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BF254 BF255

This document provides specifications for the BF254 and BF255 NPN silicon RF transistors. It includes maximum ratings, thermal resistance, electrical characteristics such as DC current gain and transition frequency, and typical Y parameters. The transistors are suitable for use in AM and FM radio frequency stages.

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142 views3 pages

BF254 BF255

This document provides specifications for the BF254 and BF255 NPN silicon RF transistors. It includes maximum ratings, thermal resistance, electrical characteristics such as DC current gain and transition frequency, and typical Y parameters. The transistors are suitable for use in AM and FM radio frequency stages.

Uploaded by

rrr2013
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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i, Una.

20 STERN AVE. TELEPHONE: (973) 376-2922


SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

NPN Silicon RF Transistors BF254


BF255
For AM and FM stages

Type Marking Pin Configuralton Package1)


1 2 3
BF254 — C E B TO-92
BF255

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 20 V
Collector-base voltage VCES 30
Emitter-base voltage VEBO 5
Collector current 7c 30 mA
Total power dissipation, TA s 45 'C PM 250 mW
Junction temperature Ti 150 'C
Storage temperature range r«o -65, .. + 150

Thermal Resistance
Junction - ambient 5420 K/W

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice infomation famished by N; Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
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BF254
BF255

Electrical Characteristics
at TA = 25 'C, unless otherwise specified.
Parameter Symbol Values Unit
mln. typ. max.

DC Characteristics
_
DC current gain Are
/c = 1 mA, VCE - 10 V
BF254 65 — 220
BF255 35 - 130
Base-emitter voltage VBE — 0.68 — V

AC Characteristics
Transition frequency ft MHz
/c . 1 mA, VCE « 10 V, /= 100 MHz
BF254 - 260 -
BF255 220
Collector-base capacitance Cob — 0.6 — PF
VCB - 10 V, VBE = 0 V,/= 1 MHz
Collector-emitter capacitance Co — 0.6 —
Vets = 10 V, VBE = 0 V,/= 1 MHz
Noise figure F dB
/c = 1 mA, Vce = 10 V
/=1 MHz,£.= 1.5mSi> - 1.2 -
/=100MHz,s.= 10mSi> 3.8

Y parameters, typical values, /c = 10 V


/ *» ftii Iy 1 3 | <p<2 \y»\S <p* *a ba
MHz mS mS us deg. deg. us us
Common emitter
0.45 8F 254 0.3 0.06 1.7 -90 38 0 3.2 3.4
BF255 0.45 0.08 1.7 -90 38 0 2.7 3.4
10.7 BF254 0.4 1.5 41 -90 37 -10 4 8.1
BF255 0.5 1.75 41 -90 37 -10 3.8 8.1
Common base
100 BF255 34 -3.5 250 -85 33 150 18 700
') gt = generator conductance

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This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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