Ordering number : ENN0000

TT2148
NPN Triple Diffused Planar Silicon Transistor

TT2148

Switching Regulator Applications

Preliminary

Features Package Dimensions

• High breakdown voltage and high reliability. unit : mm
• Fast switching speed. 2022A
• Wide ASO.
[TT2148]
• Adoption of MBIT process.
15.6 3.2 4.8
14.0 2.0

3.5
2.6

20.0
1.2
15.0
1.3
1.6
2.0

20.0
0.6
1.0

1 2 3
1 : Base
0.6
2 : Collector

1.4
3 : Emitter
Specifications 5.45 5.45 SANYO : TO-3PB
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 500 V
Collector-to-Emitter Voltage VCEO 400 V
Emitter-to-Base Voltage VEBO 7 V
Collector Current IC 12 A
Collector Current (Pulse) ICP PW≤300µs, Duty Cycle≤10% 20 A
Base Current IB 3.5 A
2.5 W
Collector Dissipation PC
Tc=25°C 80 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=400V, IE=0 10 µA
Emitter Cutoff Current IEBO VEB=5V, IC=0 10 µA
Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51402 TS IM SAWADA No.0000-1/4
 TT2148

Continued from preceding page.

Ratings
Parameter Symbol Conditions Unit
min typ max
hFE1 VCE=5V, IC=1.2A 20* 50*
DC Current Gain hFE2 VCE=5V, IC=6A 10
hFE3 VCE=5V, IC=1mA 10
Gain-Bandwidth Product fT VCE=10V, IC=1.2A 20 MHz
Output Capacitance Cob VCB=10V, f=1MHz 120 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=6A, IB=1.2A 0.8 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=6A, IB=1.2A 1.5 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=1mA, IE=0 500 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=5mA, RBE=∞ 400 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 7 V
Turn-ON Time ton IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V 0.5 µs
Storage Time tstg IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V 2.5 µs
Fall Time tf IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V 0.3 µs
* : The hFE1 of the TT2148 is classified as follows.
Rank M N
hFE 20 to 40 30 to 50

Switching Time Test Circuit

IB1
OUTPUT
IB2
INPUT
PW=20µs
RB RL
D.C.≤1%
VR
50Ω
+ +
100µF 470µF

VBE= --5V VCC=200V

IC -- VCE IC -- VBE(on)
10 12
mA 800mA VCE=5V
9 900 700mA
600mA
A

10
0m

8 500mA
Collector Current, IC -- A
Collector Current, IC -- A

100

7 400mA
8
6 300mA

5 200mA 6

4
100mA 4
3

2
2
1
IB=0
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-to-Emitter Voltage, VCE -- V IT05069 Base-to-Emitter ON-State Voltage, VBE(on) -- V IT05070
VBE(sat) -- IC hFE -- IC
10 100
7 IC / IB=5 VCE=5V
7
Saturation Voltage, VBE(sat) -- V

3 5
DC Current Gain, hFE

3
1.0
Base-to-Emitter

7
2
5

2 10

0.1 7
0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2
Collector Current, IC -- A IT05071 Collector Current, IC -- A IT05072

No.0000-2/4
 TT2148
VCE(sat) -- IC Forward Bias ASO
1.0 5

7
IC / IB=5 3 ICP=20A †50 s
2
Saturation Voltage, VCE(sat) -- V

10
5 10 IC=12A

0s
7 DC

Collector Current, IC -- A
5 op
3 era
tio

1m
3
n

s
10
2
2

ms
Collector-to-Emitter

1.0

S/
7

B
5

Li
0.1

m
3

ite
2

d
7
0.1
5 7
5
3
3 Tc=25¡C
2
Single pulse
2 0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7
Collector Current, IC -- A IT05073 Collector-to-Emitter Voltage, VCE -- V IT05074
Reverse Bias ASO PC -- Ta
5 3.0

3
ICP
2 2.5

Collector Dissipation, PC -- W
Collector Current, IC -- A

10
7 2.0
5
No
3 he
1.5 at
2 sin
k
1.0
1.0
7
5

3 0.5
Tc=25¡C
2
IB2= --1.8A Const
0.1
L=100 H 0
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Sustain Voltage, VCEX(sus) -- V IT05075 Ambient Temperature, Ta -- ¡C IT05076
PC -- Tc
90

80
Collector Dissipation, PC -- W

70

60

50

40

30

20

10

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- ¡C IT05077

No.0000-3/4
 TT2148

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2002. Specifications and information herein are subject
to change without notice.

PS No.0000-4/4