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SEMICONDUCTOR KTA1274

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.


B D
FEATURES
ᴌComplementary to KTC3227.

A
P DIM MILLIMETERS
DEPTH:0.2 A 7.20 MAX
B 5.20 MAX
C
C 0.60 MAX
MAXIMUM RATING (Ta=25ᴱ) S

G
Q D 2.50 MAX
K E 1.15 MAX
CHARACTERISTIC SYMBOL RATING UNIT F 1.27

R
G 1.70 MAX
Collector-Base Voltage VCBO -80 V F F H 0.55 MAX
J _ 0.50
14.00 +
Collector-Emitter Voltage VCEO -80 V H H H
K 0.35 MIN
L _ 0.10
0.75 +
Emitter-Base Voltage VEBO -5 V M E M M 4
N 25
Collector Current IC -400 mA O 1.25

D
1 2 3 L
H

O
P Φ1.50
Emitter Current IE 400 mA N N Q 0.10 MAX
R _ 0.50
12.50 +
1. EMITTER
Collector Power Dissipation PC 1 W S 1.00
2. COLLECTOR

Junction Temperature Tj 150 ᴱ 3. BASE

Storage Temperature Range Tstg -55ᴕ150 ᴱ


TO-92L

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 nA
Emitter-Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-5mA, IB=0 -80 - - V
hFE(1) (Note) VCE=-2V, IC=-50mA 70 - 240
DC Current Gain
hFE(2) VCE=-2V, IC=-200mA 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-200mA, IB=-20mA - - -0.4 V
Base-Emitter Voltage VBE VCE=-2V, IC=-5mA -0.55 - -0.8 V
Transition Frequency fT VCE=-10V, IC=-10mA - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 14 - pF
Note : hFE Classification O:70~140, Y:120~240.

1994. 5. 11 Revision No : 0 1/1

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