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Occupation Probability Example

The occupation probabilities of electrons and holes at specific energy levels E2 and E1 respectively were estimated based on the energy band diagram of a semiconductor. Using the Boltzmann approximation formula and neglecting terms with very small exponents, the occupation probability of electrons at E2 was calculated to be e-20 and of holes at E1 was calculated to be e-16.

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105 views

Occupation Probability Example

The occupation probabilities of electrons and holes at specific energy levels E2 and E1 respectively were estimated based on the energy band diagram of a semiconductor. Using the Boltzmann approximation formula and neglecting terms with very small exponents, the occupation probability of electrons at E2 was calculated to be e-20 and of holes at E1 was calculated to be e-16.

Uploaded by

nithin_v90
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Q: The energy band diagram of a particular semiconductor in quasi-equilibrium at room

temperature is shown in the following figure. Estimate the occupation probability of


electrons and holes at E2 and E1, respectively.

Ans: e-20, e -16


From the formula for the occupation probabilities of quasi-fermi levels,

1 1
f c ( E2)= f v ( E1 )=
( E2− Efc ) and ( E1 −Efv )
kT kT
e +1 e +1

As the energy differences are large, Boltzmann approximation can be used. Therefore,
occupation probability of electron at E2 is
1 1 1 1
f c ( E 2) = ( E −E ) = 0.5 = 20 ≈ 20 =e−20
2 fc
0.025 e +1 e
e kT +1 e +1
( E2−E fc )
where the 1 in the denominator has been neglected because e kT
=e 20 ≫ 1.

Similarly, the occupation probability of hole at E1 is


( E1−E fv ) −0.4
kT 0.025 −16
1 e e e
1−f c ( E2 )=1− ( E1− Efv )
= ( E1− Efv )
= −0.4
= −16
≈ e−16
0.025 e +1
e kT
+1 e kT
+1 e +1
( E1−E fv )
where e−16 in the denominator has been neglected because e kT
=e−16 ≪ 1.

Therefore, the correct answer is f c =e−20 and f v =e−16 .

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