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Notes On WL Ratio

Increasing the W/L ratio of a MOSFET generally increases its transconductance and drive strength by allowing more current to flow, but it also increases capacitance which can lower speed; the W/L ratio is directly proportional to the conduction parameter Kn which determines current, but does not affect threshold voltage VT which depends on other factors like gate oxide thickness. The optimal W/L ratio depends on the circuit application - larger ratios improve gain but hurt matching, so ratios are chosen to balance these factors based on simulations.

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962 views2 pages

Notes On WL Ratio

Increasing the W/L ratio of a MOSFET generally increases its transconductance and drive strength by allowing more current to flow, but it also increases capacitance which can lower speed; the W/L ratio is directly proportional to the conduction parameter Kn which determines current, but does not affect threshold voltage VT which depends on other factors like gate oxide thickness. The optimal W/L ratio depends on the circuit application - larger ratios improve gain but hurt matching, so ratios are chosen to balance these factors based on simulations.

Uploaded by

henz Josh
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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1. What happens if we increase the W/L ratio in MOSFET?

Different Opinions (ATSA SE PARO)

1. The transconductance (gm) increases generally but can start to limit at very low current density.
This would be for analog circuits. A more relevant term in digital circuits is Idsat which also
increases. That is the drive strength increases. Capacitance terms also increase.
2. Resistance of MOSFET would decrease.
Ion and Ioff both will increase. Would be making the MOSFET both faster in On mode and noisy
in OFF mode.
Capacitance would also increase that would result in increase in delay.
Due to increase in Ioff, lots of power loss is expected and thus the system made of v. large W/L
would also have lots of power loss.

2. What is the relationship between W/L, K, and the threshold


voltage of the MOSFET?
1. The K constant you refer to (more specifically 𝐾𝑛 ) is called the conduction parameter of the n-
channel device.
𝐾𝑛 is given by:
𝐾𝑛′ 𝑊
𝐾𝑛 = .
2 𝐿
Where

𝐾𝑛′ = 𝜇𝑛 𝐶𝑜𝑥
μn is the mobility of the electrons in the inversion layer and Cox is the oxide capacitance per unit area.
According to Neamen the 𝐾𝑛′ parameter is called the "process conduction parameter" and is considered to
𝑊
be a constant for a fabrication technology. Therefore the ratio is the transistor design variable.
𝐿

Neamen goes on to say that the design variable is used to design MOSFETS to produce specific current-
voltage characteristics in MOSFET circuits.

Note: W refers to width and L to length. It relates to the geometry of the semiconductor.

Neamen is an author. You can also find his semiconductor book.


𝑊
2. 𝑉𝑇 (Threshold voltage) is not affected by the 𝐿
ratio of the transistor, as it depends on other
parameters, such as the gate insulator thickness and dielectric constant; it also depends on Source-Bulk
voltage, in what is called Body effect:
𝑉𝑇𝐵 = 𝑉𝑇0 + 𝛾(√𝑉𝑆𝐵 + 2𝜙𝐹 − √2𝜙𝐹
Where, 𝑉𝑇𝐵 is the threshold voltage when substrate bias is present, 𝑉𝑆𝐵 is the source-to-body substrate
bias, 𝜙𝐹 is the surface potential, and 𝑉𝑇0 is threshold voltage for zero substrate bias,
𝑡𝑜𝑥
𝛾= √2𝑞𝜀𝑆𝑖 𝑁𝐴 is the body effect parameter, 𝑡𝑜𝑥 is oxide thickness, 𝜀𝑜𝑥 is oxide permittivity, 𝜀𝑆𝑖 is the
𝜀𝑜𝑥
permittivity of silicon, 𝑁𝐴 is a doping concentration, 𝑞 is elementary charge.

(Body effect on Threshold Voltage samjha raha he. OKAY.)

Just as note: usually in integrated circuits, L is limited by the technology (as small as possible) and
the conductivity is increased with bigger W; in this way, though, also the gate capacitance is
increased, so often it doesn't bring any advantage.

3. How can I decide the W/L ratio of MOSFET?

First Opinion
a. The gate length specified for a MOSFET technology means the MINIMUM length. In
design it can be larger than the minimum length.
b. The W/L ratio is linked to the trans-conductance and the current capability, together with
the multiplicity factor m. A higher w/l ratio increases the current gain and subsequently a
higher current for a given Vg. The same is for a higher m that means m·W/L.
c. In practice, for the gain stages are useful large transistors, i.e. large W/L ratios or/and
large m. As example, the differential input stage of OpAmps needs high gain. However,
the good matching of the input differential stage has to be considered as well.
d. In the current mirrors, a higher transistor gate length is beneficial, for a better matching
of the mirror’s currents. You can play with these parameters in simulations to observe the
impact of the length on the mirrors current matching.
e. In general, a larger transistor ensures a better matching because it minimizes the edge
effects, but this is paid with a significant area price.

Second Opinion
You need to understand the geometrical sensitivity of your circuit. So if it is a biasing circuit, i.e.
current mirror, or a current source that needs to match to another source on the die, then you
need to increase the length and make the width a nominal say 5um and then use multiple legs to
accomplish the sizing. Make sure all transistors that are to match have the same orientation and
layout and only differ in the multiplier. Minimum length and width devices have poor matching!

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