Q1.

A transistor has ………………… none of the above

one pn junction
two pn junctions Q10. In a transistor, the base current is about ………….. of
three pn junctions emitter current
four pn junctions 25%
20%
Q2. The number of depletion layers in a transistor is 35 %
………… 5%
four
three Q11. At the base-emitter junctions of a transistor, one
one finds ……………
two a reverse bias
a wide depletion layer
Q3. The base of a transistor is ………….. doped low resistance
heavily none of the above
moderately
lightly Q12. The input impedance of a transistor is ………….
none of the above high
low
Q4. The element that has the biggest size in a transistor very high
is ……………….. almost zero
collector
base Q13. Most of the majority carriers from the emitter
emitter ………………..
collector-base-junction recombine in the base
recombine in the emitter
Q5. In a pnp transistor, the current carriers are …………. pass through the base region to the collector
acceptor ions none of the above
donor ions
free electrons Q14. The current IB is …………
holes electron current
hole current
Q6. The collector of a transistor is …………. doped donor ion current
heavily acceptor ion current
moderately
lightly Q15. In a transistor ………………..
none of the above IC = IE + IB
IB = IC + IE
Q7. A transistor is a …………… operated device IE = IC – IB
current IE = IC + IB
voltage
both voltage and current Q16. The value of α of a transistor is ……….
none of the above more than 1
less than 1
Q8. In a npn transistor, ……………. are the minority 1
carriers none of the above
free electrons
holes Q17. IC = αIE + ………….
donor ions IB
acceptor ions ICEO
ICBO
Q9. The emitter of a transistor is ………………… doped βIB
lightly
heavily Q18. The output impedance of a transistor is ……………..
moderately high
zero 180o
low 90o
very low 270o
0o
Q19. In a tansistor, IC = 100 mA and IE = 100.2 mA. The
value of β is ………… Q27. The power gain in a transistor connected in
100 ……………. arrangement is the highest
50 common emitter
about 1 common base
200 common collector
none of the above
Q20. In a transistor if β = 100 and collector current is 10
mA, then IE is ………… Q28. The phase difference between the input and
100 mA output voltages of a transistor connected in common
100.1 mA emitter arrangement is ………………
110 mA 0o
none of the above 180o
90o
Q21. The relation between β and α is ………….. 270o
β = 1 / (1 – α )
β = (1 – α ) / α Q29. The voltage gain in a transistor connected in
β = α / (1 – α ) ………………. arrangement is the highest
β = α / (1 + α ) common base
common collector
Q22. The value of β for a transistor is generally common emitter
……………….. none of the above
1
less than 1 Q30. As the temperature of a transistor goes up, the
between 20 and 500 base-emitter resistance ……………
above 500 decreases
increases
Q23. The most commonly used transistor arrangement remains the same
is …………… arrangement none of the above
common emitter
common base Q31. The voltage gain of a transistor connected in
common collector common collector arrangement is ………..
none of the above equal to 1
more than 10
Q24. The input impedance of a transistor connected in more than 100
…………….. arrangement is the highest less than 1
common emitter
common collector Q32. The phase difference between the input and
common base output voltages of a transistor connected in common
none of the above collector arrangement is ………………
180o
Q25. The output impedance of a transistor connected in 0o
……………. arrangement is the highest 90o
common emitter 270o
common collector
common base Q33. IC = β IB + ………..
none of the above ICBO
IC
Q26. The phase difference between the input and ICEO
output voltages in a common base arrangement is αIE
…………….
Q34. IC = [α / (1 – α )] IB + …………. more than
ICEO less than
ICBO the same as
IC none of the above
(1 – α ) IB
Q43. A heat sink is generally used with a transistor to
Q35. IC = [α / (1 – α )] IB + […….. / (1 – α )] …………
ICBO increase the forward current
ICEO decrease the forward current
IC compensate for excessive doping
IE prevent excessive temperature rise

Q36. BC 147 transistor indicates that it is made of Q44. The most commonly used semiconductor in the
………….. manufacture of a transistor is ………….
germanium germanium
silicon silicon
carbon carbon
none of the above none of the above

Q37. ICEO = (………) ICBO Q45. The collector-base junction in a transistor has
β ……………..
1+α forward bias at all times
1+β reverse bias at all times
none of the above low resistance
none of the above
Q38. A transistor is connected in CB mode. If it is not
connected in CE mode with same bias voltages, the Q46. When transistors are used in digital circuits they
values of IE, IB and IC will ………….. usually operate in the ………….
remain the same active region
increase breakdown region
decrease saturation and cutoff regions
none of the above linear region

Q39. If the value of α is 0.9, then value of β is ……….. Q47. Three different Q points are shown on a dc load
9 line. The upper Q point represents the ………….
0.9 minimum current gain
900 intermediate current gain
90 maximum current gain
cutoff point
Q40. In a transistor, signal is transferred from a ……………
circuit
Q48. A transistor has a of 250 and a base current,
high resistance to low resistance
low resistance to high resistance IB, of 20 A. The collector current, IC, equals to
high resistance to high resistance …………….
low resistance to low resistance 500 μA
5 mA
Q41. The arrow in the symbol of a transistor indicates 50 mA
the direction of …………. 5A
electron current in the emitter
electron current in the collector Q49. A current ratio of IC/IE is usually less than one and
hole current in the emitter is called …………
donor ion current beta
theta
Q42. The leakage current in CE arrangement is ……………. alpha
that in CB arrangement omega
Q50. With the positive probe on an NPN base, an VB
ohmmeter reading between the other transistor IC
terminals should be ……
open Q58. A transistor may be used as a switching device or
infinite as a ………….
low resistance fixed resistor
high resistance tuning device
rectifier
Q51. In a CE configuration, an emitter resistor is used variable resistor
for ……
stabilization Q59. If an input signal ranges from 20–40 A
ac signal bypass (microamps), with an output signal ranging from .5–1.5
collector bias mA (milliamps), what is the ac beta?
higher gain 0.05
20
Q52. Voltage-divider bias provides ………. 50
an unstable Q point 500
a stable Q point
a Q point that easily varies with changes in the Q60. Beta’s current ratio is ……..
transistor’s current gain IC/IB
a Q point that is stable and easily varies with changes in IC/IE
the transistor’s current gain IB/IE
IE/IB
Q53. To operate properly, a transistor’s base-emitter
junction must be forward biased with reverse bias Q61. A collector characteristic curve is a graph showing
applied to which junction? ………..
collector-emitter emitter current (IE) versus collector-emitter voltage (VCE)
base-collector with (VBB) base bias voltage held constant
base-emitter collector current (IC) versus collector-emitter voltage
collector-base (VCE) with (VBB) base bias voltage held constant
collector current (IC) versus collector-emitter voltage
Q54. The ends of a load line drawn on a family of curves (VC) with (VBB) base bias voltage held constant
determine …… collector current (IC) versus collector-emitter voltage
saturation and cutoff (VCC) with (VBB) base bias voltage held constant
the operating point
the power curve Q62. With low-power transistor packages, the base
the amplification factor terminal is usually the ……….
Q55. If VCC = +18 V, voltage-divider resistor R 1 is 4.7 k , tab end
and R2 is 1500 , then the base bias voltage is ………. middle
8.7 V right end
4.35 V stud mount
2.9 V
0.7 V Q63. When a silicon diode is forward biased, V BE for a
CE configuration is ……..
Q56. The C-B configuration is used to provide which voltage-divider bias
type of gain? 0.4 V
voltage 0.7 V
current emitter voltage
resistance
power Q64. What is the current gain for a common-base
configuration where IE = 4.2 mA and IC = 4.0 mA?
Q57. The Q point on a load line may be used to 16.8
determine ………… 1.05
VC 0.2
VCC 0.95
 Q72. The input/output relationship of the common-
Q65. With a PNP circuit, the most positive voltage is collector and common-base amplifiers is ………..
probably ………… 270 degrees
ground 180 degrees
VC 90 degrees
VBE 0 degrees
VCC
Q73. If a transistor operates at the middle of the dc load
Q66. If a 2 mV signal produces a 2 V output, what is the line, a decrease in the current gain will move the Q
voltage gain? point ………….
0.001 off the load line
0.004 nowhere
100 up
1000 down

Q67. Most of the electrons in the base of an NPN Q74. Which is the higher gain provided by a CE
transistor flow ………… configuration?
out of the base lead voltage
into the collector current
into the emitter resistance
into the base supply power

Q68. In a transistor, collector current is controlled by Q75. What is the collector current for a CE configuration
……….. with a beta of 100 and a base current of 30 A?
collector voltage
30 A
base current
collector resistance 0.3 A
all of the above 3 mA
3 MA
Q69. Total emitter current is …………
IE – IC
IC + IE
IB + IC
IB – IC

Q70. Often a common-collector will be the last stage

before the load; the main function(s) of this stage is to
………….
provide voltage gain
provide phase inversion
provide a high-frequency path to improve the frequency
response
buffer the voltage amplifiers from the low-resistance
load and provide impedance matching for maximum
power transfer

Q71. For a CC configuration to operate properly, the

collector-base junction should be reverse biased, while
forward bias should be applied to ……………
junction.
collector-emitter
base-emitter
collector-base
cathode-anode