MITSUBISHI INTELLIGENT POWER MODULES

PM400DVA060
FLAT-BASE TYPE
INSULATED PACKAGE

A T - 4 TYP.
D
Xφ (2 PLACES)

H
J
B E F

U V
R W SQ. PIN
(10 PLACES)
S NUTS - 3 TYP. Q Q P N G

K K K M TERMINAL CODE
1. VN1 1. VP1
Description:
2. SNR 2. SPR Mitsubishi Intelligent Power Mod-
C Y L 3. CN1 3. CP1 ules are isolated base modules de-
4. VNC 4. VPC
5. FNO 5. FPO signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
VNC CN1 SNR FNO VN1 VPC CP1 SPR FPO VP1 vide optimum gate drive and pro-
tection for the IGBT and free-wheel
CI RFO CI RFO
diode power devices.
IN SR FO IN SR FO

GND
SENS OUT 1
VCC GND
SENS OUT 1
VCC Features:
SINK OUT 2 TEMP SINK OUT 2 TEMP u Complete Output Power
RREF
Circuit
AMP AMP u Gate Drive Circuit
RG
TH
RG
u Protection Logic
– Short Circuit
– Over Temperature
– Under Voltage
E2 C2E1 C1

Applications:
u Inverters
Outline Drawing and Circuit Diagram u UPS
u Motion/Servo Control
Dimensions Inches Millimeters Dimensions Inches Millimeters u Power Supplies
A 4.72 120.0 N 0.12 3.0
Ordering Information:
B 2.76 70.0 P 1.50 38.0
Example: Select the complete
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Q 0.98 25.0
part number from the table below
D 4.17±0.010 106.0±0.25 R 0.37 9.3 -i.e. PM400DVA060 is a 600V,
E 2.20±0.010 56.0±0.25 S M6 Metric M6 400 Ampere Intelligent Power Mod-
F 1.52 38.5 T 0.26 Dia. Dia. 6.5 ule.
G 0.16 4.0 U 0.72 18.3 Type Current Rating VCES
H 0.16 4.01 V 0.10 2.54 Amperes Volts (x 10)
J 0.40 10.16 W 0.025 SQ 0.64 SQ PM 400 60
K 0.55 14.0 X 0.14 Dia. 3.5 Dia.
L 1.02 26.0 Y 1.10 28.0
M 0.45 11.5

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM400DVA060
FLAT-BASE TYPE
INSULATED PACKAGE

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol PM400DVA060 Units
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC -20 to 100 °C
Mounting Torque, M6 Mounting Screws — 3.92~5.88 N·m
Mounting Torque, M6 Main Terminal Screws — 3.92~5.88 N·m
Module Weight (Typical) — 510 Grams
Supply Voltage (Applied between C1-E2) VCC(surge) 500 Volts
Supply Voltage Protected by SC (VD = 13.5 ~16.5V, Inverter Part, Tj = 125°C Start) VCC(prot.) 400 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms

Control Sector
Supply Voltage (Applied between VP1-VPC, VN1-VNC) VD 20 Volts
Input Voltage (Applied between CP1-VPC, VN1-VNC) VCIN 10 Volts
Fault Output Supply Voltage (Applied between FPO-VPC, FNO-VNC) VFO 20 Volts
Fault Output Current (Sink Current at FPO, FNO Terminal) IFO 20 mA

IGBT Inverter Sector

Collector-Emitter Voltage (VD = 15V, VCIN = 5V) VCES 600 Volts
Collector Current, (TC = 25°C) IC 400 Amperes
Peak Collector Current, (TC = 25°C) ICP 800 Amperes
Collector Dissipation (TC = 25°C) PC 1136 Watts

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM400DVA060
FLAT-BASE TYPE
INSULATED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Control Sector
Short Circuit Trip Level SC -20°C ≤ Tj ≤ 125°C, VD = 15V 650 910 — Amperes
Short Circuit Current Delay Time toff(SC) VD = 15V — 10 — µs
Over Temperature Protection OT Trip Level 100 110 120 °C
(VD = 15V, Lower Arm) OTr Reset Level 85 95 105 °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
(-20°C ≤ Tj ≤ 125°C) UVr Reset Level — 12.5 — Volts
Circuit Current ID VD = 15V, VCIN = 5V, VN1-VNC — 23 30 mA
VD = 15V, VCIN = 5V, VP1-VPC — 23 30 mA
Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) CP1-VPC, CN1-VNC 1.7 2.0 2.3 Volts
Fault Output Current IFO(H) VD = 15V, VFO = 15V* — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V* — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V* 1.0 1.8 — ms
SXR Terminal Output Voltage VSXR Tj ≤ 125°C, Rin = 6.8kΩ (SPR, SNR) 4.5 5.1 5.6 Volts
* Fault output is given only when the internal SC, OT, and UV protections circuits of either an upper-arm or a lower-arm device operate to protect it.

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM400DVA060
FLAT-BASE TYPE
INSULATED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

IGBT Inverter Sector

Collector-Emitter Cutoff Current ICES VCE = VCES, VD = 15V, Tj = 25°C — — 1.0 mA
VCE = VCES, VD = 15V, Tj = 125°C — — 10.0 mA
FWDi Forward Voltage VEC -IC = 400A, VD = 15V, VCIN = 5V — 2.20 3.30 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 400A, — 2.35 2.80 Volts
Pulsed, Tj = 25°C
VD = 15V, VCIN = 0V, IC = 400A, — 2.55 3.05 Volts
Pulsed, Tj = 125°C
Inductive Load Switching Times ton 0.5 1.4 2.5 µs
trr VD = 15V, VCIN = 0 ↔ 5V — 0.15 0.3 µs
tC(on) VCC = 300V, IC = 400A, — 0.4 1.0 µs
toff Tj = 125°C — 2.0 3.0 µs
tC(off) — 0.5 1.0 µs

Thermal Characteristics
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 0.11 °C/Watt
Rth(j-c)F Each Inverter FWDi — — 0.18 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, — — 0.081 °C/Watt
Thermal Grease Applied

Recommended Conditions for Use

Characteristic Symbol Condition Value Units
Supply Voltage VCC Applied across C1-E2 Terminals ≤ 400 Volts
VCE(surge) Applied across C1-E1, C2-E2 Terminals ≤ 500 Volts
VD Applied between 15 ± 1.5 Volts
VP1-VPC, VN1-VNC *
Input ON Voltage VCIN(on) Applied between ≤ 0.8 Volts
Input OFF Voltage VCIN(off) CP1-VPC, CN1-VNC ≥ 4.0 Volts
Arm Shoot-Through Blocking Time tDEAD For IPM's each Input Signal ≥ 3.5 µs
* With ripple satisfying the following conditions, dv/dt swing ≤ 5V/µs, Variation ≤ 2V peak to peak.

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM400DVA060
FLAT-BASE TYPE
INSULATED PACKAGE

COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS SATURATON VOLTAGE CHARACTERISTICS OUTPUT CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
3.0 3.0 300
COLLECTOR-EMITTER VOLTAGE, VCE(SAT), (VOLTS)

COLLECTOR-EMITTER SATURATION VOLTAGE,

VD = 15V Tj = 25oC

COLLECTOR CURRENT, IC, (AMPERES)

VCIN = 0V VCIN = 0V
Tj = 25°C
VD = 17V
Tj = 125°C 15
2.0 2.0 200
VCE(SAT), (VOLTS)

13

1.0 1.0 100

IC = 400A
VCIN = 0V
Tj = 25°C
Tj = 125°C
0 0 0
0 200 400 600 0 14 18 22 0 10 20 30
COLLECTOR CURRENT, IC, (AMPERES) CONTROL SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SWITCHING TIME VS. SWITCHING TIME VS. SWITCHING LOSS

COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT (TYPICAL) CHARACTERISTICS (TYPICAL)
101 100 102

SWITCHING ENERGY, PSW(on), PSW(off), (mJ/PULSE)

VCC = 300V
VD = 15V
SWITCHING TIMES, tc(on), tc(off), (µs)

tc(off) Inductive Load

SWITCHING TIMES, ton, toff, (µs)

Tj = 25°C PSW(off)
Tj = 125°C
101
toff tc(on)
PSW(on)
100 ton
10-1

VCC = 300V VCC = 300V 100

VD = 15V VD = 15V
Inductive Load Inductive Load
Tj = 25°C Tj = 25°C
Tj = 125°C Tj = 125°C
10-1 10-2 10-1
102 103 104 101 102 103 101 102 103
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)

REVERSE RECOVERY CURRENT VS. CIRCUIT CURRENT VS.

COLLECTOR CURRENT (TYPICAL) DIODE FORWARD CHARACTERISTICS CARRIER FREQUENCY
101 104 103 150
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

VCC = 300V VD = 15V VD = 15V

VD = 15V VCIN = 15V Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (µs)

Inductive Load Tj = 25°C

CIRCUIT CURRENT, ID, (mA)

Tj = 25°C Tj = 125°C
100 Tj = 125°C 103 102 100

Irr
10-1 trr 102 101 50

10-2 101 100 0

101 102 103 0 1.0 2.0 3.0 0 10 20 30
COLLECTOR CURRENT, IE, (AMPERES) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) CARRIER FREQUENCY, fC, (kHz)

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM400DVA060
FLAT-BASE TYPE
INSULATED PACKAGE

OVER CURRENT TRIP LEVEL VS. OVER CURRENT TRIP LEVEL FAULT OUTPUT PULSE WIDTH VS.
SUPPLY VOLTAGE (TYPICAL) TEMPERATURE DEPENDENCY (TYPICAL) TEMPERATURE (TYPICAL)
SHORT CIRCUIT CURRENT TRIP LEVEL, (VD = 15V) = 1.0

SHORT CIRCUIT CURRENT TRIP LEVEL, (Tj = 25°C) = 1.0

1.2 1.2 1.2
Tj = 25°C

FAULT OUTPUT PULSE WIDTH TRIP LEVEL,

1.0 1.0 1.0

tFO (Tj = 25°C) = 1.0

0.8 0.8 0.8

VD = 15V VD = 15V
0 0 0
0 13 15 17 -60 20 100 180 -60 20 100 180
CONTROL SUPPLY VOLTAGE, VD, (VOLTS) JUNCTION TEMPERATURE, Tj, (°C) JUNCTION TEMPERATURE, Tj, (°C)

CONTROL SUPPLY VOLTAGE TRIP-RESET TRANSIENT THERMAL TRANSIENT THERMAL

LEVEL TEMPERATURE DEPENDANCY IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(TYPICAL) (Each IGBT) (Each FWDi)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)

TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)

15 101 101
SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION

VD = 15V
TRIP RESET LEVEL, UVt, UVr, (VOLTS)

UVt
UVr
100 100
13

10-1 10-1

11
10-2 10-2
SINGLE PULSE SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.11°C/W STANDARD VALUE = Rth(j-c)F = 0.18°C/W
0 10-3 10-3
-60 20 100 180 10-3 10-2 10-1 100 10 1 10-3 10-2 10-1 100 10 1
JUNCTION TEMPERATURE, Tj, (°C)
TIME, (s) TIME, (s)

Sep.1998