C1815 ToshibaSemiconductor PDF

2SC1815
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications Unit: mm
• High voltage and high current: VCEO = 50 V (min),

IC = 150 mA (max)
• Excellent hFE linearity: hFE (2) = 100 (typ.)
at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
• Low noise: NF = 1dB (typ.) at f = 1 kHz
• Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Collector-base voltage VCBO 60 V

Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 50 mA JEDEC TO-92
Collector power dissipation PC 400 mW
JEITA SC-43
Junction temperature Tj 125 °C
TOSHIBA 2-5F1B
Storage temperature range Tstg −55~125 www.DataSheet.co.kr
°C
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA

Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA
hFE (1)
VCE = 6 V, IC = 2 mA 70 ⎯ 700
DC current gain (Note)
hFE (2) VCE = 6 V, IC = 150 mA 25 100 ⎯
Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V
Base-emitter saturation voltage VBE (sat) IC = 100 mA, IB = 10 mA ⎯ ⎯ 1.0 V
Transition frequency fT VCE = 10 V, IC = 1 mA 80 ⎯ ⎯ MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 2.0 3.5 pF
VCE = 10 V, IE = −1 mA
Base intrinsic resistance rbb’ ⎯ 50 ⎯ Ω
f = 30 MHz
VCE = 6 V, IC = 0.1 mA
Noise figure NF ⎯ 1.0 10 dB
f = 1 kHz, RG = 10 kΩ
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1 2007-11-01
Datasheet pdf - http://www.DataSheet4U.net/

2SC1815
www.DataSheet.co.kr
2 2007-11-01

2SC1815
www.DataSheet.co.kr
3 2007-11-01

2SC1815
RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
www.DataSheet.co.kr
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
4 2007-11-01

C1815 ToshibaSemiconductor PDF

Uploaded by

Copyright:

Available Formats

C1815 ToshibaSemiconductor PDF

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

C1815 ToshibaSemiconductor PDF

Uploaded by

Copyright:

Available Formats

2SC1815

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

• High voltage and high current: VCEO = 50 V (min),

Absolute Maximum Ratings (Ta = 25°C)

Collector-base voltage VCBO 60 V

Electrical Characteristics (Ta = 25°C)

Collector cut-off current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA

Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700

Datasheet pdf - http://www.DataSheet4U.net/

Datasheet pdf - http://www.DataSheet4U.net/

Datasheet pdf - http://www.DataSheet4U.net/

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.

Datasheet pdf - http://www.DataSheet4U.net/

You might also like