EE-606:

Lecture 38: Modern MOSFET

Muhammad Ashraful Alam

Electrical and Computer Engineering
Purdue University
West Lafayette, IN USA
Fall 2007

NCN
www.nanohub.org
Alam ECE-606 S08 1
 topic map

Equilibrium DC Small Large Circuits

signal Signal

Diode

Schottky

BJT/HBT

MOS-
FET

Alam ECE-606 S08 2

 outline

Short channel effect

µ Cox
Control of threshold voltage
ID = (VG − Vth )
* 2

Mobility enhancement
Lch

Conclusion

REF: Chapter 19, SDF

Alam ECE-606 S08 3

short channel effect: Vth roll-off

Vth

Channel length

QB qN AWT
Vth = 2φF − = 2φF +
Cox Cox

Alam ECE-606 S08 4

short channel effect: punch-through

ln(ID) Short channel

Longer channel

VG

Recall similar problem with bipolar transistor

Alam ECE-606 S08 5

 physics of short channel effect

L L

L’ L’

QB , Long QB , Short
Vth , L = 2φF − Vth , Short = 2φF −
Cox
Cox
QB , long → − qN AWT − qN A × Z × WT
L + L'
QB , Short = 2
Z×L
QB , Long  QB , short  L + L'
∆Vth = − 1 −  = −qN AWT
Cox  QB , Long  2L
−qN AWT  L '+ L 
= 1−
Cox  2 L 
Alam ECE-606 S08 6
 short channel effect

L − L' 
2

(rJ + WS ) = W +  rJ +
2
T
2

 2 
 2WT  L
L ' = L − 2rJ  1 + − 1
 r 
 J  rJ
L’
Ws
−qN AWT  L '+ L 
∆Vth = 1 − 2 L  WT
Cox  
−qN AWT rJ  2WT 
=  1 + − 1
Cox L rJ 


Alam ECE-606 S08 7

 how to make Vth roll-off small …

qN AWT rJ  2WT 
Lmin =  1 + − 1
Cox α  rJ 


Vth !Shallow junction and geometry of transistors

laser annealing of junctions, FINFETs
! Reduced substrate doping NA
Consider WT and junction breakdown
!Thinner gate oxides
Consider tunneling current
! Higher gate dielectric
Consider bulk traps
Lmin Lch

Alam ECE-606 S08 8

 outline

Short channel effect

Control of threshold voltage

Mobility enhancement

Conclusion

Alam ECE-606 S08 9

solution: ultra-thin body SOI

VG

t ox
EF
t Si

VG
NA

Alam ECE-606 S08 10

solutions: silicon on insulator

Alam ECE-606 S08 11

Example: FINFET, OmegaFET, X-FET

Alam ECE-606 S08 12

 quantization and control of fin-width

ε2 h2 n 2π 2
εn =
2m *t Si2
ε1
EC EG′ = EG + ε1 + ε1h
E(eV)

EF
ε1h EV
ε 2h Band-gap widening
Fluctuation in thickness
ε 3h
t Si

x
Alam ECE-606 S08 13
 how to make Vth roll-off small …

qN AWT rJ  2WT 
Lc =  1 + − 1
Cox α  rJ 

(as small as possible)

Vth Shallow junction and geometry of transistors

laser annealing of junctions, FINFETs
Reduced substrate doping NA
Consider WT and junction breakdown
Thinner gate oxides
Consider tunneling current
Higher gate dielectric
Lch Consider bulk traps
Lc

Alam ECE-606 S08 14

 variability in Vth at low doping
QB qN DWT
Vth = 2φF − = 2φF −
Cox Cox

From IBM Journal of Res. And Tech.

Alam ECE-606 S08 15
 variability in threshold voltage
QB qN AWT
Vth = 2φF − = 2φF −
Cox Cox

µ Cox
ID = (VG − Vth* ) 2
Lch

If every transistor has different

Vth,and therefore different current,
circuit design becomes difficult

Alam ECE-606 S08 16

Vth control by substrate bias
QB
Vth = ψ s − =ψ s + B ψ s
Cox

ψ s = 2φF

ψ s = 2φF − VBS

Alam ECE-606 S08 17

 Vth control by metal work-function
High-k/metal gate MOSFET
Vacuum level
qVbi

qχs

EC
qΦm
EF

Qi = Cox (VG − Vth ) EV

QB
Vth = −VFB + ψ s −
Cox qVbi = ( χ + Eg − ∆ p ) − Φ M
= qVFB
Alam ECE-606 S08 18
 how to make Vth roll-off small …

qN AWT rJ  2WT 
Lc = 1+ − 1
κ oxε 0 α  rJ 

x0

Shallow junction
Vth laser annealing of junctions
Higher substrate doping NA
Consider WT and junction breakdown
Thinner gate oxides
Consider tunneling current
Higher gate dielectric
Consider bulk traps
Lc Lch

Alam ECE-606 S08 19

 tunneling current

 ni2 − qVG β 
J T = Qi (VG ) − e  υth T ( E )
 NA 
ITRS
EC
T
EF
EG
EV

Alam ECE-606 S08 20

 how to make Vth roll-off small …

qN AWT rJ  2WT 
Lc = 1+ − 1
κ oxε 0 α  rJ 

x0
High-k/metal gate MOSFET
Shallow junction and geometry of transistors
laser annealing of junctions, FINFET
Substrate doping NA
Consider WT and junction breakdown
Thinner gate oxides
Consider tunneling current
Higher gate dielectric
Consider bulk traps

Alam ECE-606 S08 21

 advantages of high-k dielectric …
High-k/metal gate MOSFET

qN AWT rJ  2WT  µ Cox

Lc = 1+ − 1 ID = (VG − Vth* ) 2
κ oxε 0 α  rJ 

Lch
x0
Thicker oxide (x0) for same capacitance … … ensures the drive-current is not reduced
, but tunneling current is suppressed.

Alam ECE-606 S08 22

 outline

Short channel effect

Control of threshold voltage

µ Cox
ID = (VG − Vth )* 2
Mobility enhancement Lch
Conclusion

Alam ECE-606 S08 23

Ge for PMOS, Si for NMOS

Takagi, TED 52, p.367, 2005

Alam ECE-606 S08 24

basics of strain ..

Compressive biaxial strain

Enhances mobility
in the channel …

Alam ECE-606 S08 25

biaxial strain to enhance mobilty

Alam ECE-606 S08 26

biaxial strain to enhance mobilty

Adapted from Chang et. al, IEDM 2005.

Alam ECE-606 S08 27

Uniaxial strain to enhance mobilty

Alam ECE-606 S08 28

 summary

1) Short channel effect is a serious concern for

MOSFET scaling.
2) Many novel solutions at the material, device, circuit
level have been proposed to reduce short channel
effect.
3) The success of these efforts are now reflected in
effective MOSFET channel lengths of 30 nm.

Alam ECE-606 S08 29