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2 SC 1403

This document provides product specifications for the 2SC1403 silicon NPN power transistor from Inchange Semiconductor. It has a TO-3 package, is intended for audio frequency power amplifier applications, and has maximum ratings including a collector current of 8A and collector power dissipation of 70W. Key characteristics are a DC current gain of 30 and transition frequency of 10MHz when operated within the specified conditions.

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263 views3 pages

2 SC 1403

This document provides product specifications for the 2SC1403 silicon NPN power transistor from Inchange Semiconductor. It has a TO-3 package, is intended for audio frequency power amplifier applications, and has maximum ratings including a collector current of 8A and collector power dissipation of 70W. Key characteristics are a DC current gain of 30 and transition frequency of 10MHz when operated within the specified conditions.

Uploaded by

Gerson
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1403

DESCRIPTION
·With TO-3 package
·Wide area of safe operation

APPLICATIONS
·For audio frequency power amplifier
applications

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector

Absolute maximum ratings(Ta=℃)

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 160 V

VCEO Collector-emitter voltage Open base 100 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 8 A

PC Collector power dissipation TC=25℃ 70 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1403

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V

VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 2.5 V

ICBO Collector cut-off current VCB=160V; IE=0 0.1 mA

IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA

hFE DC current gain IC=3A ; VCE=4V 30

fT Transition frequency IC=0.5A ; VCE=10V 10 MHz

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1403

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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