ID. 06-09-0126 REV.

Ø WAFER FABRICATION FLOWCHART – BICMOS PROCESS

WAFER FABRICATION FLOWCHART

(04/06/09)
INCOMING

Vendor: Linear Technology Corporation

Product: BICMOS Products QUALITY INSPECTION AND GATE
Package: All Package Types
Location of Wafer Fab: Linear Technology Corp., Milpitas, CA./ Camas, WA
MANUFACTURING PROCESS
Assembly: Linear Technology Corporation, Penang, Malaysia or
approved assembly subcontractor
Final Test: Linear Technology Corp., Milpitas, CA., Singapore QUALITY MONITOR / SURVEILLANCE
Q.C. Test: Linear Technology Corp., Milpitas, CA., Singapore
Source Accept Test: Linear Technology Corp., Milpitas, CA., Singapore
REWORK
Quality Contact: Naib Girn, LTC Milpitas, CA
(408) 432-1900 Ext. 2519

INSPECTION/TEST METHOD & SAMPLING SPC

FLOW CHART PROCESS STEP DESCRIPTION
CRITERIA EQUIPMENT PLAN TECHNIQUE

INCOMING RAW WAFERS VISUAL: SCRATCHES, 1 X INSPECTION 1.0% AQL TO LOGBOOK

MATERIAL INSPECTION PITS, HAZE, CRATERS, 2.5 AQL LEVEL 1
DIMPLES,
CONTAMINATION

OXYGEN/CARBON INFRARED S/S=2,

MEASUREMENT SPECTROMETER ACC = 0

RESISTIVITY / MAGNETRON V/I S/S=2,

CONDUCTIVITY METER ACC = 0

DIMENSIONAL CALIPERS 2.5% AQL, LEVEL 1

THICKNESS AND DIAL THICKNESS 2.5% AQL, LEVEL 1

TAPER/BOW GAGE

ORIENTATION BREAK TEST S/S=1.

ACC = 0

C OF C VERIFICATION EACH BATCH

AGAINST “MPS”
REQUIREMENTS

RETICLE C OF C VERIFICATION EACH PLATE

CHEMICALS C OF C VERIFICATION
AGAINST “MPS”
REQUIREMENTS

GASES C OF C VERIFICATION
AGAINST “MPS”
REQUIREMENTS

TARGETS C OF C VERIFICATION

INITIAL OXIDATION FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS
INSPECTION PER WAFER

OXIDE THICKNESS NANOSPEC 3 WAFERS / CYCLE TREND CHART

N-BURIED LAYER MASK RESIST MASK DEVELOP INSPECT UV and 5 WAFERS PRODUCTION
MICROSCOPE 5 SPOTS AT 100X LOG

N-BURIED LAYER IMPLANT IMPLANT DOSE CHECK THEMAWAVE 2 WAFERS/LOT TREND CHART

STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS PRODUCTION

SULFURIC ACID MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

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ID. 06-09-0126 REV. Ø WAFER FABRICATION FLOWCHART – BICMOS PROCESS

INSPECTION/TEST METHOD & SAMPLING SPC

FLOW CHART PROCESS STEP DESCRIPTION
CRITERIA EQUIPMENT PLAN TECHNIQUE

N-BURIED LAYER DRIVE FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER

OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE

P-BURIED LAYER MASK RESIST MASK DEVELOP INSPECT UV and 5 WAFERS PRODUCTION
MICROSCOPE 5 SPOTS AT 100X LOG

P-BURIED LAYER IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS PRODUCTION

SULFURIC ACID MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

P-BURIED LAYER DRIVE FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER

OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE

EPI DEPOSIT EPI ASM VISUAL UV LAMP INSPECT 2

WAFERS / RUN
INTERFERENCE
CONTRAST
MICROSCOPE
Rs 4 POINT PROBE 2 READING/PASS X Bar & MOVING
EPI THICKNESS R
FTIR 1 WAFER/LOT LOGBOOK

PAD OXIDATION FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER

OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE TREND CHART

HV P-WELL MASK RESIST MASK/ FINAL INSPECT UV and 5 WAFERS PRODUCTION

HF ETCH BATH MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

HV P-WELL IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS PRODUCTION

SULFURIC ACID MICROSCOPE “S” PATTERN SCAN LOG
AT 200X
P+ ISOLATION MASK RESIST MASK/
FINAL INSPECT UV and 5 WAFERS PRODUCTION
HF ETCH BATH
MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

P+ ISOLATION IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS PRODUCTION

SULFURIC ACID MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

FINAL INSPECT UV and 5 WAFERS PRODUCTION

N+ SINKER MASK RESIST MASK/ MICROSCOPE “S” PATTERN SCAN LOG
HF ETCH BATH AT 200X

N+ SINKER IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT LOGBOOK

STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS PRODUCTION

SULFURIC ACID MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

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INSPECTION/TEST METHOD & SAMPLING SPC

FLOW CHART PROCESS STEP DESCRIPTION
CRITERIA EQUIPMENT PLAN TECHNIQUE

N-WELL MASK RESIST MASK FINAL INSPECT UV and 5 WAFERS PRODUCTION

MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

LV N-WELL IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS PRODUCTION

SULFURIC ACID MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

P-WELL MASK RESIST MASK FINAL INSPECT UV and 5 WAFERS PRODUCTION

MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

LV P-WELL IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS PRODUCTION

SULFURIC ACID MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

NITRIDE DEPOSITION LPCVD NITRIDE VISUAL UV LAMP 100%, MORE THAN TREND CHART
DEPOSITION 2 COLOR CHANGE
IS FAIL

10X MICROSCOPE 2 WAFERS/CYCLE

<5 DEFECTS/PER
FIELD OF VIEW

NITRIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE

WELL/SINKER DRIVE FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER

ACTIVE MASK RESIST MASK FINAL INSPECT UV and 5 WAFERS PRODUCTION

MICROSCOPE “S” PATTERN SCAN LOG
PLASMA ETCH AT 200X

P FIELD IMPLANT MASK RESIST MASK VISUAL INSPECTION MICROSCOPE 400X “S” PATTERN SCAN PRODUCTION
OF THE WAFERS LOG

BORON FIELD IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS / LOT TREND CHART

STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS PRODUCTION

SULFURIC ACID MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

LOCOS OXIDE FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER TREND CHART

OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE

STRIP NITRIDE H3PO4 ETCH BATH VISUAL UV LAMP LOGBOOK

MICROSCOPE
INSPECTION

THICKNESS NANOSPEC 2 WAFERS /LOT

SACRIFICIAL OXIDATION FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS
INSPECTION PER WAFER

OXIDE THICKNESS NANOSPEC 3 WAFERS / CYCLE TREND CHART

STRIP OXIDE HF ETCH BATH VISUAL UV LAMP LOGBOOK

MICROSCOPE
INSPECTION

THICKNESS NANOSPEC 2 WAFERS /LOT

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INSPECTION/TEST METHOD & SAMPLING SPC

FLOW CHART PROCESS STEP DESCRIPTION
CRITERIA EQUIPMENT PLAN TECHNIQUE

THICK GATE OXIDE FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER

OXIDE THICKNESS NANOSPEC 3 WAFERS/CYCLE TREND CHART

THIN OXIDE MASK RESIST MASK/ FINAL INSPECT UV and 5 WAFERS PRODUCTION
HF ETCH BATH MICROSCOPE “S” PATTERN SCAN LOG
AT 200X

THIN GATE OXIDE FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER

OXIDE THICKNESS ELLIPSOMETER 3 WAFERS/CYCLE TREND CHART

POLY 1 DEPOSITION LPCVD VISUAL UV LAMP 100%, MORE THAN

DEPOSITION 2 COLOR CHANGE
IS FAIL

10X MICROSCOPE 3 WAFERS/CYCLE

<5 DEFECTS/PER
FIELD OF VIEW

POLY THICKNESS NANOSPEC 3 WAFERS/CYCLE TREND CHART

PRODUCTION
VT MASK RESIST MASK DEVELOP INSPECT UV and 5 WAFERS LOG
MICROSCOPE 5 SPOTS AT 100X

LT THRESHOLD ADJUST IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

IMPLANT

PRODUCTION
STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS LOG
SULFURIC ACID MICROSCOPE “S” PATTERN SCAN
AT 200X
PRODUCTION
VTHV IMPLANT MASK RESIST MASK DEVELOP INSPECT UV and 5 WAFERS LOG
MICROSCOPE 5 SPOTS AT 100X

HV THRESHOLD ADJUST IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

IMPLANT

PRODUCTION
STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS LOG
SULFURIC ACID MICROSCOPE “S” PATTERN SCAN
AT 200X
WSIX CVD REFLECTIVITY NANOSPEC 1 WF PER BATCH
LOT
10X MICROSCOPE 2 WAFERS/RUN
<5 DEFECTS PER
FIELD OF VIEW
Rs Four Point Probe 1 WF PER BATCH TREND CHART
LOT
POLY 1 MASK RESIST MASK PRODUCTION
FINAL INSPECT UV and 5 WAFERS
PLASMA ETCH LOG
MICROSCOPE “S” PATTERN SCAN
AT 200X AND 1000X
CRITICAL DIMENSION SEM 1 WAFER (5 SPOTS) X BAR & R

NPN BASE MASK RESIST MASK PRODUCTION

FINAL INSPECT UV and 5 WAFERS LOG
MICROSCOPE “S” PATTERN SCAN
AT 200X

NPN BASE IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

PRODUCTION
STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS LOG
SULFURIC ACID MICROSCOPE “S” PATTERN SCAN
AT 200X

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INSPECTION/TEST METHOD & SAMPLING SPC

FLOW CHART PROCESS STEP DESCRIPTION
CRITERIA EQUIPMENT PLAN TECHNIQUE

CAP OXIDE DEPOSITION OXIDE DEPOSITION VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER X-BAR & R

THICKNESS ELLIPSOMETER 3 WAFERS/CYCLE

POLY 2 DEPOSITION LPCVD VISUAL UV LAMP 100%, MORE THAN TREND CHART
DEPOSITION 2 COLOR CHANGE
IS FAIL

10X MICROSCOPE 2 WAFERS/CYCLE

<5 DEFECTS/PER
FIELD OF VIEW

THICKNESS NANOSPEC 3 WAFERS/CYCLE

POLY 2 MASK RESIST MASK PRODUCTION

FINAL INSPECT UV and 5 WAFERS LOG
PLASMA ETCH MICROSCOPE “S” PATTERN SCAN
AT 200X

WSIX ANNEAL FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER
PRODUCTION
PLDD MASK RESIST MASK FINAL INSPECT UV and 5 WAFERS LOG
MICROSCOPE “S” PATTERN SCAN
AT 200X

PLDD IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

PRODUCTION
STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS LOG
SULFURIC ACID MICROSCOPE “S” PATTERN SCAN
AT 200X
PRODUCTION
NLDD MASK RESIST MASK DEVELOP INSPECT UV and 5 WAFERS LOG
MICROSCOPE 5 SPOTS AT 100X

ANTI PUNCH THROUGH IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART
IMPLANT

NLDD IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

PRODUCTION
STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS LOG
SULFURIC ACID MICROSCOPE “S” PATTERN SCAN
AT 200X

SPACER DEPOSITION OXIDE DEPOSITION VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE
INSPECTION TREND CHART

THICKNESS NANOSPEC 1 WAFER/CYCLE

SPACER ANNEAL FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER
PRODUCTION
SPACER ETCH PLASMA ETCH FINAL INSPECT UV and 5 WAFERS LOG
MICROSCOPE “S” PATTERN SCAN
AT 200X
X BAR & R
OXIDE MEASUREMENT NANOSPEC 2 WAFER (3
SPOTS)

PRODUCTION
P+ S/D MASK RESIST MASK DEVELOP INSPECT UV and 5 WAFERS LOG
MICROSCOPE 5 SPOTS AT 100X

P+ S/D IMPLANT IMPLANT DOSE CHECK THERMAWAFE 2 WAFERS/LOT TREND CHART

VISUAL MICROSCOPE 2 WAFERS/LOT

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INSPECTION/TEST METHOD & SAMPLING SPC

FLOW CHART PROCESS STEP DESCRIPTION
CRITERIA EQUIPMENT PLAN TECHNIQUE
PRODUCTION
STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS LOG
SULFURIC ACID MICROSCOPE “S” PATTERN SCAN
AT 200X
PRODUCTION
N+ S/D IMPLANT MASK RESIST MASK DEVELOP INSPECT UV and 5 WAFERS LOG
MICROSCOPE 5 SPOTS AT 100X

N+ S/D IMPLANT IMPLANT DOSE CHECK THERMAWAVE 2 WAFERS/LOT TREND CHART

VISUAL MICROSCOPE 2 WAFERS/LOT

PRODUCTION
STRIP RESIST RF PLASMA FINAL INSPECT UV and 5 WAFERS LOG
SULFURIC ACID MICROSCOPE “S” PATTERN SCAN
AT 200X

THIN OX DEPOSITION OXIDE DEPOSITION VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE
INSPECTION TREND CHART

THICKNESS NANOSPEC 1 WAFER/CYCLE

S/D ANNEAL FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER

BPSG DEPOSITION OXIDE DEPOSITION VISUAL UV LAMP 3 WAFERS/RUN LOGBOOK

TREND CHART

THICKNESS NANOSPEC 3 WAFERS/CYCLE

WT% B WT% P BIORAD WEEKLY

ANNEAL FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER
THIN FILM PVD SPUTTER 10X MICROSCOPE 2 WAFERS/RUN TREND CHART
DEPOSITION <5 DEFECTS PER
FIELD OF VIEW
Rs FOUR POINT PROBE 1 WAFERS/LOT

PRODUCTION
THIN FILM RESISTOR MASK RESIST MASK FINAL INSPECT UV and 5 WAFERS LOG
MICROSCOPE “S” PATTERN SCAN
PLASMA ETCH AT 200X AND 500X

VISUAL INSPECTION MICROSCOPE 100X “S” PATTERN SCAN

OF THE WAFERS

SI-RICH OXIDE OXIDE DEPOSITION VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE
INSPECTION TREND CHART

THICKNESS NANOSPEC 1 WAFER/CYCLE

RESIST MASK PRODUCTION

CONTACT MASK FINAL INSPECT UV and 5 WAFERS LOG
PLASMA ETCH MICROSCOPE “S” PATTERN SCAN
AT 200X
PRODUCTION
THIN FILM CONTACT MASK RESIST MASK HF FINAL INSPECT UV and 5 WAFERS LOG
ETCHANT BATH MICROSCOPE “S” PATTERN SCAN
AT 200X
TIN BARRIER PVD SPUTTER VISUAL 10X MICROSCOPE 2 WAFERS/RUN TREND CHART
<5 DEFECTS PER
FIELD OF VIEW
Rs FOUR POINT PROBE 1 WAFERS/LOT

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INSPECTION/TEST METHOD & SAMPLING SPC

FLOW CHART PROCESS STEP DESCRIPTION
CRITERIA EQUIPMENT PLAN TECHNIQUE

BARRIER ANNEAL FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER
METAL-1 PVD SPUTTER VISUAL UV LAMP 2 WAFERS/RUN
LOGBOOK
DEPOSITION

10X MICROSCOPE 2 WAFERS/RUN

<5 DEFECTS PER
FIELD OF VIEW
Rs FOUR POINT PROBE 1 WAFERS/LOT TREND CHART

METAL MASK RESIST MASK PRODUCTION

FINAL INSPECT UV and 5 WAFERS LOG
PLASMA ETCH MICROSCOPE “S” PATTERN SCAN
AT 200X AND 1000X

ILD 1 OXIDE DEPOSITION VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE
INSPECTION

THICKNESS NANOSPEC 1 WAFER/CYCLE TREND CHART

STRESS STRESS GAGE 1 WAFER/CYCLE

SOG SPIN-ON-GLASS VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE
INSPECTION TREND CHART

THICKNESS NANOSPEC 1 WAFER/CYCLE

SOG ANNEAL FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER
PRODUCTION
SOG ETCHBACK PLASMA ETCH FINAL INSPECT UV and 5 WAFERS LOG
MICROSCOPE “S” PATTERN SCAN
AT 200X
X BAR & R
OXIDE MEASUREMENT NANOSPEC 2 WAFER (3
SPOTS)

ILD 2 OXIDE DEPOSITION VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE
INSPECTION

THICKNESS NANOSPEC 1 WAFER/CYCLE TREND CHART

STRESS STRESS GAGE 1 WAFER/CYCLE

RESIST MASK PRODUCTION

VIA MASK FINAL INSPECT UV and 5 WAFERS LOG
PLASMA ETCH MICROSCOPE “S” PATTERN SCAN
AT 200X AND 1000X
METAL-2 PVD SPUTTER VISUAL UV LAMP 2 WAFERS/RUN
LOGBOOK
DEPOSITION

10X MICROSCOPE 2 WAFERS/RUN

<5 DEFECTS PER
FIELD OF VIEW
Rs FOUR POINT PROBE 1 WAFERS/LOT

METAL MASK RESIST MASK PRODUCTION

FINAL INSPECT UV and 5 WAFERS LOG
PLASMA ETCH MICROSCOPE “S” PATTERN SCAN
AT 200X AND 1000X

PASSIVATION DEPOSITION OXIDE / PEN VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE
DEPOSITION INSPECTION TREND CHART

THICKNESS NANOSPEC 1 WAFER/CYCLE

INDEX OF REFRACTION ELLIPSOMETER 1 WAFER/WEEK

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INSPECTION/TEST METHOD & SAMPLING SPC

FLOW CHART PROCESS STEP DESCRIPTION
CRITERIA EQUIPMENT PLAN TECHNIQUE

PAD MASK RESIST MASK PRODUCTION

FINAL INSPECT UV and 5 WAFERS LOG
PLASMA ETCH MICROSCOPE “S” PATTERN SCAN
AT 200X

ALLOY FURNACE VISUAL UV LAMP 2 WAFERS/RUN LOGBOOK

MICROSCOPE < 25 DEFECTS PER
INSPECTION WAFER
ELECTRICAL TEST EVALUATE 100% LOGBOOK
ELECTRICAL
PARAMETERS

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