SGT40N60NPFDPN_Datasheet

40A, 600V FIELD STOP IGBT

DESCRIPTION

SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum

performance for induction Heating, UPS, SMPS and PFC application.

FEATURES

 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A

 Low conduction loss
 Fast switching
 High input impedance

NOMENCLATURE

ORDERING INFORMATION

Part No. Package Marking Material Packing

SGT40N60NPFDPN TO-3P 40N60NPFD Pb free Tube

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Parameter Symbol Ratings Units

Collector to Emitter Voltage VCE 600 V
Gate to Emitter Voltage VGE ±20 V
TC=25°C 80
Collector Current IC A
TC=100°C 40
Pulsed Collector Current ICM 120 A
290 W
Maximum Power Dissipation (TC=25°C) PD
2.32 W/°C
Operating Junction Temperature TJ -55～+150 °C
Storage Temperature Range Tstg -55～+150 °C

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Microelectronics SGT40N60NPFDPN_Datasheet
THERMAL CHARACTERISTICS

Parameter Symbol Ratings Units

Thermal Resistance, Junction to Case (IGBT) RθJC 0.24 °C/W
Thermal Resistance, Junction to Case (FRD) RθJC 1.4 °C/W
Thermal Resistance, Junction to Ambient RθJA 35.5 °C/W

ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted)

Parameter Symbol Test conditions Min. Typ. Max. Units

Collector to Emitter Breakdown
BVCE VGE=0V,IC=250uA 600 -- -- V
Voltage
C-E Leakage Current ICES VCE=600V,VGE=0V -- -- 200 uA
G-E Leakage Current IGES VGE=20V,VCE=0V -- -- ±400 nA
G-E Threshold Voltage VGE(th) IC=250uA,VCE=VGE 4.0 5.0 6.5 V
IC=40A,VGE=15V -- 1.8 2.5 V
Collector to Emitter Saturation
VCE(sat) IC=40A,VGE=15V
Voltage -- 2.1 -- V
TC=125°C
Input Capacitance Cies VCE=30V -- 1850 --
Output Capacitance Coes VGE=0V -- 180 -- pF
Reverse Transfer Capacitance Cres f=1MHz -- 50 --
Turn-On Delay Time Td(on) -- 18 --
Rise Time Tr VCE=400V -- 80 --
ns
Turn-Off Delay Time Td(off) IC=40A -- 110 --
Fall Time Tf Rg=10Ω -- 105 --
Turn-On Switching Loss Eon VGE=15V -- 1.87 --
Turn-Off Switching Loss Eoff Inductive Load, -- 0.68 -- mJ
Total Switching Loss Est -- 2.55 --
Total Gate Charge Qg -- 100 --
VCE = 300V, IC=20A,
Gate to Emitter Charge Qge -- 11 --
VGE = 15V nC
Gate to Collector Charge Qgc -- 52 --

ELECTRICAL CHARACTERISTICS OF FRD (TC = 25°C unless otherwise noted)

Parameter Symbol Test conditions Min. Typ. Max. Units

IF = 20A TC=25°C -- 1.9 2.6
Diode Forward Voltage Vfm V
IF = 20A TC=125°C -- 1.5 --
Diode Reverse Recovery Time Trr IES =20A, dIES/dt=200A/μs -- 32 -- ns
Diode Reverse Recovery Charge Qrr IES =20A, dIES/dt=200A/μs -- 74 -- nC

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TYPICAL CHARACTERISTICS CURVE

Figure 1. Typical output characteristics Figure 2. Typical output characteristics

120 120
TC=25°C TC=125°C 20V
20V 15V
100 100

Collector current – IC(A)

Collector current – IC(A)

15V
12V 12V
80 80
10V 10V

60 60

40 40
VGE=8V
VGE=8V
20 20

0 0
0 1.5 3.0 4.5 6.0 0 1.5 3.0 4.5 6.0

Collector-Emitter voltage – VCE(V) Collector-Emitter voltage– VCE(V)

Figure 3. Typical saturation voltage characteristic Figure 4. Transmission characteristic

120 120
Emitter in Emitter in
100 common 100 common
Collector current – IC(A)

Collector current – IC(A)

VGE=15V VGE=20V
TC=25°C

80 80

60 TC=125°C 60
TC=25°C
40 40
TC=125°C

20 20

0 0
0 1 2 3 4 5 4 5 6 7 8 9 10 11 12

Collector-Emitter voltage – VCE(V) Gate-Emitter voltage – VGE(V)

Figure 5. Saturation voltage vs. VGE Figure 6. Saturation voltage vs. VGE
20 20
Emitter in Emitter in
Collector-Emitter voltage – VCE(V)

Collector-Emitter voltage– VCE(V)

common common
TC=25°C TC=125°C
16 16

12 80A 12 80A

8 40A
8 40A
IC=20A IC=20A

4 4

0 0
4 8 12 16 20 4 8 12 16 20

Gate-Emitter voltage – VGE(V) Gate-Emitter voltage– VGE(V)

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TYPICAL CHARACTERISTICS CURVE (CONTINUED)

Figure 7. Capacitance characteristic Figure 8. Gate charge characteristic

5000 15
Emitter in
common Emitter in
common

Gate-Emitter voltage - VGE(V)

VGE=0V, f=1MHz VCC=100V
4000 TC=25°C 12 TC=25°C
Cies
Capacitance (pF)

3000 200V
9

Coes
300V
2000 6
Cres

1000 3

0 0
0.1 1.0 10.0 30.0 0 30 60 90 120

Collector-Emitter voltage – VCE(V) Gate charge – QG(nC)

Figure 9. Turn-on characteristic vs. Gate resistance Figure 10. Turn-off characteristic vs. Gate resistance
200 5500
Emitter in common Emitter in common
VCC=400V, VGE=15V, IC=40A VCC=400V, VGE=15V, IC=40A
100 TC=25°C TC=25°C
1000
Switching time [ns]

Switching time [ns]

tr

td(off)

100 tf
td(on)

10 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate resistance - RG(Ω) Gate resistance - RG(Ω)

Figure 11. Switching loss vs. Gate resistance Figure 12. Forward characteristic
10.0 80.0
Emitter in common
VCC=400V, VGE=15V, IC=40A
TC=25°C
Forward current - IF(A)

TC=125°C
Switching loss [mJ]

10.0
Eon
TC=25°C

1.0 Eoff
1.0

0.3 0.2
0 10 20 30 40 50 0 1 2 3 4
Gate resistance - RG(Ω) Forward voltage - VF(V)

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TYPICAL CHARACTERISTICS CURVE (CONTINUED)

Figure 14. Transient Thermal

Figure 13. SOA Characteristics
Impedance of IGBT
102 0.25
Single Pulse Curve

Peak Power Impedance (°C/W)

90%
0.2
Collector Current - IC(A)

101 100ms
70%
DC 10ms
1ms 0.15

50%

0.1
100 30%

Single Nonrepetitive Pulse TC = 25°C 0.05

Curves must be derated
10%
linearly with increase 5%
in temperature 2%
10-1 0
100 101 102 103 10-5 10-4 10-3 10-2 10-1

Collector-Emitter Voltage - VCE(V) On-Pulse Duration(Sec)

PACKAGE OUTLINE

TO-3P Unit:mm
15.5±0.50

8.5～10.0 1.2～1.80

Φ 3.0～3.7
19.5～21.0
39.0～41.5

2.6～3.8

1.2～2.0
2.0±0.3
3.0±0.3
19.5～20.0

1.0±0.3

0.6±0.2

5.45TYP
4.4～5.2

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.1

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Microelectronics SGT40N60NPFDPN_Datasheet
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information is complete and current.
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Part No.: SGT40N60NPFDPN Document Type: Datasheet

Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.1 Author: Zhang Kefeng

Revision History:
1. Add pin No.
2. Modify the package outline of TO-3P
Rev.: 1.0 Author: Zhang Kefeng
Revision History:
1. First release

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