2N5088 / MMBT5088 / 2N5089 / MMBT5089

2N5088 MMBT5088
2N5089 MMBT5089

E
C TO-92
B SOT-23 B
E
Mark: 1Q / 1R

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 2N5088 30 V
2N5089 25 V
VCBO Collector-Base Voltage 2N5088 35 V
2N5089 30 V
VEBO Emitter-Base Voltage 4.5 V
IC Collector Current - Continuous 100 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5088 *MMBT5088
2N5089 *MMBT5089
PD Total Device Dissipation 625 350 mW
Derate above 25°C 5.0 2.8 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088/MMBT5089, Rev A

 2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 5088 30 V
Voltage* 5089 25 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 5088 35 V
5089 30 V
ICBO Collector Cutoff Current VCB = 20 V, IE = 0 5088 50 nA
VCB = 15 V, IE = 0 5089 50 nA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA
VEB = 4.5 V, IC = 0 100 nA

ON CHARACTERISTICS
hFE DC Current Gain IC = 100 µA, VCE = 5.0 V 5088 300 900
5089 400 1200
IC = 1.0 mA, VCE = 5.0 V 5088 350
5089 450
IC = 10 mA, VCE = 5.0 V* 5088 300
5089 400
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V
VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = 500 µA,VCE = 5.0 mA, 50 MHz

Ccb Collector-Base Capacitance

f = 20 MHz
VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF
3
Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, f = 100 kHz 10 pF
hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 5.0 V, 5088 350 1400
f = 1.0 kHz 5089 450 1800
NF Noise Figure IC = 100 µA, VCE = 5.0 V, 5088 3.0 dB
RS = 10 kΩ, 5089 2.0 dB
f = 10 Hz to 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10)
 2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

VCESAT - COLLECTOR-EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
h FE - TYPICAL PULSED CURRENT GAIN

1200 0.3
V CE = 5.0 V
125 °C
1000 0.25
β = 10
800 0.2
125 °C
600 0.15
25 °C
400 25 °C
0.1
- 40 °C
200 - 40 °C
0.05
0
0.01 0.03 0.1 0.3 1 3 10 30 100 0.1 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base-Emitter ON Voltage vs

VBESAT - COLLECTOR-EMITTER VOLTAGE (V)

Voltage vs Collector Current Collector Current

VBEON- BASE-EMITTER ON VOLTAGE (V)

1 1
- 40 °C
0.8 - 40 °C
0.8
25 °C

0.6 25 °C
0.6
125 °C 125 °C

0.4 0.4
β = 10
V CE = 5.0 V
0.2 0.2

0.1 1 10 100 0.1 1 10 40

I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current
vs Ambient Temperature
I CBO - COLLE CTOR CURRENT (nA)

10
VCB = 45V

0.1
25 50 75 100 125 150
T A - AMBIE NT TEMP ERATURE ( ° C)
 2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Input and Output Capacitance Contours of Constant Gain

vs Reverse Bias Voltage Bandwidth Product (f T )
5 10

V CE - COLLECTOR VOLTAGE (V)

f = 1.0 MHz
7 175 MHz
4
CAPACITANCE (pF)

5
3
C te
3 150 MHz
2
2 125 MHz
1 C ob 100 MHz
75 MHz

0 1
0 4 8 12 16 20 0.1 1 10 100
REVERSE BIAS VOLTAGE (V) I C - COLLECTOR CURRENT (mA)

Normalized Collector-Cutoff Current Wideband Noise Frequency

CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C

vs Ambient Temperature vs Source Resistance

°

1000 5
V CE = 5.0 V
NF - NOISE FIGURE (dB)

4 BANDWIDTH = 15.7 kHz

100
3
I C = 100 µA
3
I C = 30 µA
2
10

1
I C = 10 µA
1 0
25 50 75 100 125 150 1,000 2,000 5,000 10,000 20,000 50,000 100,000
T A - AMBIE NT TEMPERATURE ( °C) R S - SOURCE RESISTANCE (Ω )

Noise Figure vs Frequency Power Dissipation vs

10 Ambient Temperature
I C = 200 µA, 625
P D - POWER DISSIPATION (mW)

R S = 10 kΩ TO-92
NF - NOISE FIGURE (dB)

8
I C = 100 µA, 500
R S = 10 kΩ
6 SOT-23
I C = 1.0 mA, 375
R S = 500 Ω
4 250
I C = 1.0 mA,
R S = 5.0 kΩ
2 125
V CE = 5.0V

0 0
0.0001 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150
f - FREQUENCY (MHz) TEMPERATURE ( o C)
 2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Contours of Constant Contours of Constant

Narrow Band Noise Figure Narrow Band Noise Figure
10,000 10,000

R S - SOURCE RESISTANCE ( Ω )
R S - SOURCE RESISTANCE ( Ω )

3.0 dB
5,000 5,000
4.0 dB
2.0 dB
2,000 2,000

6.0 dB 3.0 dB
1,000 1,000
4.0 dB
8.0 dB
500 V CE = 5.0 V 500
10 dB V CE = 5.0 V 6.0 dB
f = 100 Hz f = 1.0 kHz
BANDWIDTH BANDWIDTH 8.0 dB
200 12 dB 200
= 20 Hz = 200 Hz
14 dB
100 100
1 10 100 1,000 1 10 100 1,000
I C - COLLECTOR CURRENT ( µ A) I C- COLLECTOR CURRENT ( µ A)

Contours of Constant Contours of Constant

Narrow Band Noise Figure Narrow Band Noise Figure
10000 10000
R S - SOURCE RESISTANCE (Ω )

R S - SOURCE RESISTANCE (Ω )

5000 5000
1.0 dB

2000 2.0 dB 2000 2.0 dB

3.0 dB
1000 1000 3.0 dB
4.0 dB
500 VCE = 4.0 dB
V CE = 5.0V 500 5.0
6.0 dB 5.0V dB
f = 10kHz f = 1.0 MHz 6.0
200 BANDWIDTH 200 BANDWIDTH dB
8.0 dB 7.0 dB
= 2.0kHz = 200kHz 8.0 dB
100 100
1 10 100 1000 0.01 0.1 1 10
I C - COLLECTOR CURRENT ( µ A) I C - COLLECTOR CURRENT ( µ A)
 2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)

Typical Common Emitter Characteristics (f = 1.0 kHz)

Typical Common Emitter Characteristics Typical Common Emitter Characteristics

CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25°C)

CHAR ACTER ISTI CS RELATI VE TO VALUE(VCE =5V)

1.4 1.5
h fe 1.4 h ie
1.3 VCE = 5.0V h re
1.3 f = 1.0kHz
h ie h fe
h oe 1.2 I C = 1.0mA
1.2 h oe
h re 1.1
1.1 1
h oe
h re 0.9
1 h ie h oe
0.8
I C = 1.0mA
0.7 h fe
0.9 f = 1.0kHz
h fe h re h ie
T A = 25°C 0.6
0.8 0.5
0 5 10 15 20 25 -100 -50 0 50 100 150
V CE - COLLECTOR VOLTAGE (V) T J - JUNCTIO N TEMP ERATURE (° C)

Typical Common Emitter Characteristics

CHARACTERISTICS RELATIVE TO VALUE(I C =1mA)

100

f = 1.0kHz h oe

10
h ie and h re
h re

1 h oe 3
h fe
h ie h fe
0.1

0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
I C - COLLECTOR CURRENT (mA)
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G
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