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1. GaAs has a lower electron effective mass than Si and would therefore produce photons more efficiently through electron-hole recombination. The photons from GaAs would have an energy of around 1.5 eV, corresponding to a wavelength of around 800 nm in the infrared range. 2. For a hypothetical semiconductor with an intrinsic carrier concentration of 1.0 x 1010 cm-3 at 300 K, and conduction and valence band effective densities of states of 1019 cm-3, the band gap would be around 1.5 eV. If doped with 1 x 1016 donors/cm3, the equilibrium electron concentration would be 1 x 1016 cm-3 and hole concentration 1 x 1010 cm-3.

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208 views2 pages

Assignment

1. GaAs has a lower electron effective mass than Si and would therefore produce photons more efficiently through electron-hole recombination. The photons from GaAs would have an energy of around 1.5 eV, corresponding to a wavelength of around 800 nm in the infrared range. 2. For a hypothetical semiconductor with an intrinsic carrier concentration of 1.0 x 1010 cm-3 at 300 K, and conduction and valence band effective densities of states of 1019 cm-3, the band gap would be around 1.5 eV. If doped with 1 x 1016 donors/cm3, the equilibrium electron concentration would be 1 x 1016 cm-3 and hole concentration 1 x 1010 cm-3.

Uploaded by

Soham Kundu
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© © All Rights Reserved
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EC21107@VD Semiconductor Devices 

Continuous Assessment-3

1. Consider the band structure of Si and GaAs as shown in lecture-3.


a. Which material appears to have the lowest (conduction band) electron effective
mass, Si or GaAs?
b. Which of these would you expect to produce photons (light) more efficiently through
electron-hole recombination? What would you expect the energy of the emitted
photons to be? What would be their wavelength in µm? Would these be visible,
infrared, or ultraviolet?
c. How many equivalent conduction band minima do we have for Si? GaAs?
d. Neglecting differences in electron scattering rates in the two materials, would you
expect Si or GaAs to have the greatest electron mobility µn?
e. If a constant force were applied in the [100] direction for a short period of time on
an electron initially located at the conduction band minimum of each
semiconductor and if scattering were neglected, would the magnitude of change in
k in Si be greater, equal to, or smaller than the magnitude of the change in k in
GaAs for the same force F?
2. A hypothetical semiconductor has an intrinsic carrier concentration of 1.0 X 1010/cm3at
300 K, it has conduction and valence band effective densities of states Nc and Nv, both
equal to 1019/cm3.
a. What is the band gap Eg ?
b. If the semiconductor is doped with Nd = 1 X 1016 donors/cm3, what are the
equilibrium electron and hole concentrations at 300K?
c. If the same piece of semiconductor, already having Nd = 1 X 1016 donors/cm3, is
also doped with Na = 2 X 1016 acceptors/cm3, what are the new equilibrium electron
and hole concentrations at 300 K?
d. Consistent with your answer to part (c), what is the Fermi level position with
respect to the intrinsic Fermi level, EF-Ei.
3. What is the difference between density of states and effective density of states, and why is
the latter such a useful concept?
4. How do you measure mobility and carrier concentration?
5. Calculate the approximate donor binding energy for GaAs (εr = 13.2, m*n = 0.067 m0).
6. An unknown semiconductor has Eg = 1.1 eV and Nc = Nv. It is doped with 1015 cm-3 donors,
where the donor level is 0.2 eV below Ec. Given that EF is 0.25 eV below Ec, calculate ni
and the concentration of electrons and holes in the semiconductor at 300 K.
7. At room temperature, an unknown indirect band gap, intrinsic, cubic semiconductor has
the following band structure: There are 6 X minima along the (100) directions. If m*(Γ) =
0.065mo, m*(X) = 0.30 mo (for each of the X minima) and m*h = 0.47 mo, at what
temperature is the number of electrons in the Γ minima and the X minima equal if the Γ to
X energy separation is 0.35 eV, and the bandgap is 1.7 eV (m0 = free electron mass)?
8. Calculate the band gap of Si from the plot of ni vs. 1000/T (figure-1). State the assumption
made, if any, and source of error.
9. A Si sample contains 1016 cm-3 In acceptor atoms and a certain number of shallow donors.
The In acceptor level is 0.16 eV above Ev, and EF is 0.26 eV above Ev at 300 K. How many
(cm-3) In atoms are un-ionized (i.e.,neutral)?
EC21107@VD Semiconductor Devices 

 
Figure 1: Intrinsic carrier concentration for Ge, Si, and GaAs as a function of inverse temperature

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