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The 2SC3280 is a silicon NPN power transistor in a TO-3PL package. It has a current gain of 55-160 and can handle currents up to 12A and power dissipation up to 120W. It is recommended for use in 80W high fidelity audio frequency amplifier output stages. Key specifications include a collector-emitter breakdown voltage of 160V and saturation voltage of 2.5V or less at 8A collector current.

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Carlos A. Naranjo E.
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360 views5 pages

2309

The 2SC3280 is a silicon NPN power transistor in a TO-3PL package. It has a current gain of 55-160 and can handle currents up to 12A and power dissipation up to 120W. It is recommended for use in 80W high fidelity audio frequency amplifier output stages. Key specifications include a collector-emitter breakdown voltage of 160V and saturation voltage of 2.5V or less at 8A collector current.

Uploaded by

Carlos A. Naranjo E.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3280

DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1301

APPLICATIONS
·Power amplifier applications
·Recommended for 80W high fidelity audio
frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 160 V

VCEO Collector-emitter voltage Open base 160 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 12 A

IB Base current 1.2 A

PC Collector power dissipation TC=25 120 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3280

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 160 V

VCEsat Collector-emitter saturation voltage IC=8A IB=0.8A 2.5 V

VBE Base-emitter voltage IC=6A ; VCE=5V 1.5 V

ICBO Collector cut-off current VCB=160V IE=0 5 µA

IEBO Emitter cut-off current VEB=5V; IC=0 5 µA

hFE-1 DC current gain IC=1A ; VCE=5V 55 160

hFE-2 DC current gain IC=6A ; VCE=5V 35

fT Transition frequency IC=1A ; VCE=5V 30 MHz

COB Collector output capacitance f=1MHz;VCB=10V 220 pF

hFE-1 classifications
R O

55-110 80-160

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3280

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)

Downloaded from: http://www.datasheetcatalog.com/


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3280

Downloaded from: http://www.datasheetcatalog.com/


This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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