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2N5679 2N5680 PNP

2N5681 2N5682 NPN


w w w. c e n t r a l s e m i . c o m
COMPLEMENTARY DESCRIPTION:
SILICON POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5679, 2N5681
series devices are complementary silicon power
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
and switching applications where high voltages are
required.

MARKING: FULL PART NUMBER

TO-39 CASE

MAXIMUM RATINGS: (TA=25°C unless otherwise noted) 2N5679 2N5680


SYMBOL 2N5681 2N5682 UNITS
Collector-Base Voltage VCBO 100 120 V
Collector-Emitter Voltage VCEO 100 120 V
Emitter-Base Voltage VEBO 4.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 1.0 W
Power Dissipation (TC=25°C) PD 10 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 175 °C/W
Thermal Resistance ΘJC 17.5 °C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)


SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=Rated VCBO 1.0 µA
ICEV VCE=Rated VCEO, VEB=1.5V 1.0 µA
ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C 1.0 mA
ICEO VCE=70V (2N5679, 2N5681) 10 µA
ICEO VCE=80V (2N5680, 2N5682) 10 µA
IEBO VEB=4.0V 1.0 µA
BVCEO IC=10mA (2N5679, 2N5681) 100 V
BVCEO IC=10mA (2N5680, 2N5682) 120 V
VCE(SAT) IC=250mA, IB=25mA 0.6 V
VCE(SAT) IC=500mA, IB=50mA 1.0 V
VCE(SAT) IC=1.0A, IB=200mA 2.0 V
VBE(ON) VCE=2.0V IC=250mA 1.0 V
hFE VCE=2.0V, IC=250mA 40 150
hFE VCE=2.0V, IC=1.0A 5.0
hfe VCE=1.5V, IC=0.2A, f=1.0kHz 40
fT VCE=10V, IC=100mA, f=10MHz 30 MHz
Cob VCB=20V, IE=0, f=1.0MHz 50 pF

R2 (2-December 2013)
2N5679 2N5680 PNP
2N5681 2N5682 NPN

COMPLEMENTARY
SILICON POWER TRANSISTORS

TO-39 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Emitter
2) Base
3) Collector

MARKING: FULL PART NUMBER

R2 (2-December 2013)
w w w. c e n t r a l s e m i . c o m
2N5679 2N5680 PNP
2N5681 2N5682 NPN

COMPLEMENTARY
SILICON POWER TRANSISTORS

PNP TYPICAL ELECTRICAL CHARACTERISTICS

R2 (2-December 2013)
w w w. c e n t r a l s e m i . c o m
2N5679 2N5680 PNP
2N5681 2N5682 NPN

COMPLEMENTARY
SILICON POWER TRANSISTORS

NPN TYPICAL ELECTRICAL CHARACTERISTICS

R2 (2-December 2013)
w w w. c e n t r a l s e m i . c o m
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