TLP620,TLP620−2,TLP620−4

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP620, TLP620−2, TLP620−4

Programmable Controllers Unit in mm
AC / DC−Input Module
Telecommunication

The TOSHIBA TLP620, −2 and −4 consists of a photo−transistor

optically coupled to two gallium arsenide infrared emitting diode
connected in inverse parallel.
The TLP620−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP620−4 provides four isolated channels in a sixteen plastic
DIP.

• Collector−emitter voltage: 55V (min.) TOSHIBA 11−5B2

• Current transfer ratio: 50% (min.) Weight: 0.26 g (typ.)
Rank GB: 100% (min.)

Pin Configurations (top view)

TLP620 TLP620-2 TLP620-4
1 4 1 8 1 16

2 3 2 7 2 15

1 : ANODE
CATHODE 3 6 3 14
2 : CATHODE TOSHIBA 11−10C4
ANODE
3 : EMITTER 4 5 4 13 Weight: 0.54 g (typ.)
4 : COLLECTOR
1, 3 : ANODE
5 12
CATHODE
2, 4 : CATHODE
ANODE
5, 7 : EMITTER 6 11
6, 8 : COLLECTOR

7 10

8 9

1, 3, 5, 7 : ANODE, CATHODE
2, 4, 6, 8 : CATHODE, ANODE
9, 11, 13, 15 : EMITTER
10, 12, 14, 16 : COLLECTOR

TOSHIBA 11−20A3
Weight: 1.1 g (typ.)

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Made In Japan Made In Thailand

UL recognized E67349 *1 E152349 *1

BSI approved 7426, 7427 *2 7426, 7427 *2

*1 UL1577
*2 BS EN60065: 2002, BS EN60950-1: 2002
• Isolation voltage: 5000Vrms (min.)
• Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no.40009302
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK

(Note) When an EN 60747-5-2 approved type is needed,

please designate the “Option(D4)”.

• Creepage distance: 6.4mm (min.)

Clearance: 6.4mm (min.)
Insulation thickness: 0.4mm (min.)

Absolute Maximum Ratings (Ta = 25°C)

Rating
Characteristic Symbol TLP620−2 Unit
TLP620
TLP620−4
Forward current IF (RMS) 60 50 mA
Forward current derating ΔIF / °C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA / °C
Pulse forward current IFP 1 (100μs pulse, 100pps) A
LED

Power dissipation (1 circuit) PD 100 70 mW

Power dissipation derating ΔPD / °C −1.0 −0.7 mW / °C
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 55 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Detector

Collector power dissipation

PC 150 100 mW
(1 circuit)
Collector power dissipation
ΔPC / °C −1.5 −1.0 mW / °C
derating (1 circuit) (Ta ≥ 25°C)
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −55~100 °C
Lead soldering temperature Tsold 260 (10s) °C
Total package power dissipation PT 250 150 mW
Total package power dissipation
ΔPT / °C −2.5 −1.5 mW / °C
derating (Ta ≥ 25°C, 1 circuit)
Isolation voltage BVS 5000 (AC, 1 min., RH ≤ 60%) Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

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Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 24 V

Forward current IF (RMS) ― 16 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25 ― 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V

LED

Forward current IF VF = ±0.7V ― 2.5 20 μA

Capacitance CT V = 0, f = 1MHz ― 60 ― pF
Collector−emitter
V (BR) CEO IC = 0.5mA 55 ― ― V
breakdown voltage
Emitter−collector
V (BR) ECO IE = 0.1mA 7 ― ― V
Detector

breakdown voltage
VCE = 24V ― 10 100 nA
Collector dark current ICEO
VCE = 24V, Ta = 85°C ― 2 50 μA
Capacitance
CCE VCE = 0, f = 1MHz ― 10 ― pF
(collector to emitter)

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition MIn. Typ. Max. Unit

IF = ±5mA, VCE = 5V 50 ― 600

Current transfer ratio IC / IF %
Rank GB
100 ― 600

IF = ±1mA, VCE = 0.4V ― 60 ―

Saturated CTR IC / IF (sat) %
Rank GB 30 ― ―
IC = 2.4mA, IF = ±8mA ― ― 0.4
Collector−emitter saturation
VCE (sat) IC = 0.2 mA, IF = ±1 mA ― 0.2 ― V
voltage
Rank GB ― ― 0.4
Off−state collector current IC (off) VF = ± 0.7V, VCE = 24V ― 1 10 μA
CTR symmetry IC (ratio) IC (IF = −5mA) / IC (IF = +5mA) 0.33 1 3 ―

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Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance input to
CS VS = 0, f = 1MHz ― 0.8 ― pF
output
12 14
Isolation resistance RS VS = 500V 1×10 10 ― Ω
AC, 1 minute 5000 ― ―
Vrms
Isolation voltage BVS AC, 1 second, in oil ― 10000 ―
DC, 1 minute, in oil ― 10000 ― Vdc

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Rise time tr ― 2 ―
Fall time tf VCC = 10V ― 3 ―
IC = 2mA μs
Turn−on time ton RL = 100Ω ― 3 ―
Turn−off time toff ― 3 ―
Turn−on time tON ― 2 ―
RL = 1.9kΩ (Fig.1)
Storage time ts ― 15 ― μs
VCC = 5V, IF = ±16mA
Turn−off time tOFF ― 25 ―

Fig. 1 Switching time test circuit

VCC IF
IF
VCC
RL tS
4.5V
VCE VCE
0.5V

tON tOFF

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TLP620-2
TLP620 IF – Ta TLP620-4 IF – Ta
100 100

80 80
Allowable forward current

Allowable forward current

IF (RMS) (mA)

IF (RMS) (mA)
60 60

40 40

20 20

0 0
−20 0 20 40 60 80 100 120 −20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

TLP620-2
TLP620 PC – Ta TLP620-4 PC – Ta
240 120

200 100
Allowable collector power

Allowable collector power

dissipation PC (mW)

dissipation PC (mW)

160 80

120 60

80 40

40 20

0 0
−20 0 20 40 60 80 100 120 −20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

TLP620-2
TLP620 IFP – DR TLP620-4 IFP – DR
3000 3000
Pulse width≦100μs Pulse width≦100μs
Ta = 25°C Ta = 25°C

1000 1000
Allowable pulse forward current
Allowable pulse forward current

500 500
300 300
IFP (mA)
IFP (mA)

100 100

50 50
30 30

10 10
− − − − − −
3 10 3 3 10 2 3 10 1 3 100 3 10 3 3 10 2 3 10 1 3 100

Duty cycle ratio DR Duty cycle ratio DR

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IF – V F ΔVF / ΔTa – IF
100
Ta = 25°C
50 −2.8

coefficient ΔVF / ΔTa (mV / °C)

Forward voltage temperature
30
(mA)

−2.4

10
IF

−2.0
5
Forward current

3
−1.6

1
−1.2
0.5
0.3 −0.8

0.1 −0.4
0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 0.3 1 3 10 30

Forward voltage VF (V) Forward current IF (mA)

IFP – VFP ID – Ta
1000
Pulse width≦10μs 101
500 Repetitive 10
ID (μA)
IFP (mA)

300 Frequency = 100Hz 5

VCE = 24V
Ta = 25°C 100

100
Collector dark current

−
50 10 1
Pulse forward current

30

−
10 2
10

5 −
10 3
3

−
1 10 4
0 0.4 0.8 1.2 1.6 2.0 2.4 0 40 80 120 160

Pulse forward voltage VFP (V) Ambient temperature Ta (°C)

IC – VCE IC – VCE
80
Ta = 25°C Ta = 25°C

25 50mA
IC (mA)

IC (mA)

60 40mA
20
30mA 30mA
20mA
Collector current

Collector current

20mA
40 50mA 15
15mA
10mA

PC (MAX.) 10
10mA 5mA
20
5 IF = 2mA
IF = 5mA

0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

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VF – IF IC – V F
60 100
Ta = 25°C Ta = 25°C 10
50
30 5
40

(mA)
(mA)

10
VCE = 0.4V

IC
20
IF

5
3

Collector current
Forward voltage

0
1
0.5
−20 0.3

0.1
−40
0.05
0.03
−3 −2 −1 0 1 2 3
0.01
Forward voltage VF (V) 0.8 0.9 1.0 1.1 1.2 1.3

Forward voltage VF (V)

IC – IF
100
Ta = 25°C
VCE = 5V
50
(mA)

VCE = 0.4V
30
IC

10 IC / IF – IF
Collector current

500
5
300
3 Sample A
Sample A
Current transfer ratio

Sample B
1 100
IC / IF (%)

0.5 Sample B
50
0.3
30
Ta = 25°C
VCE = 5V
0.1
VCE = 0.4V
10
0.05
0.03 5
0.3 1 3 10 30 100 1
0.3 3 10 30 100

Forward current IF (mA) Forward current IF (mA)

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IC – Ta VCE (sat) – Ta
100 0.24
VCE = 5V IF = 5mA
IF = 25mA
50 IC = 1mA
0.20
(mA)

Collector-emitter saturation
voltage VCE (sat) (V)
30
10

0.16
IC

5
10
Collector current

0.12
5

3 0.08

1
0.04
1

0.5 0.5 0
−20 0 20 40 60 80 100
0.3
Ambient temperature Ta (°C)

0.1
−20 0 20 40 60 80 100

Ambient temperature Ta (°C)

RL – Switching Time
1000
Ta = 25°C
IF = 16mA
ton, toff, ts Test condition 500
VCC = 5V
VCC 300
(μs)

IF IF
RL tOFF
Switching time

VCE 4.5V 5V 100

VCE 0.5V
50 ts
ts
RBE 30
tON
tOFF
10

3 tON

1
1 3 10 30 100

Load resistance RL (kΩ)

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 TLP620,TLP620−2,TLP620−4

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

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