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Unit 4

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48 views5 pages

Unit 4

Uploaded by

Tarun Singhal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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MOSFET

Introduction:

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a


semiconductor device which is widely used for switching and amplifying electronic signals in
the electronic devices. The MOSFET is a core of integrated circuit and it can be designed
and fabricated in a single chip because of these very small sizes. The MOSFET is a four
terminal device with source(S), gate (G), drain (D) and body (B) terminals. The body of the
MOSFET is frequently connected to the source terminal so making it a three terminal device
like field effect transistor. The MOSFET is very far the most common transistor and can be
used in both analog and digital circuits.

MOSFET

The MOSFET works by electronically varying the width of a channel along which charge
carriers flow (electrons or holes). The charge carriers enter the channel at source and exit via
the drain. The width of the channel is controlled by the voltage on an electrode is called gate
which is located between source and drain. It is insulated from the channel near an extremely
thin layer of metal oxide. The MOS capacity present in the device is the main part.
The MOSFET can function in two ways

Depletion Mode

Enhancement Mode

Depletion Mode:

When there is no voltage on the gate, the channel shows its maximum conductance. As the
voltage on the gate is either positive or negative, the channel conductivity decreases.

For example

Enhancement mode:

When there is no voltage on the gate the device does not conduct. More is the voltage on the
gate, the better the device can conduct.

Working Principle of MOSFET:

The aim of the MOSFET is to be able to control the voltage and current flow between the
source and drain. It works almost as a switch. The working of MOSFET depends upon the
MOS capacitor. The MOS capacitor is the main part of MOSFET. The semiconductor surface
at the below oxide layer which is located between source and drain terminal. It can be
inverted from p-type to n-type by applying a positive or negative gate voltages respectively.
When we apply the positive gate voltage the holes present under the oxide layer with a
repulsive force and holes are pushed downward with the substrate. The depletion region
populated by the bound negative charges which are associated with the acceptor atoms. The
electrons reach channel is formed. The positive voltage also attracts electrons from the n+
source and drain regions into the channel. Now, if a voltage is applied between the drain and
source, the current flows freely between the source and drain and the gate voltage controls the
electrons in the channel. Instead of positive voltage if we apply negative voltage , a hole
channel will be formed under the oxide layer.

MOSFET Block Diagram

P-Channel MOSFET:

The P- Channel MOSFET has a P- Channel region between source and drain. It is a four
terminal device such as gate, drain, source, body. The drain and source are heavily doped p+
region and the body or substrate is n-type. The flow of current is positively charged holes.
When we apply the negative gate voltage, the electrons present under the oxide layer with are
pushed downward into the substrate with a repulsive force. The depletion region populated by
the bound positive charges which are associated with the donor atoms. The negative gate
voltage also attracts holes from p+ source and drain region into the channel region.
N- Channel MOSFET:

The N-Channel MOSFET has a N- channel region between source and drain It is a four
terminal device such as gate, drain , source , body. This type of MOSFET the drain and
source are heavily doped n+ region and the substrate or body is P- type. The current flows
due to the negatively charged electrons. When we apply the positive gate voltage the holes
present under the oxide layer pushed downward into the substrate with a repulsive force. The
depletion region is populated by the bound negative charges which are associated with the
acceptor atoms. The electrons reach channel is formed. The positive voltage also attracts
electrons from the n+ source and drain regions into the channel. Now, if a voltage is applied
between the drain and source the current flows freely between the source and drain and the
gate voltage controls the electrons in the channel. Instead of positive voltage if we apply
negative voltage a hole channel will be formed under the oxide layer.
MOSFET as a Switch:

MOSFET SWITCH

In this circuit arrangement an enhanced mode and N-channel MOSFET is being used to
switch a sample lamp ON and OFF. The positive gate voltage is applied to the base of the
transistor and the lamp is ON (VGS =+v) or at zero voltage level the device turns off
(VGS=0). If the resistive load of the lamp was to be replaced by an inductive load and
connected to the relay or diode which is protect to the load. In the above circuit, it is a very
simple circuit for switching a resistive load such as lamp or LED. But when using MOSFET
to switch either inductive load or capacitive load protection is required to contain the
MOSFET device. We are not giving the protection the MOSFET device is damage. For the
MOSFET to operate as an analog switching device, it needs to be switched between its cutoff
region where VGS =0 and saturation region where VGS =+v.

Acknowledgement

https://www.elprocus.com/

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