VLSI Design-QBANK
VLSI Design-QBANK
VLSI Design-QBANK
DEPARTMENT OF
QUESTION BANK
VI SEMESTER
Regulation – 2013
Prepared by
Page 1 of 13
VALLIAMMAI ENGINEERING COLLEGE
SRM Nagar, Kattankulathur – 603 203.
QUESTION BANK
SUBJECT : EC6601 – VLSI Design
SEMESTER/YEAR : VI / III
PART - A
Q. BT
Questions Competence
No Level
1. What is the need for demarcation line? BTL 1 Remembering
5. Why NMOS device conducts strong zero and weak one? BTL 3 Applying
6. Describe the lambda based design rules used for layout. BTL 2 Understanding
13. Discuss the limitations of the constant voltage scaling. BTL 2 Understanding
Define body effect and write the threshold equation including the body BTL 1 Remembering
14.
effect.
15. Design a 3 input NAND gate. BTL 6 Creating
16. List out second order effects of MOS transistor. BTL 1 Remembering
Page 2 of 13
Summarize the equation for describing the channel length modulation
18. BTL 2 Understanding
effect in NMOS transistor.
Justify the tunneling current is higher for NMOS transistors than PMOS
19. BTL 5 Evaluating
transistors with silica gate?
Consider the NMOS transistor in 180nm process with a nominal
20. threshold voltage of 0.4v and doping level of 8x1017cm-3. Propose the BTL 6 Creating
body voltage.
PART - B
Illustrate with necessary diagrams Electrical properties of MOS
1. BTL 4 Analyzing
transistor in detail. (13)
2. Describe the CMOS inverter and Derive the DC characteristics. (13) BTL 2 Understanding
Narrate in detail about the dynamic behaviour of MOSFET transistor
3. BTL 3 Applying
with neat diagram. (13)
i) Derive the drain current of MOS device in different operating regions.
(8)
4. BTL 6 Creating
ii) With neat diagram formulate the n-well and channel formation in
CMOS process. (5)
5. Mention in detail about second order effects in MOS transistor. (13) BTL 2 Understanding
Summarize the following:
6. i) CMOS process enhancements (8) BTL 2 Understanding
ii) Layout design rules. (5)
i) Examine the equation for threshold voltage of a MOS transistor in
terms of flat band voltage using necessary explanations and derivations.
7. (8) BTL 1 Remembering
ii) State the step by step derivation of threshold voltage equation of
NMOS transistor with and without body effect. (5)
i) Explain the design techniques that are used for large fan-in devices to BTL 5 Evaluating
reduce delay (8)
8.
ii) Evaluate the principle of SOI technology with neat diagram and list
out its advantages and disadvantages. (5)
i) Draw the small signal model of device during cut-off, linear and
saturation region. (8)
9. BTL 4 Analyzing
ii) Examine a brief note on CMOS fabrication steps with necessary
diagram. (5)
i) Draw the stick diagram and layout diagram using the function
Y ( A B C ).D of CMOS compound gate. (8)
10. ii) Label the necessary layout diagram for the design of Universal gates. BTL 1 Remembering
(5)
i) Analyze the different steps involved in n-well CMOS fabrication
11. process with neat diagrams. (8) BTL 4 Analyzing
ii) Explain the noise margin for a CMOS inverter. (5)
Page 3 of 13
i) Construct the design rules for a CMOS inverter, in detail with a neat
layout. (8)
12. ii) Apply the mathematical equations that can be used to model the drain BTL 3 Applying
current and diffusion capacitance of MOS transistors. (5)
i) List out the goals of CMOS technology scaling. Explain how common
electric field scaling is superior than constant voltage scaling.
13. (7) BTL 1 Remembering
ii) Derive the expression to obtain the minimum delay through the chain
of CMOS inverter. (6)
i) Define and derive the trans conductance of NMOS transistor. (8)
14. ii) Write down the equations of the small signal model of an NMOS BTL 1 Remembering
transistor. (5)
PART – C
With necessary illustrations explain the layout design rules and draw the
1. layout diagram for four input NAND and NOR gate. (15) BTL 5 Evaluating
Explain in detail about the need of scaling, scaling principles and effect
2. of scaling on MOSFET device parameters. (15) BTL 5 Evaluating
i. Derive an expression for Vin of a CMOS inverter to achieve the
3. condition Vin=Vout. What should be the relation for βn=βp. (10) BTL 6 Creating
ii. Explain the latch up conditions in CMOS circuits. (5)
Consider the NMOS transistor in a 180nm process with a nominal
threshold voltage of 0.4V and doping level of 8 X 1017 cm-3. The body
4. of the transistor is tied to ground with a substrate contact. How much BTL 6 Creating
the threshold change at room temperature if the source is at 1.1V instead
of 0V? ε si=11.7 X 8.85x10-14F/cm. (15)
UNIT II – COMBINATIONAL LOGIC CIRCUITS
Examples of Combinational Logic Design, Elmore’s constant, Pass transistor Logic, Transmission
gates, static and dynamic CMOS design, Power dissipation – Low power design principles.
PART – A
Q. BT
Questions Competence
No Level
1. Describe path logical effort. BTL 1 Remembering
2. List the methods to reduce dynamic power dissipation. BTL 1 Remembering
3. Calculate logical effort and parasitic delay of n input NOR gate. BTL 3 Applying
4. Distinguish between static and dynamic CMOS design. BTL 2 Understanding
5. Explain pass transistor logic. BTL 4 Analyzing
6. Design an AND gate using pass transistor. BTL 6 Creating
7. Justify why the interconnect increase the circuit delay. BTL 4 Analyzing
8. Define critical path. BTL 1 Remembering
9. What is Elmore constant? BTL 1 Remembering
10. State the advantages of transmission gates. BTL 4 Analyzing
Page 4 of 13
Determine the discharge time of the circuit shown in below figure when
switch A is closed. Assume CL and internal capacitances C1 and C2 are
charged initially. Let CL=C1=C2=C.
15. Illustrate the method for reducing energy consumption of a logic circuit. BTL 3 Applying
16. Discuss the advantages of power reduction in CMOS circuits. BTL 2 Understanding
Point out the factors that cause static power dissipation in CMOS
17. BTL 2 Understanding
circuits.
18. Mention the sources of power dissipation. BTL 1 Remembering
19. Draw the pseudo NMOS logic gate. BTL 3 Applying
If load capacitance increases, What will happen to CMOS power
20. BTL 5 Evaluating
dissipation?
PART – B
Analyze the following combinational circuits using the CMOS logic:
i) Two input NOR gate. (3)
1. ii) Parity generator (3) BTL 4 Analyzing
iii) Two input NAND gate. (3)
iv) Multiplexers (4)
Describe in detail about
i) Delay estimation. (5)
2. ii) Logical effort. (4) BTL 2 Understanding
iii) Transistor sizing. (4)
With supporting diagrams, give notes on :
i) Static CMOS (4)
3. ii) Bubble pushing (4) BTL 1 Remembering
iii) Compound gates. (5)
Page 5 of 13
i) Investigate the logical expression in the form of basic gates using
CMOS logic, F= AB + CD. (6)
ii) Estimate least delay and determine input capacitance of each stage for
the logic network shown in figure, which may output of the network is
loaded with a capacitance represent the critical path of a more complex
BTL 4 Analyzing
logic block. The output of the network is loaded with a capacitance
4. which is 5 times larger than the input capacitance of the first gate, which
is a minimum-sized inverter. (7) BTL 5 Evaluating
1 b c
a
5
Page 6 of 13
Discuss with necessary diagrams and expressions:
14. i)Static power dissipation in CMOS circuits (6) BTL 2 Understanding
ii)Dynamic power dissipation in CMOS circuits (7)
PART – C
Q. BT
Questions Competence
No. Level
i) Implement an EXOR gate using CMOS logic. (7)
ii) Evaluate the delay of the fanout-of-4(FO4) inverter. Assume the
inverter is constructed in180nm process with τ=15ps. (8)
1. BTL 5 Evaluating
Page 7 of 13
6. Define Clock skew BTL 1 Remembering
7. Summarize the operation modes of NORA logic. BTL 2 Understanding
8. Determine the property of clock overlap in the registers. BTL 5 Evaluating
9. What is Klass semi dynamic flip flop? BTL 1 Remembering
10. Recall the methods of sequencing static circuit. BTL 1 Remembering
11. Write about pipelining? BTL 2 Understanding
12. Compare registers and latches. BTL 4 Analyzing
13. Explain simple synchronizer circuit. BTL 4 Analyzing
Formulate hold-time problem which would occur, If a data path
14. BTL 6 Creating
circuits uses pulsed latches in place of flip flops.
15. Justify the advantages and applications of self-time pipelined circuits. BTL 5 Evaluating
16. Design a 1-transistor DRAM cell. BTL 6 Creating
17. Illustrate the merits and demerits of 3 T DRAM over 1 T DRAM BTL 3 Applying
18. Give the properties of TSPC. BTL 2 Understanding
19. Why pipelining is need for of sequential circuits? BTL 1 Remembering
20. Draw the schematic of dynamic edge-triggered register. BTL 3 Applying
PART – B
Explain the memory architecture and its control circuits in
1. BTL 4 Analyzing
detail. (13)
Discuss about CMOS register concept and design master slave
2. triggered register, explain its operation with overlapping BTL 2 Understanding
period. (13)
Write about the latches and flip-flops in design methodology of
3. BTL 1 Remembering
sequential circuit design. (13)
i) State and explain the Klass semi dynamic flip flops and differential
BTL 1 Remembering
4. Flip flops. (7)
BTL 3 Applying
ii) Illustrate the enabled latches and flip flops. (6)
i) Design a D-latch using transmission gate. (7)
BTL 6 Creating
5. ii) Evaluate a 1-bit dynamic inverting and non-inverting register using
BTL 5 Evaluating
pass transistor. (6)
i) Draw and explain the operation of conventional CMOS pulsed and
BTL 3 Applying
6. resettable latches. (7)
BTL 5 Evaluating
ii) Estimate about sequencing dynamic circuits. (6)
i) Compare the sequencing in traditional Domino and Skew tolerant
BTL 4 Analyzing
Domino circuit with neat diagrams. (7)
7.
ii) Elucidate a floating gate transistor and its programming
BTL 3 Applying
methodology. (6)
Describe about memory architecture and memory control circuits.
8. BTL 2 Understanding
(13)
Give a brief note on:
9. i)CMOS S-RAM cell and Dynamic RAM cell. (7) BTL 1 Remembering
ii) 4T and 6T SRAM cell structures (6)
Page 8 of 13
i) Consider a flip flop built from a pair of transparent latches using
non overlapping clocks. Determine the set-up time, hold time and
BTL 4 Analyzing
clock-to-Q-delay of the flip flops in terms of the latch timing
10.
parameters and tnonoverlap. (7)
BTL 6 Creating
ii)Design a 2 input CVSL AND/NAND gate and a 3 input CVSL
OR/NOR gate. (6)
Write Short notes on :
11. i)True Single phase clocked register (7) BTL 1 Remembering
ii) NORA- CMOS pipelined latches (6)
Illustrate with necessary diagrams the design and organization of
12. BTL 2 Understanding
CAM. (13)
i) Explain in detail about Low power circuits. (10)
13. ii) Differentiate between synchronous and asynchronous sequential BTL 4 Analyzing
circuits. (3)
Demonstrate the maximum and minimum delay constraints needed
14. BTL 3 Applying
to design sequential circuits. (13)
PART – C
Discuss about the design of sequential dynamic circuits and its
1. BTL 6 Creating
pipelining concept. (15)
Explain the timing basics and clock distribution techniques in
2. BTL5 Evaluate
synchronous design in detail. (15)
3. Elaborate about various static latches and registers. (15) BTL 6 Creating
4. Interpret the operation of Master Slave edge triggered register. (15) BTL5 Evaluating
Data path circuits, Architectures for ripple carry adders, carry look ahead adders, High speed
adders, accumulators, Multipliers, dividers, Barrel shifters, speed and area trade-off.
PART – A
BT
Q.No Questions Competence
Level
Obtain the critical path delay of 4 bit ripple carry adder and draw
1. BTL6 Creating
the circuit.
Summarize about carry propagation delay. Mention its effect in
2. BTL2 Understanding
circuits.
3. List out the components of Data path BTL 1 Remembering
Why is barrel Shifters very useful in the designing of arithmetic
4. BTL2 Understanding
circuits?
Interpret a partial product selection table using modified 3-bit
5. BTL 5 Evaluating
booth’s recoding multiplication.
6. What is latency? BTL 1 Remembering
7. Draw the structure of 4 X 4 barrel shifter. BTL 3 Applying
List the advantages and disadvantages of full adder design using
8. BTL 1 Remembering
static CMOS.
Analyze the concept of Dynamic voltage scaling and list its
9. BTL 4 Analyzing
advantages.
Page 9 of 13
10. Define Clock gating. BTL 1 Remembering
Create a schematic for Sleep transistors used on both supply and
11. BTL6 Creating
ground.
12. Examine the need of VTCMOS BTL 4 Analyzing
13. Give the applications of high speed adder BTL 2 Understanding
14. Outline the inverting property of full adder. BTL 4 Analyzing
15. How to design a high speed adder? BTL 3 Applying
16. Write the full adders output in terms of propagate and generate. BTL 1 Remembering
Classify Power optimization techniques for latency and
17. BTL 3 Applying
throughput constrained design.
18. Write the principle of any one fast multiplier? BTL1 Remembering
19. Sketch a Manchester carry gate. BTL2 Understanding
20. Elaborate the Concept of Transmission gate full adder. BTL 5 Evaluating
PART – B
i) Describe ripple carry adder and derive the expression for worst
1. case delay. (10) BTL 1 Remembering
ii) State the features of Carry Bypass adders. (3)
Examine the concept of carry look ahead adder and discuss its
2. BTL 4 Analyzing
types. (13)
Outline the operation of a basic 4 bit adder. Describe the different
3. BTL 1 Remembering
approaches of improving the speed of the adder. (13)
Illustrate the concepts of monolithic and logarithmic look ahead
4. BTL 3 Applying
adder. (13)
Define shifter and give a short note on
5. i) Barrel shifter. (7) BTL 1 Remembering
ii) Logarithmic shifter. (6)
i) Demonstrate how to reduce the number of generated partial
products by half. (7)
6. BTL3 Applying
ii) Identify and explain the concept of Dynamic Voltage Scaling.
(6)
Compute the efficiency of carry look ahead adder over normal
7. BTL 6 Creating
full adder. Give the comparative study of each. (13)
Summarize the methods involved in run time power
8. BTL2 Understanding
management. (13)
Evaluate the steps involved in designing an 8 bit Brent-Kung
9. BTL5 Evaluating
adder.
10. Give a note on linear carry select adder. (13) BTL 2 Understanding
Examine the operation of :
11. i)Static CMOS adders. (7) BTL 4 Analyzing
ii)Mirror adder (6)
Analyze the operation of booth multiplication with suitable
12. examples. Justify how booth algorithms speed up the BTL 4 Analyzing
multiplication process. (13)
Page 10 of 13
13. Discuss the data paths in digital processor architectures. (13) BTL 2 Understanding
With neat sketch show the principle of operation of two
14. BTL 1 Remembering
multiplier circuit (13)
PART – C
i) Construct 4 X 4 array type multiplier and find its critical path
delay. (8)
1. BTL5 Evaluating
ii) Implement a 4 input and 4 output barrel shift adder using
NMOS logic. (7)
Design a multiplier for 5 bit by 3 bit. Explain its operation and
2. BTL6 Creating
summarize the number of adders. (15)
Explain a Modified Booth algorithm with a suitable example.
3. BTL5 Evaluating
(15)
4. Discuss the steps in designing restoring division circuit. (15) BTL6 Creating
PART – A
BT
Q. No Questions Competence
Level
1. 1. What is role of cell library in ASIC design? BTL 1 Remembering
Classify the implementation approaches for digital integrated
2. BTL 4 Analyzing
circuits.
List out the advantages and disadvantages of cell based design
3. BTL 1 Remembering
methodology.
4. Narrate about feed-through cells and state their uses. BTL 3 Remembering
5. Interpret the feature Macro cells. BTL 3 Applying
6. Give a note on Tape out of chip. BTL 2 Understanding
7. State the features of full-custom design. BTL 1 Remembering
8. Differentiate between semi-custom and full custom design. BTL 4 Analyzing
9. Describe about standard cell based ASIC design? BTL 1 Remembering
10. Define Fuse based FPGA. BTL 1 Remembering
11. Name the two different types of routing. BTL 2 Understanding
12. Develop an array based architecture used in Altera MAX series. BTL 6 Creating
13. Design a primitive gate array cell. BTL 6 Creating
Compare between Xilinx CLB interconnect and Altera LAB
14. BTL 4 Analyzing
interconnect.
Summarize the functions of Programmable Interconnect Points
15. in FPGA. BTL 5 Evaluating
Page 11 of 13
Identify the issues in implementing Boolean functions on array of
16. BTL 2 Understanding
cells.
17. Show the design steps of Semicustom design flow diagram. BTL 5 Applying
18. Illustrate Composition of generic digital processor. BTL 3 Evaluating
19. Outline the steps for ASIC design flow. BTL 2 Understand
20. Write the various ways of routing procedure. BTL 1 Remembering
PART – B
(i) List and explain the components that makeup the cell based
1. design methodology. (8) BTL 1 Remembering
(ii) Give a short note on programming of PAL. (5)
2. Classify the various types of ASIC with neat diagram. (13) BTL 2 Understanding
(i)Summarize the Blocks involved in digital processor. (8)
3. (ii)Define and explain the approaches of programmable wiring. BTL 1 Remembering
(5)
(i)Illustrate the concepts of Mask programmable arrays. (10)
4. (ii)Identify the components involved in constructing a voltage BTL 3 Applying
Output Macrocell. (3)
5. Explain CLB of Xilinx 4000 architecture. (13) BTL 4 Analyzing
Examine the interconnect architectures of
i)6. (i)Altera Max series. (7) BTL 4 Analyzing
ii) (ii)Xilinx XC40XX series. (6)
(i)Identify and Explain the FPGA block structure along its
components. (7)
7. BTL 1 Remembering
(ii) Mention in detail the techniques involved in Switch box
programmable wiring. (6)
(i)Discuss the types of FPGA routing techniques. (7)
8. BTL 2 Understanding
(ii)Demonstrate the types of ASICS. (6)
(i) (i)Design an LUT-Based Logic Cell. (7)
9. BTL 6 Creating
(ii) (ii)Elaborate the Classification of prewired arrays. (6)
(i) Compare two types of Macrocells. (6)
10. BTL 4 Analyzing
(ii) Inspect the data paths in digital processor architectures. (7)
11. Draw and explain the building blocks of FPGA. (13) BTL 2 Understanding
(i)Realize the function F=A.B+(B’.C)+D using ACTEL
12. (ACT-1) FPGA. (5)
BTL 3 Applying
(ii)Draw the flow chart of digital circuit design techniques. (4)
(iii) Differentiate between Hazard Macro and Macro. (4)
Explain the classification of ASIC with necessary block diagram.
13.
(i) Full Custom ASIC (7) BTL 5 Evaluating
(ii) Semi-Custom ASIC (6)
Write short notes on
14. (i) Xilinx LCA (6) BTL 1 Remembering
(ii) Altera Max (7)
Page 12 of 13
PART – C
Page 13 of 13