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0% found this document useful (0 votes)
113 views5 pages

Sav-331 PDF

Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
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Ultra Low Noise, Medium Current

D-PHEMT Transistor SAV-331+


50Ω 10 to 4000 MHz

The Big Deal


• Low noise figure, 0.5 dB
• High gain, 24.1 dB
• High IP3, +32.3 dBm CASE STYLE: MMM1362
• High P1dB, 19.6 dBm

Product Overview
Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000
MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system
noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications
systems. Manufactured using highly repeatable D-PHEMT* technology, the unit comes housed in a tiny
4-lead SOT-343 package. This model requires external biasing and matching.

Key Features
Feature Advantages
A single device covers many wireless communications bands including cellular, ISM,
Wideband, 10 to 4000 MHz
GSM, WCDMA, WiMax, WLAN, and more.

The SAV-331+ matches industry leading IP3 performance relative to device size and
High IP3 vs. DC power consumption power consumption. Enhanced linearity over a broad frequency range makes the
• +32.3 dBm at 300 MHz device ideal for use in:
• +38.7 dBm at 4000 MHz • Driver amplifiers for complex waveform upconverter paths
• Drivers in linearized transmit systems

Combines high gain (24.1 dB) with very The unique combination of high gain and low noise Figure results in lower overall
low noise Figure (0.5 dB) system noise.

* Depletion mode Pseudomorphic High Electron Mobility Transistor.

Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Mini-Circuits
®

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 1 of 5
Ultra Low Noise, Medium Current
D-PHEMT Transistor 10-4000 MHz
Product Features
• Low Noise Figure, 0.5 dB typ. at 300 MHz
• Gain, 24.1 dB typ. at 300 MHz
• High Output IP3, +32.3 dBm typ. at 300 MHz
• Output Power at 1dB comp., +19.6 dBm typ. at 300 MHz
• Low Current, 60mA
• External biasing and matching required
SAV-331+
CASE STYLE: MMM1362
Typical Applications
• Cellular
• ISM +RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
• GSM for RoHS Compliance methodologies and qualifications
• WCDMA
• WiMax
• WLAN
• UNII and HIPERLAN

General Description
Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000
MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system
noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications
systems. Manufactured using highly repeatable D-PHEMT* technology, the unit comes housed in a tiny
4-lead SOT-343 package. This model requires external biasing and matching.

simplified schematic and pin description


DRAIN DR AIN 1 4 S OUR C E

GATE

S OUR C E 2 3 G AT E

SOURCE
SOT-343 (SC-70) PACKAGE

Function Pin Number Description


Source 2&4 Source terminal, normally connected to ground
Gate 3 Gate used for RF input
Drain 1 Drain used for RF output
* Depletion mode Pseudomorphic High Electron Mobility Transistor.

Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled REV. OR
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp M168623

Mini-Circuits
® SAV-331+
RS/CP/AM
190110
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 2 of 5
D-PHEMT
D-PHEMT SAV-331+
SAV-331+
Electrical Specifications
Electrical Specifications at
at TTAMB =25°C, Frequency 10 to 4000 MHz
AMB=25°C, Frequency 10 to 4000 MHz
Symbol Parameter Condition Min. Typ. Max. Units
DC Specifications
VGS Operational Gate Voltage VDS=4V, IDS=60 mA -0.81 -0.69 -0.57 V
Vp Pinch-off Voltage VDS=1.5 V, IDS= 10% of Idss -0.81 V
IDSS Saturated Drain Current VDS=4V, VGS=0 V 228 mA

GM Transconductance VDS=4V, Gm=∆ IDSS/∆VP 282 mS

IGDO Gate to Drain Leakage Current VGD=-5V 1000 uA

IGSS Gate leakage Current VGD=VGS=-4V 600 uA


Specifications, Z0=50 Ohms (Figure 1)*
NF Noise Figure VDS=4V, IDS=60 mA f=40 MHz 0.9
f=300 MHz 0.5
f=900 MHz 0.4 dB
f=2000 MHz 0.5 0.8
f=4000 MHz 0.9
f=10 MHz 24.6 dB
f=300 MHz 24.1
VDS=4V, IDS=60 mA
Gain Gain f=900 MHz 21.3
f=2000 MHz 13.9 16.6 18.3
f=4000 MHz 11.5
f=10 MHz 30.9
f=300 MHz 32.3
f=900 MHz 33.5 dBm
OIP3 Output IP3 VDS=4V, IDS=60 mA
f=2000 MHz 35.5
f=4000 MHz 38.7
f=10 MHz 19.1
P1dB Power output at 1 f=300 MHz 19.6
VDS=4V, IDS=60 mA dBm
dB Compression f=900 MHz 18.0 20.2
f=2000 MHz 18.9 21.1
f=4000 MHz 21.8
ΘJC Thermal Resistance 109 °C/W
* Tested on Mini-Circuits TB-471+ test board.

Absolute Maximum Ratings(1)


Symbol Parameter Max. Units
VDS Drain-Source Voltage2 5 V
VGS Gate-Source Voltage2 -5 V
VGD Gate-Drain Voltage2 -5 V
IDS Drain Current2 149 mA
PDISS Total Dissipated Power 400 mW
PIN RF Input Power 20 dBm
TCH Channel Temperature 150 °C
TOP Operating Temperature -40 to 85 °C
TSTD Storage Temperature -65 to 150 °C
Notes:
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Assumes DC quiescent conditions, Vgs = -0.51 V, Vds = 4 V.

Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Mini-Circuits
®

Page 2 of 4
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 3 of 5
D-PHEMT SAV-331+
Characterization Test Circuit

Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-471+)
Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24.
Noise Figure measured using keysight PNA-X.

Conditions:
1. Drain voltage (with reference to source, VDS)= 4V as shown.
2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table.
3. Gain: Pin= -25dBm
4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
5. No external matching components used.

Fig 2. Test Board used for characterization, Mini-Circuits P/N TB-471+ (Material: Rogers 4350, Thickness: 0.02”)

Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Mini-Circuits
®

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 4 of 5
D-PHEMT SAV-331+
Product Marking

33

Additional Detailed Technical Information


Additional information is available on our web site www.minicircuits.com. To access this information
enter the model number on our web site home page.

Performance data, graphs, s-parameter data set (.zip file)

Case Style: MMM1362


Plastic molded SOT-343 (SC-70) style package, lead finish: matte tin

Suggested Layout for PCB Design: PL-300

Tape & Reel: F90


Standard quantities availabe on reel: 7” reels with 20, 50, 100, 200, 500, 1K, 2K, or 3K devices.

Characterization Test Board: TB-471+

Environmental Ratings: ENV08T2

ESD Rating
Human Body Model (HBM): Class 0 (<250 V) in accordance with ANSI/ESD STM 5.1 - 2001

MSL Rating
Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020D

Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Mini-Circuits
®

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 5 of 5

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