Basic Power Electronics

Components
 SI Units
Quantity Quantity symbol Unit Unit symbol
Capacitance C Farad F
Charge Q Coulomb C
Current I Ampere A
Electromotive force E Volt V
Frequency f Hertz Hz
Inductance (self) L Henry H
Period T Second s
Potential difference V Volt V
Power P Watt W
Resistance R Ohm Ω
Temperature T Kelvin K
Time t Second s
 Common Prefixes
Prefix Name Meaning (multiply by)
T tera 1012
G giga 109
M mega 106
k kilo 103
m milli 10-3
 micro 10-6
n nano 10-9
p pico 10-12
Resistors, Capacitors and Inductors
• Resistors provide resistance
– they oppose the flow of electricity
– measured in Ohms ()
• Capacitors provide capacitance
– they store energy in an electric field
– measured in Farads (F)
• Inductors provide inductance
– they store energy in a magnetic field
– measured in Henry (H)
Circuit Symbols
 Diodes
It is represented by the following symbol,
where the arrow indicates the direction of
positive current flow.
P-N Junction
 Forward Bias and Reverse Bias
• Forward Bias : Connect positive of the Diode
to positive of supply…negative of Diode to
negative of supply
• Reverse Bias: Connect positive of the Diode to
negative of supply…negative of diode to
positive of supply.
I-V Characteristics of Practical Diode
• Turn-on and breakdown voltages for a silicon
device
 Shockley Equation
  vD   kT
iD  I s exp   1 VT 
  nVT   q
VT  26 mV
Is is the saturation current ~10 -14
Vd is the diode voltage
n – emission coefficient (varies from 1 - 2 )
k = 1.38 × 10–23 J/K is Boltzmann’s constant
q = 1.60 × 10–19 C is the electrical charge of an
electron.
At a temperature of 300 K, we have
Physical structures
• Silicon diodes
– generally have a turn-on voltage of about 0.5 V
– generally have a conduction voltage of about 0.7 V
– have a breakdown voltage that depends on their
construction
• perhaps 75 V for a small-signal diode
• perhaps 400 V for a power device
– have a maximum current that depends on their
construction
• perhaps 100 mA for a small-signal diode
• perhaps many amps for a power device
• Schottky diodes
– formed by the junction between a layer of metal
(e.g. aluminium) and a semiconductor
– action relies only on majority charge carriers
– much faster in operation than a pn junction diode
– has a low forward voltage drop of about 0.25 V
– used in the design of high-speed logic gates
 Zener diodes
• A Zener diode is a pn silicon junction diode that is
reverse biased and with the supply voltage sufficient
to produce the ‘avalanche’ or ‘breakdown’ effect.
• A zener diode must be used in conjunction with a
‘current-limiting’ resistor to keep the current flow
through the diode to a safe level.
• A zener diode is used to produce a stable voltage
from a supply which is fluctuating.
• Zener diodes
– uses the relatively constant
reverse breakdown voltage
to produce a voltage
reference
– breakdown voltage is called
the Zener voltage, VZ
– output voltage of circuit
shown is equal to VZ despite
variations in input voltage V
– a resistor is used to limit
the current in the diode
V/I CHARACTERISTICS
 Half-Wave Rectifier

• A very common application of diodes is half-

wave rectification, where either the positive or
negative half of the input is blocked.
19
Complete Full-Wave Rectifier
• Catch diode
– used when switching
inductive loads
– the large back e.m.f.
can cause problems
such as arcing in switches
– catch diodes provide a low impedance path across
the inductor to dissipate the stored energy
– the applied voltage reverse-biases the diode which
therefore has no effect
– when the voltage is removed the back e.m.f.
forward biases the diode which then conducts
 Diode Ratings
Peak inverse voltage (PIV)

Maximum forward current (IF)

Maximum forward voltage drop (VF)

Reverse leakage current (IR)

Diode handling and installation
Diodes are polarized and must be installed in with correct
orientation.

Many diodes are modestly susceptible to ESD damage, so

normal ESD precautions should be taken.

Mechanical stress due to lead bending should be

minimized.
Thyristor

Symbol of
Thyristor
 Thyristors

• Most important type of power semiconductor

device.
• Have the highest power handling
capability.they have a rating of 5000V / 6000A
with switching frequencies ranging from 1KHz
to 20KHz.
• Is inherently a slow switching device
compared to BJT or MOSFET.
• Used as a latching switch that can be turned
on by the control terminal but cannot be
turned off by the gate.
 Structure
Gate Cathode




+ 19 -3 + 19 -3
n 10 cm n 10 cm 10m
J3 17 -3
-
p 10 cm 30-100m
J2
n
–
10
13
-5 x 10
14
cm
-3 50-1000 m


J1
p 10
17
cm
-3 30-50m
+ 19 -3
p 10 cm

Anode
Device Operation

Simplified model of a
thyristor
V-I Characteristics
Effects of gate current
 VAK
tC
tq

IA
di
Commutation
Anode current dt
begins to
decrease Recovery Recombination

t1 t2 t3 t4 t5

tq=device off time

Turn-off
Characteristics
trr tgr
tc =circuit off time
tq
tc
 Thyristor Conduction
ig v
ia
s

+ + wt
vs vo vo
_ _

wt

ig

a wt
 Methods of Thyristor Turn-on
• Thermal Turn-on.
• High Voltage.
• Gate Current.
• dv/dt.
 Thyristor Types
• Phase-control Thyristors (SCR’s).
• Fast-switching Thyristors (SCR’s).
• Gate-turn-off Thyristors (GTOs).
• Bidirectional triode Thyristors (TRIACs).
 Phase Control Thyristor
• These are converter thyristors.
• The turn-off time tq is in the order of 50 to
100sec.
• Used for low switching frequency.
• Commutation is natural commutation
• On state voltage drop is 1.15V for a 600V
device.
 Fast Switching Thyristors
• Also called inverter thyristors.
• Used for high speed switching applications.
• Turn-off time tq in the range of 5 to 50sec.
• On-state voltage drop of typically 1.7V for
2200A, 1800V thyristor.
• High dv/dt and high di/dt rating.
Bidirectional Triode Thyristors
(TRIAC)
Triac Characteristics
 Gate Turn-off Thyristors
• Turned on by applying positive gate signal.
• Turned off by applying negative gate signal.
• On state voltage is 3.4V for 550A, 1200V GTO.
• Controllable peak on-state current ITGQ is the
peak value of on-state current which can be
turned-off by gate control.
 Advantages over SCRs
• Elimination of commutating components.
• Reduction in acoustic & electromagnetic noise
due to elimination of chokes.
• Faster turn-off, therefore can be used for
higher switching frequencies.
• Improved efficiency of converters.
 Advantages over BJTs
• Higher voltage blocking capabilities.
• High on-state gain.
• High ratio of peak surge current to average
current.
• A pulsed gate signal of short duration only is
required.
 Disadvantages of GTOs
• On-state voltage drop is more.
• Due to multi cathode structure higher gate
current is required.
• Gate drive circuit losses are more.
• Reverse blocking capability is less than its
forward blocking capability.
Bipolar Transistor
 TRANSISTOR AS A SWITCH

Transistors may be used as switching elements to control DC

power to a load.
The switched (controlled) current goes between emitter and
collector, while the controlling current goes between
emitter and base.
When a transistor has zero current through it, it is said to be
in a state of cutoff (fully non conducting).
When a transistor has maximum current through it, it is
said to be in a state of saturation (fully conducting).
TRANSISTOR AS A SWITCH
TRANSISTOR AS AN AMPLIFIER
TRANSISTOR AS AN AMPLIFIER
Field Effect Transistor (FET)
FET: N-Channel
FET: P-Channel
FET: As a switch
MOSFET
Semiconductor Cross-section of IGBT
IGBT
 Advantages of IGBT
• Combines the advantages of BJT & MOSFET
• High input impedance like MOSFET
• Voltage controlled device like MOSFET
• Simple gate drive, Lower switching loss
• Low on state conduction power loss like BJT
• Higher current capability & higher switching speed
than a BJT. ( Switching speed lower than MOSFET)
 Applications of IGBT
• ac and dc motor controls.
• General purpose inverters.
• Uninterrupted Power Supply (UPS).
• Welding Equipments.
• Numerical control, Cutting tools.
• Robotics & Induction heating.
 Example of Inverter Grade Thyristor
Ratings
• V / I rating: 4500V / 3000A.
• Max. Frequency: 20KHz.
• Switching time: 20 to 100sec.
• On state resistance: 0.5m.
 Example of Triac Ratings
• Used in heat / light control, ac motor control
circuit
• V / I rating: 1200V / 300A.
• Max. Frequency: 400Hz.
• Switching time: 200 to 400sec.
• On state resistance: 3.6m.
 Example of Power Transistor Ratings
• PT ratings go up to 1200V / 400A.
• PT normally operated as a switch in CE config.
• Max. Frequency: 400Hz.
• Switching time: 200 to 400sec.
• On state resistance: 3.6m.
Example of Power MOSFET Ratings
• Used in high speed power converters like inverters &
choppers.
• Ratings up to 1000V / 100A.
• Example: MOSFET 800V / 7.5A rating.
• Max. Frequency: 100KHz.
• Switching time: 1.6sec.
• On state resistance: 1.2m.
 Example of IGBT Ratings
• Used in high voltage / current & high frequency
switching power applications (Inverters, SMPS).
• Example: IGBT 2500V / 2400A.
• Max. Frequency: 20KHz.
• Switching time: 5 to sec.
• On state resistance: 2.3m.
Designing – Heat Sinking
Power Semiconductor Devices, their
Symbols & Characteristics
DEVICE SYMBOLS & CHARACTERISTICS
 Power Switches: Power Ratings

1GW
Thyristor
10MW

10MW GTO

1MW

100kW IGBT

10kW
MOSFET
1kW
100W
10Hz 1kHz 100kHz 1MHz 10MHz
 Thy BJT FET GTO IGBT IGCT
Avail- Early Late 70s Early Mid 80s Late 80s Mid 90’s
abilty 60s 80s
State of Mature Mature Mature/ Mature Rapid Rapid
Tech. improve improve improvem
ent
Voltage 5kV 1kV 500V 5kV 3.3kV 6.5kV
ratings

Current 4kA 400A 200A 5kA 1.2kA 4kA

ratings

Switch na 5kHz 1MHz 2kHz 100kHz 1kHz

Freq.

On-state 2V 1-2V I* Rds 2-3V 2-3V 3V

Voltage (on)
Drive Simple Difficult Very Very Very Simple
Circuit simple difficult simple
Comm-ents Cannot Phasing Good King in Best Replacing
turn off out in new performan very high overall GTO
using gate product ce in high power performanc
signals freq. e.