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Bu1508dx PDF

This document provides specifications for the BU1508DX silicon NPN power transistor from Inchange Semiconductor. It is a high voltage, high speed switching transistor in a TO-220F package with a built-in damper diode. It is intended for use in horizontal deflection circuits of color TV receivers. The document lists maximum ratings, characteristics, and package outline dimensions for the transistor.

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Alexis González
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169 views3 pages

Bu1508dx PDF

This document provides specifications for the BU1508DX silicon NPN power transistor from Inchange Semiconductor. It is a high voltage, high speed switching transistor in a TO-220F package with a built-in damper diode. It is intended for use in horizontal deflection circuits of color TV receivers. The document lists maximum ratings, characteristics, and package outline dimensions for the transistor.

Uploaded by

Alexis González
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors BU1508DX

DESCRIPTION
・With TO-220F package
・High voltage
・High speed switching
・Built-in damper diode.

APPLICATIONS
・For use in horizontal deflection circuits of
colour TV receivers.

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220F) and symbol
3 Emitter

Absolute maximum ratings (Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 700 V

VEBO Emitter-base voltage Open collector 7.5 V

IC Collector current 8 A

ICM Collector current (peak) 15 A

IB Base current 4 A

IBM Base current (peak) 6 A

PT Total power dissipation TC=25℃ 35 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -65~150 ℃


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors BU1508DX

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH 700 V

VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.1A 1.0 V

VBEsat Base-emitter saturation voltage IC=4.5A; IB=1.7A 1.3 V

VCE=rated;VBE=0 1.0
ICES Collector cut-off current mA
Tj=125℃ 2.0

IEBO Emitter cut-off current VEB=7.5V; IC=0 140 390 mA

hFE-1 DC current gain IC=1A ; VCE=5V 13

hFE-2 DC current gain IC=4.5A ; VCE=1V 4 5.5 7.0

VF Diode forward voltage IF=4.5A 1.6 2.0 V

CC Collector output capacitance IE=0;f=1MHz;VCB=10V 80 pF

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors BU1508DX

PACKAGE OUTLINE

Fig.2 Outline dimensions

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