Ec2111 Electronic Devices and Circuit
Ec2111 Electronic Devices and Circuit
Ec2111 Electronic Devices and Circuit
L:T:P:M = 3:0:2:100
Aim
Objective
Semi conductor physics and PN junction applications of diode, BJT and MOSFET etc.,
based on characteristics.
To understand the function of various special devices SCR, DIAC, IGBT, TRIAC, UJT
and applications of these devices.
POWER AMPLIFIER - Power BJT – Power MOSFET Comparison – Class A, Class B and
Class AB – Analysis of Class B Power amplifier – Class AB output stage with
Darlington Pair
Total = 90 periods
Text Book:
2.David A.Bell, ‘Electronic Devices and Circuits’, Oxford University Press, 5th Edition,
2008.
References
1.Sedra A.S., Smith K.C. ‘Micro Electronic Circuit’, Oxford University Press, Fifth
Edition, 2006.
8.Tuned Amplifier
10.SCR Characteristics
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