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BC237

This document provides specifications for the BC237/238/239 NPN epitaxial silicon transistor. It includes maximum ratings, electrical characteristics, and classifications for DC gain. The transistors can be used for switching and amplifier applications and have low noise.

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Fernanda Zapata
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154 views3 pages

BC237

This document provides specifications for the BC237/238/239 NPN epitaxial silicon transistor. It includes maximum ratings, electrical characteristics, and classifications for DC gain. The transistors can be used for switching and amplifier applications and have low noise.

Uploaded by

Fernanda Zapata
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS


• LOW NOISE: BC239 TO-92

ABSOLUTE MAXIMUM RATINGS (TA=25°°C)


Characteristic Symbol Rating Unit

Collector-Emitter Voltage VCES V


: BC237 50 V
: BC238/239 30
Collector-Emitter Voltage VCEO
: BC237 45 V
: BC238/239 25 V
Emitter-Base Voltage VEBO
: BC237 6 V
: BC238/239 5 V
Collector Current (DC) IC 100 mA
Collector Dissipation PC 500 mW
Junction Temperature TJ 150 °C
Storage Temperature T STG -55 ~ 150 °C
1. Collector 2. Base 3. Emitter

ELECTRICAL CHARACTERISTICS (TA=25°°C)

Characteristic Symbol Test Conditions Min Typ Max Unit

Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0


:BC237 45 V
: BC238/239 25 V
Emitter Base Breakdown Voltage BVEBO IE=1µA, IC=0
: BC237 6 V
: BC238/239 5 V
Collector Cut-off Current ICES
: BC237 VCE=50V, IB=0 0.2 15 nA
: BC238/239 VCE=30V, IB=0 0.2 15 nA
DC Current Gain hFE VCE=5V, IC=2mA 120 800
Collector-Emitter Saturation Voltage VCE (sat) IC=10mA, IB=0.5mA 0.07 0.2 V
IC=100mA, IB=5mA 0.2 0.6 V
Collector Base Saturation Voltage VBE (sat) IC=10mA, IB=0.5mA 0.73 0.83 V
IC=100mA, IB=5mA 0.87 1.05 V
Base Emitter On Voltage VBE (on) VCE=5V, IC=2mA 0.55 0.62 0.7 V
Current Gain Bandwidth Product fT VCE=3V, IC=0.5mA 85 MHz

VCE=5V, IC=10mA 150 250 MHz

Collector Base Capacitance CCBO VCB=10V, f=1MHz 3.5 6 pF


Emitter Base Capacitance CEBO VEB=0.5V, f=1MHz 8 pF
Noise Figure : BC237/238 NF VCE=5V, IC=0.2mA, 2 10 dB
: BC239 f=1KHz RG=2kohm 4 dB
: BC239 NF VCE=5V, IC=0.2mA 4 dB
RG=2kohm, f=30~15KHz

hFE CLASSIFICATION
Classification A B C

hFE 120-220 180-460 380-800

Rev. B

1999 Fairchild Semiconductor Corporation


BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ ISOPLANAR™
CoolFET™ MICROWIRE™
CROSSVOLT™ POP™
E2CMOSTM PowerTrench™
FACT™ QS™
FACT Quiet Series™ Quiet Series™
FAST® SuperSOT™-3
FASTr™ SuperSOT™-6
GTO™ SuperSOT™-8
HiSeC™ TinyLogic™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER


NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

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