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Introduction to Overvoltage Suppression

Voltage transients are defined as short duration surges of electrical energy and are the result of the sudden release
of energy that was previously stored, or induced by other means, such as heavy inductive loads or lightning strikes. In
electrical or electronic circuits, this energy can be released in a predictable manner via controlled switching actions,
or randomly induced into a circuit from external sources .

Repeatable transients are frequently caused by the operation of motors, generators, or the switching of reactive
circuit components. Random transients, on the other hand, are often caused by Lightning (Figure 1) and Electrostatic
Discharge (ESD) (Figure 2). Lightning and ESD generally occur unpredictably, and may require elaborate monitoring
to be accurately measured, especially if induced at the circuit board level. Numerous electronics standards groups
have analyzed transient voltage occurrences using accepted monitoring or testing methods. The key characteristics
of several transients are shown below in Table 1.

Figure 1. Lightning Transient Waveform

VOLTAGE CURRENT RISE-TIME DURATION

Lighting 25kV 20kA 10µs 1ms

Sw itching 600V 500A 50µs 500ms

EMP 1kV 10A 20ns 1ms

ESD 15kV 30A <1ns 100ns

Table 1. Examples of Transient Sources and Magnitude

Characteristics of Transient Voltage Spikes

Transient voltage spikes generally exhibit a "double exponential" wave form, shown in Figure 1 for lightning and
figure 2 for ESD. The exponential rise time of lightning is in the range 1.2µs to 10µs (essentially 10% to 90%) and the
duration is in the range of 50µs to 1000µs (50% of peak values). ESD on the other hand, is a much shorter duration
event. The rise time has been characterized at less than 1 ns. The overall duration is approximately 100ns.
Figure 2. ESD Test Waveform

Why are Transients of Increasing Concern?

Component miniaturization has resulted in increased sensitivity to electrical stresses. Microproc essors for example,
have structures and conductive paths which are unable to handle high currents from ESD transients. Such
components operate at very low voltages, so voltage disturbances must be controlled to prevent device interruption
and latent or catastrophic failures. Sensitive devices such as microprocessors are being adopted at an exponential
rate. Microprocessors are beginning to perform transparent operations never before imagined. Everything from home
appliances, such as dishwashers, to industrial controls and even toys, have increased the use of microprocessors to
improve functionality and efficiency.

Vehicles now employ many electronics systems to control the engine, climate, braking and, in some cases, steering
systems. Some of the innovations are designed to improve efficiency, but many are safety related, such as ABS and
traction control systems. Many of the features in appliances and automobiles use modules which present transient
threats (such as electric motors). Not only is the general environment hostile, but the equipment or appliance can also
be sources of threats. For this reason, careful circuit design and the correct use of overvoltage protection technology
will greatly improve the reliability and safety of the end application. Table 2 shows the vulnerability of various
component technologies.

Dev ice Type Vulnerability (v olts)

VMOS 30-1800

MOSFET 100-200

GaAsFET 100-300

EPROM 100

JFET 140-7000

CMOS 250-3000

Schottky Diodes 300-2500

Bipolar Transistors 380-7000

SCR 680-1000

TABLE 2. RANGE OF DEVICE VULNERABILITY.

 Transient Voltage Scenarios

ESD (Electrostatic Discharge)

Electrostatic discharge is characterized by very fast rise times and very high peak voltages and currents. This energy
is the result of an imbalance of positive and negative charges between objects.

Below are some examples of the voltages which can be generated, depending on the relative humidity (RH):

 Walking across a carpet:

35kV @ RH = 20%; 1.5kV @ RH = 65%

 Walking across a vinyl floor:

12kV @ RH = 20%; 250V @ RH = 65%

 Worker at a bench:
6kV @ RH = 20%; 100V @ RH = 65%

 Vinyl envelopes:
7kV @ RH = 20%; 600V @ RH = 65%

 Poly bag picked up from desk:

20kV @ RH = 20%; 1.2kV @ RH = 65%

Referring to Table 2 on the previous page, it can be seen that ESD that is generated by everyday activities can far
surpass the vulnerability threshold of standard semiconductor technologies. Figure 2 shows the ESD waveform as
defined in the IEC 61000-4-2 test specification.

Inductive Load Switching

The switching of inductive loads generates high energy transients which increase in magnitude with increasingly
heavy loads. When the inductive load is switched off, the collapsing magnetic field is converted into electrical energy
which takes the form of a double exponential transient. Depending on the source, these transients can be as large as
hundreds of volts and hundreds of Amps, with duration times of 400ms.

Typical sources of inductive transients are:

 Generator
 Motor
 Relay
 Transformer

These examples are extremely common in electrical and electronic systems. Because the sizes of the loads vary
according to the application, the wave shape, duration, peak current and peak voltage are all variables which exist in
real world transients. Once these variables can be approximated, a suitable suppressor technology can be selected.
Figure 3. Autom otive Load Dum p

Lightning Induced Transients

Even though a direct strike is clearly destructive, transients induced by lightning are not the result of a direct strike.
When a lightning strike occurs, the event creates a magnetic field which can induce transients of large magnitude in
nearby electrical cables.

Figure 4, shows how a cloud-to-cloud strike will effect not only ove RHead cables, but also buried cables. Even a
strike 1 mile distant (1.6km) can generate 70V in electrical cables.

Figure 4. Cloud-to-Cloud Lightning Strike

Figure 5, on the following page, shows the effect of a cloud -to-ground strike: the transient–generating effect is far
greater.
Figure 5. Cloud-to-Ground Lightning Strike

Figure 6, shows a typical current waveform for induced lightning disturbances.

Figure 6. Peak Pulse Current Test Waveform

Technological Solutions for Transient Threats

Because of the various types of transients and applications, it is important to correctly match the suppression solution
to the different applications. Littelfuse offers the broadest range of circuit protection technologies to ensure that you
get the proper solution for your application. Please consult our online library of Application Notes and Design Notes
for further information on common design issues encountered at http://www.littelfuse.com.

Metal Oxide Varistors and Multi-Layered Varistors

Varistors are voltage dependent, nonlinear devices which have electrical characteristics similar to back-to- back
Zener diodes. They are composed primarily of ZNO with small additions of other metal oxides such as Bismuth,
Cobalt, Magnese and others. The Metal Oxide Varistor or "MOV" is sintered during the manufacturing operation into a
ceramic semiconductor and results in a crystalline microstructure that allows MOVs to dissipate very high levels of
transient energy across the entire bulk of the device. Therefore, MOVs are typically used for the suppression of
lightning and other high energy transients found in industrial or AC line applications. Additionally, MOVs are used in
DC circuits such as low voltage power supplies and automobile applications. Their manufacturing process permits
many different form factors with the radial leaded disc being the most common.

Multilayer Varistors or MLVs are constructed of ZNO material similar to standard MOVs, however, they are fabricated
with interweaved layers of metal electrodes and supplied in leadless ceramic packages. As with standard MOVs,
Multilayers transition from a high impedance to a conduction state when subjected to voltages that exceed their
nominal voltage rating. MLVs are constructed in various chip form sizes and are capable of significant surge energy
for their physical size. Thus, data line and power supply suppression are achieved with one technology.

The following parameters apply to Varistors and/or Multilayer Varistors and should b e understood b y the circuit
designer to properly select a device for a given application.

Introduction to Varistor Technology

The varistor body structure consists of a matrix of conductive Z NO grains separated by grain boundaries providing P-
N junction semiconductor characteristics. These boundaries are responsible for blocking conduction at lo w voltages
and are the source of the nonlinear electrical conduction at higher voltages.

FIGURE 1. TYPICAL VARISTOR V-I CHARACTERISTIC

The symmetrical, sharp breakdown characteristics shown in Figure 1, enable the varistor to provide excellent
transient suppression performance. When exposed to high voltage transients the varistor impedance changes many
orders of magnitude from a near open circuit to a highly conductive level, thus clamping the transient voltage to a
safe level. The potentially destructive energy of the incoming transient pulse is absorbed by the varistor, thereby
protecting vulnerable circuit components.

Since electrical conduction occurs, in effect, between Z NO grains distributed throughout the bulk of the device, the
Littelfuse Varis tor is inherently more rugged than its single P-N junction counterparts, such as Zener diodes. In the
varistor, energy is absorbed uniformly throughout the body of the device with the resultant heating spread evenly
through its volume. Electrical properties are controlled mainly by the physical dimensions of the varistor body which is
sintered in various form factors such as discs, chips and tubes. The energy rating is determined by volume, voltage
rating by thickness or current flow path length, and current capability by area measured normal to the direction of
current flow.

Physical Properties
MOVs are designed to protect sensitive circuits against external transients (lightning) and internal transients
(inductive load switching, relay switching and capacitor discharges). And other high level transients found in
industrial, AC line application or lower level transients found in automotive DC line applications with peak current
rating ranging from 20A to 500A and peak energy rating from 0.05J - 2.5J.

An attractive property of the MOV is that the electrical characteristics are related to the bulk of the device. Each ZnO
grain of the ceramic acts as if it has a semiconductor junction at the grain boundary. A cross -section of the material is
shown in Figure 2, which illustrates the ceramic microstructure. Varistors are fabricated by forming and sintering Zinc
Oxide-based powders into ceramic parts. These parts are then electroded with either thick film Silver or arc/flame
sprayed metal.

The ZnO grain boundaries can be clearly observed. Since the nonlinear electrical behavior occurs at the boundary of
each semiconducting ZnO grain, the varistor can be considered a "multi -junction" device composed of many series
and parallel connections of grain boundaries. Device behavior may be analyzed with respect to the details of the
ceramic microstructure. Mean grain size and grain size distribution play a major role in electrical behavior.

FIGURE 2. OPTICAL PHOTOMICROGRAPH OF A POLISHED AND ETCHED SECTION OF A VARISTOR

Varistor Microstructure
The bulk of the varistor between contacts is comprised of ZnO grains of an average size "d" as shown in the
schematic model of Figure 3. Resistivity of the ZnO is <0.3 Ω-cm.
FIGURE 3. SCHEMATIC DEPICTION OF THE MICROSTRUCTURE OF A
METAL-OXIDE VARISTOR, GRAINS OF CONDUCTING ZnO (AVERAGE
SIZE d) ARE SEPARATED BY INTERGRANULAR BOUNDARIES.

Designing a varistor for a given nominal varistor voltage, (VN), is basically a matter of selecting the device thickness
such that the appropriate number of grains, (n), are in series between electrodes. In practice, the varistor material is
characterized by a voltage gradient measured across its thickness by a specific volts/mm value. By controlling
composition and manufacturing conditions the gradient remains fixed. Because there are practical limits to the range
of thicknesses achievable, more than one voltage gradient value is desired. By altering the composition of the metal
oxide additives it is possible to change the grain size "d" and achieve the desired result.

A fundamental property of the ZnO varistor is that the voltage drop across a single interface "junction" between grains
is nearly constant. Observations over a range of compositional variations and processing conditions show a fixed
voltage drop of about 2V-3V per grain boundary junction. Also, the voltage drop does not vary for grains of different
sizes. It follows, then, that the varistor voltage will be determined by the thickness of the material and the size of the
ZnO grains. The relationship can be stated very simply as follows:

The varistor voltage, (VN), is defined as the voltage across a varistor at the point on its V-I characteristic where the
transition (v) is complete from the low-level linear region to the highly nonlinear region. For standard measurement
purposes, it is arbitrarily defined as the voltage at a current of 1mA. Some typical values of dimensions for Littelfuse
Varistors are given in Table 1.

TABLE 1.

VARISTOR VOLTAGE AVERAGE GRAIN SIZE GRADIENT DEVICE THICKNESS

n
VOLTS MICRONS V/mm AT 1mA mm
 150V RMS 20 75 150 1.5

25V RMS 80 (Note) 12 39 1.0

NOTE: Low voltage formulation.

Theory of Operation
Because of the polycrystalline nature of metal-oxide semiconductor varistors, the physical operation of the device is
more complex than that of conventional semiconductors. Intensive measurement has determined many of the
device's electrical characteristics, and much effort continues to better define the varistor's operation. However from
the user's viewpoint, this is not nearly as important as understanding the basic electrical properties as they relate to
device construction.

The key to explaining metal-oxide varistor operation lies in understanding the electronic phenomena occurring near
the grain boundaries, or junctions between the Z NO grains. While some of the early theory supposed that electronic
tunneling occurred through an insulating second phase layer at the grain boundaries, varistor operation is probably
better described by a series -parallel arrangement of semiconducting diodes. In this model, the grain boundaries
contain defect states which trap free electrons from the n-type semiconducting ZNO grains, thus forming a space
charge depletion layer in the ZnO grains in the region adjacent to the grain boundaries. (See reference notes on the
last page of this section).

Evidence for depletion layers in the varistor is shown in Figure 4, where the inve rse of the capacitance per boundary
squared is plotted against the applied voltage per boundary. This is the same type of behavior observed carrier
concentration, N, was determined to be about 2 x 1017 per cm 3. In addition, the width of the depletion layer was
calculated to be about 1000 Angstrom units. Single junction studies also support the diode model.

It is these depletion layers that block the free flow of carriers and are responsible for the low voltage insulating
behavior in the leakage region as depicted in Figure 5. The leakage current is due to the free flow of carriers across
the field lowered barrier, and is thermally activated, at least above about 25°C. For semiconductor abrupt P -N
junction diodes. The relationship is:

Where:
(Vb) = barrier voltage,
(V) = applied voltage,
(q) = electron charge,
(es) = semiconductor permittivity and
(N) = carrier concentration.
From this relationship the ZnO carrier concentration, N, was determined to be about 2 x 10 17 per cm 3.

In addition, the width of the depletion layer was calculated to be about 1000 Angstrom units. Single junction studies
also support the diode model.
FIGURE 4. CAPACITANCE-VOLTAGE BEHAVIOR OF VARISTOR RESEMBLES
A SEMICONDUCTOR ABRUPT-JUNCTION REVERSED
BIASED DIODE Nd ˜ 2 x 10 17/cm 3

Figure 5, shows an energy band diagram for a ZnO-grain boundary-ZnO junction. The left-hand grain is forward
biased, VL, and the right side is reverse biased to VR. The depletion layer widths are XL and XR, and the respective
barrier heights are fLand fR. The zero biased barrier height is fO. As the voltage bias is increased, fL is decreased and
fR is increased, leading to a lowering of the barrier and an increase in conduction.

The barrier height fL of a low voltage varistor was measured as a function of applied voltage, and is presented in
Figure 6. The rapid decrease in the barrier at high voltage represents the onset of nonlinear conduction.

FIGURE 5. ENERGY BAND DIAGRAM OF A ZnO-GRAINBOUNDARY-ZnO JUNCTION

FIGURE 6. THERMAL BARRIER vs APPLIED VOLTAGE

Transport mechanisms in the nonlinear region are very complicated and are still the subject of active research. Most
theories draw their inspiration from semiconductor transport theory and is not covered in detail in this document.

Varistor Construction
The process of fabricating a Littelfuse Varistor is illustrated in the flow chart of Figure 7. The starting material may
differ in the composition of the additive oxides, in order to cover the voltage range of product.

FIGURE 7. SCHEMATIC FLOW DIAGRAM OF LITTELFUSE VARISTOR FABRICATION

Device characteristics are determined at the pressing operation. The powder is pressed into a form of predetermined
thickness in order to obtain a desired value of nominal voltage. To obtain the desired ratings of peak current and
energy capability, the electrode area and mass of the device are varied. The range of diameters obtainable in disc
product offerings is listed here:

Nominal Disc
35 710 14 20 32 34 40 62
Diameter-mm

Of course, other shapes, such as rectangles, are also possible by simply changing the press dies. Other ceramic
fabrication techniques can be used to make different shapes. For example, rods or tubes are made by extruding and
cutting to length. After forming, the green (i.e., unfired) parts are placed in a kiln and sintered at peak temperatures in
excess of 1200°C. The B ismuth oxide is molten above 825°C, assisting in the initial densification of the
polycrystalline ceramic. At higher temperatures, grain growth occurs, forming a structure with controlled grain size.

Electroding is accomplished, for radial and chip devices, by means of thick film silver fired onto the ceramic surface.
Wire leads or strap terminals are then soldered in place. A conductive epo xy is used for connecting leads to the axial
3mm discs. For the larger industrial devices (40mm and 60mm diameter discs) the contact material is arc sprayed
Aluminum, with an overspray of Copper if necessary to give a solderable surface.

Many encapsulation techniques are used in the assembly of the various Littelfuse Varistor packages. Most radials
and some industrial devices (HA Series) are epoxy coated in a fluidized bed, whereas epoxy is "spun" onto the axial
device.

Radials are also available with phenolic coatings applied using a wet process. The PA Series package consists of
plastic molded around a 20mm disc subassembly. The RA, DA and DB Series devices are all similar in that they all
are composed of discs or chips, with tabs or leads, encased in a mo lded plastic shell filled with epoxy. Different
package styles allow variation in energy ratings, as well as in mechanical mounting.

TABLE 2. BY-TYPE CERAMIC DIMENSIONS

PACKAGE
SERIES CERAMIC DIMENSIONS
TYPE

Leadless Surface CH, AUML† , ML† , MLE† ,

5mm x 8mm Chip, 0603, 0805, 1206, 1210, 1812, 2220
Mount MLN† Series

Axial Leaded MA Series 3mm Diameter Disc

ZA, LA, C-III, TMOV , ®

Radial Leaded i TMOV ,UltraMOV ,

® ™ 5mm, 7mm, 10mm, 14mm, 20mm Diameter Discs
TMOV25S Series
®

Boxed, Low
RA Series 5mm x 8mm, 10mm x 16mm, 14 x 22 Chips
Profile

BA, BB Series
DA, DB Series
Industrial DHB Series 32mm, 40mm Diameter Disc, 34mm Square Disc, 40mm
Packages HA, HB Series Diameter Disc, 60mm Diameter Disc
HC, HF Series
HG Series
 PACKAGE
SERIES CERAMIC DIMENSIONS
TYPE

Industrial Discs CA Series 60mm Diameter Discs

Figure 9A, 9B and 9C (below) show construction details of some Littelfuse varistor packages. Dimensions of the
ceramic, by package type, are above in Table 2.

FIGURE 9A. CROSS-SECTION OF MA SERIES

FIGURE 9B. CROSS-SECTION OF RADIAL LEAD PACKAGE

FIGURE 9C. PICTORIAL VIEW OF HIGH ENERGY DA, DB AND BA/BB SERIES

Electrical Characterization Varistor V-I Characteristics

Turning now to the high current upturn region in Figure 10, we see that the V-I behavior approaches an ohmic
characteristic. The limiting resistance value depends upon the electrical conductivity of the body of the
semiconducting ZnO grains, which have carrier concentrations in the range of 10 17 to 10 18 per cm 3. This would put the
ZnO resistivity below 0.3Ωcm.

FIGURE 10. TYPICAL VARISTOR V-I CURVE PLOTTED ON LOG-LOG SCALE

Varistor electrical characteristics are conveniently displayed using log -log format in order to show the wide range of
the V-I curve. The log format also is clearer than a linear representation which tend s to exaggerate the nonlinearity in
proportion to the current scale chosen. A typical V-I characteristic curve is shown in Figure 10. This plot shows a
wider range of current than is normally provided on varistor data sheets in order to illustrate three di stinct regions of
electrical operation.

Equivalent Circuit Model

An electrical model for the varistor can be represented by the simplified equivalent circuit of Figure 11.

FIGURE 11. VARISTOR EQUIVALENT CIRCUIT MODEL

Leakage Region of Operation

At low current levels, the V-I Curve approaches a linear (ohmic) relationship and shows a significant temperature
dependence. The varistor is in a high resistance mode (approaching 10 9Ω) and appears as an open circuit. The
nonlinear resistance component (RX) can be ignored because (ROFF) in parallel will predominate. Also, (RON) will be
insignificant compared to (ROFF).

FIGURE 12. EQUIVALENT CIRCUIT AT LOW CURRENTS

For a given varistor device, capacitance remains approximately constant over a wide range of voltage and frequency
in the leakage region. The value of capacitance drops only slightly as voltage is applied to the varistor. As the voltage
approaches the nominal varistor voltage, the capacitance decreases. Capacitance remains nearly constant with
frequency change up to 100 kHz. Similarly, the change with temperature is small, the 25°C value of capacitance
being well with +/-10% from -40°C to +125°C.

The temperature effect of the V-I characteristic curve in the leakage region is shown in Figure 13. A distinct
temperature dependence is noted.

FIGURE 13. TEMPERATURE DEPENDENCE OF THE CHARACTERISTIC CURVE IN THE LEAKAGE REGION

The relation between the leakage current (I) and temperature (T) is

The temperature variation, in effect, corresponds to a change in (ROFF). However, (ROFF) remains at a high resistance
value even at elevated temperatures. For example, it is still in the range of 10MΩ to 100MΩ at 125°C.

Although (ROFF) is a high resistance it varies with frequency. The relationship is approximately linear with inverse
frequency.
If however, the parallel combination of (ROFF) and (°C) is predominantly capacitive at any frequency of interest. This is
because the capacitive reactance also varies approximately linearly with 1/f.

At higher currents, at and above the mA range, temperature variation becomes minimal. The plot of the temperature
coefficient (dV/dT) is given in Figure 14. It should be noted that the temperature coefficient is negative (-) and
decreases as current rises. In the clamping voltage range of the varistor (I > 1A), the temperature dependency
approaches zero.

FIGURE 14. RELATION OF TEMPERATURE COEFFICIENT DV/DT TO VARISTOR CURRENT

Nominal Varistor Region of Operation

The varistor characteristic follows the equation:

I = kVa, where (k) is a constant and the exponent (a) defines the degree of nonlinearity. Alpha is a figure of merit and
can be determined from the slope of the V-I curve or calculated from the formula:

In this region the varistor is conducting and RX will predominate over C, RON and ROFF. RX becomes many orders of
magnitude less than R OFF but remains larger than R ON.
FIGURE 15. EQUIVALENT CIRCUIT AT VARISTOR CONDUCTION

During conduction the varistor voltage remains relatively constant for a change in current of several orders of
magnitude. In effect, the device resistance, RX, is changing in response to current. This can be observed by
examining the static or dynamic res istance as a function of current. The static resistance is defined by:

Plots of typical resistance values vs current (I) are given in Figure 16A and 16B.

FIGURE 16A. RX STATIC VARISTOR RESISTANCE FIGURE

FIGURE 16B. ZX DYNAMIC VARISTOR RESISTANCE

Upturn Region of Operation

At high currents, approaching the maximum rating, the varistor approximates a short-circuit. The curve departs from
the nonlinear relation and approaches the value of the material bulk resistance, about 1Ω -10Ω. The upturn takes
place as RXapproaches the value of RON. Resistor R ON represents the bulk resistance of the ZNO grains. This
resistance is linear (which appears as a steeper slope on the log plot) and occurs at currents 50A to 50,000A,
depending on the varistor size.

FIGURE 17. EQUIVALENT CIRCUIT AT VARISTOR UPTURN

Speed of Response and Rate Effects

The varistor action depends on a conduction mechanism similar to that of other semiconductor devices. For this
reason, conduction occurs very rapidly, with no apparent time lag – even into the nanosecond (ns) range. Figure 18,
shows a composite photograph of two voltage traces with and without a varistor inserted in a very low inductance
impulse generator. The second trace (which is not synchronized with the first, but merely superimposed on the
oscilloscope screen) shows that the voltage clamping effect of the varisto r occurs in less than 1.0 ns.

FIGURE 18. RESPONSE OF A ZnO VARISTOR TO A FAST RISE TIME (500ps) PULSE

In the conventional lead–mounted devices, the inductance of the leads would completely mask the fast action of the
varistor; therefore, the test circuit for Figure 18, required insertion of a small piece of varistor material in a coaxial line
to demonstrate the intrinsic varistor response.

Tests made on lead– mounted devices, even with careful attention to minimizing lead length, show that the voltages
induced in the loop formed by the leads contribute a substantial part of the voltage appearing across the terminals of
a varistor at high current and fast current rise. Fortunately, the currents which can be delivered by a transient source
are invariably slower in rise time than the observed voltage transients. The applications most frequently encountered
for varistors involve current rise times longer than 0.5μs.

Voltage rate-of-rise is not the best term to use when discussing the response of a varistor to a fast impulse (unlike
spark gaps where a finite time is involved in switching from nonconducting to conducting state). The response time of
the varistor to the transient current that a circuit can deliver is the appropriate characteristic to consider.

The V-I characteristic of Figure 19A, shows how the response of the varistor is affected by the current waveform.
From such data, an "overshoot" effect can be defined as being the relative increase in the maximum voltage
appearing across the varistor during a fast current rise, using the conventional 8/20μs current wave as the reference.
Figure 19B, shows typical clamping voltage variation with rise time for various current levels.

FIGURE 19. RESPONSE OF LEAD-MOUNTED VARISTORS TO CURRENT WAVEFORM

FIGURE 19A. V-I CHARACTERISTICS FOR VARIOUS CURRENT RISE TIMES

FIGURE 19B. OVERSHOOT DEFINED WITH REFERENCE TO THE BASIC 8/20?s CURRENT PULSE

How to Connect a Littelfuse Varistor

Transient suppressors can be exposed to high currents for short durations in the na noseconds to millisecond time
frame.

Littelfuse Varistors are connected in parallel to the load, and any voltage drop in the leads to the varistor will reduce
its effectiveness. Best results are obtained by using short leads that are close together to redu ce induced voltages
and a low ohmic resistance to reduce I • R drops.
Single Phase

FIGURE 23.

This is the most complete protection one can select, but in many cases only Varistor 1 or Varistor 1 and 2 are
selected.

FIGURE 24.

Three Phase

FIGURE 25A. 3 PHASE 220V/380V, UNGROUNDED

FIGURE 25B. 3 PHASE 220V OR 380V, UNGROUNDED

FIGURE 25C. 3 PHASE 220V, ONE PHASE GROUNDED

FIGURE 25D. 3 PHASE 220V

FIGURE 25E. 3 PHASE 120V/208V, 4-WIRE

FIGURE 25F. 3 PHASE 240V/415V

For higher voltages use same connections, but select varistors for the appropriate voltage rating.
DC Application

DC applications require connection between plus and minus or plus and ground and minus and ground.

For example, if a transient towards ground exists on all 3 phases (common mode transients) only transient
suppressors connected phase to ground would absorb energy. Transient suppressors connected phase to phase
would not be effective.

FIGURE 26. COMMON MODE TRANSIENT AND CORRECT SOLUTION

On the other hand if a differential mode of transient (phase to phase) exists then transient suppressors connected
phase to phase would be the correct solution.

FIGURE 27. DIFFERENTIAL MODE TRANSIENT AND CORRECT SOLUTION

This is just a selection of some of the more important variations in connecting transient suppressors.

The logical approach is to connect the transient suppressor between the points of the potential difference created by
the transient.The suppressor will then equalize or reduce these potentials to lower and har mless levels.

Varistor Terms and Definitions

Definitions (IEEE Standard C62.33, 1982)

A characteristic is an inherent and measurable property of a device. Such a property may be electrical, mechanical,
or thermal, and can be expressed as a value for stated conditions.

A rating is a value which establishes either a limiting capability or a limiting condition (either maximum or minimum)
for operation of a device. It is determined for specified values of environment and operation. The ratings indicate a
level of stress which may be applied to the device without causing degradation or failure. Varistor symbols are
defined on the linear V-I graph illustrated in Figure 20.

FIGURE 20. I-V GRAPH ILLUSTRATING SYMBOLS AND DEFINITIONS

Voltage Clamping Device

A clamping device, such as an MOV, refers to a characteristic in which the effective resistance changes from a high
to low state as a function of applied voltage. In its conductive state, a voltage divider action is established between
the clamping device and the source impedance of the circuit. Clamping devices are generally "dissipative" devices,
converting much of the transient electrical energy to heat.

Choosing the most appropriate suppressor depends upon a balance between the application, its operation, voltage
transient threats expected and sensitivity levels of the components requiring protection. Form factor/package style
also must be considered.

Test Waveform
At high current and energy levels, varistor characteristics are measured, of necessity, with an impulse waveform.
Shown in Figure 21, is the ANSI Standard C62.1 waveshape, an exponentially decaying waveform representative of
lightning surges and the discharge of stored energy in reactive circuits.

The 8/20μs current wave (8μs rise and 20μs to 50% decay of peak value) is used as a standard, based on industry
practices, for the characteristics and ratings described. One exception is the energy rating (W TM), where a longer
waveform of 10/1000μs is used. This condition is more representative of the hi gh energy surges usually experienced
from inductive discharge of motors and transformers. Varistors are rated for a maximum pulse energy surge that
results in a varistor voltage (VN) shift of less than +/-10% from initial value.

FIGURE 21. DEFINITION OF PULSE CURRENT WAVEFORM

Power Dissipation Ratings

When transients occur in rapid succession the average power dissipation is the energy W TM (watt-seconds) per pulse
times the number of pulses per second. The power so developed must be within the specifica tions shown in the
Device Ratings and Characteristics Table for the specific device. Certain parameters must be derated at high
temperatures.

FIGURE 22. DEVICE RATINGS AND CHARACTERISTICS

TABLE 3. VARISTOR CHARACTERISTICS(IEEE STANDARD C62.33-1982 SUBSECTION 2.3 AND 2.4)

Terms and Descriptions Symbol

Clamping Voltage. Peak voltage across the varistor measured under conditions of a specified
peak V C pulse current and specified waveform. NOTE: Peak voltage and peak currents are not VC
necessarily coincidental in time.

Rated Peak Single Pulse Transient Currents (Varistor). Maximum peak current which may be
applied for a single 8/20μs impulse, with rated line voltage also applied, without causing device ITM
failure.

Lifetime Rated Pulse Currents (Varistor). Derated values of I TM for impulse durations exceeding
that of an 8/20μs waveshape, and for multiple pulses which may be applied over device rated -
lifetime.

Rated RMS Voltage (Varistor). Maximum continuous sinusoidal RMS voltage which may be
V M(AC)
applied.

Rated DC Voltage (Varistor). Maximum continuous DC voltage which may be applied. V M(DC)

DC Standby Current (Varistor). Varistor current measured at rated voltage, V M(DC). ID

For certain applications, some of the following terms may be useful.

Nominal Varistor Voltage. Voltage across the varistor measured at a specified pulsed DC
current, IN(DC), of specific duration. I N(DC) of specific duration. I N(DC) is specified by the varistor V N(DC)
manufacturer.

Peak Nominal Varistor Voltage. Voltage across the varistor measured at a specified peak AC
V N(AC)
current, IN(AC), of specific duration. I N(AC) is specified by the varistor manufacturer.

Rated Recurrent Peak Voltage (Varistor). Maximum recurrent peak voltage which may be
V PM
applied for a specified duty cycle and waveform.

Rated Single Pulse Transient Energy (Varistor). Energy which may be dissipated for a single
impulse of maximum rated current at a specified waveshape, with rated RMS voltage or rated WTM
DC voltage also applied, without causing device failure.

Rated Transient Average Power Dissipation (Varistor). Maximum average power which may be
dissipated due to a group of pulses occurring within a specified isolated time period, without
causing device failure.

Varistor Voltage. Voltage across the varistor measured at a given current, IX. VX
Terms and Descriptions Symbol

Voltage Clamping Ratio (Varistor). A figure of merit measure of the varistor clamping
effectiveness as defined by the symbols V C/V PM
(V C) ÷ (V M(AC)), (V C) ÷ (V M(DC)).

Nonlinear Exponent. A measure of varistor nonlinearity between two given operating currents,
I1 and I2, as described by I = kV where k is a device constant, I 1≤ I ≤ I2, and a12 = ( logI2 / I1 ) ÷ (
a a
logV 2 / V 1 )

Dynamic Impedance (Varistor). A measure of small signal impedance at a given operating point
as defined by: ZX
ZX = ( dV X ) ÷ ( dIX )

Resistance (Varistor). Static resistance of the varistor at a given operating point as defined by:
RX
RX = ( V X ) ÷ ( IX )

Capacitance (Varistor). Capacitance between the two terminals of the varistor measured at C
C
specified frequency and bias.

AC Standby Power (Varistor). Varistor AC power dissipation measured at rated RMS voltage
PD
V M(AC).

Voltage Overshoot (Varistor). The excess voltage above the clamping voltage of the device for a
given current that occurs when current waves of less than 8μs virtual front duration are applied. V OS
This value may be expressed as a % of the clamping voltage (V C) for an 8/20 current wave.

Response Time (Varistor). The time between the point at which the wave exceeds the clamping
voltage level (V C) and the peak of the voltage overshoot. For the purpose of this definition,
-
clamping voltage as defined with an 8/20μs current waveform of the same peak current
amplitude as the waveform used for this response time.

Overshoot Duration (Varistor). The time between the point voltage level (VC) and the point at
which the voltage overshoot has decayed to 50% of its peak. For the purpose of this definition,
-
clamping voltage is defined with an 8/20μs current waveform of the same peak current
amplitude as the waveform used for this overshoot duration.

Varistor Selection Table

Surface Mount MLVs

Series MHS MLE MLA MLN AUML CH

Multilayer Zinc Zinc

Technology Type Ceramic
Oxide Oxide

Operating AC Voltage
9-42 18 2.7 - 107 18 ––––– 14-275
Range
 Surface Mount MLVs

Operating DC Voltage 30 -
18 5.5 - 120 5.5 - 18 18 18-369
Range 135

Peak Current 22 - 250-

300 4 - 500 30 20
Range (A)** 28 500

Peak Energy 0.02 - 0.05 -

––––– 1-23
Range (J) 2.5 0.10

Temperature
-55 to +125°C
Range (Deg°C)

Lines Protected 1 4 1

Mount/Form Factor Surface Mount

Disc Size (MOV) (Not Applicable)

Agency Approvals ––––– ––––– ––––– ––––– ––––– UL

RoHS Compliant Refer to Datasheets

Lead-free Refer to Datasheets

* Not an applicable parameter for this technology

** Not an applicable parameter for Crowbar devices

Radial Leaded MOVs

Ultra
TMOV Ultra
Series TMOViTMOV MOV C-III LA ZA
25S MOV
25S

Technology Zinc
Type Oxide

Operating AC
115-750 115-750 130-625 115-750 130-660 130-1000 4-460
Voltage Range

Operating DC 5.5-
––––– ––––– 170-825 150-970 ––––– 175-1200
Voltage Range 615

Peak Current 1750- 3500- 1200- 50-

6000-10000 20000 22000
Range (A)** 10000 9000 6500 6500

Peak Energy 170 -

35-480 12.5-720 230-890 40-530 11-360 0.1-52
Range (J) 670

Temperature
-55 to +85°C
Range (Deg°C)
 Radial Leaded MOVs

Lines
1
Protected

Mount/Form
Radial Leaded
Factor

5, 7,
7, 10, 14, 10, 14, 7, 10, 14, 10,
Disc Size 14, 20 mm 25 mm 25 mm
20 mm 20 mm 20 mm 14, 20
(MOV) round square square
round round round mm
round

UL,CSA, UL,CSA, UL,CSA,

Agency UL,CSA, UL UL,CSA, UL,
VDE, VDE, VDE,
Approvals VDE, CECC Pending VDE VDE
CECC CECC CECC

RoHS
Refer to Datasheets
Compliant

Lead-free Refer to Datasheet

* Not an applicable parameter for this technology
** Not an applicable parameter for Crowbar devices

Industrial High Energy MOVs

TMOV
Series BA/BB DA/DB HA HB34 HG34HF34 DHB34 CA
34S

Technology
Zinc Oxide
Type

Operating AC 130- 115- 250- 250-

130-750 130-750 130-750
Voltage Range 2800 750 2800 2800

Operating DC 175- 330- 330-

175-970 175-970 ––––– 175-970
Voltage Range 3500 3,500 3,500

Peak Current 50000 25000 20000 20000

40000 40000 40000
Range (A)** 70000 40000 70000 70000

Peak Energy 450- 270- 200- 235- 330- 330-

270-1050
Range (J) 10000 1050 1050 1050 10000 10000

Temperature
-55 to +85°C
Range (Deg. C)

Lines Protected 1
 Industrial High Energy MOVs

Mount/Form Screw / Clip Bare

Indusrial Packaged Radial Leads
Factor Terminals Disc

32, 40
60 mm 40 mm 60 mm
Disc Size (MOV) mm 34 mm square
round round round
round

Agency UL &
UL UL UL UL & CSA ––––– –––––
Approvals CSA

RoHS Compliant No No No Yes No Yes Yes

Lead-free No No No Yes No No No
* Not an applicable parameter for this technology
** Not an applicable parameter for Crowbar devices

Special MOVs

Series MA RA High Reliability

Technology Type Zinc Oxide

Operating AC Voltage Range 9-264 4-275 130-510

Operating DC Voltage Range 13-365 5.5-369 4-675

Peak Current Range (A)** 40-100 100-6500 100-6500

Peak Energy Range (J) 0.06-1.7 0.4-160 0.4-190

Temperature Range (Deg. C) -55 to +85°C

Lines Protected 1

Mount/Form Factor Axial Leaded Inline Radial Leads (Varies)

Disc Size (MOV) Not Applicable (Varies)

Agency Approvals ––––– UL, CSA MIL, QPL, CECC, CSA

RoHS Compliant Yes Yes No

Lead-free Yes Yes No

* Not an applicable parameter for this technology
** Not an applicable parameter for Crowbar devices

The following displays a list of example end applications where Littelfuse Varistor products are typically used. Most
device specifications are available in both surface mount and through -hole packages to serve a wide range of needs.
Please consult with your local authorized Littelfuse product representative for insight and assistance in determining
the specific devices that may serve your application.

TYPICAL SURFACE
MARKET DEVICE FAMILY
APPLICATIONS AND TECH MOUNT
SEGMENT OR SERIES
CIRCUIT EXAMPLES PRODUCTS
Low  Hand-  Controllers CH MOV √
Voltage, Held/Portable  Instrumentation MA, ZA, RA MOV
Board Devices  Remote
Level  EDP Sensors
Products Computer  M edical
ML, MLE, MLN, MHS MLV √
 I/O Port and Electronics,
Interfaces Etc.

AC Line, UPS  Power M eters TMOV ®

TVSS  AC Panels  Power Supplies UltraMOV C-111, LA

™

Products 
AC Power Taps Circuit HA, HB34
MOV
 TVSS Devices Breakers HG34, HF34
 AC  Consumer DHB34, TMOV34S ®

Appliance/Controls Electronics RA
CH MOV √

Automotive ABS CH MOV √

Electronics EEC  Body ZA MOV
 Instrument Center Controllers
 Air Bag  M ultiplex Bus AUML, ML
  EFI
Window Control/ MLE, MLN MLV √
Wiper M odules MHS

Telecom Cellular/Cordless CH MOV √

Products Phone ZA MOV
 Repeaters
 M odems
 Line Cards
 Secondary Phone
 COE
Line Protectors

ML, MLE
T1/E1/ISDN MLV √
 Data Line MLN, MHS
Connectors

Industrial High Current

DA, DB
High Relays  Roboticst
BA, BB
Energy AC Solenoids  Large M otors
CA, HA
Products M otor Drives  Pumps MOV
HB34, HC
 AC Distrbution Compressors
HG34, HF34, DHB34
Panels
TMOV34S ®
Varistor Selection Guide

Step 1. Determine the circuit's operating parameters.

(complete as much of the following information as possib le).

1-a. Source and path of the transient

________ Source ________ Path

1-b. Normal operating voltage of protected device

________ (VAC) , or ________ (V)RMS DC

1-c. Tolerance of normal operating voltage (1-b)

________ (V) or ________ Unknown

1-d. Max. allowable voltage of protected device

________ (VAC) or ________ (V)RMS DC

1-e. Maximum expected surge current and number of hits

(Specify 8x20μs waveform equivalent of surge current)
________ (A) ________ (# of hits)

1-f. Maximum energy applied to device in surge event

________ (Joules) (E=1.4xVxIxT)

1-g. Maximum power applied to device in surge event

________ (W) (P=VxI)

1-h. Maximum allowable varistor capacitance (@1kHz; 0V DC bias)

(This is the maximum capacitance of the varistor device that will not impair the functional ity of the circuit)
________ (pF)

1-i. Required safety standards

(Name of standards required, such as UL, CSA, VDE, etc.)

Step 2. Calculate voltage value.

2-a. The required varistor voltage value should be equal to:
the operating voltage of the protected
equipment or device*
+
the tolerance of the operating voltage.

If the tolerance is not known, multiply the operating voltage of

protected equipment or device b y 1.10 to 1.25 (i.e. 10–25% ab ove
operating voltage value).

If the operating voltage is in AC (VRMS) convert to VDC.

____ Operating voltage AC (V) x 1.414 =______________________

Operating voltage (V)RMS DC
________Operating voltage of equipment or device (VDC)
+
_________Tolerance (V) = _____________________
Required varistor voltage (V)
- or -
____Operating voltage of equipment or device (VDC)
x
(1.10 to 1.25) = _____________ Required varistor voltage (V)

Step 3. Guidelines for Selecting a Varistor

If a response to one of the requirements below is "False," refer to appropriate corrective action notes (A-F) at bottom
of list:
3-a. Varistor voltage value - Tolerance of varistor ≥ Required varistor voltage value (2- ______True ______False
a) (A)
3-b. Varistor maximum clamping voltage value Maximum allowable voltage of protected equipment or device (1-d)
(Max. current should b e less than or equal to the current at which maximum clamping voltage is measured).
______True ______False
(B)
______True ______False
3-c. Varistor maximum peak current value Maximum expected surge cu rrent (1-e)
(C)
Note: If surge current waveform is not 8 x 20μ s, use Pulse Lifetime Ratings curves.
______True ______False
3-d. Varistor maximum energy rating Maximum energy applied to system (1 -f)
(D)
3-e. Varistor maximum rated power Maximum power applied to system (1-g) ______True ______False (E)
3-f. Varistor capacitance Maximum allowable system capacitance (1 -h) ______True ______False (F)

Corrective action notes:

A. Select next varistor on the list (i.e. next varistor with increasing varistor voltage value) and then re-verify 3-a.
B. Select previous varistor on the list (i.e. previous varistor with decreasing varistor voltage value) and then re -verify
3-b .
C. Select next varistor diameter level and then re-verify 3-c.*
D. Select next varistor diameter level and then re-verify 3-d.*
E. Select next varistor diameter level and then re-verify 3-e.*
F. Select lower varistor diameter level and then re-verify 3-c, 3-d, 3-e and 3-f.*
* If varistor voltage is b elow 82V, selecting an 82V ROV may b e preferab le over a higher diameter part.

Step 4. Verify the following system conditions.

4-a. Leakage current of the selected varistor is appropriate for the circuit ______ True ______False
4-b. Verify the performance of the varistor under fault conditions ______ Verified

Users should Independently evaluate the suitability of, and test each MOV device in their application for safety and
suitability with the end application.