Lecture 27

Amplifier Configurations

Reading:
CE/CS: Jaeger 13.6, 13.9, 13.10, 13.11
CC/CD: Jaeger 14.1, 14.3
CB/CG: Jaeger 14
14.1,
1 14
14.4
4
and Notes

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Amplifier Configurations

Voltage Amplifier: Voltage input and Voltage output

Ampliffier Output

Resistance
Ampliifier Input
Sourrce Input

Ressistance
Ressistance

Ressistance

Load R
Source Amplifier Load
•Any signal source has a finite “source resistance”, RS .
•The amplifier is often asked to drive current into a load of finite
impedance, RL (examples: 8 ohm speaker, 50 ohm transmission line, etc…)

The controlled source is a Voltage-controlled-Voltage Source

Av=Open
O Ci
Circuit
i Voltage
Vl Gain
G i can be
b found
f d by
b applying
l i a
voltage source with Rs=0, and measuring the open circuit output
voltage(no load or RL=infinity)
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Amplifier Configurations

Why is the input and output resistance important?

•Only the voltage vin is amplified to Avvin.

•Since Rs and Rin form a voltage divider that determines vin, you want Rin as
large as possible (for a voltage amplifier) for maximum voltage gain.
•Since RL and Rout form a voltage divider that determines vout, you want Rout
as small as possible (for a voltage amplifier) for maximum voltage gain.

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Amplifier Configurations

Current Amplifier: Current input and Current output

The controlled source is a Current

Current-controlled-Current
controlled Current Source
Ai=Short Circuit Current Gain can be found by applying a current
source with Rs= infinity, and measuring the short circuit output
current (No Load or RL=0)0)
•Only the current iin is amplified to Aiiin.
•Since Rs and Rin form a current divider that determines iin, you want Rin as small as
possible
ibl (for
(f a currentt amplifier)
lifi ) for
f maximum i currentt gain.
i
•Since RL and Rout form a current divider that determines iout, you want Rout as large
as possible (for a current amplifier) for maximum current gain.
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Amplifier Configurations

Transconductance Amplifier: Voltage input and Current output

The controlled source is a Voltage-controlled-Current Source

Gm=Transconductance Gain can be found by applying a voltage
source with Rs=0, and measuring the short circuit output current
(No Load or RL=0)
0)
•Only the voltage vin is amplified to iout=Gmvin.
•Since Rs and Rin form a voltage divider that determines vin, you want Rin as large as
possible for maximum transconductance gain.gain
•Since RL and Rout form a current divider that determines iout, you want Rout as large
as possible for maximum transconductance gain.
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Amplifier Configurations

Transresistance Amplifier: Current input and Voltage output

The controlled source is a Current-controlled-Voltage Source

Rm=Transresistance Gain can be found by applying a current
source with Rs=infinity, and measuring the open circuit output
voltage (RL=infinity)
infinity)
•Only the current iin is amplified to vout=Rmiin
•Since Rs and Rin form a current divider that determines iin, you want Rin as small as
ppossible for maximum transresistance gain.
g
•Since RL and Rout form a voltage divider that determines vout, you want Rout as small
as possible for maximum transresistance gain.
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Amplifier Configurations

Input Resistance
With the load resistance attached…
Apply
l a test input
i voltage
l andd measure the
h input
i current, Rin=vt/it
Or
Apply a test input current and measure the input voltage,
voltage Rin= vt/it

Output Resistance
With all input voltage sources shorted and all input current sources opened…
Apply a test voltage to the output and measure the output current, Rout=vt/it
Or
Apply a test current to the output and measure the output voltage, Rout= vt/it

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Final Summary of Transistor Amplifier Analysis
1.) a.) Determine DC operating point. Make sure the transistors are biased into
active mode ((forward active for BJTs and Saturation for MOSFET. Do not
confuse the two terms as saturation means a completely different thing for a
BJT)and b.) calculate small signal parameters gm, r, ro etc…
2.) Convert to the AC only model.
•DC Voltage sources are replaced with shorts to ground
•DC Current sources are replaced with open circuits
•Large capacitors are replaced with short circuits
•Large
Large inductors are replaced with open circuits
3.) Use a Thevenin circuit where necessary on each leg of transistor
4.) Replace transistor with small signal model
5.) Simplify the circuit as much as necessary and solve for gain.
6.) Solve for Input Resistance: With the load resistance attached… a.) Apply a test input
voltage and measure the input current, Rin=vt/it or b.) Apply a test input current and
measure the input voltage
voltage, Rin= vt/it
7.) Solve for Output Resistance: With all input voltage sources shorted and all input
current sources opened… a.) Apply a test voltage to the output and measure the output
current Rout=vt/it or bb.)) Apply a test current to the output and measure the output
current,
voltage, Rout= vt/it

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Emitter and Common Source

Resistance

Resistance
nce

nce
Input R

Input R
Outputt

Outputt
Resistan

Resistan
Can be modeled as a current amplifier, Modeled as transconductance
IC=IB, or a transconductance amplifier , amplifier, iDS=KvGS
iC=KvBE
Overall
O ll Amplifier
A lifi Configuration
C fi ti
•Emitter/Source is neither an input nor an output
•Input is between base-emitter or gate-source
•Output
O t t is i between
b t collector-emitter
ll t itt andd drain-source
d i
•Is a transconductance amplifier (see small signal models we have
used in previous examples)
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Emitter and Common Source
Portion due to Portion due Portion due to Portion due to
bias circuitry to transistor transistor bias circuitry

r gmv r Rc

Rin

Rout
or gmvgs

r is replaced with an open

circuit for the MOSFET case
Previously, we have analyzed voltage gain. Now let us look at the
amplifier input and output resistance (these are small signal
parameters):
Rin  R 2 || R1 || r for the BJT or Rin  R 2 || R1 for the MOSFET

Rout  ro || Rc for the BJT or MOSFET

Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Summary of Common Emitter and Common Source Characteristics

•Very
Very Large Voltage Gain These properties
make the CE/CS
•Inverting Voltage Gain (due to –gmro) configuration very
•High Input Impedance good for high gain
stages of amplifiers.
•High Output Impedance

Now let us consider the other two configurations of

transistor amplifiers:
•Common Gate/Common Base
•Common
C D
Drain/Common
i /C Collector
C ll t

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Collector and Common Drain
DC Circuit
Ci it

C D

B G

E S

Collector (or Drain) is neither an input or output

Input is Base (or Gate)
p is Emitter ((or Source))
Output

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Collector
DC Ci
Circuit
it converted
t d to
t AC Equivalent
E i l t (reduced)
( d d)

DC
Circuit

Note the extra

ground due to C2

ib B C
AC ib ro
r
Circuit
E

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Collector
DC Ci
Circuit
it converted
t d to
t AC Equivalent
E i l t (reduced)
( d d)
ib B C
AC ib
 ro
r
Circuit
E

ib B C
AC Circuit ib
r
(reduced)
E 
i
b

vo

vo   o  1ib R 4 || ro || R 7 
vth  ib Rth  r   o  1R 4 || ro || R7 
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Collector
AC V
Voltage
lt G
Gain
i
vo   o  1ib R 4 || ro || R 7 
vth  ib Rth  r   o  1R 4 || ro || R 7 
R 2 || R1
vthh  vs
R 2 || R1  Rs

Av 
vo vth  R 2 || R1 
  
 o  1ib R 4 || ro || R7  

vth vs  R 2 || R1  Rs  ib Rth  r   o  1R 4 || ro || R 7  
 R 2 || R1 
Av   
 o  1RL 
h R L  R 4 || ro || R 7 
 where
 R 2 || R1  Rs  Rth  r   o  1RL  
gm
multiplying numerator and denominator by
 o  1
 
 
 R 2 || R1   g m RL 
Av    
 R 2 || R1  Rs    Rth  g m r  
 
  g m    1  RL     1  
   o  o 
 
 
 R 2 || R1  g m RL 
Av    
 R 2 || R1  Rs    Rth  

  g m    1  RL    o  
 
  o  
But for R2 || R1  Rs and g m R L  1

Av 
g m RL
1  g m RL
1 V
V
  Gain is positive and ~1
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Drain Conversion from DC to AC Equivalent Circuit

DC
Ci i
Circuit

G D
AC gmvGS ro R7
Circuit
S

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Emitter and Common Source
DC Ci
Circuit
it converted
t d to
t AC Equivalent
E i l t (reduced)
( d d)
G D
AC gmvGS ro
Circuit R7

G D
AC Circuit
(reduced)

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Drain AC Voltage Gain

vo  g m vGS R 4 || ro || R7 
vth  vGS  g m vGS R 4 || ro || R7   vGS 1  g m R 4 || ro || R7 
R 2 || R1
vth  v s
R 2 || R1  Rs
vo vGS vth  R 2 || R1  g m R 4 || ro || R7  
Av     
vGS vth v s  R 2 || R1  Rs  1  g m R 4 || ro || R7  
 R 2 || R1  g m RL 
Av    h R L  R 4 || ro || R7 
 where
 R 2 || R1  Rs  1  g m RL  

But for R2 || R1  Rs and g m R L  1

Av 
g m RL
1  g m RL
1 V
V
  Gain is positive and ~1

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Collector/Drain Input Resistance

Input Resistance: With the load resistance attached apply a test input
voltage and measure the input current, Rin=vx/i (where i=ix)
vx
Rin , BJT   r   o  1R L
i
Resistance in the emitter circuit is “multiplied”
by transistor to increase the input resistance
vx vx
Rin , MOSFET   
i 0
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Collector Output Resistance

ix
RL

Output Resistance: With all input voltage sources shorted and all input
current sources opened, apply a test voltage to the output and measure the
output current, Rout=vx/ix
vx vx v vx  vx  vx
ix  i   oi     oi  x    o    
RL r  Rth ro r  Rth  r  Rth  RL
v 1
Rout , BJT  x  where RL  ro || R 4
ix 1 1

r  Rth RL
 o  1
Two resistors in parallel: RL, and Resistance in the base circuit is “multiplied” by
transistor to decrease the output resistance
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Drain Output Resistance

gmvGS

ix
RL

Output Resistance: With all input voltage sources shorted and all input
current sources opened,
opened apply a test voltage to the output and measure the
output current, Rout=vx/i
vx v
i x   g m vGS   gmvx  x
ro RL
vx 1
Rout ,MOSFET   where RL  ro || R 4
ix 1
gm 
RL

Two resistors in parallel: RL and inverse transconductance

Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations

Summary of Common Collector and Common Drain Characteristics

These properties
Th ti makek th
the
•Unity Voltage Gain CC/CD configuration very
good for impedance
•Non-Inverting
Non Inverting Voltage Gain transformation I.E.
transformation, IE
“buffering” high
•Very High Input Impedance impedances to low
impedances.
peda ces. CC/C
CC/CD
•Low
L Output
O t t Impedance
I d configurations are good
for output stages of
amplifiers due to their
very low output
impedance, I.E., very little
voltage drop in the output
resistance of the amp.

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Collector/Drain Current Gain
ith

Rth

vth
i (o+1)ith

i
Ai , BJT   o 1
ith
i
Ai , MOSFET  
ith
Note: since R7 was originally defined as the load, the current gain should actually be (+1) (R4||ro)/(R4||ro+R7)
using a current divider.
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Base and Common Gate
DC Circuit
Ci it

Base (or Gate) is neither an input or output

Input is Emitter (or Source)
p is Collector (or
Output ( Drain))

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Base
DC Ci
Circuit
it converted
t d to
t AC Equivalent
E i l t (reduced)
( d d)

DC
Circuit

Note: Jaeger let’s ro go to infinity which

makes the math dramatically easier
AC B C
Circuit ro
r gmv
vo
E

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Base AC Equivalent (reduced)
B C
v
ro
AC r gmv
vo
Circuit E

v
AC r gmv ro gmv ro
Circuit vo

( d d)
(reduced) r

v
R4
Vth  vs  0.8667Vs
R 4  Rs
Rth  Rs || R 4  1.73K
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Base Voltage Gain
iC
i vo
gmv ro

i E  iC  i B  g m v  i  i B iB
r
 v  vo   v  iE
i E  g m v       
 ro   r  v
vth  i E Rth  i B r
  v  vo   v  v 
 vth   g m v         Rth    r
 Vth  vs
R4
 0.8667Vs
  ro   r   r  R 4  Rs
also, Rth  Rs || R 4  1.73K
 1 
 gm  
  v  vo 
so, vo  v  R
ro
vo  iC RL   g m v      R L
  RL  L
  ro   1 
 ro 
   1   
   gm    
   ro R  
  v  v  
   RL  L
   1   

 vth   g m v    ro     v 
  Rth  v
 r
   
ro
 
   
   
   
 
   
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Base Voltage Gain

   1       1    
   gm        gm     
   ro R      ro R   
  v  v  RL  L      1
 R  L   
   1       1 L    

 vth   g m v    ro     v 
  Rth  v 

 vth  v  g m   
ro     1 
  Rth  1 Thus,
 r   r 
       
ro ro
    
        
        
        
  
        
 1 
 gm  
1  R4 
Av  o  th   R
v v v ro
 
  L
v vth v s
 1
RL

   1     R 4  Rs 
   gm     
 ro     ro    
  1 RL  
  RL  
   1    
 g    ro    1  
    Rth  1
 m   
   
ro r
  
    
    
   
 
    
for ro   and R 4  Rs
vo v vth g m RL
Av  
v vth v s   Rth  
 g m Rth     1
  r  

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Base Voltage Gain
g m RL
Av 
  Rth  
 g m Rth     1
    
r
g m RL
Av 
  1 

 th  m
R g    1
  r  
g m RL
Av 
  g m r 1 gm  

 th  m
R g    1
  g m r r g m  
g m RL
Av 
  gm  
 Rth  g m r  1  1
  g m r  
g m RL
Av   L arg e  o
  gm  
 Rth   0  1  1
  o   
g m RL
Av  Gain is positive and can be large
1  Rth g m
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Base Input Resistance
iC
i ro
gmv
r
vo
-ix=iE
iB
vx vvvx

Input Resistance: With the load resistance attached apply a test input
voltage
l andd measure the
h input
i current, Rin=vx/i
From before,
 1 
 gm  
 v  vo   v 
d , vo  v  R
ro
i E  g m v        and
 RL  L
 ro   r   1 
 ro 
i x  i E and v x  v
 1 
 gm  
 v  vo   vx 
and , vo  v x  R
ro
i x  g m v x   x    
 RL  L
 ro   r   1 
 ro 
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
  1   Common Base Input Resistance
  gm   
  ro R 
 v  v 
x x  RL  L
  1  
i x  g m v x    ro     v x 
 r 
   
ro

  Letting ro  
 
  vx 1
  Rin , BJT  
   1   ix 1 
   gm     g m   
   ro     r 
 1  R
RL  L  
   1  
  ro    1  r

ix  vx g m  

 
   r  Rin , BJT 
 
ro
    g m r  1
   
    r  o
    
    o 1 o
v 1
Rin , BJT  x  o 1
ix 

 
  gm   
1  

 
  
1
ro  
R  gm gm
   RL  L  
   1   
g    ro     1 

   r Input Resistance is very small!

m

  
ro
  
   
   
 
  
   
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Base Output Resistance
v

r gmv ro Replace RL by a voltage

source, vx

iC
iB

r oib vr ro
v ix vx
iE
Rth ve

Result follows exactly after discussion in Jaeger,

Jaeger pages 668-670,
668-670 and 683-684.
683-684

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Base Output Resistance

v x  v r  ve iC
iB
 i x   o ib ro  ve
r oib vr ro
but , vx
v ix
v e  i x r || Rth   i x
r Rth iE
r  Rth Rth ve
Rth
ib  i x thus,
r  Rth
 Rth  rR
v x  i x ro   o   i x ro  i x  th
 r  Rth  r  Rth
vx  Rth  rR
 Rout ,BJT   ro   o  ro   th
ix  r  Rth  r  Rth
Even Larrger
Very Larrge

Output Resistance is HUGE!

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations
Common Base Current Gain

il
Ai   o  1
ith
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Transistor Amplifier Configurations
Common Gate Solution

The Common Gate solution can be found by recognizing

that the following translations can be made in our small
signal model:      1 o o

r  

g m RL g m RL
Av , BJT   Av , MOSFET 
  Rth   g m Rth  1
 m th 
g R    1
    
r

1 1
Rin , BJT   Rin , MOSFET 
1  gm
g m   
 r 
 Rth  r R  Rth  r R
Rout , BJT  ro   o  ro   th  ro  g m r  ro   th  Rout , MOSFET  ro 1  g m Rth   Rth
 r  Rth  r  Rth  r  Rth  r  Rth

Ai , BJT   o  1  Ai , BJT   o  1

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Transistor Amplifier Configurations

Summary of Common Base and Common Gate Characteristics

The input and output
impedances are the
opposite of what is
typically needed for a
•High Voltage Gain
voltage amplifier. Thus,
•Non-Inverting
Non Inverting Voltage Gain Common Emitter/Source
amplifiers are normally
•Very Low Input Impedance used instead of Common
Base/Gate. The input and
•Very
V Hi High
hO Output
t t Impedance
I d output impedances are
useful for current
amplifiers but the current
gain
i is
i att best
b t unity.
it Thus
Th
a current buffer is one
useful application for the
Common Base/Gate

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Multistage Amplifier Configurations

You can combine or Cascade configurations to produce “High

High Performance”
Performance amplifiers
with High input impedance, low output impedance and huge voltage gains.
vo vth ,input v1 v 2 vo
Av  
vs v s vth ,input v1 v 2

v1 v2
vo

mpedance,

maintainss positive
des High
pedance,
pedance,
des High

des Low
Moderatelly high

previous sstage
high gain, and

vious
gain
gain

no gain, but
he
corrects th

CC provid
CE provid
Input Imp
Input Imp

output Im
CS provid

negative g
negative g

from prev

gain from
stage

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Multistage Amplifier Configurations

For AC-Coupled amplifiers (capacitors between stages),

stages) the DC solution reduces to three
parallel and independent circuits!

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Multistage Amplifier Configurations

For AC-Coupled amplifiers (capacitors between stages),

stages) the AC solution reduces to three
circuits, each of which has a load dependent on the input resistance of the next stage!
Continued….

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Multistage Amplifier Configurations

Continued….(For
Continued (For AC-Coupled amplifiers (capacitors between stages),
stages) the AC solution
reduces to three circuits, each of which has a load dependent on the input resistance of
the next stage!)

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Multistage Amplifier Configurations
Continued...

vth RG v1 v2
 1   g m1 ( ro1 || R11 || r 2 )
vs RS  RG vth v1
v3
  g m 2 ( ro 2 || R12 || RinQ 4 )
v2
We just found this!
  g m 2 ( ro 2 || R12 || r 3    1RL 3 )
v3
v2 Note: an exact solution would have RL3||ro3
v 3  vo  v 4
 1 
vo  v 4   g m 3 ( ro 3 || RL 3 )
 r 3 
 1 
vo  v3  vo   g m 3 ( ro 3 || RL 3 )
 r 3 
 1 
  g m 3 ( ro 3 || RL 3 )
  3 
vo r
v3  1 
1    g m 3 ( ro 3 || RL 3 )
 r 3 
  1  
   g m 3 ( ro 3 || RL 3 ) 
 r 
Av  o  th 1 2 3 o  (1) g m1 ( ro1 || R11 || r 2 )  g m 2 ( ro 2 || R12 || r 3    1RL 3 )    3 
v v v v v v

 1   1  g m 3 ( ro 3 || RL 3 ) 
v s v s vth v1 v 2 v3
 r  
  3  
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Multistage Amplifier Configurations

AC-Coupled amplifiers (capacitors between stages),

stages) have one major limitation.
limitation They do
not amplify low frequencies or DC voltages. To accomplish this, we must DC-Couple
the stages as shown. Note: for this to be a DC coupled amp, C1 and C6 should also be
replaced as shorts.

Since the bias here is usually ~(2/3)V

(2/3)Vcc (Vcc =15V in this example) , it is easier to use a
PNP for the second stage so that VEB+IERE2 ~ (2/3)Vcc

Georgia Tech ECE 3040 - Dr. Alan Doolittle