MC34152, MC33152,

NCV33152

High Speed Dual

MOSFET Drivers
The MC34152/MC33152 are dual noninverting high speed drivers
specifically designed for applications that require low current digital http://onsemi.com
signals to drive large capacitive loads with high slew rates. These
devices feature low input current making them CMOS/LSTTL logic MARKING
compatible, input hysteresis for fast output switching that is DIAGRAMS
independent of input transition time, and two high current totem pole
outputs ideally suited for driving power MOSFETs. Also included is 8
an undervoltage lockout with hysteresis to prevent system erratic PDIP−8 MC3x152P
operation at low supply voltages. P SUFFIX AWL
Typical applications include switching power supplies, dc−to−dc 8 CASE 626 YYWWG
converters, capacitor charge pump voltage doublers/inverters, and 1
1
motor controllers.
This device is available in dual−in−line and surface mount packages. 8
Features SOIC−8 3x152
8
D SUFFIX ALYWG
• Two Independent Channels with 1.5 A Totem Pole Outputs 1 CASE 751 G
• Output Rise and Fall Times of 15 ns with 1000 pF Load 1
• CMOS/LSTTL Compatible Inputs with Hysteresis
x = 3 or 4
• Undervoltage Lockout with Hysteresis A = Assembly Location
• Low Standby Current WL, L = Wafer Lot
YY, Y = Year
• Efficient High Frequency Operation WW, W = Work Week
• Enhanced System Performance with Common Switching Regulator G or G = Pb−Free Package
Control ICs (Note: Microdot may be in either location)

• NCV Prefix for Automotive and Other Applications Requiring Site

and Change Controls PIN CONNECTIONS
• These are Pb−Free and Halide−Free Devices
N.C. 1 8 N.C.
VCC 6
Logic Input A 2 7 Drive Output A
+
- GND 3 6 VCC
5.7V Logic Input B 4 5 Drive Output B
Drive Output A
(Top View)
Logic
7
Input A 2 100k

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.

Drive Output B
Logic
5
Input B 4 100k

GND 3
Figure 1. Representative Diagram

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

September, 2014− Rev. 14 MC34152/D
 MC34152, MC33152, NCV33152

MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage VCC 20 V
Logic Inputs (Note 1) Vin −0.3 to +VCC V
Drive Outputs (Note 2) A
Totem Pole Sink or Source Current IO 1.5
Diode Clamp Current (Drive Output to VCC) IO(clamp) 1.0
Power Dissipation and Thermal Characteristics
D Suffix, Plastic Package Case 751
Maximum Power Dissipation @ TA = 50°C PD 0.56 W
Thermal Resistance, Junction−to−Air RqJA 180 °C/W
P Suffix, Plastic Package, Case 626
Maximum Power Dissipation @ TA = 50°C PD 1.0 W
Thermal Resistance, Junction−to−Air RqJA 100 °C/W
Operating Junction Temperature TJ +150 °C
Operating Ambient Temperature MC34152 TA 0 to +70 °C
Operating Ambient Temperature MC33152 −40 to +85
Operating Ambient Temperature MC33152V, NCV33152 −40 to +125
Storage Temperature Range Tstg −65 to +150 °C
Electrostatic Discharge Sensitivity (ESD) (Note 3) ESD V
Human Body Model (HBM) 2000
Machine Model (MM) 200
Charged Device Model (CDM) 1500
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or VCC, whichever is less.
2. Maximum package power dissipation limits must be observed.
3. ESD protection per following tests:
JEDEC Standard JESD22−A114−F for HBM
JEDEC Standard JESD22−A115−A for MM
JEDEC Standard JESD22−C101D for CDM.

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 MC34152, MC33152, NCV33152

ELECTRICAL CHARACTERISTICS (VCC = 12 V, for typical values TA = 25°C, for min/max values TA is the operating ambient
temperature range that applies [Note 4], unless otherwise noted.)
Characteristics Symbol Min Typ Max Unit
LOGIC INPUTS
Input Threshold Voltage V
Output Transition High−to−Low State VIH − 1.75 2.6
Output Transition Low−to−High State VIL 0.8 1.58 −
Input Current mA
High State (VIH = 2.6 V) IIH − 100 300
Low State (VIL = 0.8 V) IIL − 20 100
DRIVE OUTPUT
Output Voltage V
Low State (Isink = 10 mA) VOL − 0.8 1.2
Low State (Isink = 50 mA) − 1.1 1.5
Low State (Isink = 400 mA) − 1.8 2.5
High State (Isource = 10 mA) VOH 10.5 11.2 −
High State (Isource = 50 mA) 10.4 11.1 −
High State (Isource = 400 mA) 10 10.8 −
Output Pull−Down Resistor RPD − 100 − kW
SWITCHING CHARACTERISTICS (TA = 25°C)
Propagation Delay (CL = 1.0 nF) ns
Logic Input to: Drive Output Rise (10% Input to 10% Output) tPLH (IN/OUT) − 55 120
Drive Output Fall (90% Input to 90% Output) tPHL (IN/OUT) − 40 120
Drive Output Rise Time (10% to 90%) CL = 1.0 nF tr − 14 30 ns
Drive Output Rise Time (10% to 90%) CL = 2.5 nF − 36 −
Drive Output Fall Time (90% to 10%) CL = 1.0 nF tf − 15 30 ns
Drive Output Fall Time (90% to 10%) CL = 2.5 nF − 32 −

TOTAL DEVICE
Power Supply Current ICC mA
Standby (Logic Inputs Grounded) − 6.0 8.0
Operating (CL = 1.0 nF Drive Outputs 1 and 2, f = 100 kHz) − 10.5 15
Operating Voltage VCC 6.1 − 18 V
UNDERVOLTAGE LOCKOUT
Startup Threshold Vth − 5.8 6.1 V
Minimum Operating Voltage After Turn−On (VCC) VCC(min) − 5.3 − V
4. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
Tlow = 0°C for MC34152, −40°C for MC33152, −40°C for MC33152V
Thigh = +70°C for MC34152, +85°C for MC33152, +125°C for MC33152V
NCV33152: Tlow = −40°C, Thigh = +125°C. Guaranteed by design.

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 MC34152, MC33152, NCV33152

12V
4.7 0.1
+
6

+
+ -
5.7V Drive Output
Logic Input 7
2

100k
5V
50 CL 90%
Logic Input
tr, tf ≤ 10 ns
0V 10%
tPHL
4 5 tPLH

100k
10%
Drive Output
90%
3 tr tf

Figure 2. Switching Characteristics Test CIrcuit Figure 3. Switching Waveform Definitions

2.4 2.2
VCC=12V VCC=12V
Vth , INPUT THRESHOLD VOLTAGE (V)

2.0 TA=25°C 2.0

Iin , INPUT CURRENT (mA)

1.6 1.8
Upper Threshold
Low State Output
1.2 1.6
Lower Threshold
0.8 1.4 High State Output

0.4 1.2

0 1.0
0 2.0 4.0 6.0 8.0 10 12 -55 -25 0 25 50 75 100 125
Vin, INPUT VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)

Figure 4. Logic Input Current versus Input Voltage Figure 5. Logic Input Threshold Voltage
versus Temperature
tPLH(In/Out) , DRIVE OUTPUT PROPAGATION DELAY (ns)

tPHL(In/Out) , DRIVE OUTPUT PROPAGATION DELAY (ns)

200 200
VCC=12V Overdrive Voltage is with Respect Overdrive Voltage is with Respect VCC=12V
CL=1.0nF to the Logic Input Lower Threshold to the Logic InputUpperThreshold CL=1.0nF
160 TA=25°C 160 TA=25°C

120 120

80 80

40 40

Vth(lower) Vth(upper)
0 0
-1.6 -1.2 -0.8 -0.4 0 0 1 2 3 4
Vin, INPUT OVERDRIVE VOLTAGE BELOW LOWER THRESHOLD (V) Vin, INPUT OVERDRIVE VOLTAGE ABOVE UPPER THRESHOLD (V)

Figure 6. Drive Output High to Low Propagation Figure 7. Drive Output Low to High Propagation
Delay versus Logic Input Overdrive Voltage Delay versus Logic Input Overdrive Voltage

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