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NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier

The NTE261 and NTE262 are complementary silicon Darlington transistors designed for power amplification and low-speed switching. They have high current gain, can withstand collector-emitter voltages up to 100V, and have low saturation voltages between 2-4V depending on the current. They are housed in a TO-220 package and can handle continuous collector currents up to 5A and peak currents up to 8A with appropriate cooling.

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79 views2 pages

NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier

The NTE261 and NTE262 are complementary silicon Darlington transistors designed for power amplification and low-speed switching. They have high current gain, can withstand collector-emitter voltages up to 100V, and have low saturation voltages between 2-4V depending on the current. They are housed in a TO-220 package and can handle continuous collector currents up to 5A and peak currents up to 8A with appropriate cooling.

Uploaded by

criman45
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NTE261 (NPN) & NTE262 (PNP)

Silicon Complementary Transistors


Darlington Power Amplifier

Description:
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.

Features:
D High DC Current Gain: hFE = 2500 Typ @ IC = 4A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 3A
= 4V Max @ IC = 5A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor

Absolute Maximum Ratings:


Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/°C
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C
Unclamped Inductive Load Energy (Note 1), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mJ
Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Note 1. IC = 1A, L = 100mH, P.R.F. = 10Hz, VCC = 20V, RBE = 100Ω.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 2 100 – – V
Collector Cutoff Current ICEO VCE = 50V, IB = 0 – – 0.5 mA
ICBO VCB = 100V, IE = 0 – – 0.2 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 2.0 mA
ON Characteristics (Note 2)
DC Current Gain hFE IC = 0.5A, VCE = 3V 1000 – –
IC = 3A, VCE = 3V 1000 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 12mA – – 2.0 V
IC = 5A, IB = 20mA – – 4.0 V
Base–Emitter ON Voltage VBE(on) IC = 3A, VCE = 3V – – 2.5 V
Dynamic Characteristics
Small–Signal Current Gain |hfe| IC = 3A, VCE = 4V, f = 1MHz 4.0 – –
Output Capacitance Cob
NTE261 VCB = 10V, IE = 0, f = 0.1MHz – – 300 pF
NTE262 – – 200 pF

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

NTE261

.420 (10.67)
Max
C
B .110 (2.79)

.147 (3.75) .500


E Dia Max (12.7)
Min

.250 (6.35)
Max
NTE262
.500
(12.7)
Max
C .070 (1.78) Max

B
Base Emitter

.100 (2.54) Collector/Tab

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