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Lockdown Period
Open Practice Test Series
(Also useful for ESE & Other Exams)
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EC : ELECTRONICS ENGINEERING
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TEST No. - 03 | ELECTRONICS DEVICES

Read the following instructions carefully

1. This question paper contains 33 MCQ’s & NAQ’s. Bifurcation of the questions are given below:
M

2. Choose the closest numerical answer among the choices given.

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Multiple Choice Questions : Q.1 to Q.10 carry 1 mark each

Q.1 The relationship among mobility (µ), conductivity (σ) and Hall coefficient (RH ) is
(a) µ = σ RH (b) σ = µRH
µ2
(c) RH = σµ (d) µ =
RH

1. (a)

Q.2 For a BJT, ICBO = 1 µA and ICEO = 0.1 mA. The common emitter mode current gain is
(a) 99 (b) 100
98
(c) 0.99 (d)
99

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2. (a)
ICEO = ICBO (1 + β)
× 10–3 = (1 + β) × 10 –6
10–1
β = 99
β :Common emitter mode current gain.

Q.3
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The softness factor for soft-recovery diode are
(a) Less than unity (b) greater than unity
(c) unity (d) zero

3. (c)

Q.4 The junction capacitance of a p - n junction depends on

(a) Doping concentration only
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(b) Applied voltage only

(c) Both doping concentration and applied voltage
(d) Barrier potential only
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4. (c)

Q.5 For a silicon n - p -n transistor, the base to emitter voltage (VBE) is 0.7 and the transistor is operating in
saturation mode. The collector to base voltage (VCB ) can take which of the following values.
(a) –0.2 (b) 0.2
(c) 0.3 (d) Both (b) and (c)
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5. (a)
VBE VCB
– + – +
n p n
E B C
VBE is positive, D1 forward biased
VCB is negative, D2 forward biased
Thus, for diode to operate, VCB can take negative values.

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Q.6 Using constant voltage scaling mode, the gate area of the device gets scaled as 0.25. The scaling factor
of MOS device is
1
(a) 2 (b)
2

1
(c) 4 (d)
4

6. (a)
Scaling factor of MOS device is α
1
Gate area gets scaled as
α2

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1 1
2 =
α 4
⇒ α = 2

Q.7 The intrinsic carrier concentration of silicon sample at T = 300 K is ni = 1.5 × 1010 cm–3. The thermal
equilibrium concentration of holes is 4.5 × 1015 cm–3. The concentration of electrons is
(a) 2.25 × 1020 cm–3 (b) 5 × 104 cm–3

7.
5
(c) 5 × 10 cm

(b)
–3
EA (d) None of these

np = ni2
⇒ 4.5 × 1015 × n = 2.25 × 1020
n = 0.5 × 105
= 5 × 104 cm–3
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Q.8 A tunnel diode is

(a) high resistivity p -n junction diode (b) a slow switching device
(c) an amplifying device (d) a very heavily doped p -n junction
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8. (d)

Q.9 Consider a MOSFET in saturation mode. If the drain voltage is decreased, then effective channel length of
the device
(a) increases (b) decreases
(c) remains unaltered (d) increases exponentially
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9. (a)
When drain voltage increases ; the channel becomes tampered and hence length reduces and vice-versa.

Q.10
Anode Cathode
The above symbol represents a
(a) Tunnel diode (b) Zener diode
(c) Schottky diode (d) UJT (unijunction Thyristor)

10. (c)

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Numerical Answer Type Questions : Q. 11 to Q. 16 carry 1 mark each

Q.11 A p -type semiconductor, silicon sample. If the sample is doped with Boron with a concentration of
2.5 × 1013 cm–3 and with Arsenic at a concentration of 1 × 1013 cm–3. The majority concentration
is _______ × 1013 cm–3.

11. 1.5 (1.00 to 2.00)

Na = 2.5 × 1013, Nd = 1 × 1013
Na > Nd ⇒ Material is p -type as given
Majority concentration = Na – Nd
= 1.5 × 1013 cm–3

Q.12 In an uniformly doped GaAs junction at T = 300 K, at zero bias, only 20% of the total space charge region

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N 
is in p - region. The ratio of impurity doping concentrations Nd to Na i.e.  d  is ________.
 Na 

12. (0.25)
xp = 0.2 (xP + xN )
0.8 x p = 0.2 xN EA
xP 1
=
xN 4
Na xP = Nd xN
xP Nd 1
xN = = = 0.25
Na 4
Q.13 The minority carrier hole diffusion coefficient is Dp = 12 cm2/s and majority carrier electron diffusion
coefficient is Dn = 48 cm2/s. If the sum of election and hole mobilities is 100 cm2/V-sec, then electron
E

mobility is ___________ (cm2/ V-sec)

13. 80 (79 to 81)

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Dn Dp
= = VT (Eienstein’s equation)
µN µP
48 12
⇒ =
µN µP
µN
⇒ 4 = µ
M

P
µP + µN = 100 (given)
5µP = 100
µP = 20
µN = 80 cm2 /V-sec

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Q.14 Consider the circuit shown below

0.7 V –
+

10 V 4.65 kΩ

Assuming VT to be 25 mV, the diffusion resistance of the diode shown above will be _____Ω .
(take η = 1)
14. 12.5 (12.20 to 12.80)

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10 − 0.7
ID = = 2 mA
4.65 × 103
VT 25 × 10−3
r = =
ID 2 × 10−3
= 12.5 Ω
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Q.15 In a bipolar transistor, the total delay time (T - sec) is 2.5 × 10 –11 seconds. The cut-off frequency
is ________ GHz.

15. 6.36 (6.00 to 6.50)

1 1
fT = = × 1011
2 πT 2 π × 2.5
100
× 109
E
=
5π
20
= × 109 Hz
π
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2
Q.16 For a n -channel enhancement MOSFET the parameter are VTN = 0.8 V, kn = 5 mA/V and VGS = 2.4 V. If the

W
transistor is biased in saturation region with ID = 0.5 mA. The required is
L

16. 78 (78.00 to 78.50)

M

kn  W 
ID =  (Vgs − VTN )
2
2  L 
W
= 78.125
L

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Multiple Choice Questions : Q.17 to Q.26 carry 2 marks each

Q.17 A zener diode is operated in breakdown condition as shown in the circuit. If the range of IL (load current) is
5 mA < IL < 13 mA. The value of Iz (max) is
1k IL

IZ
+
25 V 12 V RL
–

(a) 5 mA (b) 8 mA
(c) 13 mA (d) None of these

17. (b)

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Is = IZ + IL
25 − 12
= IZ + IL
1k
13 mA = IZ + IL
13 mA = IZ max + IL min
13 – 5 = IZ max = 8 mA
EA
Q.18 Match List-I with List-II and select the correct answer using the code given below the lists:
List-I List-II
A. Hall effect 1. Concentration gradient
B. Diffusion current 2. Electric field
C. Drift current 3. Sum of electron and hole current
D. Current in extrinsic semiconductor 4. Induced electric field
A B C D
E

(a) 3 1 2 4
(b) 4 2 1 3
(c) 4 1 2 3
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(d) 3 2 1 4

18. (c)

Q.19 A pnp BJT is operated in active region with an emitter injection efficiency of 0.98. Out of 99 mA of hole
current injected into base 1.98 mA recombines in base. The current gain in common base configuration for
the BJT is
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(a) 0.9604 (b) 0.9900

(c) 0.0198 (d) 0.0196

19. (a)
α = β∗ γ
γ : emitter injection efficiency
98
γ = = 0.98
100
βx = base transport factor
99 − 1.98 2
β = = 1− = 0.98
99 100
α = common base gain
= 0.98 × 0.98 = 0.9604

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Q.20 Epitaxial growth in I.C chip

(a) Involves growth from liquid phase (b) Involves growth from gass phase
(c) May be p - type only (d) All of the above

20. (d)

Q.21 Consider the MOS device as shown in the figure. When drain voltage is varied from 5 volt to 1 volt, the
current ID changes from 2 mA to 1 mA. Then the channel length modulation parameter λ is
VD

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Vs

(a) 0.33 V –1 (b) 0.66 V –1

(c) 1 V –1 (d) 2 V –1

21. (a)
kn′
(Vgs − VTN ) (1 + λVDS )
2
ID = ... as transistor is in saturation

ID ∝
2
EA
(1+ λVDS )
ID1 1 + λVDS1
ID2 =
1 + λVDS2
2 + 2λ VDS = 1 + λ VDS
2 1
1 = λ VDS – 2λ VDS
1 2
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1 1 1
= λ= = = 0.33 V −1
VDS1 − 2VDS2 5 − 2 3
AD

Q.22 In a germanium semiconductor sample at T = 300 K the acceptor concentration is Na = 1013 cm–3 and
donor concentration Nd = 0. The thermal equilibrium hole concentration P0 is
(Assume ni = 2.449 × 1013 cm–3)
(a) 2.97 × 109 cm–3 (b) 2.99 × 1013 cm–3
(c) 2.68 × 1012 cm–3 (d) 2.4 cm–3

22. (b)
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Na + p = Nd + n
⇒ Na + p = n
np = ni 2
(Na + p) p = ni 2
⇒ p 2 + pNa – n i 2 = 0

Na ± (Na )2 + 4ni2
p0 =
2
2
 1013 
1013
( )
2
p0 = ±   + 2.449 × 10
13
2  2 
p 0 = 0.5 + 0.25 + 6 × 1013
= 3 × 1013 cm–3

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VBE
Q.23 In a bipolar transistor, ic = Is exp and ic = βi β. What is the value of rπ of small signal model.
ηVT

ic ηβ VT
(a) (b) ic
ηVT
VT VT
(c) (d) βi
ic c

23. (b)

VBE
ic = Is exp
ηVT

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∂ic Is V i
= gm = exp BE = c
∂VBE ηVT ηVT ηVT

β βV η
rπ = = T
gmEA ic

Q.24 The measured transconductance g m of NMOS transistor operating in triode region is plotted against the
gate voltage VG at a constant drain voltage VD . Which of the following figures represents the expected
dependence of gm on VG ?
gm
gm
E
(a) (b)

VG
VG
gm
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(c) (d)

VG
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24. (c)
In triode region a transconductance gm is linearly varies with VGS .

Q.25 The n -type substrate in a monolithic circuit should be connected to

(a) any dc ground point
(b) the most negative voltage available in the circuit
(c) the most positive voltage available in the circuit
(d) no where, i.e floating

25. (c)

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Q.26 Silicon dioxide layer is used in IC chips for

(a) providing mechanical strength to the chip
(b) providing contacts
(c) diffusing elements
(d) providing mask against diffusion

26. (d)

Numerical Answer Type Questions : Q.27 to Q.33 carry 2 marks each

Q.27 A silicon pn junction at T = 300 K has Nd = 1013 cm–3 and Na = 1017 cm–3. The built-in voltage
is ____________ mV. (ni = 1010 cm–3). (Assume VT = 26 mV)

27. 598.78 (595 to 600)

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N N 
V0 = VT ln  a 2 d 
 ni 
 1013 ⋅1017 
V0 = VT ln 
 1020 
 

V0 = VT ⋅ ln(1010)
EA
V0 = 10 VT ln 10
V0 = 10 × 26 × 2.303
V0 = 598.78 mV

Q.28 The magnitude of induced Hall Voltage VH in the given figure is ________ Volts. Given n type Ge bar with
doping = 1.5 × 106 cm–3, BZ = 0.5 mWb/m2, d y = 4 × 10–3 m, E y = 700 V/m, µn = 0.38 m2/ Vsec,
Wz = 1 × 10 –3 m.
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28. 33.25 (33.00 to 33.50)

y
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dy
x

Lx
z
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Bz = 0.5 mWb/m2
Vd = µE = 0.38 × 700 m/sec
EH Vd B 0.38 × 700 × 0.5 × 10−3
VH = d = d =
y y 4 × 10 −3
VH = 33.25 Volts

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Q.29 Consider n -type silicon in MOS structure at T = 300 K. The surface potential that results in maximum
space change width is –0.518 V. The semiconductor doping is _______ × 10 13 cm –3.
(Assume ni = 1.5 × 1010 cm–3, VT = 25.9 milli Volts.

29. 33.03 (32.00 to 35.00)

φs = –2φF

N 
φF = −VT ln  D 
 ni 

− 0.518 N 
= − 0.0259 ln  D 
2  ni 

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−0.259 N 
= ln  D 
−0.0259  ni 
ND = ni e10
ND = 1.5 × 1010 × e10
= 3.3 × 1014
EA
ND = 33 × 1013 cm –3

Q.30 In Avalanche photo diode assume the saturation velocity of charge carriers generated by impact ionization
by photon absorbtion be equal to 107 cm/sec in a depletion region that is 10 µm wider then the transition
time will be ____________ psec

30. (100)
10 × 10 −4
τt = = 100 psec
E

107
Q.31 Given the band gap of cadmium sulphide is 2.5 eV, the maximum photon wavelength, for electron-hole
pair generation will be ___________ Å.
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31. 4960 (4500 to 5500)

1.24
Eg =
λ (µm)

1.24
λ = = 0.496 µm
2.5
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= 4960 Å

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Q.32 Assuming φs = 2φf, where φs = voltage at strong inversion and φf is the voltage developed at the metal
semiconductor junction interface at zero bias, then the value of φs (given NA = 1016 and ni = 1.5 × 1010) for
MOS capacitor will be _____ V?

32. 0.67 (0.55 to 0.75)

N 
φs = 2VT l n  A 
 ni 
 1016 
= 2 × 0.025 l n  
 1.5 × 1010 
= 0.67 V

Q.33 A silicon diode is carrying a current of 1 mA. When the temperature of the diode is 20°C, VD is found to

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700 mV. If the temperature rises to 40°C. VD becomes approximately _______ V.

33. 0.65 (0.60 to 0.70)

VD change by –2.5 mV/°C
For 40 – 20 = 20° rise
VD decrease by 50 mV approx
700 – 50 = 650 mV
= 0.65 V
EA

E
AD
M

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