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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The 2SD5702 is a silicon NPN power transistor in a TO-3P(H)IS package. It is designed for high voltage, high speed applications such as color display horizontal deflection output. It has a built-in damper diode and can handle currents up to 6A continuously and 16A peak with a power dissipation of 60W at a case temperature of 25°C. Key electrical characteristics include a saturation voltage below 5V at 4A collector current and a transition frequency of 3MHz.

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214 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The 2SD5702 is a silicon NPN power transistor in a TO-3P(H)IS package. It is designed for high voltage, high speed applications such as color display horizontal deflection output. It has a built-in damper diode and can handle currents up to 6A continuously and 16A peak with a power dissipation of 60W at a case temperature of 25°C. Key electrical characteristics include a saturation voltage below 5V at 4A collector current and a transition frequency of 3MHz.

Uploaded by

Ssr Sha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5702

DESCRIPTION
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed

APPLICATIONS
·For color display horizontal deflection
output applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 6 A

ICM Collector current-peak 16 A

PC Collector power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5702

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 2.0 5.0 V

VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V

ICBO Collector cut-off current VCB=800V; IE=0 10 µA

IEBO Emitter cut-off current VEB=4V; IC=0 40 200 mA

hFE-1 DC current gain IC=1A ; VCE=5V 10 30

hFE-2 DC current gain IC=3A ; VCE=5V 5 15

fT Transition frequency IC=1A ; VCE=10V 3 MHz

VF Diode forward voltage IF=6A 2.0 V

IC=4A ;IB1=0.8A;IB2=-1.6A
tf Fall time 0.4 µs
VCC=200V; RL=50@

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5702

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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