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Tutorial 1 Questions

This document contains 8 problems related to semiconductor devices and circuits: 1) Calculate the drift current in a p-type semiconductor given the applied electric field, conductivity, and cross-sectional area. 2) Determine the required donor impurity concentration given a specified semiconductor conductivity. 3) Calculate the hole diffusion current density at various positions given the hole concentration and diffusion coefficient profiles. 4) Determine resistor values for a diode circuit to maintain a minimum current and maximum power dissipation over a range of supply voltages. 5) Calculate diode currents for two diodes in series given input voltages and resistor values. 6) Derive an expression relating the sinusoidal component of a diode voltage to an input signal voltage

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Aayush Rajput
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170 views

Tutorial 1 Questions

This document contains 8 problems related to semiconductor devices and circuits: 1) Calculate the drift current in a p-type semiconductor given the applied electric field, conductivity, and cross-sectional area. 2) Determine the required donor impurity concentration given a specified semiconductor conductivity. 3) Calculate the hole diffusion current density at various positions given the hole concentration and diffusion coefficient profiles. 4) Determine resistor values for a diode circuit to maintain a minimum current and maximum power dissipation over a range of supply voltages. 5) Calculate diode currents for two diodes in series given input voltages and resistor values. 6) Derive an expression relating the sinusoidal component of a diode voltage to an input signal voltage

Uploaded by

Aayush Rajput
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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1. The applied electric field in p-type silicon is E = 15 V/cm.

The semiconductor conductivity is


𝜎 = 2.2 (𝛺 − 𝑐𝑚)−1 and the cross sectional area is 𝐴 = 10−4 𝑐𝑚2 . Determine the drift current
in the semiconductor.

2. The required conductivity of a semiconductor material must be 𝜎 = 0.5 (𝛺 − 𝑐𝑚)−1 . What


must be the concentration of donor impurities in the semiconductor?

3. The hole concentration in the semiconductor is given by


𝑥
𝑝(𝑥) = 104 + 1015 exp (− ) 𝑥≥0
𝐿𝑝

The value of 𝐿𝑝 is 10 𝜇𝑚 . The hole diffusion coefficient is 𝐷𝑝 = 15 𝑐𝑚2 /𝑠 . Determine the hole
diffusion current density at (a) 𝑥 = 0, (𝑏)𝑥 = 10 𝜇𝑚 𝑎𝑛𝑑 (𝑐) 𝑥 = 30 𝜇𝑚 .

4. The cut-in voltage of the diode shown in the circuit in the Figure 1 is 𝑉𝛾 = 0.7 𝑉 . The diode is to
remain biased “on” for a power supply voltage in the range 5 ≤ 𝑉𝑃𝑆 ≤ 10𝑉 . The minimum
diode current is to be 𝐼𝐷(𝑚𝑖𝑛) = 2 𝑚𝐴 . The maximum power dissipated in the diode is to be no
mere than 10 𝑚𝑊 . . Determine appropriate values of 𝑅1 𝑎𝑛𝑑 𝑅2 .

Fig.1

5. Assume each diode in the circuit shown in the Figure 2 has a cut-in voltage of 𝑉𝛾 = 0.65 𝑉. (a)
The input voltage is 𝑉𝐼 = 5 𝑉 . Determine the value of 𝑅1 required such that 𝐼𝐷1 is one-half the
value of 𝐼𝐷2 . What are the values of 𝐼𝐷1 and 𝐼𝐷2 ? (b) If 𝑉1 = 8 𝑉 and 𝑅1 = 2 𝑘𝛺, determine
𝐼𝐷1 and 𝐼𝐷2 .

Fig.2
6. The diode in the circuit shown in the Figure 3 is biased with a constant current source 𝐼 . A
sinusoidal signal 𝑣𝑠 is coupled through 𝑅𝑠 and 𝐶. Assume that 𝐶 is large so that it acts as a short
circuit to the signal. (a) Show that the sinusoidal component of the diode voltage is given by
𝑉𝑇
𝑣0 = 𝑣𝑠 ( ).
𝑉𝑇 +𝐼𝑅𝑠

Fig.3

7. Consider the Zener diode circuit shown in Figure 4. The Zener breakdown voltage is 𝑉𝑍 = 5.6 𝑉
at 𝐼𝑍 = 0.1 𝑚𝐴, and the incremental Zener resistance is 𝑟𝑧 = 10 𝛺 . (a) Determine 𝑉𝑂 with no
load (𝑅𝐿 = ∞) (b) Find the change in the output voltage if 𝑉𝑃𝑆 changes by ±1𝑉 . (c) Find 𝑉𝑂 if
𝑉𝑃𝑆 = 10 𝑉 and 𝑅𝐿 = 2 𝑘𝛺.

Fig.4

8. Design a circuit to produce the characteristics shown in figure, where 𝑣𝑂 is an output voltage
and 𝑣𝐼 is the input voltage.

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