Epitaxy refers to a type of crystal growth or material deposition in
which new crystalline layers are formed with a well-defined
orientation with respect to the crystalline substrate. The new layers
formed are called the epitaxial film or epitaxial layer. The relative
orientation of the epitaxial layer to the crystalline substrate is defined
in terms of the orientation of the crystal lattice of each material. For
epitaxial growth, the new layer will be crystalline and will all have a
single orientation relative to the substrate; amorphous growth or
multicrystalline growth with random crystal orientation does not meet
this criterion.
Crystallization
Fundamentals
Crystal · Crystal
structure · Nucleation
Concepts
Crystallization · Crystal growth
Recrystallization · Seed crystal
Protocrystalline · Single crystal
Methods and technology
Boules
Bridgman–Stockbarger method
Crystal bar process
Czochralski method
Epitaxy · Flux method
Fractional crystallization
Fractional freezing
Hydrothermal synthesis
Kyropoulos method
Laser-heated pedestal growth
Micro-pulling-down
Shaping processes in crystal
growth
Skull crucible
Verneuil method
Zone melting
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t
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The term epitaxy comes from the Greek roots epi (ἐπί), meaning
"above", and taxis (τάξις), meaning "an ordered manner".
One of the main commercial applications of epitaxial growth is in the
semiconductor industry, where semiconductor films are grown
epitaxially on semiconductor substrate wafers.[1] For the case of
epitaxial growth of a planar film atop a substrate wafer, the epitaxial
film's lattice will have a specific orientation relative to the substrate
wafer's crystalline lattice such as the [001] Miller index of the film
aligning with the [001] index of the substrate. In the simplest case, the
epitaxial layer can be a continuation of the same exact semiconductor
compound as the substrate; this is referred to as homoepitaxy.
Otherwise, the epitaxial layer will be composed of a different
compound; this is referred to as heteroepitaxy.