Tidud04 PDF
Tidud04 PDF
1 Description 3 Features
The TIDA-00951 design provides a reference solution • Digitally Controlled Isolated Bidirectional DC-DC
for a 2-kW isolated bidirectional DC-DC converter Converter
capable of power transfer between a 400-V DC bus • Operates as Active Clamped Full Bridge Boost
and a 12- to 14-cell Lithium battery pack for use in Converter With ZVS For All Low-Voltage Switches
UPS, battery backup and power storage applications. at High Loads
This TI Design works as a >93% efficient, current fed, • Operates as Active Clamped Voltage Fed Buck
active clamped boost converter with ZVS in the Converter With Synchronous Rectification to
backup mode and voltage fed full-bridge batter charger Improve Efficiency When Charging Battery
with >93% efficiency in the charging mode. This TI • Wide Operating Range From 36- to 60-V Battery
Design has built-in protection for DC bus overcurrent and 300- to 400-V DC Bus
and overvoltage and battery overcurrent.
• Cost Optimized Design Using 100-V FET on Low-
Voltage Side, Eliminates Requirement for
2 Resources Paralleling Multiple FETs up to 2 kW
• Built-in Cold Start Procedure and Fast Mode
TIDA-00951 Design Folder
Transfer (< 100 µS) From Battery Charger to
SN6505B Product Folder
Backup Power Supply
CSD19536KCS Product Folder
• Onboard Isolated Communication Interface for
UCC27211A Product Folder
CAN, I2C, and RS-485
UCC27517A Product Folder
AMC1301 Product Folder
TMP300 Product Folder 4 Applications
LM4041A12 Product Folder • Server PSUs and Telecom Rectifiers
TPS62160 Product Folder • Uninterruptible Power Supplies (UPS)
TLV1117 Product Folder
• Industrial Power Supplies
OPA376 Product Folder
TIDA-01281 Design Folder
• Battery Chargers
TIDA-01141 Design Folder • Energy Storage Systems
TIDA-01159 Design Folder
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+5 V +12 V
TPS62160
+12V_ISO +5V_ISO +3.3 V
TLV1117-50 TLV1117-33
300- to TIDA-01141
400-V DC + 36-
UCC UCC UCC27517A 60-V
UCC UCC 27211A 27211A -
21520 21520 T1
CSD19536 TMP300
OPA376
LM4041A12
AMC1301
lB_LS
OPA376
IB_HS
C2000TM
RS-485 ISO3082
Digital Signal Processor
VB_sense
TMS32 OF28033
I 2C ISO1541
CAN ISO1050
TIDA-01281
An IMPORTANT NOTICE at the end of this TI reference design addresses authorized use, intellectual property matters and other
important disclaimers and information.
5 System Description
Most backup power equipment such as DC inverters, home inverters, industrial DC-UPS, and energy
storage banks require an exchange of power from the battery to the load and vice versa. Typical power-
system distribution architecture with battery backup is shown in Figure 1:
Power Solar Power, Wind
Conditioner Power, and Fuel Cells
PFC
Converter
During normal operation, the main DC bus is regulated between 300 and 400 V through the grid source of
a building, factory, or house. Alternatively, the DC bus can be powered through a renewable energy
source such as solar power generation or wind power generation, which is conditioned through a power
conditioner to feed the DC bus. The battery acts as an energy storage unit, and it can be charged either
through the grid or an external renewable energy source.
Conventionally, charging a battery through a DC bus and discharging the battery during power blackouts
are implemented with two unidirectional converters, each processing the power in one direction. With a
growing emphasis on compact and efficient power systems, there is increasing interest in using
bidirectional converters, especially in DC inverters, home inverters, and energy storage banks. A
bidirectional DC-DC converter, capable of bilateral power flow, provides the functionality of two
unidirectional converters in a single converter unit.
The TIDA-00951 design is an isolated bidirectional DC-DC converter designed to exchange the power
between a 300- to 400-V DC Bus and 48-V battery banks. The design has a full-bridge power stage on the
high-voltage (HV) side, which is isolated from a current-fed full-bridge stage on the low-voltage (LV) side.
During the presence of the DC bus (normal conditions), the design operates in buck mode and charges
the battery with constant current until the battery voltage is in regulated limits. During blackouts, the
design operates as the current-fed full-bridge converter to boost the power from a 48-V battery (36- to
60-V input) to the 380-V DC bus and supports the load with backup.
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The transition or change over time from the charge to backup mode is very critical for ensuring continuity
of power to the loads. The TIDA-00951 has transition time of less than 100 µs, which reduces the amount
of bulk capacitance needed for the system to provide power during the transition time.
This TI Design operates at peak efficiency of 93% in buck mode (as charger) and 94% in boost mode
(during discharge). The high discharge efficiency provides a high run time from the battery. Operating at a
high switching frequency of 100 kHz, the design has a compact form factor of 185 mm × 170 mm for the
power level of 2 kW.
The TIDA-00951 design is optimized for component count, cost, and performance. Various parameters of
the design like regulation, efficiency, output ripple, transition time, startup, and switching stress across the
devices were tested and documented in the following sections.
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6 System Overview
300- to TIDA-01141
400-V DC + 36-
UCC UCC UCC27517A 60-V
UCC UCC 27211A 27211A -
21520 21520 T1
CSD19536 TMP300
OPA376
LM4041A12
AMC1301
lB_LS
OPA376
IB_HS
C2000TM
RS-485 ISO3082
Digital Signal Processor
VB_sense
TMS32 OF28033
I 2C ISO1541
CAN ISO1050
TIDA-01281
6.2.1 CSD19536KCS
The CSD19536KCS is a 100-V NexFET™ MOSFET has a very low RDSON of 2.3 mΩ with an ultra-low Qg
and Qgd of 118 nC and 17 nC, respectively. In the TIDA-00951 design, five of these MOSFETs are used
on the battery side or LV side to form the LV full bridge and the active clamp circuit. Because the LV FET
is turned on at ZVS at high loads, the RDSON parameter becomes important in determining the loss on the
FET. The CSD19536KCS was chosen for its very low RDSON.
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6.2.2 UCC27211A
The UCC27211A is a robust 120-V half-bridge gate driver capable of delivering up to a 4-A source and
sink current for driving power MOSFETs. With very low pullup and pulldown resistances, this device
reduces the transition time of the power MOSFET through the Miller region, which minimizes the switching
loss on the MOSFET. The device is a robust half-bridge gate drive with input pins capable of tolerating up
to a –10-V input voltage. This TI Design takes advantage of this device’s ability to minimize the switching
loss on the power MOSFET on the LV side at turnoff to operate at a high switching frequency of 100 kHz
per phase. Find more details on this driver from the device datasheet (SLUSBL4).
6.2.3 SN6505B
The SN6505B is a low-noise, low-EMI push-pull transformer driver, specifically designed for small form
factor, isolated power supplies. It drives low-profile, center-tapped transformers from a 2.25- to 5-V DC
power supply. Ultra-low noise and EMI are achieved by slew rate control of the output switch voltage and
through spread spectrum clocking (SSC). The SN6505 consists of an oscillator followed by a gate drive
circuit that provides the complementary output signals to drive ground referenced N-channel power
switches. The device includes two 1-A Power-MOSFET switches to ensure start-up under heavy loads.
The switching clock can also be provided externally for accurate placement of switcher harmonics or when
operating with multiple transformer drivers. The internal protection features include a 1.7-A current limiting,
undervoltage lockout, thermal shutdown, and break-before-make circuitry. The SN6505B includes a soft-
start feature that prevents high inrush current during power up with large load capacitors.
6.2.4 OPA376
The OP376 family of low-noise operational amplifiers (op amp) with e-trim offers outstanding DC precision
and AC performance. The OPA376 is single op amp with rail-to-rail input and output, low offset (25 µV
max), and an ability to operate with common-mode voltages up to 100 mV below the ground. Low noise
(7.5 nV/√Hz), a quiescent current of 950 µA max, and a bandwidth of 5.5 MHz make this part a good fit for
this TI Design.
For the TIDA-00951, the OPA376 is used for low-side bidirectional current sensing, where low offset
voltage and high gain bandwidth product are important in minimizing the current sense resistor value.
6.2.5 LM4041-N
The LM4041-N is a precision voltage reference, which gives a fixed 1.2-V reference voltage. The LM4041-
N device’s advanced design eliminates the need for an external stabilizing capacitor while ensuring
stability with any capacitive load, which makes the LM4041-N easy to use. Curvature correction in the
band-gap reference temperature drift and low-dynamic impedance ensure stable reverse breakdown
voltage accuracy over a wide range of operating temperatures and currents. The LM4041-N 1.2 is used to
provide a precise reference offset voltage to the current sense amplification circuit (based on the OPA376)
to enable bidirectional current sensing.
6.2.6 TIDA-01281
The TIDA-01281 is a TSM320F28033-based control and communications reference design. It acts as the
control card for the TIDA-00951 design. The TMS320F28033 present on-board samples the various
voltages and currents on the TIDA-00951 board and generates the control signals and PWM required for
proper functioning of the TIDA-00951 design.Apart from this the board also contains isolate
communication interface ICs for implementing isolated I2C, CAN and RS485 communication.
6.2.7 TIDA-01141
The TIDA-01141 is a bidirectional high-side current sensing card based on the INA240 current sense
amplifier. The INA240 is a voltage output current sense amplifier with an enhanced PWM rejection feature.
Capable of operating with a common-mode voltage from –4 to 80 V with a DC CMRR of 132 dB, this
device is well suited for high-side current measurement in SMPS and motor control applications.
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6.2.8 TIDA-01159
The TIDA-01159 is an isolated half-bridge gate drive card based on the UCC21520 and SN6505B. It is
used on the TIDA-00951 to drive the isolated HV-side full-bridge power stage.
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L1
Q9 Q8
Q4 Q3 C1 Cclamp
C1
300- to
400-V DC 36- to
60-V DC
T1
Qclamp
C2
Q6 Q7 Q1 Q2
The switches Q1 to Q4 are the LV-side full-bridge MOSFET. The switches Q6 to Q9 form the HV-side full-
bridge MOSFET. The capacitor Cclamp and switch Qclamp form the active clamp.
When the system works as a current-fed full bridge, transferring power from the battery to the DC bus, the
active clamp stores the additional leakage energy when the MOSFET Q1 to Q4 turnoff, thereby limiting
the turnoff spike on the MOSFET. Additionally, by controlling the switching of the MOSFET Q5, the
primary LV MOSFET can be turned on in or close to 0 V, thereby reducing the turnon switching losses.
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Vds_Q1
Id_Q1
Vds_Q2
Iclamp
Vgs_Q1
Vgs_Q2
Vgs_Qclamp
IL
Tdelay_1 Tdelay_2
Take the switch pair Q1 and Q3 as an example to describe the working of the active clamp. When the
switch pair Q1 to Q3 turn off, the current through FETs before turnoff get transferred and start flowing into
the clamp capacitor and the body diode of Qclamp. Because the clamp current is flowing through the body
diode of Qclamp, it can be turned on after a short time (Tdelay_1) in ZVS condition as shown in Figure 4.
Now, before the switch pair Q1 and Q3 is turned on again, the clamp FET Qclamp is turned off. Because the
direction of the Iclamp has reversed and it is now flowing through the channel of the Qclamp, Iclamp instantly
comes to zero.
Because the current through the leakage inductor cannot change instantly, a portion of the current flowing
through the FET Qclamp, begins to flow through the body diode of FET Q1 and Q3. This begins to discharge
the COSS of FETs Q1 and Q3 and causes ZVS to occur. After this, FETs Q1 and Q3 can be turned on
under ZVS or close to ZVS condition, thereby reducing the turnon loss. The delay from the point of turnoff
of the clamp FET Qclamp and turnon of Q1 and Q3 is marked as Tdelay_2 in Figure 4.
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L1
Q4 Q3
Ccla
mp
36 to 60 V
Battery T1
Qcla
mp
Q1 Q2
During the system start-up, if the HV DC bus is completely discharged. The TIDA-00951 starts up using
an additional flyback winding present on the inductor L1. In this mode, the LV-side full bridge does not
work as a current-fed converter but as a flyback converter. It works in this mode until the HV bus reaches
270-V DC and then the system switches over to working as a current-fed converter.
In Figure 5, the MOSFETs Q1, Q2, Q3, and Q4 form the LV-side full bridge. Qclamp and Cclamp form the
active clamp. The flyback winding on the inductor L1 is used to temporarily charge a small capacitor,
which is then boosted and fed to the HV DC bus output capacitors using the boost converter formed by
Q10, D10, and L3.
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Figure 6 shows the PWM waveforms of the LV MOSFETs Q1 to Q4, clamp MOSFET QClamp, and the boost
MOSFET Q10. The figure also shows the current-fed inductor current waveform and the drain-to-source
voltage waveform of the low-side bridge MOSFET.
Vds_Q1,
Q2, Q3, Q4
Vgs_Q1,
Q2, Q3, Q4
Vgs_Q10
Vgs_Qclamp
IL1
All the MOSFETs on the LV bridge are turned on simultaneously. This charges the current-fed inductor.
When these MOSFETs are turned off, the current in the current-fed inductor is transferred to the flyback
winding and energy is stored in the capacitor Ccold_start.
The boosted MOSFET Q10 is then turned on to charge the boost inductor L3. This energy is then
transferred to the HV bus output capacitors.
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è ø 4
3 (9)
ITXPRI_rms = 47 A
The required turns ratio of the transformer is given by Equation 10. The turns ratio is chosen as 6 to help
account for the conduction losses on the LV full bridge.
Ns 380
= = 5.75
Np 66 (10)
The secondary (HV side) RMS current through the transformer is estimated to be ITXSEC_rms = 7.5 A.
LV_AUX_3.3V
LV_AUX_5V
R26
4
1.00k
IBAT_LS 1 PGND
3 VREF_1.2
U5
C42
C51
R27 1.00k
VBAT-
2
3
1µF
1000pF
R28 R19
U6
100k
2 LM4041A12IDBZR
VREF_1.2
SGND
The OPA376 difference amplifier measures the current across a 0.25-mΩ current sense resistor formed by
the parallel combination of resistors of R20 and R29.
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C45
C43 180pF
C41
C49 R61 R62
10µF 1nF
1nF
10µF
0 7.50k
U2 LV_AUX_3.3V C74
SGND
1 8
2
HV_GND VDD1 VDD2 R63 R64 0.1µF
2 7 4.70k 4.70k 3 U5 SGND
VBUS_SEC VINP VOUTP
C75 1 VBUS_S
C10 180pF VBUS_S
3 VINN VOUTN 6 4
1000pF R65 R66
4 5 4.70k 4.70k
GND1 GND2
5
AMC1301DWVR C76 R67 R68
HV_GND 180pF DNP 7.50k SGND
Iso Bus Voltage Sensing SGND VREF_1.2
HV_GND
C77
SGND 0.1µF
SGND
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7.1 Hardware
This section explains the power supply requirement and connectors used to set up the TIDA-00951 board
for testing.
For testing the TIDA-00951, three other TI Designs are used. The TIDA-01281 is a TMS320F28033-based
control and communication card. It is used as the control unit for TIDA-00951. The TIDA-01159 based on
the UCC21520 is the half-bridge gate driver that will be used to drive the HV full-bridge MOSFET. The
TIDA-01141 is the high-side current sensing card based on the INA240 and is used for sensing the
inductor current.
Mount the TIDA-00951 on connector J5. Mount the TIDA-01141 on connector J14.
The TIDA-00951 requires two TIDA-00159 boards on the HV-side full bridge. Each TIDA-01159 board
needs to be mounted on three connectors. The connectors J3, J1, and J4 form one set of connectors on
which one of the TIDA-01159 board is mounted. The connectors J2, J13, and J15 form the other set on
which the second TIDA-01159 board is mounted.
For providing auxiliary power to the TIDA-00951 board, a 12-V DC supply needs to be connected to
connector J6.
12-V AUX
J6
36- to 60-V J9 J8 400-V
DC supply DC supply
TIDA-00951
J11 J10
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A zoomed waveform for hard startup at a 36-V battery voltage is shown in Figure 11.
Figure 11. Boost Mode Hard Start at 36-V Battery Voltage (Zoomed In)
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A zoomed in startup waveform is shown in Figure 13. The voltage spike at turnoff does not cross 10 V.
Figure 13. Boost Mode Hard Start at 60-V Battery Voltage (Zoomed In)
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Figure 15. Boost Mode Working Waveform With Valley Switching Turnon
When the inductor current increases, one can get ZVS operation at turnon. At lower input currents, the LV
MOSFET is turned close to 0 V at turnon.
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Before the MOSFET is turned on again, the clamp MOSFET is turned off; this causes the current through
the clamp to come to zero. Because the current through the transformer leakage inductor cannot change
instantaneously, the current that was flowing through the clamp circuit (clamp MOSFET) begins to free
wheel through the LV MOSFET's body diode, thereby enabling it to turn at the ZVS condition.
The yellow trace represents the HV-side MOSFETs gate drive PWM input signal; the blue trace
represents the current-fed inductor; the green trace is the PWM input signal fed to the LV gate driver; and
the red waveform is the LV MOSFET's drain-to-source voltage. The red waveform goes to 0 V before the
green PWM trace goes high.
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Figure 19 shows the zoomed out mode transition waveform, which shows the actual mode transition
period of 80 µs.
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Figure 21 shows the zoomed in switching waveform during the cold start process. The LV (battery side)
full bridge is being operated in DCM, and the energy in the current-fed inductor is transferred to the
secondary through the Weinberg clamp. This energy stored in a small capacitor on the HV side, which is
boosted to pre-charge the 400-V DC bus capacitors. The green trace shows the PWM signals for the
auxiliary low-power boost converter.
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94%
92%
90%
Efficiency
88%
86%
84%
82%
VBAT = 36 V
80% VBAT = 48 V
VBAT = 60 V
78%
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Output Power (W) D001
94%
92%
90%
Efficiency
88%
86%
84%
82% VBAT = 36 V
VBAT = 48 V
VBAT = 60 V
80%
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Output Power (W) D002
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The maximum temperature on the board is on the isolation transformer. The board is force cooled with a
400LFM airflow.
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9 Design Files
9.1 Schematics
To download the schematics, see the design files at TIDA-00951.
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6. The GND pad on the bottom of the gate driver IC should be connected to a solid plane on the PCB to
help with thermal management for the gate driver and reduce the spikes on the gate driver IC’s pins.
7. Use multiple low ESR ceramic capacitors in the battery input section of the board to support the
required ripple current.
For current sensing:
1. Take a Kelvin connection from the current sense resistor as much as possible to connect to the
amplifier section.
2. Place the low-pass filter components just before the input of the amplifier.
3. The lines taken from the current sensor resistor need to be shielded with the GND plane wherever
possible to limit noise pickup on the lines.
A snapshot of the low-side current sense implementation is shown in Figure 27.
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10 Software Files
To download the software files, see the design files at TIDA-00951.
11 Related Documentation
1. IEEE, Operation principles of bi-directional full-bridge DC/DC converter with unified soft-switching
scheme and soft-starting capability, 15th Annual IEEE Applied Power Electronics Conference and
Exposition, 2000
2. IEEE, Extended Range ZVS Active-Clamped Current-Fed Full-Bridge Isolated DC/DC Converter for
Fuel Cell Applications: Analysis, Design, and Experimental Results, IEEE Transactions on Industrial
Electronics (Volume: 60, Issue: 7, July 2013)
3. Texas Instruments, Bidirectional DC-DC Converter, TIDM-BIDIR-400-12 Design Guide (TIDUAI7)
4. IEEE, Isolated full bridge boost DC-DC converter designed for bidirectional operation of fuel
cells/electrolyzer cells in grid-tie applications, 15th European Conference on Power Electronics and
Applications (EPE), 2013
11.1 Trademarks
C2000, NexFET are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
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