UNISONIC TECHNOLOGIES CO.

, LTD
UF1010E Power MOSFET

N-CHANNEL POWER MOSFET

„ DESCRIPTION
Using high technology of UTC, UTC UF1010E has the
features such as: low RDS(ON), fast switching, and low gate charge.
Like features of all power MOSFET devices’ features, UTC
UF1010E can satisfy almost all the requirements of high efficient
device form customers.
„ FEATURES
* RDS(ON)<12 mΩ @VGS=10V
* Ultra low gate charge :130 nC
* Low CRSS = 140 pF(typ. )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
* High ruggedness
„ SYMBOL

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
UF1010EL-TA3-T UF1010EG-TA3-T TO-220 G D S Tube
UF1010EL-TF1-T UF1010EG-TF1-T TO-220F1 G D S Tube
UF1010EL-TF2-T UF1010EG-TF2-T TO-220F2 G D S Tube

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UF1010E Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Gate to Source Voltage VGSS ±20 V
Continuous (VGS=10V) ID 84
Drain Current A
Pulsed (Note 2) IDM 330
Avalanche Current (Note 2) IAR 50 A
Repetitive (Note 2) EAR 17 mJ
Avalanche Energy
Single Pulsed (Note3) EAS 1180 mJ
Power Dissipation TO-220 200
PD W
(TC=25°C) TO-220F1/ TO-220F2 54
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. TJ=25°C, L=260μH, RG=25Ω, IAS=50A

„ THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220 62
Junction to Ambient θJA °C/W
TO-220F1/ TO-220F2 62.5
TO-220 0.75
Junction to Case θJc °C/W
TO-220F1/ TO-220F2 2.3

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UF1010E Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=250 μA 60 V
VDS=60 V,VGS=0 V 25 μA
Drain-Source Leakage Current IDSS
VDS=48 V,VGS=0 V,TJ=150°C 250 μA
Gate-Source Leakage Current IGSS VGS=±20 V, VDS=0 V ±100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=1mA 0.064 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250 μA 2.0 4.0 V
Static Drain-Source On Resistance(Note) RDS(ON) VGS=10 V, ID=50 A 12 mΩ
DYNAMIC PARAMETERS
Input Capacitance CISS 3210 pF
Output Capacitance COSS VDS=25 V, VGS=0 V,f=1MHz 690 pF
Reverse Transfer Capacitance CRSS 140 pF
SWITCHING PARAMETERS
Total Gate Charge QG 130 nC
Gate-to-Source Charge QGS ID =50A,VDS =48V,VGS =10V 28 nC
Gate-to-Drain ("Miller") Charge QGD 44 nC
Turn ON Delay Time tD(ON) 12 ns
Turn ON Rise Time tR VDD =30V,ID =50A,RG =3.6Ω 78 ns
Turn OFF Delay Time tD(OFF) VGS = 10V 48 ns
Turn OFF Fall Time tF 53 ns
Internal Drain Inductance LD 4.5 nH
Internal Source Inductance LS 7.5 nH
Diode Forward Voltage VSD TJ = 25°C, IS = 50A,VGS = 0V 1.3 V
Maximum Continuous Drain-Source Diode
IS 84 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 330 A
Forward Current
Reverse Recovery Time trr TJ=25°C,IF=50A, 73 110 ns
Reverse Recovery Charge QRR di/dt=100A/μs 220 330 nC
Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.

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UF1010E Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS

Switching Time Test Circuit Switching Time Waveforms

VGS VDS
VDS
RD
90％

RG DUT +
VDD
-

10％
VGS=10V VGS

td(on) tR tD(off) tF
Pulse Width≤1µs Duty Cycle≤0.1％

Unclamped Inductive Test Circuit Unclamped Inductive Waveforms

VGS VDS
L 15V V(BR)DSS
tP
Driver

RG DUT

VDD +
0V -
IAS
VGS =10V
tP 0.01Ω
IAS

Gate Charge Test Circuit Basic Gate Charge Waveform

VG
2µF
50KΩ
12V + QG
-
10V
3µF +
VDS QGS QGD
-
VGS
D.U.T

IG(REF)=3mA

IG ID Charge

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UF1010E Power MOSFET

„ TYPICAL CHARACTERISTICS

Drain Current vs. Source to Drain Voltage Drain-Source On-State Resistance Characteristics
10 24

8 20
Drain Current,ID (A)

VGS=10V,

Drain Current, ID (A)

Id=20A
16
6
12
4
8

2 4

0 0
0 200 400 600 800 1000 0 0.1 0.2 0.3 0.4
Source to Drain Voltage,VSD (mV) Drain to Source Voltage, VDS (V)
Drain Current,ID (µA)

Drain Current,ID (µA)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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