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Assignment For Tut-2

The document summarizes a five parameter model equivalent circuit of a practical photovoltaic (PV) cell. The circuit includes a current source (IL) representing light-generated current, a diode, a shunt resistor (Rsh) accounting for leakage current, and a series resistor (Rs) for internal voltage drops and losses. The governing equation for the circuit is derived using Kirchhoff's current law, modeling the diode current (ID) using the Shockley equation and writing the shunt current (Ish) as a function of voltage and Rs.

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0% found this document useful (0 votes)
36 views

Assignment For Tut-2

The document summarizes a five parameter model equivalent circuit of a practical photovoltaic (PV) cell. The circuit includes a current source (IL) representing light-generated current, a diode, a shunt resistor (Rsh) accounting for leakage current, and a series resistor (Rs) for internal voltage drops and losses. The governing equation for the circuit is derived using Kirchhoff's current law, modeling the diode current (ID) using the Shockley equation and writing the shunt current (Ish) as a function of voltage and Rs.

Uploaded by

sarthak
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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Assignment for Tut-2 students.

(31/03/2020
3.00 - 4.00 PM) - SOLUTION
Fig 1 is an equivalent circuit of a practical PV cell. In many pieces of literature, it
is also termed as a five parameter model. It takes into account the different
properties of a solar cell as:

● R S is introduced to consider the voltage drops and internal losses due to the
flow of current.
● R sh takes into account the leakage current to the ground when the diode is in
reverse biased.

Fig 1
The governing equation for this equivalent circuit is formulated using Kirchoff’s
current law for current I .
I =I L −I D −I SH

Here, I L represents the light-generated current in the cell, I D represents the voltage-
dependent current lost to recombination, I SH and represents the current loss due to
shunt resistances. In this single diode model, I Dis modeled using the Shockley
equation for an ideal diode:
I D =I o [e(V + I R )/ n V −1]
s s T

Where n is the diode ideality factor, I o is saturation current and V T is the thermal
voltage is given by
V T =(k T c )/q

Where k is Boltzman’s constant and q is the elementary charge.


Writing the shunt current as I sh=(V + I Rs )/ Rsh and combining it we get
I D =I L −I o [e(V + I R )/n V −1]−(V + I R S )/ R p
s s T

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