across
diode is Vin-VB.

47. In the circuit below Vin = 4V, R = 2K and VB = 2V. In these conditions the voltage across
ideal diode V is __________

a) -4V
b) -2V
c) 2V
d) 0V
Answer: d
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
Since net voltage Vin – VB = 2V forward biases the diode, it can be considered as a short
circuit and the voltage across diode is zero.
48. In the circuit shown in below I = 2mA, VB = 2V and R = 2K. The voltage V will be
_________

a) 2V
b) -2V
c) -4V
d) 1V
Answer: b
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
Assuming diode to be forward biased, KCL can’t be applied correctly at the node. Hence
diode is reverse biased. The diode can be considered as an open circuit and the current flows
through resistor R only. Hence voltage V= -2V.

49. In the circuit shown in below I = 2mA, VB = 2V and R = 2K. The voltage V will be
____________

a) 2V
b) 3V
c) 6V
d) 5V
Answer: a
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
Consider that diode is reverse biased. But, that does not satisfy KCL at the node. No
incoming current is present. Hence diode is forward biased and short-circuited. Hence the
output voltage = V = VB = 2V.
50. For circuit shown below Vin = 3V, R1 = 6K, R2 = 2K. The voltage V will be ________

a) 3V
b) 0.75V
c) 1V
d) 1.134V
Answer: a
Explanation: In ideal diode model the diode is considered as a perfect conductor in forward
bias and perfect insulator in reverse bias. That is voltage drop at forward bias is zero and
current through the diode at reverse bias is zero.
Since diode is forward biased entire voltage will appear across R2.

51. After cut-in voltage in piecewise linear model diode act as a ___________
a) Resistor
b) Capacitor
c) Conductor
d) Insulator
Answer: a
Explanation: After cut –in voltage diode act as a resistor in piecewise linear mode. In normal
operation diode current is exponentially related to voltage.

52. Reverse biased condition of a diode in piecewise linear model is equivalent to

__________
a) Resistor
b) Capacitor
c) Conductor
d) Insulator
Answer: d
Explanation: For a diode in reverse bias mode current through the diode is in micro amperes
or nano amperes. Hence we can assume it as zero. In piecewise linear model reverse current
is assumed to zero. That is, as an insulator.

53. Voltage drop produced by a diode in piecewise linear mode is __________

a) Constant and equal to knee voltage
b) Varies linearly with voltage after knee voltage
c) Varies exponentially with voltage after knee voltage
d) Constant and equal to twice of knee voltage
Answer: b
Explanation: Voltage drop produced by diode in piecewise linear model is not constant. Since
it contains effect of resistor, the diode voltage linearly increases as input voltage increases.

54. In the given circuit voltage V = 2V.cut-in voltage of diode is 0.7V. Forward resistance is
10Ω. The current I through the circuit is ____________
(Assume piecewise linear model for diode)

a) 0.235mA
b) 1.29mA
c) 1.63mA
d) 2.27mA
Answer: d
Explanation: Since diode is in forward bias mode it can replaced by the equivalent circuit

I = (V-VD)/R1+RD
= (3-0.7)/1010 = 2.27mA.

55. In the given circuit input voltage Vin is 3V and V2 is 1V. The resistance R1 is 1.5K. Cut-
in voltage of diode is 0.5V. Forward bias resistance is 10Ω. The current I will be __________

a) 2.03mA
b) 0.23mA
c) 1.58mA
d) 1.33mA
Answer: d
Explanation: Since both voltage sources are reverse bias to the diode, diode in the circuit
disappears and equivalent circuit becomes as follows

So current I = V1-V2/R
= 3-1/1.5k = 1.33mA.

56. In the given circuit input voltage V1 is -3V and V2 is -1V. The resistance R1 is 1K. Cut-in
voltage of diode is 0.5V. Forward bias resistance is 10Ω. The approximate current I is
_________
(Use piecewise linear model of diode)

a) -1mA
b) -2mA
c) -0.2mA
d) -0.1mA
Answer: b
Explanation: Since both voltage sources are in forward bias to diode, the equivalent circuit
will be as follows

Since voltage across diode is 1V. current I = -3+1/1k = -2mA.

57. In the given circuit input voltage V is 2V and VB is 1V. The resistance R1 and R2 is 1K.
Cut-in voltage of diode is 0.5V. Forward bias resistance is 10Ω. The current I will be
(Use piecewise linear model of diode)
a) 0.29mA
b) 0.21mA
c) 0.36mA
d) 0.15mA
Answer: a
Explanation: Since V-VB = 1V forward biases the diode, we can use equivalent circuit of
diode as follows

Current through R1, I1 = 1V/R1 = 1mA.

Current through R2, I2 = (1-VD )/(R2¬+RD) = (1-0.7)/1010 = 0.297mA.

58. In the given circuit input voltage V is 3V and VB is 1V. The resistance R1 and R2 is 1K.
Cut-in voltage of diode is 0.5V. Forward bias resistance is 10Ω. The current I will be
(Use piecewise linear model of diode)

a) 0.96mA
b) 2.13mA
c) 1.56mA
d) 1.23ma
Answer: c
Explanation: Since diode is in forward bias we can assume equivalent circuit model and
assume following circuit

Let voltage across diode is V0 now voltage across branch is V-V0

Current I = (2-V0)/R1 +(2-V0-VB)/R2 =(2-V0)/1000+((1-V0 ))/1000 …………………….(1)
V0 = VD+ IRD = 0.7+10I
Put this value in eq(1)
That is, I = (2-0.7-10I)/1000+((1-0.7-10I))/1000 => 1000I = 1.6 – 20I => 1020 I = 1.6
That is, I = 1.6/1020 = 1.56mA.

59. In the given circuit input voltage V is -3V and VB is 1V. The resistance R1 and R2 is 1K.
Cut-in voltage of diode is 0.5V. Forward bias resistance is 10Ω. The current I will be
(Use piecewise linear model of diode)

a) 1.2mA
b) 0mA
c) 0.8mA
d) 1mA
Answer: b
Explanation: If we suppose diode to be forward biased then voltage across R1 is -2.5V and
current flows from bottom to top in that link. For source VB current flows the same but then
KCL can’t be applied at the top node since all currents are incoming. Hence the diode is
reverse biased and is an open circuit. No current flows through it and I=0.

60. In the given circuit input voltage Vin is 3V and VB is 1V. The resistance R is 1K. Cut-in
voltage of diode is 0.5V. Forward bias resistance is 10Ω. The current I will be
(Use piecewise linear model of diode)
a) 1V
b) 3V
c) 2.3V
d) 1.3V
Answer: b
Explanation: If we consider diode as a short circuit, the voltage in circuit is thus 3-1=2V and
current flows from top to bottom across diode. But that only happens in a reverse bias of the
diode. Hence the diode is in reverse bias and open. Output voltage V=3V.

61. Which of the following is not known as transition capacitance?

a) Junction capacitance
b) Space-Charge capacitance
c) Diffusion capacitance
d) Barrier capacitance
Answer: c
Explanation: Transition capacitance is the capacitance exhibited by a diode due to the p-side
and n-side of the diode is separated by a distance of depletion width same as in an electrolytic
capacitor. It occurs in a reverse biased diode. The other name for this is Junction capacitance,
Space-Charge capacitance, Barrier capacitance, Depletion region capacitance. Diffusion
capacitance is due to the transport of charge carriers between the two terminals of the device.
It occurs in a forward biased diode.

62. Which of the following is not known as transition capacitance?

a) Depletion region capacitance
b) Space-Charge capacitance
c) Nominal capacitance
d) Junction capacitance
Answer: c
Explanation: Transition capacitance is the capacitance exhibited by a diode due to the p-side
and n-side of the diode is separated by a distance of depletion width same as in an electrolytic
capacitor. It occurs in a reverse biased diode. The other name for this is Junction capacitance,
Space-Charge capacitance, Barrier capacitance, Depletion region capacitance. Diffusion
capacitance is due to the transport of charge carriers between the two terminals of the device.
It occurs in a forward biased diode.

63. Transition capacitance of a diode is directly proportional to ____________

a) Area of cross section
b) Width of depletion region
c) Reverse voltage applied across the terminals
d) Drift current
Answer: a
Explanation: Transition capacitance is the capacitance exhibited by a diode due to the p-side
and n-side of the diode is separated by a distance of depletion width same as in an electrolytic
capacitor.
The equation of transition capacitance = ƸA/W
Where Ƹ = permittivity of the material of diode, W = depletion width
A = area of cross section.

64. Transition capacitance of a diode is inversely proportional to __________

a) Area of cross section
b) Width of depletion region
c) Relative permittivity
d) Drift current
Answer: b
Explanation: Transition capacitance is the capacitance exhibited by a diode due to the p-side
and n-side of the diode is separated by a distance of depletion width same as in an electrolytic
capacitor.
The equation of transition capacitance = ƸA/W
Where Ƹ = permittivity of the material of diode, W = depletion width
A = area of cross section.

65. As reverse bias voltage increases transition capacitance __________

a) Increases
b) Decreases
c) Doesn’t depend upon voltage
d) Constant
Answer: b
Explanation: Transition capacitance is the capacitance exhibited by a diode due to the p-side
and n-side of the diode is separated by a distance of depletion width same as in an electrolytic
capacitor.
The equation of transition capacitance = ƸA/W
Where Ƹ = permittivity of the material of diode, W = depletion width
A = area of cross section
As reverse bias increases depletion width also increases hence transition capacitance
decreases.

66. What is the dependence of the transition capacitance on relative permittivity?

a) Inversely proportional to relative permittivity
b) Directly proportional to relative permittivity
c) Independent of relative permittivity
d) Directly proportional to relative permittivity with a degree of 2
Answer: b
Explanation: Transition capacitance is the capacitance exhibited by a diode due to the p-side
and n-side of the diode is separated by a distance of depletion width same as in an electrolytic
capacitor.
The equation of transition capacitance = ƸA/W
Where Ƹ = permittivity of the material of diode, W = depletion width
A = area of cross section
Relative permittivity is directly proportional to the permittivity of the material.

67. For a diode the transition capacitance was 10pF. The depletion width changed from 1µm
to 10 µm. All other conditions remain unchanged. The new diode capacitance is __________
a) 5pF
b) 1.414pF
c) 1pF
d) 10pF
Answer: c
Explanation: The equation of transition capacitance = ƸA/W
Where Ƹ = permittivity of the material of diode, W = depletion width
A = area of cross section
Since depletion width increased 10 times and all other quantities are the same, the
capacitance decrease by 10 times.

68. For a diode the transition capacitance was 15pF. The diode is replaced with another diode
of same material with twice cross sectional area. Terminal voltage remains unchanged. The
capacitance of new diode is __________
a) 15pF
b) 30pF
c) 60pF
d) 7.5pF
Answer: b
Explanation: The equation of transition capacitance = ƸA/W
Where Ƹ = permittivity of the material of diode, W = depletion width
A = area of cross section
Since A becomes 2A capacitance also doubles.

69. A diode is replaced with another diode of different material. The ratio of relative
permittivity of new material to old is 0.5. The initial capacitance was 20pF, then final
capacitance will be __________
a) 15pF
b) 20pF
c) 10pF
d) 2pF
Answer: c
Explanation: The equation of transition capacitance = ƸA/W
Where Ƹ = permittivity of the material of diode, W = depletion width
A = area of cross section
Since permittivity becomes half capacitance also halves.

70. A diode had a transition capacitance of 1pF and depletion width of 1 µm. The capacitance
changes to 10 pF when the depletion width changes. The final depletion width is __________
a) 10 µm
b) 0.1 µm
c) 1 µm
d) 100 µm
Answer: b
Explanation: The equation of transition capacitance = ƸA/W
Where Ƹ = permittivity of the material of diode, W = depletion width
A = area of cross section
Since depletion with and capacitance are inversely proportional
Depletion width decreases to 0.1 µm.

71. Which of these is the odd one in the choices?

a) Transition capacitance
b) Diffusion capacitance
c) Space charge capacitance
d) Depletion layer capacitance
Answer: b
Explanation: Transition capacitance is the junction capacitance in a reverse biased diode. The
rate of change of immobile charges wrt a change in reverse bias voltage is called transition
capacitance, or space charge or depletion layer capacitance.
72. Consider two diodes, A is step graded, B is linear graded. Find the ratio of the
capacitance of A to B, when the applied voltage in reverse bias is 64V.
a) 0.2
b) 2
c) 0.5
d) 5
Answer: d
Explanation: In A, CA ∝ 1√V

CB ∝ 1/3√V
CA/CB=4/8=1/2 = 0.5.

73. Consider 2 reverse biased diodes. If the ratio of applied reverse bias voltages is 0.5, find
the ratio of transition capacitances of the 2 diodes.
a) 2
b) 4
c) 1.31
d) 2.6
View Answer
Answer: c
Explanation: CT1/CT2=(V2/V1)1/2.5
CT1/CT2=21/2.5 = 1.31.
74. The transition capacitance depends on the forward current of the diode.
a) True
b) False
View Answer
Answer: b
Explanation: Diffusion capacitance is present in the forward bias and transition capacitance is
present in reverse bias. Hence it is diffusion capacitance which is proportional to the forward
current of diode, not transition capacitance.
75. Capacitance per unit area at no reverse bias is 2 pF/cm2. For a step graded diode of area
5cm2, what is net capacitance at 99 V reverse bias voltage?
a) 2pF
b) 5pF
c) 0.1pF
d) 1pF
View Answer
Answer: d
Explanation: Co=2pf/cm2
C = CO*A/(1 + 99)0.5 = 2pF x 5/10 = 1pF.
76. From the circuit and the diode characteristics given alongside, and assuming R=2k, what
is the value of diode voltage at the operating point?

a) 0.78 V
b) 10 V
c) 0 V
d) 1v
Answer: a
Explanation: On drawing the load line with the equation: VD = ED + IDRD, we get the
operating point with the value of at voltage at around 0.7-0.8 V. Hence, VDq=0.78 V.

77. From the circuit and the diode characteristics given and assuming R=1k, what is the value
of diode current at operating point?
a) 20 mA
b) 9.3 mA
c) 0 mA
d) 10 mA
Answer: b
Explanation: On drawing the load line with the equation: VD = ED + IDRD, we get the
operating point with the value of current at around 9.2-9.4 mA. Hence, IDq=9.3 mA

78. From the circuit and the diode characteristics given and assuming R=1k, what is the value
of voltage across the resistor at operating point?
a) 10 V
b) 0 V
c) 9.3 V
d) 10.7 V
Answer: c
Explanation: We know that VR=IDR = 9.3 x 1 = 9.3 V.

79. From the given load line characteristics, what is the relation between R1 and R2 ,
assuming constant source EMF?

a) R1 > R2
b) R1 = R2
c) R1 < R2
d) R1 >= R2
Answer: c
Explanation: Here, the y-intercept=E/R hence, lower the y-intercept, higher the value of R,
Hence, R1<R2

80. What is the change in voltage across the resistor when the load line is shifted from R1 to
R2?

a) 0 V
b) 9.25 V
c) 10 V
d) 9 V
Answer: a
Explanation: The value of voltage calculated across resistor is calculated by E-VD, which is
constant for both cases.

81. From the given load characteristics, what is the value of diode current at operating point
for the characteristics of R2?

a) 9.3 mA
b) 4.6 mA
c) 0 mA
d) 10 mA
Answer: b
Explanation: At the point of intersection, the value of current is around 4.6 mA.

82. From the given load characteristics, what is the value of diode voltage at operating point
for the characteristics of R2?

a) 0 V
b) 10 V
c) 0.7 V
d) 1 V
Answer: c
Explanation: At the point of intersection, the value of diode voltage is approximately 0.7 V

83. Using the approximate equivalent model of a silicon diode and taking E=10 V and R=1k,
what is the value of diode voltage at operating point?
a) 0.7 V
b) 0.3 V
c) 10 V
d) 9.3 V
Answer: a
Explanation: In the approximate equivalent model, the diode voltage is fixed at the forward
bias threshold voltage, which for a silicon diode is equal to 0.7 V

84. Using the approximate equivalent model of a silicon diode and taking E=10 V and R=1k,
what is the value of diode current at operating point?
a) 9.25 mA
b) 10 mA
c) 0 mA
d) 9.5 mA
Answer: a
Explanation: In the approximate equivalent model, the characteristic is assumed to be a
vertical upward line at V=0.7 V. Hence, the current at point of intersection is determined to
be 9.25 mA

85. Using the ideal diode model of a silicon diode and taking E=10 V and R=1k, what is the
value of diode voltage at operating point?
a) 0.7 V
b) 0 V
c) 10 V
d) 0.3V
Answer: b
Explanation: In ideal diode model, we take the forward threshold voltage to be zero. Hence
the diode characteristic is represented as the upper half of the y-axis. Hence, VD = 0 V.

86. DC average current of a half wave rectifier output is ___________

(Where Im is the maximum peak current of input)
a) 2Im/ᴨ
b) Im/ᴨ
c) Im/2ᴨ
d) 1.414Im/ᴨ
View Answer
Answer: b
Explanation: Average DC current of half wave rectifier is Im/ᴨ . Since output of half wave
rectifier contains only one half of the input. The average value is the half of the area of one
half cycle of sine wave with peak Im. This is equal to Im/ᴨ.
Thus this is calculated by Area of graph of current/Perion.
IDC=1/2π∫idx between 0 to 2π.
This is equal to Im/ᴨ.
87. DC power output of half wave rectifier is equal to ____________
(Im is the peak current and RL is the load resistance)
a) (2Im2/ ᴨ2)RL
b) (Im2/2 ᴨ2)RL
c) (Im2/ ᴨ2)RL
d) (4Im2/ ᴨ2)RL
View Answer
Answer: c
Explanation: Average DC power of half wave rectifier output is (Im2/ ᴨ2)RL. Since power is
VDC * IDC,
= Im/ᴨ x Vm/ᴨ = VmIm/ ᴨ2
We know Vm = Im RL. Therefore, power = (Im2/ ᴨ2)RL.
88. Ripple factor of half wave rectifier is _________
a) 1.414
b) 1.21
c) 1.3
d) 0.48
View Answer
Answer: b
Explanation: Ripple factor of a rectifier is the measure of the effectiveness of a power supply
filter
in reducing the ripple voltage. It is calculated by taking ratio of RMS AC component of
output voltage to DC component of output voltage.
r = √Irms2 – IDC2/IDC
For a half wave rectifier, it is 1.21.
89. If input frequency is 50Hz then ripple frequency of half wave rectifier will be equal to
__________
a) 100Hz
b) 50Hz
c) 25Hz
d) 500Hz
View Answer
Answer: b
Explanation: The ripple frequency of output and input is the same since one half cycle of
input is passed and other half cycle is blocked. So effectively frequency is the same.
90. Transformer utilization factor of a half wave rectifier is equal to __________
a) 0.267
b) 0.287
c) 0.297
d) 0.256
View Answer
Answer: b
Explanation: Transformer utilization factor is the ratio of DC output power to the AC rating
of the secondary winding. AC rating is the product of RMS voltage across winding and RMS
current through the winding, expressed in volt-amp. This factor indicates the effectiveness of
transformer usage by a rectifier. For half wave rectifier it is low and equal to 0.287.
91. If peak voltage on a half wave rectifier circuit is 5V and diode cut-in voltage is 0.7, then
peak inverse voltage on diode will be __________
a) 3.6V
b) 4.3V
c) 5V
d) 5.7V
View Answer
Answer: c
Explanation: PIV is the maximum reverse bias voltage that can be appeared across a diode in
the circuit. If PIV rating of the diode is less than this value breakdown of diode may occur.
For a half wave rectifier, PIV of diode is Vm. Therefore, PIV is 5V.
92. Efficiency of half wave rectifier is __________
a) 50%
b) 81.2%
c) 40.6%
d) 45.3%
View Answer
Answer: c
Explanation: Efficiency of a rectifier is a measure of the ability of a rectifier to convert input
power into DC power. Mathematically it is equal to the ratio of DC output power to the total
input power and efficiency = 40.6xRL/RF+RL%. Its maximum value is 40.6 %.
93. In a half wave rectifier, the input sine wave is 200sin100 ᴨt Volts. The average output
voltage is __________
a) 57.456V
b) 60.548V
c) 75.235V
d) 63.661V
View Answer
Answer: d
Explanation: The equation of sine wave is in the form Em sin wt.
Therefore, Em=200
Hence output voltage is Em/ᴨ. That is 200/ᴨ = 63.6619V.
94. In a half wave rectifier, the input sine wave is 200sin200 ᴨt Volts. If load resistance is of
1k then the average DC power output of half wave rectifier is __________
a) 3.25W
b) 4.05W
c) 5.02W
d) 6.25W
View Answer
Answer: b
Explanation: The equation of sine wave is in the form Em sin wt.
On comparing Em = 200
Power = Em2/ ᴨ2RL = 200/ ᴨ2x 1000.
95. In a half wave rectifier, the input sine wave is 250sin100 ᴨt Volts. The output ripple
frequency of rectifier will be __________
a) 100Hz
b) 200Hz
c) 50Hz
d) 25Hz
View Answer
Answer: c
Explanation: The equation of sine wave is in the form Em sin wt.
On comparing equation w = 100 ᴨ rad/s
We know w=2 ᴨ x frequency.
Therefore, frequency = 50 Hz.
Ripple frequency and input frequency are the same.
96. DC average current of a center taped full wave rectifier is _______________
(Where Im is the maximum peak current of input)
a) 2Im/ᴨ
b) Im/ᴨ
c) Im/2ᴨ
d) 1.414Im/ᴨ
View Answer
Answer: a
Explanation: Average DC current is the average current in the output of the rectifier. For a
center tapped full wave rectifier, if a sinusoidal input is given, then output will contain only
one half cycle repeatedly. So average current will be twice as half wave rectifier.
97. DC power output of center tapped full wave rectifier is equal to ___________
(Im is the peak current and RL is the load resistance)
a) (2Im2/ᴨ2)RL
b) (Im2/2 ᴨ2)RL
c) (Im2/ᴨ2)RL
d) (4Im2/ᴨ2)RL
View Answer
Answer: d
Explanation: DC output power is the power output of the rectifier. It is equal to V DCIDC.
We know VDC for a center taped rectifier is 2Vm/ᴨ and IDC for a center tap rectifier is 2Im/ᴨ.
We also know VDC = IDC/RL.
Hence output power is (4Im2/ ᴨ2)RL.
98. Ripple factor of center tapped full wave rectifier is _____________
a) 1.414
b) 1.21
c) 1.3
d) 0.48
View Answer
Answer: d
Explanation: Ripple factor of a rectifier is the measure of the effectiveness of a power supply
filter in reducing the ripple voltage. It is calculated by taking a ratio of RMS AC voltage to
DC output voltage. For a center tapped full wave rectifier, it is 0.482.
99. If input frequency is 50Hz then ripple frequency of center tapped full wave rectifier will
be equal to _____________
a) 100Hz
b) 50Hz
c) 25Hz
d) 500Hz
View Answer
Answer: a
Explanation: Since in the output of center tapped rectifier one half cycle is repeated hence
frequency will twice as that of input frequency. That is 100Hz.
100. Transformer utilization factor of a center tapped full wave rectifier is equal to
___________
a) 0.623
b) 0.678
c) 0.693
d) 0.625
View Answer
Answer: c
Explanation: Transformer utilization factor is the ratio of DC power supplied to the AC rating
of the primary winding. The factor indicated effectiveness of transformer usage by the
rectifier. For a center tapped full wave rectifier, it is equal to 0.81 w.r.t the primary winding,
0.57 w.r.t the secondary winding (double of that of a half wave rectifier) and the average
value is 0.69.
101. If peak voltage on a center tapped full wave rectifier circuit is 5V and diode cut-in
voltage is 0.7, then peak inverse voltage on diode will be ___________
a) 4.3 V
b) 10 V
c) 5.7 V
d) 9.3 V
View Answer
Answer: b
Explanation: PIV is the maximum reveres bias voltage that can be appeared across a diode in
the circuit. If PIV rating of the diode is less than this value breakdown of diode may occur.
For a center tapped full wave rectifier, PIV of diode is 2Vm. Therefore, PIV is 10 V.
102. Efficiency of center tapped full wave rectifier is ___________
a) 50%
b) 81.2%
c) 40.6%
d) 45.3%
View Answer
Answer: b
Explanation: Efficiency of a rectifier is the effectiveness of rectifier to convert AC to DC. It
is obtained by taking a ratio of DC power output to maximum input power delivered to load.
It is usually expressed in percentage. For center tapped full wave rectifier, it is 81.2%.
103. In a center tapped full wave rectifier, the input sine wave is 20sin500 ᴨt. The average
output voltage is __________
a) 12.73V
b) 6.93V
c) 11.62V
d) 3.23V
View Answer
Answer: a
Explanation: The equation of sine wave is in the form Em sin wt.
Therefore, Em=20
Hence output voltage is 2Em/ ᴨ. That is 40/ ᴨ.
104. In a center tapped full wave rectifier, the input sine wave is 200sin50 ᴨt. If load
resistance is of 1k then average DC power output of half wave rectifier is __________
a) 12.56W
b) 16.20W
c) 4.02W
d) 8.04W
View Answer
Answer: b
Explanation: The equation of sine wave is in the form Em sin wt.
On comparing Em = 200
Power = 4Em2/ ᴨ2RL = 800/ ᴨ2x 1000 = 16.20W.
105. In a center tapped full wave rectifier, the input sine wave is 250sin100 ᴨt. The output
ripple frequency of rectifier will be __________
a) 50Hz
b) 200Hz
c) 100Hz
d) 25Hz
View Answer
Answer: c
Explanation: The equation of sine wave is in the form Em sin wt.
Therefore, w = 100ᴨ that is, frequency f = w/2ᴨ = 50Hz
Since the output of center tapped full wave rectifier have double the frequency of input,
output frequency is 100Hz.
106. DC average current of a bridge full wave rectifier is _________
(Where Im is the maximum peak current of input)
a) 2Im/ᴨ
b) Im/ᴨ
c) Im/2ᴨ
d) 1.414Im/ᴨ
View Answer
Answer: a
Explanation: Average DC current is the average current in the output of rectifier. For a bridge
full wave rectifier, if a sinusoidal input is given output will contain only one half cycle
repeatedly. So average current will be twice as half wave rectifier.
107. DC power output of bridge full wave rectifier is equal to _________
(Im is the peak current and RL is the load resistance)
a) (2Im2/ ᴨ2)RL
b) (4Im2/ ᴨ2)RL
c) (Im2/ ᴨ2)RL
d) (Im2/2 ᴨ2)RL
View Answer
Answer: b
Explanation: DC output power is the power output of the rectifier. It is equal to V DCxIDC.
We know VDC for a bridge rectifier is 2Vm/ᴨ and IDC for a bridge rectifier is 2Im/ᴨ. We also
know VDC = IDC/RL.
Hence output power is IDC2RL = (4Im2/ᴨ2)RL.
108. Ripple factor of bridge full wave rectifier is _________
a) 1.414
b) 1.212
c) 0.482
d) 1.321
View Answer
Answer: c
Explanation: Ripple factor of a rectifier measures the ripples or AC content in the output. It is
obtained by dividing AC rms output with DC output. For full wave bridge rectifier it is 0.482.
109. If input frequency is 50Hz then ripple frequency of bridge full wave rectifier will be
equal to _________
a) 200Hz
b) 50Hz
c) 45Hz
d) 100Hz
View Answer
Answer: d
Explanation: Since in the output of bridge rectifier one half cycle is repeated hence frequency
will twice as that of input frequency. That is 100Hz.
110. Transformer utilization factor of a bridge full wave rectifier is equal to _________
a) 0.62
b) 0.69
c) 0.81
d) 0.43
View Answer
Answer: c
Explanation: Transformer utilization factor is the ratio of AC power delivered to load to the
DC power rating. This factor indicates effectiveness of transformer usage by rectifier. For
bridge full wave rectifier it is equal to 0.81.
111. If peak voltage on a bridge full wave rectifier circuit is 5V and diode cut-in voltage is
0.7, then peak inverse voltage on diode will be _________
a) 4.3V
b) 5.7V
c) 10V
d) 5V
View Answer
Answer: d
Explanation: PIV is the maximum reveres bias voltage that can be appeared across a diode in
the circuit. If PIV rating of the diode is less than this Value breakdown of diode may occur.
Therefore, PIV rating of diode should be greater than PIV in the circuit. For bridge rectifier
PIV is 5V.
112. Efficiency of bridge full wave rectifier is _________
a) 81.2%
b) 50%
c) 40.6%
d) 45.3%
View Answer
Answer: a
Explanation: It is obtained by taking ratio of DC power output to maximum AC power
delivered to load. Efficiency of a rectifier is the effectiveness of rectifier to convert input
power to DC. It is usually expressed in percentage. For bridge full wave rectifier, it is 81.2%.
113. In an bridge full wave rectifier, the input sine wave is 40sin100 ᴨt. The average output
voltage is ________
a) 22.73V
b) 16.93V
c) 25.47V
d) 33.23V
View Answer
Answer: c
Explanation: The equation of sine wave is in the form Em sin wt.
Therefore, Em=40
Hence output voltage is 2Em/ᴨ. That is 80/ᴨ.
114. Number of diodes used in a full wave bridge rectifier is ________
a) 1
b) 2
c) 4
d) 6
View Answer
Answer: c
Explanation: The model of bridge rectifier is same as a Wien bridge circuit. Like a Wien
bridge circuit needs 4 resistors, bridge rectifier needs 4 diodes while center tap configuration
requires only one.
115. In an bridge full wave rectifier, the input sine wave is 250sin100 ᴨt. The output ripple
frequency of rectifier will be ________
a) 50Hz
b) 200Hz
c) 100Hz
d) 25Hz
View Answer
Answer: c
Explanation: In a bridge full wave rectifier, the input sine wave is 250sin100 ᴨt Volts. The
output ripple frequency of rectifier will be 100Hz.
116. DC average current of a bridge full wave rectifier is _________
(Where Im is the maximum peak current of input)
a) 2Im/ᴨ
b) Im/ᴨ
c) Im/2ᴨ
d) 1.414Im/ᴨ
View Answer
Answer: a
Explanation: Average DC current is the average current in the output of rectifier. For a bridge
full wave rectifier, if a sinusoidal input is given output will contain only one half cycle
repeatedly. So average current will be twice as half wave rectifier.
117. DC power output of bridge full wave rectifier is equal to _________
(Im is the peak current and RL is the load resistance)
a) (2Im2/ ᴨ2)RL
b) (4Im2/ ᴨ2)RL
c) (Im2/ ᴨ2)RL
d) (Im2/2 ᴨ2)RL
View Answer
Answer: b
Explanation: DC output power is the power output of the rectifier. It is equal to V DCxIDC.
We know VDC for a bridge rectifier is 2Vm/ᴨ and IDC for a bridge rectifier is 2Im/ᴨ. We also
know VDC = IDC/RL.
Hence output power is IDC2RL = (4Im2/ᴨ2)RL.
118. Ripple factor of bridge full wave rectifier is _________
a) 1.414
b) 1.212
c) 0.482
d) 1.321
View Answer
Answer: c
Explanation: Ripple factor of a rectifier measures the ripples or AC content in the output. It is
obtained by dividing AC rms output with DC output. For full wave bridge rectifier it is 0.482.
119. If input frequency is 50Hz then ripple frequency of bridge full wave rectifier will be
equal to _________
a) 200Hz
b) 50Hz
c) 45Hz
d) 100Hz
View Answer
Answer: d
Explanation: Since in the output of bridge rectifier one half cycle is repeated hence frequency
will twice as that of input frequency. That is 100Hz.
120. Transformer utilization factor of a bridge full wave rectifier is equal to _________
a) 0.62
b) 0.69
c) 0.81
d) 0.43
View Answer
Answer: c
Explanation: Transformer utilization factor is the ratio of AC power delivered to load to the
DC power rating. This factor indicates effectiveness of transformer usage by rectifier. For
bridge full wave rectifier it is equal to 0.81.
121. If peak voltage on a bridge full wave rectifier circuit is 5V and diode cut-in voltage is
0.7, then peak inverse voltage on diode will be _________
a) 4.3V
b) 5.7V
c) 10V
d) 5V
View Answer
Answer: d
Explanation: PIV is the maximum reveres bias voltage that can be appeared across a diode in
the circuit. If PIV rating of the diode is less than this Value breakdown of diode may occur.
Therefore, PIV rating of diode should be greater than PIV in the circuit. For bridge rectifier
PIV is 5V.
122. Efficiency of bridge full wave rectifier is _________
a) 81.2%
b) 50%
c) 40.6%
d) 45.3%
View Answer
Answer: a
Explanation: It is obtained by taking ratio of DC power output to maximum AC power
delivered to load. Efficiency of a rectifier is the effectiveness of rectifier to convert input
power to DC. It is usually expressed in percentage. For bridge full wave rectifier, it is 81.2%.
123. In an bridge full wave rectifier, the input sine wave is 40sin100 ᴨt. The average output
voltage is ________
a) 22.73V
b) 16.93V
c) 25.47V
d) 33.23V
View Answer
Answer: c
Explanation: The equation of sine wave is in the form Em sin wt.
Therefore, Em=40
Hence output voltage is 2Em/ᴨ. That is 80/ᴨ.
124. Number of diodes used in a full wave bridge rectifier is ________
a) 1
b) 2
c) 4
d) 6
View Answer
Answer: c
Explanation: The model of bridge rectifier is same as a Wien bridge circuit. Like a Wien
bridge circuit needs 4 resistors, bridge rectifier needs 4 diodes while center tap configuration
requires only one.
125. In a bridge full wave rectifier, the input sine wave is 250sin100 ᴨt. The output ripple
frequency of rectifier will be ________
a) 50Hz
b) 200Hz
c) 100Hz
d) 25Hz
View Answer
Answer: c
Explanation: In a bridge full wave rectifier, the input sine wave is 250sin100 ᴨt Volts. The
output ripple frequency of rectifier will be 100Hz.
1. Zener diodes are also known as
a) Voltage regulators
b) Forward bias diode
c) Breakdown diode
d) None of the mentioned
View Answer
Answer: c
Explanation: Zener diodes are used as voltage regulators but they aren’t called voltage
regulators. They are called breakdown diodes since they operate in breakdown region.
2. Which of the following is true about the resistance of a Zener diode?
a) It has an incremental resistance
b) It has dynamic resistance
c) The value of the resistance is the inverse of the slope of the i-v characteristics of the Zener
diode
d) All of the mentioned
View Answer
Answer: d
Explanation: All of the statements are true for the resistance of the zener diode.
3. Which of the following is true about the temperature coefficient or TC of the Zener diode?
a) For Zener voltage less than 5V, TC is negative
b) For Zener voltage around 5V, TC can be made zero
c) For higher values of Zener voltage, TC is positive
d) All of the mentioned
View Answer
Answer: d
Explanation: All of the mentioned are true for the TC of a zener diode.
4. Which of the following can be used in series with a Zener diode so that combination has
almost zero temperature coefficient?
a) Diode
b) Resistor
c) Transistor
d) MOSFET
View Answer
Answer: a
Explanation: If a Zener diode of TC of about -2mV is connected with a forward diode (which
has a TC of about +2mV) in series, the combination can be used to obtain a very low (close
to zero) TC.
5. In Zener diode, for currents greater than the knee current, the v-i curve is almost
a) Almost a straight line parallel to y-axis
b) Almost a straight line parallel to x-axis
c) Equally inclined to both the axes with a positive slope
d) Equally inclined to both the axes with a negative slope
View Answer
Answer: b
Explanation: Note that the curve is v-I curve and not an i-v curve.
6. Zener diodes can be effectively used in voltage regulator. However, they are these days
being replaced by more efficient
a) Operational Amplifier
b) MOSFET
c) Integrated Circuits
d) None of the mentioned
View Answer
Answer: c
Explanation: ICs have been widely adapted by the industries over conventional zener diodes
as their better replacements for a voltage regulators.
7. A 9.1-V zener diode exhibits its nominal voltage at a test current of 28 mA. At this current
the incremental resistance is specified as 5 Ω. Find VZ0 of the Zener model.
a) 8.96V
b) 9.03V
c) 9.17V
d) 9.24V
View Answer
Answer: b
Explanation: VZ = VZo + MZ IZT
9.1 = VZo + 5 * 28 * 10-3
VZo = 8.96v
VZ = VZo + 5IZ = 8.96 * 5IZ.
8. A shunt regulator utilizing a zener diode with an incremental resistance of 5 Ω is fed
through an 82-Ω resistor. If the raw supply changes by 1.0 V, what is the corresponding
change in the regulated output voltage?
a) 72.7 mV
b) 73.7 mV
c) 74.7 mV
d) 75.7 mV
View Answer
Answer: c

Explanation:
9. A designer requires a shunt regulator of approximately 20 V. Two kinds of Zener diodes
are available: 6.8-V devices with rz of 10 Ω and 5.1-V devices with rz of 30 Ω. For the two
major choices possible, find the load regulation. In this calculation neglect the effect of the
regulator resistance R.
a) -30mV/mA and 120mV/mA respectively
b) 30mV/mA and 60mV/mA respectively
c) -60mV/mA and +60mV/mA respectively
d) -30mV/mA and -120mV/mA respectively
View Answer
Answer: d
Explanation: Three 6.8v zeners provide 3*6.8 = 20.4v with 3 * 10 =30Ω Resistance,
neglecting R, we have
load Regulation = -30mV/mA.
For 5.1 Zeners we need 4 diodes to provide 20.4v with 4 * 30 =120Ω Resistance.
load Regulation = -120mV/mA .
10. Partial specifications of a Zener diode is provided. V Z = 10.0 V, VZK = 9.6 V, and IZT =
50 mA. Assuming that the power rating of a breakdown diode is established at about twice
the specified Zener current (IZT), what is the power rating of each of the diodes described
above?
a) 1.04 W
b) 0.104 W
c) 10.4 mW
d) 1.04 mW
View Answer
Answer: a

Explanation: