EC6202- ELECTRONIC DEVICES AND CIRCUITS

2 MARKS AND 16 MARKS (Q&A)

UNIT 1
1. Define PN junction.
When a p type semiconductor is joined to a N type semiconductor the contact surface is
called PN junction. P Type (majority of holes and minority of electrons) and N Type (majority of
electrons and minority of holes).
2. Explain the forward bias of diode (PN junction). (MAY 2014)
If p type terminal is connected to Anode (positive electrode), and N type terminal is
connected to cathode (Negative electrode) it is known as forward bias. At forward bias, large
current will flow in the range of milli amperes (10-3A). Forward bias is equivalent to short
circuit.
3. Explain reverse bias of diode (PN Junction).
If p type is connected to cathode and N type is connected to anode, it is reverse bias. At
reverse bias, small current will flow in the range of micro amperes (10-6). Reverse bias is
equivalent to open circuit.
4. Explain the V-I characteristics of PN Junction diode.
It is a graph drawn between voltage in x axis and current in y axis.
5. A Germanium diode has a saturation current of 10 μA at 300°K. Find the saturation
current at 400°K. (NOV 2012)
I300 = 10μA T1 = 300K T2 = 400K
I400 = I300 X 10-6 X 210 = 10.2 mA.
6. What is the effect of junction temperature on forward current and reverse current of a
PN diode?
For the same forward voltage, the forward current of a PN diode increases and reverse
saturation current increases with increase in junction temperature.
7. Differentiate between breakdown voltage and PIV of a PN diode.
The breakdown voltage of a PN diode is the reverse voltage applied to it at which the PN
junction breaks down with sudden rise in reverse current. Whereas, the peak inverse voltage
(PIV) is the maximum reverse voltage that can be applied to the PN junction without damage to
the junction.
8. Define rectifier. (NOV 2013)
It is a device which converts alternating current into direct current.
9. Define knee voltage.
It is the forward voltage of a PN diode at which the current thorough the junction starts
increasing rapidly.
10. Define breakdown voltage.
It is the reverse voltage of a PN junction diode at which the junction breaks down with
sudden rise in the reverse current.
11. Mention the type of rectifier circuits. (MAY2015)
(i) Half wave rectifier
(ii) Full wave rectifier
(a) centre tap rectifier
(b) Bridge rectifier
12. Explain the Half wave circuit.
Half wave rectifier circuit consists of one Semiconductor Diode D1 and load Resistance
RL. That is current will flow during positive half cycle and no current will be conducted during
negative half cycle.
13. List the advantages of full bridge rectifier.
1. Centre-tapped transformer is not needed.
2. For the same secondary voltage, the output is doubled than that of the centre-tap circuit.
14. Define Zener diode.
A zener diode is a properly doped crystal diode which has a sharp breakdown voltage.
15. Compare between half wave and full wave rectifiers.
1. The efficiency of a full wave rectifier is double that of a half wave rectifier
2. The ripple factor is large and frequency of voltage is low in a half wave rectifier, hence the
waveform cannot be easily smoothed whereas in full wave rectifier, the frequency is large
therefore can be filtered easily with simple filtering circuits.

16. Define ripple factor

The ripple factor is a measure of purity of the dc output of a rectifier and is defined as
17. Define rectifier efficiency.
The rectification efficiency tells us what percent of total input ac power is converted into
useful dc output power. Thus rectification efficiency is defined as
18. Define voltage regulation
Voltage regulation is a measure of the ability of a rectifier to maintain a specified output
voltage with the variation of load resistance and is defined as follows.
19. List the classification of filters
1. Low pass filter which transmits low frequencies to the load and attenuates high frequencies.
2. High pass filter which transmit high frequencies.
3. Band pass filter which transmits a band of frequencies.
20. Define LED. (NOV 2013)

The PN junction diode can emit light through a process known as electro luminescence. When a
diode is forward biased, majority of the carriers on both side of the junction will cross the
junction potential barrier. This recombination emission is responsible for the diode emitting
light.
21. Define LCD (Liquid Crystal Display). (MAY 2014)
A thin film of LC fluid is sandwiched between two glass plates. The glass plates are
coated with conductive transparent in the film formed of the desired alpha numeric image.
LCD’s consume less power and have the shortest life.
22. Mention the types of LCD.
 Dynamic scattering
 Field effect.
23. Mention the materials used in LED. (MAY 2014)
 Gallium Arsenic Zinc Antimony.
 Gallium Phosphorous.
 GA As Ps.
 Ga PN.
24. What is an ideal diode?
An ideal diode is one which offers zero resistance when forward biased and infinite
resistance when reverse biased.
25. Compare ideal diode as a switch.
 An ideal diode when forward biased is equivalent a closed (ON) switch and when reverse
biased, it is equivalent to an open (OFF) switch.
26. Draw the circuit diagram of PN Diode

27. Draw the V-I characteristics of an ideal diode.

28. List the PN diode parameters. (MAY 2013)

1. Bulk Resistance. ( )
2. Static Resistance/Junction Resistance (or) DC Forward Resistance ( or )
3. Dynamic Resistance (or) AC Forward Resistance ( or or )
4. Reverse Resistance ( )
5. Knee Voltage ( )
6. Breakdown Voltage ( )
7. Reverse Current (or) Leakage Current

29. State the PN diode ratings.

Even PN-Junction has limiting values of maximum forward current, peak inverse voltage
and maximum power rating.
30. Define reverse recovery time.
It is maximum time taken by the device to switch from ON to OFF stage.
31. List the PN diode switching times.
 Recovery Time
  Forward Recovery Time
 Reverse Recovery Time
 Reverse recovery time
 Storage and Transition Times
32. Define transition capacitance of a diode.
Transition Capacitance (CT) or Space-charge Capacitance: When a PN-junction is
reverse-biased, the depletion region acts like an insulator or as a dielectric.
The P- and N-regions on either side have low resistance and act as the plates. Hence it is similar
to a parallel-plate capacitor. This junction capacitance is called transition or space-charge
capacitance (CT).
It is given by =
Where, A = Cross-sectional area of depletion region.
D = Width (or) thickness of depletion region.
Its typical value is 40 pF.
Since the thickness of depletion layer depends on the amount of reverse bias, CT can be
controlled with the help of applied bias.
This property of variable capacitance is used in varicap or varactor diode.
This capacitance is is voltage dependent and is given by
Where, = Knee voltage,
= Applied reverse voltage,
K = Constant depending on semiconductor material,
n = for alloy junction,
= for diffused junction.
33. Define diffusion capacitance of a diode. (MAY2015)
Diffusion or Storage Capacitance (CD): This capacitive effect is present when the
junction is forward-biased.
It is called diffusion capacitance due to the time delay in minority charges across the
junction by diffusion process. Due to this fact, this capacitance cannot be identified in terms of a
dielectric and plates. It varies directly with forward current. When a forward-biased PN-junction
is suddenly reverse biased, a reverse current flows which is large initially, but gradually
decreases to the level of saturation current, I0.
This effect can be likened to the discharging, of a capacitor and is, therefore called diffusion
capacitance, CD. Its typical value is 0.02 F
It is given by:
Where, = Mean life time of carrier
= Constant =2 for Si and 1 forGe
I = Forward current
I0 = Reverse saturation current
VT = Volt equivalent of temperature
34. Draw the V-I characteristics of a zener diode

35. List some applications of zener diode.

Zener diode finds wide commercial and industrial applications. Some of their common
applications are:
 As voltage regulators.
 As peak clippers or voltage limiters.
 For wave shaping.
 For meter protection against damage from accidental application of excessive voltage.
 As a fixed reference voltage in a network for biasing and comparison purposes and for
calibrating voltmeters.

36. What is a rectifier-filter? List the different types of filters.

A filter circuit is a device which removes the AC component but allows the DC
components of the rectifier to reach the load.

Ripples can be removed by one of the following filtering methods.

(i) A capacitor, in parallel to the load, provides a easier bypass for the ripples due to low
impedance to AC at ripple frequency and leave the DC appear across the load.
(ii) An inductor, in series with the load, prevents the passage of ripples due to high impedance at
ripple frequency, while allowing the DC due to low resistance to DC.
(iii) Various combinations of capacitor and inductor, such has L-section filter, π-section filter,
etc., which make use of both the properties depicted above.
37. What is the need for voltage regulators? What are the drawbacks of unregulated power
supply?
An ordinary (unregulated) power supply from the following drawbacks:
Poor regulation
 The DC output voltage varies with the AC supply voltage which fluctuates at different
times of the day and is different at different locations.
 The DC output voltage varies with temperature, in case semiconductors are used.
 For certain applications the output of the filter even with small amount of ripples is not
acceptable.
38. What is voltage regulator? List some types.
A voltage regulator is a circuit which makes the rectifier-filter output voltage constant
regardless of the variations in the input voltage or load.
Types of regulators: There are three principal types of regulators, viz.,
 Shunt regulator (control element connected with series),sample network ,error detector,
constant voltage
 Series regulators(control element connected with shunt),sample network ,error detector,
constant voltage
39. Define Dynamic resistance
Dynamic resistance defined as ratio of rate of change voltage divided by rate of change
of current
40. What is the difference between diffusion current and drift current? (NOV 2013)
Drift Current Diffusion current
1. Developed due to potential gradient. 1. Developed due to charge
concentration gradient.
2. Phenomenon found both in 2. Only in semiconductors
semiconductors and metals.

41. What is diffusion current in PN Diode?

 A movement of charge carriers due to the concentration gradient in a semiconductor is
called process of diffusion.when charge carriesrs move,the current is constituted in a bar.this
current due to diffusion is called diffusion current.

42. What is hole and electron in PN diode?

After joining p-type and n-type semiconductors, electrons from the n region near the p–n
interface tend to diffuse into the p region. As electrons diffuse, they leave positively charged ions
(donors) in the n region. Likewise, holes from the p-type region near the p–n interface begin to
diffuse into the n-type region, leaving fixed ions (acceptors) with negative charge. The regions
nearby the p–n interfaces lose their neutrality and become charged, forming the space charge
region ordepletion layer

43. Difference between zener breakdown and avalanche breakdown?

Zener breakdown Avalanche breakdown

1.Breaking of covalant bond due to Breaking of covalant bond due to
intense electric field collision
2.Vz less than 6V Vz Greater than 6v
3.Temperature coefficient is Temperature coefficient is positive
negative

44. What is drifting current?

In a p-n junction diode, electrons and holes are the minority charge carriers in the p-
region and the n-region, respectively. Due to the diffusion of charge carriers, the
diffusion current, which flows from the p to n region, is exactly balanced by the equal and
opposite drift current.

45. What is peak inverse voltage?

It is defined as the maximum reverse voltage that a diode can withstand without
destroying the junction. The peak inverse voltage across a diode is the peak of negative half
cycle. For half- wave rectifier, PIV is Vm

46. Define zenerbreakdon volatge?

When a PN junction is heavily doped,the depletion region is very narrow.so under

reverse bias condition,the electric field across the depletion region is intense.such as intense field
is enough to pull the electrons out of the valance band of the stable atoms.such a creation of free
electrons is called zener effect.these minority carriers constitute very large current and the
mechanism is called as zener breakdown.

47. Dynamic resistance of the diode?

Dynamic resistance of a diodecan be defined as the ratio of change in voltage across the diode to
the change in currentthrough the diode.
16 MARKS
UNIT-1
1. Draw the circuit diagram and explain the operation of full wave rectifier using center tap
transformer and using bridge rectifier without center tap transformer. Obtain the
expression for peak inverse voltage. (MAY 2014) (NOV 2013) (MAY 2015)
2. With neat diagram explain the construction and working of LED.(MAY 2015)
3. Explain the working of LASER DIODE. (NOV 2013)
4. What is half wave Rectifier? Explain the working principle with neat sketch.
5. Explain the operation of FWR with centre tap transformer. Also derive the following for
this transformer. (6)
(i) dc output voltage (4)
(ii) dc output current (2)
(iii) RMS output voltage. (4)
6. Explain the following regulator circuits :
(i) Transistorized shunt regulator. (8)
(ii) Zener diode shunt regulator. (8) (MAY 2014) (NOV 2013) (MAY 2015)
7. With a neat diagram explain the working of a PN junction diode in forward bias and
reverse bias and show the effect of temperature on its V-I characteristics. (MAY 2014)
(NOV 2012) (NOV 2013)
8. Explain V-I characteristics of Zener diode(NOV 2013)
9. Discuss switching characterstics of PN diode (MAY 2014)
10. List out and applications of LED and LASER DIODE (NOV 2012) (MAY 2015)
 UNIT 2
1. Define Amplifier.
Amplifier is a device which amplifies the given input signal.
Example: transistor
2. Define Transistor.
It consists of two PN Junctions formed by sandwiching either p-type or n-type
semiconductor between a pair of opposite types.
3. Mention the types of transistor?
1. NPN Transistor
2. PNP Transistor
4. Mention the terminals of transistor.
The transistor has three terminals namely emitter, base and collector.
5. Define doping.
The emitter is heavily doped. The base is lightly doped and the collector is moderately
doped.
6. Define current amplification factor.
The ratio of change in output current to the change in input current at constant other side
voltage is called current amplification factor.
7. Explain the input characteristics of transistor.
It is a graph drawn between output voltage and input current keeping other side voltage
as constant.
8. Explain the output characteristics of transistor.
It is a graph drawn between output voltages and output current keeping other side current
(I/P) as constant.
9. Mention the types of connection in a transistor.
1. Common base connection.
2. Common emitter connection
3. Common collector connection.
slno characteristics CB CE CC
1. Voltage gain About 150 About 500 Less than 1
2. Input Low (about Low (about Very high
resistance 75Ω) 750Ω) (about 750KΩ)
3. Output Very high High (about Low (about
resistance (about 450KΩ) 45KΩ) 45Ω)
4. Applications For high For audio For impedance
frequency frequency matching
 applications applications

11. For a non-transistor IE = 12mA and β = 140. Determine the value of IB and Ic.
IE = 12mA, β = 140
IE = IB + IC
IC = IE - IB = 12 - 0.085 X 10-3 = 11.915mA.
12. A transistor connected in common base configuration has a low input resistance and a
high output resistance.
Low=100ohm, high=450kohm
13. Differentiate FET and BJT (any two) (MAY 2014) (NOV 2013) (MAY2015)
. FET BJT
1. Unipolar device (that is current 1. Bipolar device (current conduction by
conduction by only one type of either both electron and hole).
electron or hole).
2. High input impedance due to reverse 2. Low input impedance due to forward
bias. bias.
3. Gain is characterized by trans 3. Gain is characterized by voltage gain.
conductance
4. Low noise level 4. High noise level.
14. What are the biasing conditions to operate transistor in active region?
Emitter-base junction has to be forward biased and collector-base junction to be reverse
biased.
15. What is thermal runaway?
The power loss in transistor is primarily at the collector junction because the voltage
there is high compared to the low voltage at the forward biased emitter junction. If the collector
current increases, the power developed tends to raise the junction temperature. This causes an
increase in β and α further increase in collector current in temperature may occur resulting in
“thermal run away.”
16. If the base current in a transistor is 30μA and the emitter current is 7.2mA. What are
the values of α, β and Ic? (NOV 2013)
IB = 30μA, IE = 7.2mA
H = = Ic = βIB
I + β = 240 = 239 X 30 X 10-6
β = 240 – 1 IC = 7.17mA
β = 239
17. In a transistor operating in the active region although the collector junction is reverse
biased, the collector current is quite large. Explain.
 Forward biasing the input side and reverse biasing the output side are the requirements of
a transistor in the active region. The collector current is experimentally equal to the emitter
current. Therefore the collector current will be large as emitter current is large on the other hand,
in CE operation IB is multiplied by β, hence we get large collector current.
18. Why CE configuration is considered to be the most versatile one?
The common emitter configuration provides very good voltage gain about 500CE
configuration finds excellent usage in audio frequency applications, hence used in receivers and
transmitter.
19. Define bipolar junction transistors.
These devices operate with both holes and electrons and hence are called bipolar
junction.
20. Write the junction transistor operation may be drawn from the analysis.
1. The major charge carriers in the PNP junction transistor are holes.
2. The major charge carriers in the NPN junction transistor are electrons.
21. Write the range of parameter values for BJT.
Parameter Symbol Range of value
1. Input resistance ri A few kΩ
2. Current gain in CB α 0.9 – 0.999
mode
3. Current gain in CE β 20 - 600
mode
4. Output resistance r0 Tens of KΩ
5. Leakage current ICBO Na - μA
22. Why transistor (BJT) is called current controlled device ?
The output voltage, current or power is controlled by the input current in a transistor. So ,
it is called the current controlled device.
23. What are “emitter injection efficiency” and “base transport factor” of a transistor?
The ratio of current of injected carriers at emitter junction to the total emitter current is
called the emitter injection efficiency.
Transport factor, β = ⁄
24. Why silicon type transistors are more often used than Germanium type?
Because silicon has smaller cut-off current ICBO , small variations in ICBO due to
variations in temperature and high operating temperature as compared to those in case of
Germanium.
25. Why collector is made larger than emitter and base?
Collector is made physically larger than emitter and base because collector is to dissipate
much power.
26. What is early effect in base configuration? (NOV 2011)
A wider depletion region around the collector-base junction and a correspondingly narrower
active base region. This means that free electrons in the base region spend less time there, and have a
correspondingly smaller chance to recombine with holes in the base region. This is known as the Early
effect
27. Why collector region wider than emitter region?
 most of the BJT collector current is due to the flow of charges injected from a high-concentration
emitter into the base where there are minority carriers that diffuse toward the collector, and so BJTs are
classified as minority-carrier devices.
28. Operating modes of BJT? (MAY 2014)
 Active region
 Cut off region
 Saturation region
29. Input and output characteristics of CE, CB, CC?

30. Define JFET

A Junction field effect Transistor is a three terminal semiconductor device in which
current conduction is by one type of carrier (i.e., either electron or holes)
31. Define channel.
It is a bar like structure which determines the type of FET. Different types of N channel
are FET and P channel FET.
32. Explain the biasing of JFET.
Input is always reverse biased and output is forward biased. (Note: In transistor input is
forward biased and output is reverse biased).
33. Define Drain(ON) resistance.
It is the ratio of change in Drain – source voltage (ΔVDS) to the change in Drain current
(ΔID) at constant gate source voltage (VGS).
34. Define Tran conductance.
It is the ratio of change in drain current (ΔID) to the change in Gate – Source Voltage
(ΔVGS) at constant Drain – Source voltage (VDS)
25. Write down the formula for Amplification factor.
Drain resistance X Tran conductance = Amplification factor.
μ = Ro X gm
36. Write the advantages of JFET.
1. Input impedance of JFET is very high. This allows high degree of Isolation between the Input
and Output circuit.
2. Current carriers are not crossing the junction hence noise is reduced drastically
37. List the JFET parameters.
1. A.C drain resistance (rd)
2. Tran conductance (gm)
3. Amplification factor (μ)
38. Mention the two types of field effect transistors,
1. N-channel FET
2. P-channel FET
39. Define pinch off voltage. (MAY 2014)
As the reverse bias is further increased, the effective width of the channel decreases, the
depletion region or the space charge region widens, reaching further into the channel and
restricting the passage of electrons from the source to drain. Finally at a certain gate to source
voltage VGS = VP.
40. Explain the depletion node of operation in MOSFET.
When the gate is at negative bias, the thickness of the depletion layer further increases
owing to the further increase of the induced positive charge. Thus the drain current decreases, as
the gate is made more negative. This is called depletion mode of operation.
41. Explain the term Drain in FET.
The drain is the terminal through which the current leaves the bar. Convention current
entering the bar is designated as ID.
42. Explain the terms source in FET.
The source is the terminal through which the current enters the bar. Conventional current
entering the bar is designated as IS.
43. Define the term Gate in FET.
The gate consists of either P+ or N+ impurity regions, heavily doped and diffused to the
bar. This region is always reverse biased and in fact, controls the drain current ID.
44. Write the relative disadvantages of an FET over that of a BJT.
 The gain bandwidth product in case of a FET is low as compared with a BJT.
 The category, called MOSFET, is extremely sensitive to handling therefore additional
precautions have to be considered while handling.
45. Mention the methods used for biasing circuits in FET.
 Self-bias.
 Potential divider bias.
46. Mention the difference between FETs and MOSFETs.
Symbol JFET MOSFET
gm 1000 to 25,000 1000 to 20,000 pmhog
μmhoms
rd 0.1 to 1MΩ 1 to 50KΩ
IGSS 0.1 to 10nA 0.1 to 10nA
-ras >109Ω >101313Ω
Crss or Cgd 1 to 4Pf 0.005 to 1Pf
47. Explain the term MOSFET.
In the insulated gate FET, conductivity is controlled by the potential on the insulated
metal plate lying on the top of the channel the insulated gate field effect transistor is often called
metallic oxide semiconductor FET.
48. List some applications of JFETs.
 Used as buffers in measuring equipment, receivers and other general purpose devices.
 Used in RF amplifiers of FM tuners and communication equipment.
 Used in mixer circuits in FM and TV receivers and communication equipment.
 Used in cascade amplifiers in measuring and test equipment.
 Used as voltage variable resistor (VVR) in OP-AMPs and tone controls.
 Used in hearing aids and inductive transducers.
 Used in oscillator circuits.
 As the physical size is small; it finds use in digital circuits in computers, large scale
integration (LSI) and memory circuits.
49.What is UJT?
A unijunction transistor (UJT) is an electronic semiconductor device that has only
one junction. The UJT has three terminals: an emitter (E) and two bases (B1 and B2). The base is
formed by lightly doped n-type bar of silicon. Two ohmic contacts B1 and B2 are attached at its
ends. The emitter is of p-type and it is heavily doped. The resistance between B1 and B2, when
the emitter is open-circuit is called inter base resistance.
50. Intrinsic standoff ratio in UJT? (NOV 2013)
 The connections at the ends of the bar are known as bases B1 and B2; the P-type mid-point is the
emitter. With the emitter disconnected, the total resistance R BBO, a datasheet item, is the sum of RB1 and
RB2 as. RBBO ranges from 4-12kΩ for different device types. The intrinsic standoff ratio η is the ratio of
RB1 to RBBO. It varies from 0.4 to 0.8 for different devices.
51. Define latching current of SCR. [Nov/Dec 2012] (MAY2015)
The latching current is defined as the minimum value of anode current which it must
attain during turn on process to maintain conduction when gate signal is removed.
52. What are the factors that influence the turn-off time of thyristor? [Nov/Dec 2010]
1. Recovery Process 2. Recombination Process
53. What are the parameters involved in switching loss of power device? [April/May 2011]
 Forward conduction loss
 Loss due to leakage current during forward and reverse blocking
 Switching losses at turn-on and turn-off.
 Gate triggering loss.
54. Why are IGBT becoming popular in their application to controlled converters?
 Lower hate requirements
 Lower switching losses
 Smaller snubber circuit requirements
55. In TRIAC which of the modes the sensitivity of gate is high.
The more sensitive of the triac is greatest in the first quadrant when turned on with
positive gate current and also in the third quadrant when turned on with negative gate current.
56. How can a thyristor turned off?
A thyristor can be turned off by making the current flowing through it to a level below
the holding current.
57. Define holding current. (NOV 2013)
The holding current is defined as the minimum value of anode current below which it
must fall to for turning off the thyristor.
58. Write down the applications of IGBT?
 AC and DC motor drives
 UPS systems
 Power supplies
 Relays and Contactors
59.IGBT is a voltage controlled device. Why?
 IGBT is a voltage controlled device because the controlling parameter is gate emitter
voltage VGE
60. Application of UJT?

 Trigger device for SCRs and TRIACs

 Non sinusiodal oscillators
 Saw tooth generators
 Timing circuits

61. Special features of FET?

 Voltage control device

 Input resistance is very high
 High switching speed

62. Compare JFET with BJT?

JFET BJT
1.Voltage control device Current controlled device
2.Unipolar device Bipolar device
3.Gate,source,drain Emitter,base,collector

63. Draw Equivalentcircuit of UJT?

16 MARK
1. Draw and explain the Input and Output characteristics of a BJT in CE configuration.
(NOV 2013) (NOV 2013)
2. Describe the static input and output characteristics of a CB transistor with neat circuit
diagram.
 3. Distinguish clearly the difference between JFET and MOSFET?
4. Explain the construction of N channel JFET. Also explain the drain and transfer
characteristics of the same.
5. Explain the construction and working of enhancement MOSFET and depletion
MOSFET. Draw the characteristics (MAY 2014) (NOV 2013) (MAY 2015)

6. Explain the operation of IGBT with the help of neat structural diagram and suitable wave
forms

7. Explain the construction, equivalent circuit and operation of UJT. Draw the characteristics
of UJT. (NOV 2013) (NOV 2012) (MAY 2015)
8. Explain the operation and characterstics of SCR
9. Explain the operation and characterstics of TRIAC
10. Compare CE, CB, and CC. (MAY 2014)

UNIT 3
1. Why h-parameters are called hybrid parameters?
Because they have different units are mixed with other parameters.
2. Which is the smallest of the four h-parameters of a transistor?
h0 or h12
3. What is the typical value of hie?
1 kΩ
4. A transistor connected in common base configuration has a -________ input resistance
and a ________ output resistance.
 Low input resistance.
 Very high output resistance.
5. Which of the BJT configuration is suitable for impedance matching application and
why?
CC configuration is suitable for impedance matching applications because of very high
input impedance and low output impedance.
6. What are the tools used for small signal analysis of BJT?
 h – Parameter circuit model.
 z – Parameter circuit model.
 y – Parameter circuit model.
 Transconductance parameter circuit model.
 Physical model.
 T-model.
7. What is the significance of ICBO and ICO?
ICBO is the leakage current from the collector to base with emitter open. ICO is the
leakage current from collector to emitter with base open (ICO = ICEO).
8. Write the equation for the output voltage and voltage gain for CS amplifier.
The output voltage is given by
Vo = -RD µVgs
RD + rd
Where µ is the amplification factor,
Rd is the drain resistance
Vgs = Vi, the input voltage
The voltage gain for CS amplifier is given by
Av = (Vo|Vi) = -µRD
RD + rd
9. Write the equations for the output voltage and voltage gain for CD amplifier.
The output voltage is given by
Vo = µ RsVgd
(µ + 1)Rs + rd
 Where Vgd = Vi, the input voltage.
The voltage gain for CD amplifier is given by
Av = µ Rs
(µ + 1)Rs + rd
10. Write the equations for the output voltage and voltage gain for CG amplifier.
The output voltage is given by
Vo = -Vo
+ gm Vi rd + Vi
Rd

The voltage gain for CG amplifier is given by

Av = (gmrd + 1) RD
RD + rd
11. State Miller’s Theorem.
Miller’s theorem states that if an impedance Z is connected between the input and output
terminals of a network which provides a voltage gain A, an equivalent circuit that gives the same
effect can be drawn by removing Z and connecting an impedance Zi = Z/(1 - A) across the input
and Zo = ZA/(A - 1) across the output.
12. Write the methods that are used to increase the input impedance
The two methods that are used to improve input impedances are
(i) Direct coupling (Darlington connection) and
(ii) Boot strapping.
13. Explain Bisection Theorem.
Consider a network which has miror symmetry with respect to an imaginary line. If the entire
network is denoted as N then it can be divided into two half networks N/2 about the line of
symmetry as shown in fig below.

14. What are the benefits of h-parameters?

(i) Real numbers at audio frequency
(ii)Easy to measure
(iii)Can be obtained from the transistor state characteristics curves
(iv)Convenient to use in circuit analysis and design.
15. What are the characteristics of common emitter follower?
Common emitter amplifier has
(i) Large current gain
(ii)Large voltage gain
(iii)Large power gain
(iv)Voltage phase shift is about 1800
(v)Moderate input and output impedance.
16. What are the characteristics of common collector amplifier?
Common collector amplifier has
(i)High current gain
(ii)Unity voltage gain
(iii)Large power gain
(iv)No phase difference between input and output
(v)High input impedance
(vi)Low output impedance.
17. What are the characteristics of common base amplifier?
Common base amplifier has
(i)Low current gain
(ii)High voltage gain
(iii)High power gain
(iv) No phase difference between input and output
(v)Low input impedance
(vi)High output impedance.
18. Mention two important characteristics of CC circuit.
A CC circuit has a voltage gain of 1, high input impedance and low output impedance and no
phase shift between input and output.
19. Draw hybrid model of BJT. (MAY2015)
20. What are amplifiers? (MAY2015)
A device consisting of an amplifier combined with a loudspeaker and used to increase the
volume of the sound produced by electric guitars and other musical instruments. (Class A, class
B, class AB, class C)
21. Draw High frequency model of JFET?

22. Define H parameters?

Vi
h11 = │ Vo=0 = Input resistance with output short circuited, in ohms.
Ii
Vi
h12 = │I i=0 = Fraction of the output voltage at input with input open circuited
Vo
This parameter is ratio of similar quantities, hence unit less.
Io
h21 = │V o=0 = Forward current transfer ratio or current gain with output short circuited
Ii
this parameter is ratio of similar quantities, hence unit less.
Io
h22 = │ I = Output admittance with input open circuited, in ohms.
V 0 i=0

23. Why we use H parameters to describe a transistor?

The most common one if hfe, which stands for h-forward-emitter. That means it is the
ratio of output to input in the common emitter configuration, which in turn means it is the ratio
of collector current to base current, which is basically the gain of a bipolar transistor. Beta is
another similar but not completely identical measure of gain, although in most cases the two can
be used interchangably since a good circuit doesn't rely on exact values of gain anyway.

16 MARK
 1. For a common emitter circuit draw the h-parameter equivalent circuit and write the
expressions for input impedance, output impedance and voltage gain. (MAY 2015)
2. Describe the specifications of Hybrid – π model (or) Giacoletto model with neat sketch
and derive the expression for transconductance. (MAY 2014)
3. Derive the expression for current gain, input impedance and voltage gain of a CE
Transistor Amplifier
4. Draw the circuit diagram of common source FET amplifier and give the design steps to
find the component values used in the circuit.
5. Calculate the operating point of the self biased JFET having the supply voltage VDD =
20V, maximum value of drain current IDSS = 10 mA and V GS = - 3V at ID = 4mA. Also
determine the values of resistors RD and RS to obtain this bias condition
6. Explain how the transconductance of a JFET varies with drain current and gate voltage
characteristics and transfer characteristics
7. Explain how the transconductance of a MOSFET varies with drain current and gate voltage
characteristics and transfer characteristics

UNIT 4

1. Define differential amplifier.

When two or more input is applied to the amplifier and receives the single output is
called differential amplifier.
VO = V1 - V2
2. What is multistage amplifier?
If the voltage or power gain obtained from a single stage small amplifier is not sufficient
for a particular application, one have to use more than one stage of amplification to achieve
necessary voltage and power gain. Such an amplifier is called a multistage amplifier.
3. Define Common Mode Rejection Ratio. (MAY 2014)
The relative sensitivity of an op-amp to a difference signal as compared to a common
mode signal is called common-mode and gives the figure of merit _ for the differential amplifier.
CMRR, ρ=|Ad/Ac|
4. Give the purpose of using coupling networks.
 The coupling networks serve the following two purposes
(i) It transfers the a.c. output of one stage to the input of the next stage.
(ii) It isolates the d.c. conditions of one stage to the next.
5. What are the coupling schemes that are used in the multistage amplifiers?
The coupling schemes that are used in the multistage amplifiers are:
(i) Resistance- capacitance (RC) coupling.
(ii) Transformer coupling.
6. Write the classification of amplifiers based on Q point (operating point)
(iii) (i) Class A amplifier.
(iv) (ii) Class B amplifier.
(v) (iii)Class AB amplifier.
(vi) (iv)Class C amplifier.
7. Explain Class A amplifier
100% of the input signal is used (conduction angle Θ = 360° or 2π); i.e., the active element
remains conducting (works in its "linear" range) all of the time. Where efficiency is not a
consideration, most small signal linear amplifiers are designed as class A. Class A amplifiers are
typically more linear and less complex than other types, but are very inefficient. This type of
amplifier is most commonly used in small-signal stages or for low-power applications (such as
driving headphones).

8. Explain about Class B amplifier

50% of the input signal is used (Θ = 180° or π; i.e., the active element works in its linear
range half of the time and is more or less turned off for the other half). In most class B, there are
two output devices (or sets of output devices), each of which conducts alternately (push–pull) for
exactly 180° (or half cycle) of the input signal; selective RF amplifiers can also be implemented
using a single active element.
These amplifiers are subject to crossover distortion if the transition from one active element
to the other is not perfect, as when two complementary transistors (i.e., one PNP, one NPN) are
connected as two emitter followers with their base and emitter terminals in common, requiring
the base voltage to slew across the region where both devices are turned off.

9. Explain about Class C amplifier

Class C amplifiers conduct less than 50% of the input signal and the distortion at
the output is high, but high efficiencies (up to 90%) are possible. Some applications
(for example, megaphones) can tolerate the distortion. A much more common
application for class C amplifiers is in RF transmitters, where the distortion can be
vastly reduced by using tuned loads on the amplifier stage

10. Explain about Class D amplifier

In the class D amplifier the input signal is converted to a sequence of higher voltage
output pulses. The averaged-over-time power values of these pulses are directly
proportional to the instantaneous amplitude of the input signal. The frequency of the
output pulses is typically ten or more times the highest frequency in the input signal to
be amplified. The output pulses contain inaccurate spectral components (that is, the
pulse frequency and its harmonics) which must be removed by a low-pass passive filter.
The resulting filtered signal is then an amplified replica of the input.
11. What is class AB operation?
 The power amplifier is said to be class AB amplifier, if the Q point and the input
signal are selected such that the output signal is obtained for more than 180˚ but less
than 360˚, for a full input signal.
 The efficiency of class AB is more than class A but less than class B operation. The
class AB is important to eliminate cross over distortion.
12. What is conversion efficiency?
It is a measure of the ability of an active device in converting the d.c. power of the
supply into the a.c. power delivered to the load. Conversion efficiency is also referred to
as theoretical efficiency and collector circuit efficiency (for transistor amplifier) and it is
denoted by η. By definition the percentage efficiency is
(vii) Signal power delivered to the load
(viii) η= *100%
d.c. power supplied to the output circuit
13. What are the advantages of class B amplifier compared to class A amplifier?
 Possible to obtain greater power output.
 Efficiency is higher.
 (iii)Negligible power loss.
14. Why class A amplifier must not be operated under no signal conditions?
Under no signal condition, the entire d.c. power input P DC = VCC ICQ, is dissipated
as the heat. Thus the power dissipation is maximum under no signal condition. This may
increase the transistor junction temperature beyond safe value, which may lead to transistor
damage. To avoid this, class A amplifier must not be operated under no signal condition.
15. What is cross over distortion?
For making transistor ON, it is necessary that V BE voltage must exceed0.7V. Due to this,
in class B amplifier while crossing over from one half cycle to other, as long as input is
below 0.7 V, none of the transistor is ON and output is zero. Due to this there is distortion in
the output, which is called the cross over distortion.
16. How the cross over distortion can be eliminated?
To overcome the cross over distortion, a small forward bias is kept applied to the
transistors. So that when input is zero, this additional forward bias can make the transistor
ON immediately, eliminating cross over distortion.
17. What is the drawback of class B amplifier? How this is minimized?
The drawback of class B amplifier is cross over distortion
To overcome the cross over distortion, a small forward bias is kept applied to the
transistors. So that when input is zero, this additional forward bias can make the transistor
ON immediately, eliminating cross over distortion.
18. Advantage of differential amplifier?

A differential amplifier helps to increase the CMRR which in turn helps avoid unwanted
signals that couple into the input to get propagated. IT also helps to increase the signal to noise
ratio. Further more it provides larger output voltage swings.
16M ARK

1. Derive the equation for differential mode gain and common mode gain of a differential
amplifier(MAY 2014) (NOV 2012) (MAY 2014)
2. Derive the equation for 3db bandwidth of capacitance coupled single tuned amplifier.
3. What is neutralization? How can it be achieved? (MAY 2015)
4. Explain the hazelline neutralization method.
5. How are amplifiers classified based on the biasing condition?
6. What is tuned amplifier? What are the varius types of tuned amplifiers?
7. Explain the operation of SINGLE tuned amplifiers?

UNIT 5
1. Mention the types of feedback.
1. Positive or regenerative feedback.
2. Negative of degenerative feedback.
2. Define feedback.
The process of injecting a fraction of the output voltage of an amplifier into the input so
that it becomes a part of the input is known as feedback.
3. Define positive feedback.
It is the feedback voltage in phase with the input from the source; it reinforces the
original input signal and is called positive or regenerative feedback.
4. Define Negative feedback.
If the feedback voltage is opposite in phase to the input from the source, i.e., opposes the
original input signal and is called negative or degenerative feedback.
5. Mention the four connections in Feedback.
 Voltage series feedback.
 Voltage shunt feedback
 Current series feedback.
 Current shunt feedback.
6. Explain the voltage series feedback.
In this case, the feedback voltage is derived from the output voltage and fed in series with
input signal. The input of the amplifier and the feedback network are in series is also known as
series parallel in parallel, hence this configuration is also known as series parallel feedback
network.
7. Explain the voltage shunt feedback.
The input of amplifier and the feedback network are in parallel and known as parallel –
parallel feedback network. This type of feedback to the ideal current to voltage converter, a
circulating having very low input impedance and very low output impedance.
8. Explain the current series feedback.
When the feedback voltage derived from the load current and is fed in series with the
input signal, the feedback is said to be current series feedback, the inputs of the amplifier and the
feedback network are in series and the output are also in series. This configuration is also called
as series-series feedback configuration.
9. Explain the current shunt feedback.
When the feedback voltage is derived from the load current and a fed in parallel with the
input signal, the feedback is said to be current shunt feedback. Herein the inputs of the amplifier
and the feedback network are in parallel and the outputs are in series. This configuration is also
known as parallel series feedback.
10. Write the effects of negative feedback. (MAY 2015)
1. The gain becomes stabilized with respect to changes in the amplifier active device parameters
like hfe.
2. The non-linear distortion is reduced there by increasing the signal handling capacity or the
dynamic range of the amplifier.
11. Write the conditions for a circuit to oscillate.
The oscillator circuit should consist of an amplifier and a portion of the output should be
feedback to the input. For sustained oscillations, the feedback voltage must be in phase with the
input, i.e., total phase shift around the loop must be 360°.
2. The amount of energy or power feedback to the input must be sufficient to the input circuit.
12. Mention the classification of oscillators.
According to the frequency determining networks,
 RC oscillators
 LC oscillators
 Crystal oscillators
13. List the advantages of phase shift oscillator.
 The phase shift oscillator does not required conductance or transformers.
 It is suitable for the low frequency range i.e., from a few hertz to several hundred KHz.
The upper frequency is limited because the impedance of RC network may become so
small that it loads the amplifier heavily.
14. Write the disadvantages of Phase shift oscillator.
 It is necessary to change the C or R in all the three RC networks simultaneously for
changing the frequency of oscillations. This is practically difficult.
 It is not suitable for high frequencies.
15. Write the main drawback of LC oscillators.
 The frequency stability is not very good.
 They are too bulky and expensive and cannot be used to generate low frequencies.
16. Define Piezo electric effect.
Certain crystal, when suitable wt, develop a potential difference between opposite faces,
magnitude and polarity of which depends on pressure or tension applied to the other pair of
perpendicular faces. This effect is called Piezo electric effect.

17. Define return ratio and loop gain?

 A path of signal from input terminals through basic amplifier,through the feedbac network
and back to the input terminals forms a loop.the gain of this loop is the product gain*feedback
factor

18. Define stability.

The variation of input is applied to the system; to get the constant output is called
stability.
19. Define switch.
A switch is a device which opens or closes the electrical circuit, i.e., can turn on or off
current in an electrical circuit. An ideal switch has zero internal resistance when it is closed an
infinite leakage resistance when it is open.
20. Give the barkhausen criterion for oscillator (NOV 2012) (MAY 2013)
When AB = -1, the gain is infinite this represents the condition for oscillation The requirements
for oscillation are described by the Barkhausen criterion: The magnitude of the loop gain AB must be 1
The phase shift of the loop gain AB must be 180,or 180 plus an integer multiple of 360.
It should be mentioned that the criterion is necessary but not sufficient. The criterion is just an
observation based on the assumption of a linear circuit.
21. Advantage of negative feedback amplifier?
Better frequency response, less distortion, less gain or voltage drift, less temperature drift, better
CMRR, SVRR, bias point stability.
23. Give some examples of linear and non-linear wave shaping circuits.
Linear wave shaping circuits – use R,L,C.
Examples: RC, RL, RLC circuits, Integrator, Summer, etc.
Non-linear wave shaping circuits – uses R,L,C diodes,
Examples: Clippers, Clampers, etc.
24. Why the capacitor in a high pass RC circuit is called blocking capacitor?
Because of the blocking property of the capacitor for DC or low frequency input signals,
the capacitor acts like an open circuit and blocks the signal. So the capacitor in high-pass RC
circuits is called “blocking capacitor”.
25. Why a high-pass RC circuit is called differentiator?
Because it gives the output voltage proportional to the differentiation of input voltage.
26. Define frquency stability of an oscillator?

The term “frequency stability” is used to define the ability of the oscillator to maintain a
single fixed frequency as long as possible over a time interval. These deviations in frequency are
caused due to variations in the values of circuit features (circuit components, transistor
parameters, supply voltages, stray-capacitances, output load etc.) that determine the oscillator
frequency.

27. Mention two high frequency LC oscillators?

 Hartley oscillator
 Colpitts oscillator

16M ARK

1. Explain the concept of negative feedback in amplifier. Derive the expressions for voltage
gain, input impedance and output impedance.
2. With a neat diagram, explain the construction and working of BJT RC phase shift
oscillator. (MAY 2014) (NOV 2012)
3. What is crystal oscillator? Draw the circuit diagram and explain the operation. (MAY
2014)
4. Draw and explain the operation of a Hartley oscillator. Derive the equation for fr and hfe .
(NOV 2012) (NOV 2013) (NOV 2013)
5. Draw the block diagram of a voltage series feedback amplifier and derive the equation for
input impedance, output impedance and the voltage gain.
6. Discuss the various topologies of feed back amplifier. (NOV 2013) (MAY 2014)
7. Discuss the operation of a colpitts oscillator in detail. (MAY 2014)
8. Describe the operation of a typical voltage shunt feedback amplifier. (NOV 2013)