FGH40N60SMD 600V, 40A Field Stop IGBT

November 2010

FGH40N60SMD
600V, 40A Field Stop IGBT
Features General Description
• Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series
• Positive Temperaure Co-efficient for easy parallel operating of Field Stop IGBTs offer the optimum performance for Solar
• High current capability Inverter, UPS, Welder and SMPS applications where low con-
duction and switching losses are essential.
• Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant

Applications
• Solar Inverter
• UPS, Welder, SMPS

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
Collector Current @ TC = 25oC 80 A
IC
Collector Current @ TC = 100oC 40 A
ICM (1) Pulsed Collector Current 120 A
Diode Forward Current @ TC = 25oC 40 A
IF
Diode Forward Current @ TC = 100oC 20 A
IFM (1) Pulsed Diode Maximum Forward Current 120 A
Maximum Power Dissipation @ TC = 25oC 349 W
PD
Maximum Power Dissipation @ TC = 100oC 174 W
o
TJ Operating Junction Temperature -55 to +175 C
Tstg Storage Temperature Range -55 to +175 oC

Maximum Lead Temp. for soldering oC

TL 300
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH40N60SMD Rev. A
 FGH40N60SMD 600V, 40A Field Stop IGBT
Thermal Characteristics
Symbol Parameter Typ. Max. Units
oC/W
R qJC(IGBT) Thermal Resistance, Junction to Case - 0.43
o
R qJC(Diode) Thermal Resistance, Junction to Case - 1.5 C/W
oC/W
R qJA Thermal Resistance, Junction to Ambient - 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FGH40N60SMD FGH40N60SMD TO-247 - - 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BV CES Collector to Emitter Breakdown Voltage V GE = 0V, IC = 250mA 600 - - V
DBVCES Temperature Coefficient of Breakdown
DTJ Voltage
V GE = 0V, IC = 250mA - 0.6 - V/oC

ICES Collector Cut-Off Current V CE = VCES, VGE = 0V - - 250 mA

IGES G-E Leakage Current V GE = VGES, VCE = 0V - - ±400 nA

On Characteristics
V GE(th) G-E Threshold Voltage IC = 250mA, V CE = VGE 3.5 4.5 6.0 V
IC = 40A, VGE = 15V - 1.9 2.5 V
V CE(sat) Collector to Emitter Saturation Voltage
IC = 40A, VGE = 15V,
- 2.1 - V
TC = 175oC

Dynamic Characteristics
C ies Input Capacitance - 1880 - pF
C oes Output Capacitance V CE = 30V, V GE = 0V, - 180 - pF
f = 1MHz
C res Reverse Transfer Capacitance - 50 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 12 16 ns
tr Rise Time - 20 28 ns
td(off) Turn-Off Delay Time V CC = 400V, IC = 40A, - 92 120 ns
tf Fall Time RG = 6W, VGE = 15V, - 13 17 ns
Inductive Load, TC = 25oC
E on Turn-On Switching Loss - 0.87 1.30 mJ
E off Turn-Off Switching Loss - 0.26 0.34 mJ
E ts Total Switching Loss - 1.13 1.64 mJ
td(on) Turn-On Delay Time - 15 - ns
tr Rise Time - 22 - ns
td(off) Turn-Off Delay Time V CC = 400V, IC = 40A, - 116 - ns
tf Fall Time RG = 6W, VGE = 15V, - 16 - ns
Inductive Load, TC = 175oC
E on Turn-On Switching Loss - 0.97 - mJ
E off Turn-Off Switching Loss - 0.60 - mJ
E ts Total Switching Loss - 1.57 - mJ

FGH40N60SMD Rev. A 2 www.fairchildsemi.com

 FGH40N60SMD 600V, 40A Field Stop IGBT
Electrical Characteristics of the IGBT (Continued)

Unit
Symbol Parameter Test Conditions Min. Typ. Max s
Qg Total Gate Charge - 119 180 nC
V CE = 400V, IC = 40A,
Qge Gate to Emitter Charge - 13 20 nC
V GE = 15V
Qgc Gate to Collector Charge - 58 90 nC

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Unit
Symbol Parameter Test Conditions Min. Typ. Max s
TC = 25oC - 2.3 2.8
V FM Diode Forward Voltage IF = 20A V
TC = 175oC - 1.67 -
E rec Reverse Recovery Energy TC = 175oC - 48.9 - uJ
TC = 25oC - 36 -
trr Diode Reverse Recovery Time IF =20A, dIF/dt = 200A/ms ns
TC = 175oC - 110 -
TC = 25oC - 46.8 -
Qrr Diode Reverse Recovery Charge nC
TC = 175oC - 445 -

FGH40N60SMD Rev. A 3 www.fairchildsemi.com

 FGH40N60SMD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

120 120
o 20V 12V o 20V 12V
TC = 25 C TC = 175 C
15V 15V 10V
100 10V 100
Collector Current, IC [A]

Collector Current, IC [A]

80 80

60 60

VGE = 8V VGE = 8V
40 40

20 20

0 0
0 2 4 6 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
120 120
Common Emitter
Common Emitter VCE = 20V
VGE = 15V
100 o
TC = 25 C
o
Collector Current, IC [A]

TC = 25 C 90 T = 175oC
Collector Current, IC [A]

o C
TC = 175 C
80

60 60

40
30
20

0 0
0 1 2 3 4 0 2 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.0
20
Common Emitter Common Emitter
Collector-Emitter Voltage, VCE [V]

VGE = 15V o
Collector-Emitter Voltage, VCE [V]

TC = -40 C
80A
2.5 16

12
2.0

40A 8

1.5 40A
80A
4
IC = 20A IC = 20A

1.0
25 50 75 100 125 150 175 0
o 4 8 12 16 20
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

FGH40N60SMD Rev. A 4 www.fairchildsemi.com

 FGH40N60SMD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o
Collector-Emitter Voltage, VCE [V]

TC = 25 C o
TC = 175 C

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

40A
80A 80A
4 4
40A
IC = 20A

IC = 20A
0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

4000 15
Common Emitter
Common Emitter o
VGE = 0V, f = 1MHz TC = 25 C
400V
Gate-Emitter Voltage, VGE [V]

TC = 25 C
o 12
3000 VCC = 200V
Capacitance [pF]

300V
9
Cies
2000
6

1000 Coes
3

Cres

0 0
0.1 1 10 30 0 40 80 120
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance
300 100
10ms
100
tr
100ms
1ms
Collector Current, Ic [A]

10 ms
Switching Time [ns]

10
DC td(on)
10
1
Common Emitter
VCC = 400V, VGE = 15V
*Notes: IC = 40A
0.1 o
1. TC = 25 C o
TC = 25 C
o
2. TJ = 175 C o
TC = 175 C
3. Single Pulse
0.01 1
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [W]

FGH40N60SMD Rev. A 5 www.fairchildsemi.com

 FGH40N60SMD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
1000 1000
Common Emitter
VGE = 15V, RG = 6W
td(off) o
TC = 25 C
o
TC = 175 C

Switching Time [ns]

Switching Time [ns]

100 100 tr

tf

10 Common Emitter 10 td(on)

VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
o
TC = 175 C
1 1
0 10 20 30 40 50 20 30 40 50 60 70 80
Gate Resistance, RG [W] Collector Current, IC [A]

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
1000 5

td(off)
Switching Time [ns]

100
Switching Loss [mJ]

Eon
1

tf
Eoff
Common Emitter
10 Common Emitter VCC = 400V, VGE = 15V
VGE = 15V, RG = 6W IC = 40A
o o
TC = 25 C TC = 25 C
o o
TC = 175 C TC = 175 C
1 0.1
20 30 40 50 60 70 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [W]

Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
6 200

100
Collector Current, IC [A]
Switching Loss [mJ]

Eon
1

10
Eoff
Common Emitter
VGE = 15V, RG = 6W
o
TC = 25 C Safe Operating Area
o o
TC = 175 C VGE = 15V, TC = 175 C
0.1 1
20 30 40 50 60 70 80 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]

FGH40N60SMD Rev. A 6 www.fairchildsemi.com

 FGH40N60SMD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Current Derating Figure 20. Load Current Vs. Frequency
90 120
Common Emitter Square Wave
80 VGE = 15V 110 o
TJ < 175 C, D = 0.5, VCE = 400V
100
70 VGE = 15/0V, RG = 6W
Collector Current, IC [A]

90

Collector Current, IC [A]

60 80
50 70 Tc = 75 C
o

60
40 o
50 Tc = 100 C
30 40
20 30
20
10
10
0 0
25 50 75 100 125 150 175 1k 10k 100k 1M
o
Collector-EmitterCase Temperature, TC [ C] Switching Frequency, f [Hz]

Figure 21. Forward Characteristics Figure 22. Reverse Current

100 1000

100 TC = 175 C
o
Reverse Currnet, ICES [m A]
Forward Current, IF [A]

10
o
TC = 175 C
o
TC = 100 C
10 1
o
TC = 25 C
0.1

0.01 TC = 25 C
o
o
TC = 25 C
o
TC = 175 C
1 1E-3
0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600
Forward Voltage, VF [V] VR [V]

Figure 23. Stored Charge Figure 24. Reverse Recovery Time

700 200
o o
TC = 25 C TC = 25 C
Stored Recovery Charge, Qrr [nC]

600
Reverse Recovery Time, trr [ns]

o o
TC = 175 C TC = 175 C
150
500

400
100
300 di/dt = 100A/ms

di/dt = 100A/ms
200 di/dt = 200A/ms di/dt = 200A/ms
50

100

0 0
0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45
Forwad Current, IF [A] Forward Current, IF [A]

FGH40N60SMD Rev. A 7 www.fairchildsemi.com

 FGH40N60SMD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 25.Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5

0.1 0.2
0.1
0.05
0.02
0.01 single pulse PDM
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
-5 -4 -3 -2 -1 0
10 10 10 10 10 10
Rectangular Pulse Duration [sec]

Figure 26.Transient Thermal Impedance of Diode

3
Thermal Response [Zthjc]

1 0.5

0.2

0.1

0.1 0.05 PDM

0.02 t1
0.01 t2
Duty Factor, D = t1/t2
single pulse
Peak Tj = Pdm x Zthjc + TC

0.01 -5 -4 -3 -2 -1 0
10 10 10 10 10 10
Rectangular Pulse Duration [sec]

FGH40N60SMD Rev. A 8 www.fairchildsemi.com

 FGH40N60SMD 600V, 40A Field Stop IGBT
Mechanical Dimensions

TO - 247AB (FKS PKG CODE 001)

FGH40N60SMD Rev. A 9 www.fairchildsemi.com

 FGH40N60SMD 600V, 40A Field Stop IGBT
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Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

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Rev. I51

10
FGH40N60SMD Rev. A www.fairchildsemi.com