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    2 N 3054

    Uploaded by

    yogendra.sheth
    This document provides specifications for the 2N3054 and 2N3054A silicon NPN power transistors from SavantIC Semiconductor. The transistors come in a TO-66 package and are designed for general purpose switching and amplifier applications. Key specifications include maximum ratings for collector current, base current and power dissipation. Thermal and electrical characteristics like saturation voltage, current gain and cutoff current are also listed. Dimensional outlines and pin descriptions are provided.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2 N 3054

    Uploaded by

    yogendra.sheth
    146 views4 pages
    This document provides specifications for the 2N3054 and 2N3054A silicon NPN power transistors from SavantIC Semiconductor. The transistors come in a TO-66 package and are designed for general purpose switching and amplifier applications. Key specifications include maximum ratings for collector current, base current and power dissipation. Thermal and electrical characteristics like saturation voltage, current gain and cutoff current are also listed. Dimensional outlines and pin descriptions are provided.

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    Power transistor 2N3054

    Original Title

    2n3054

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    This document provides specifications for the 2N3054 and 2N3054A silicon NPN power transistors from SavantIC Semiconductor. The transistors come in a TO-66 package and are designed for general purpose switching and amplifier applications. Key specifications include maximum ratings for collector current, base current and power dissipation. Thermal and electrical characteristics like saturation voltage, current gain and cutoff current are also listed. Dimensional outlines and pin descriptions are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    146 views4 pages

    2 N 3054

    Uploaded by

    yogendra.sheth
    This document provides specifications for the 2N3054 and 2N3054A silicon NPN power transistors from SavantIC Semiconductor. The transistors come in a TO-66 package and are designed for general purpose switching and amplifier applications. Key specifications include maximum ratings for collector current, base current and power dissipation. Thermal and electrical characteristics like saturation voltage, current gain and cutoff current are also listed. Dimensional outlines and pin descriptions are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2N3054 2N3054A

    DESCRIPTION
    ·With TO-66 package

    APPLICATIONS
    ·Designed for general purpose switching
    and amplifier applications

    PINNING (See Fig.2)

    PIN DESCRIPTION

    1 Base

    2 Emitter
    Fig.1 simplified outline (TO-66) and symbol
    3 Collector

    Absolute maximum ratings(Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 90 V

    VCEO Collector-emitter voltage Open base 55 V

    VEBO Emitter-base voltage Open collector 7 V

    IC Collector current 4 A

    IB Base current 2 A

    2N3054 25
    PD Power dissipation TC=25 W
    2N3054A 75

    Tj Junction temperature 200

    Tstg Storage temperature -65~200

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    2N3054 7.0
    Rth j-C Thermal resistance junction to case /W
    2N3054A 2.33
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2N3054 2N3054A

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO Collector-emitter breakdown voltage IC=0.1A ; IB=0 55 V

    VCEsat-1 Collector-emitter saturation voltage IC=0.5A ;IB=50mA 1.0 V

    VCEsat-2 Collector-emitter saturation voltage IC=3A; IB=1A 6.0 V

    VBE Base -emitter on voltage IC=0.5A ; VCE=4V 1.7 V

    VCE=90V;VBE(off)=1.5V 1.0
    ICEV Collector cut-off current mA
    TC=150 6.0

    ICEO Collector cut-off current VCE=30V; IB=0 0.5 mA

    IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA

    hFE-1 DC current gain IC=0.1A ; VCE=10V 40

    hFE-2 DC current gain IC=1A ; VCE=2V 8 80

    fT Transition frequency IC=0.2A ; VCE=10V;f=1MHz 3.0

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2N3054 2N3054A

    PACKAGE OUTLINE

    Fig.2 Outline dimensions

    3
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2N3054 2N3054A

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