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Activity No. 2 Computer Architecture ICS 222 (LAB) : Submitted by

This document provides information about a computer architecture activity, including details about different types of memory units like RAM and ROM. It summarizes the key characteristics of various RAM types like SRAM, DRAM, SDRAM, RDRAM, and VRAM. It also outlines the differences between various ROM types such as ROM, PROM, EPROM, EEPROM, and flash memory. Finally, it shares the results from a PC Wizard test, detailing specifications of the memory modules and memory controller.

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Jasmine Mycarl Manangan
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50 views

Activity No. 2 Computer Architecture ICS 222 (LAB) : Submitted by

This document provides information about a computer architecture activity, including details about different types of memory units like RAM and ROM. It summarizes the key characteristics of various RAM types like SRAM, DRAM, SDRAM, RDRAM, and VRAM. It also outlines the differences between various ROM types such as ROM, PROM, EPROM, EEPROM, and flash memory. Finally, it shares the results from a PC Wizard test, detailing specifications of the memory modules and memory controller.

Uploaded by

Jasmine Mycarl Manangan
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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ACTIVITY NO.

2
Computer Architecture
ICS 222(LAB)
2:30-4:00 MTh

Submitted by:
Blanco, Jose Mari
Garcia, Kevin
Gragasin, Mark Jr.
Manangan, Jeremy

BSCS 2
I. MEMORY UNIT
A. RAM
 Semiconductor memories where all read and write functions are performed.
 It is a volatile memory which needs constant supply of power to store data. All data
will be lost when power is turned off.
 Random Access Memory: Can access any memory cell directly
 An IC made of millions of transistors and capacitors

TYPES OF RAM
SRAM: Static RAM
􀁺 Uses multiple transistors, typically four to six, for each memory cell (a bit)
􀁺 Used primarily for cache, registers in main storage units and processors
􀁺 Created with a circuit called ‘flip-flop’ which preserves status of data inside the circuit.
􀁺 Data is not lost therefore refresh is unnecessary resulting in higher processing speed.
􀁺 Cost is high because the circuits are complicated and memory capacity is smaller than
DRAM

DRAM: Dynamic RAM


􀁺 Cost low because circuit is simple and small
􀁺 A transistor and a capacitor are paired to create a memory cell (a bit)
􀁺 The capacitor holds the bit of information and acts as a switch for read and write
􀁺 Needs constant charge to store data
􀁺 The problem with the capacitor is that its value leaks with time
􀁺 Memory is refreshed at regular intervals which affects performance speed
􀁺 Refresh operation happens automatically 1000s of times/sec – as such, it is ‘dynamic’
􀁺 Used in storage units of computers, printers and other devices

SDRAM: Synchronous DRAM


􀁺 High speed DRAM
􀁺 Developed to keep up with the operating speed of processors
􀁺 Takes advantage of the burst mode concept by staying on the row containing the
requested bit and moving rapidly through the columns, reading each bit as it goes
􀁺 The idea is that most of the time the data needed by the CPU will be in sequence
􀁺 SDRAM is about five percent faster than EDO RAM
􀁺 Maximum transfer rate to L2 cache ≈ 528MBps

RDRAM: Rambus DRAM


􀁺 A radical departure from the previous DRAM architecture
􀁺 Uses a Rambus in-line memory module (RIMM)
􀁺 Use of a special high-speed data bus called the Rambus channel
􀁺 RDRAM memory chips work in parallel to achieve
a data rate of 800 MHz

VRAM: Video RAM


􀁺 Also known as Multiport dynamic random access memory (MPDRAM)
􀁺 Used specifically for video adapters or 3-D accelerators

Other Types of RAM


􀁺 FPM DRAM: Fast page mode DRAM
􀁺 It waits for the first bit of data to be located and read before it looks for the next bit
􀁺 Maximum transfer rate to L2 cache ≈ 176MBps

􀁺 EDO RAM: Extended data-out DRAM


􀁺 As soon as the address of the first bit is located, it begins looking for the next bit
􀁺 It is about five percent faster than FPM DRAM
􀁺 Maximum transfer rate to L2 cache ≈ 264MBps

B. ROM
 Read-only memory, also known as firmware
 Instructions are written in ROM by the firm or manufacturer of the chip.
 Data stored in such chip is non-volatile
 Data stored in these chips is either unchangeable or requires a special operation to
change

TYPES OF ROM
ROM
􀁺 Also known as ‘mask’ ROM
􀁺 Firmware – a program used to start a computer, etc
􀁺 User cannot add any programs or data
􀁺 Used in memories of games, software etc.

PROM
􀁺 Has a grid of columns and rows just as ordinary ROM
􀁺 Every intersection of a column and row has a fuse connecting them
􀁺 The higher voltage breaks the connection between the column and row by burning out the
fuse
􀁺 Programmable read-only memory can only be programmed once
􀁺 Inexpensive
􀁺 Great for prototyping the data for a ROM before committing to the costly ROM fabrication
process

EPROM
􀁺 Erasable programmable read-only memory
􀁺 Can be rewritten many times
􀁺 Similar to PROM, except that the intersection can be charged to create barrier for signal
transmission
􀁺 Incremental changes cannot be done
􀁺 Ultraviolet light is used to erase the chip

EEPROM
􀁺 Electrically erasable programmable read-only memory
􀁺 Incremental changes can be done
􀁺 Electric field is used to alter the data
􀁺 Slow as only one byte can be changed each time

Flash Memory
􀁺 Similar to EEPROM
􀁺 Uses in-circuit wiring to erase by applying an electrical field to the entire chip or to
predetermined sections of the chip called blocks
􀁺 Chunk of 512 bytes data can be altered each time

II. PC WIZARD RESULTS


General Information :
DIMM 1 (RAS 1, RAS 0) : 512 (Double Bank)
DIMM 2 : Empty

Information SPD EEPROM (DIMM 1) :


Manufacturer : Kingston
Part Number :K
Serial Number : 702AD7ED
Type : DDR-SDRAM PC-3200 (200MHz) - [DDR-400]
Size : 512MB (2 rows, 4 banks)
Module Buffered : No
Module Registered : No
Module SLi Ready (EPP) : No
Width : 64-bit
Error Correction Capability (EC... No
Max. Burst Length : 8
Refresh : Reduced (.5x)7.8 µs, Self Refreshµs
Voltage : SSTL 2.5vv
Prefetch Buffer : 2-bit
Supported Frequencies : 133MHz, 166MHz, 200MHz
CAS Latency (tCL) : 2 clocks @ 133MHz, 2.5 clocks @ 166MHz, 3 clocks @ 200MHz
RAS to CAS (tRCD) : 2 clocks @ 133MHz, 3 clocks @ 166MHz, 3 clocks @ 200MHz
RAS Precharge (tRP) : 2 clocks @ 133MHz, 3 clocks @ 166MHz, 3 clocks @ 200MHz
Cycle Time (tRAS) : 6 clocks @ 133MHz, 7 clocks @ 166MHz, 8 clocks @ 200MHz

Memory Controller Information :


Memory Controller : SIMM, DIMM, SDRAM
Number of connectors : 2
Max. Module Size : 1024MB
Max. Memory Size : 2048MB
Supported Speed : 70ns, 60ns, 50ns
Supported Voltages : 2.9v
Error Detection Method : No
Error Correction Capability : None
Current/Supported Interleave : 1-way/1-way

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