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    3N80

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    hectorsevilla
    mosfet

    Copyright:

    © All Rights Reserved
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    3N80

    Uploaded by

    hectorsevilla
    139 views6 pages
    mosfet

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    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    mosfet

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    139 views6 pages

    3N80

    Uploaded by

    hectorsevilla
    mosfet

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    www.DataSheet4U.

    com

    UNISONIC TECHNOLOGIES CO., LTD


    3N80 Preliminary Power MOSFET

    2.5 Amps, 800 Volts


    N-CHANNEL POWER MOSFET

    „ DESCRIPTION
    The UTC 3N80 uses advanced trench technology to provide
    excellent RDS(ON), low gate charge and operation with low gate
    voltages. This device is suitable for use as a load switch or in PWM
    applications.
    „ FEATURES
    * RDS(ON)=3.8Ω @VGS=10 V
    * Ultra low gate charge ( typical 19 nC )
    * Low reverse transfer capacitance ( CRSS = typical 11 pF )
    * Fast switching capability Lead-free: 3N80L
    * Avalanche energy specified Halogen-free: 3N80G
    * Improved dv/dt capability, high ruggedness
    „ SYMBOL

    2.Drain

    3.Gate

    1.Source

    „ ORDERING INFORMATION
    Ordering Number Pin Assignment
    Package Packing
    Normal Lead Free Halogen Free 1 2 3
    3N80-TA3-T 3N80L-TA3-T 3N80G-TA3-T TO-220 G D S Tube
    3N80-TF3-T 3N80L-TF3-T 3N80G-TF3-T TO-220F G D S Tube

    www.unisonic.com.tw 1 of 6

    Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-283,a


    www.DataSheet4U.com

    3N80 Preliminary Power MOSFET


    „ ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise specified)
    PARAMETER SYMBOL RATINGS UNIT
    Drain-Source Voltage (VGS=0V) VDSS 800 V
    Drain-Gate Voltage (RG=20kΩ) VDGR 800 V
    Gate-Source Voltage VGSS ±30 V
    Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V
    Gate Source ESD(HBM-C=100pF, R=1.5KΩ) VESD(G-S) 2 V
    Insulation Withstand Voltage (DC) TO-220F VISO 2500 V
    Avalanche Current (Note 2) IAR 2.5 A
    Continuous Drain Current ID 2.5 A
    Pulsed Drain Current IDM 10 A
    Single Pulse Avalanche Energy (Note 3) EAS 170 mJ
    Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
    TO-220 70
    Power Dissipation PD W
    TO-220F 25
    Junction Temperature TJ +150 ℃
    Storage Temperature TSTG -55 ~ +150 ℃
    Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.
    2. Pulse width limited by TJ(MAX)
    3. starting TJ=25 °C, ID=IAR, VDD=50V
    4. ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX).

    „ THERMAL DATA
    PARAMETER SYMBOL RATING UNIT
    TO-220 62.5
    Junction-to-Ambient θJA °C/W
    TO-220F 62.5
    TO-220 1.78
    Junction-to-Case θJC °C/W
    TO-220F 5

    „ ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified)


    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    OFF CHARACTERISTICS
    Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=1mA 800 V
    Drain-Source Leakage Current IDSS VDS=800V, VGS=0 V 1 μA
    Gate-Source Leakage Current IGSS VGS=±30V, VDS=0 V ±10 μA
    ON CHARACTERISTICS
    Gate Threshold Voltage VGS(TH) VDS=VGS, ID=50μA 3 3.75 4.5 V
    Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.25A 3.8 4.5 Ω
    Forward Transconductance (Note 1) gFS VDS=15V, ID=1.25A 2.1 S
    DYNAMIC CHARACTERISTICS
    Input Capacitance CISS 485 pF
    Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 57 pF
    Reverse Transfer Capacitance CRSS 11 pF
    Equivalent Output Capacitance (Note 2) COSS(EQ) VGS=0V, VDS=0V~640V 22 pF
    SWITCHING CHARACTERISTICS
    Turn-On Delay Time tD(ON) 17 ns
    Turn-On Rise Time tR VDD=400V, ID=1.25 A, RG=4.7Ω 27 ns
    Turn-Off Delay Time tD(OFF) VGS=10 V 36 ns
    Turn-Off Fall Time tF 40 ns
    Total Gate Charge QG 19 nC
    Gate-Source Charge QGS VDD=640V, ID=2.5A, VGS=10V 3.2 nC
    Gate-Drain Charge QDD 10.8 nC

    UNISONIC TECHNOLOGIES CO., LTD 2 of 6


    www.unisonic.com.tw QW-R502-283.a
    www.DataSheet4U.com

    3N80 Preliminary Power MOSFET

    „ ELECTRICAL CHARACTERISTICS(Cont.)
    SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
    Diode Forward Voltage(Note 1) VSD ISD=2.5A ,VGS=0V 1.6 V
    Source-Drain Current ISD 2.5 A
    Source-Drain Current (Pulsed) ISDM 10 A
    Reverse Recovery Current IRRM 8.4 A
    ISD=2.5A, di/dt=100A/μs,
    Body Diode Reverse Recovery Time tRR 384 ns
    VDD=50V, TJ=25°C
    Body Diode Reverse Recovery Charge QRR 1600 nC
    Note: 1.Pulse width=300μs, Duty cycle≦1.5%
    Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
    increases from 0to 80% VDSS.

    UNISONIC TECHNOLOGIES CO., LTD 3 of 6


    www.unisonic.com.tw QW-R502-283.a
    www.DataSheet4U.com

    3N80 Preliminary Power MOSFET


    „ TEST CIRCUITS AND WAVEFORMS

    D.U.T. +

    VDS

    - L

    RG
    Driver VDD
    * dv/dt controlled by RG
    Same Type * ISD controlled by pulse period
    VGS as D.U.T. * D.U.T.-Device Under Test

    Fig. 1A Peak Diode Recovery dv/dt Test Circuit

    VGS Period P. W.
    D=
    (Driver) P.W. Period

    VGS= 10V

    IFM, Body Diode Forward Current


    ISD
    (D.U.T.)
    di/dt

    IRM

    Body Diode Reverse Current

    Body Diode Recovery dv/dt


    VDS
    (D.U.T.) VDD

    Body Diode Forward Voltage Drop

    Fig. 1B Peak Diode Recovery dv/dt Waveforms

    UNISONIC TECHNOLOGIES CO., LTD 4 of 6


    www.unisonic.com.tw QW-R502-283.a
    www.DataSheet4U.com

    3N80 Preliminary Power MOSFET


    „ TEST CIRCUITS AND WAVEFORMS (Cont.)

    Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

    Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

    L
    VDS

    BVDSS
    IAS

    RD
    VDD
    ID(t)
    VDS(t)
    VDD
    10V D.U.T.
    tp
    tp Time

    Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

    UNISONIC TECHNOLOGIES CO., LTD 5 of 6


    www.unisonic.com.tw QW-R502-283.a
    www.DataSheet4U.com

    3N80 Preliminary Power MOSFET

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
    other parameters) listed in products specifications of any and all UTC products described or contained
    herein. UTC products are not designed for use in life support appliances, devices or systems where
    malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
    whole or in part is prohibited without the prior written consent of the copyright owner. The information
    presented in this document does not form part of any quotation or contract, is believed to be accurate
    and reliable and may be changed without notice.

    UNISONIC TECHNOLOGIES CO., LTD 6 of 6


    www.unisonic.com.tw QW-R502-283.a

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