BSS 100

SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V

Pin 1 Pin 2 Pin 3

S G D

Type VDS ID RDS(on) Package Marking

BSS 100 100 V 0.22 A 6Ω TO-92 SS 100
Type Ordering Code Tape and Reel Information
BSS 100 Q62702-S499 E6288
BSS 100 Q62702-S007 E6296
BSS 100 Q62702-S206 E6325

Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS 100 V
Drain-gate voltage V
DGR
RGS = 20 kΩ 100
Gate source voltage VGS ± 14
Gate-source peak voltage,aperiodic Vgs ± 20
Continuous drain current ID A
TA = 33 °C 0.22
DC drain current, pulsed IDpuls
TA = 25 °C 0.9
Power dissipation Ptot W
TA = 25 °C 0.63

Semiconductor Group 1 12/05/1997

 BSS 100

Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) RthJA ≤ 200 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 100 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 0.8 1.5 2
Zero gate voltage drain current IDSS
VDS = 100 V, VGS = 0 V, Tj = 25 °C - 0.1 1 µA
VDS = 100 V, VGS = 0 V, Tj = 125 °C - 2 60
VDS = 20 V, VGS = 0 V, Tj = 25 °C - 1 10 nA
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 1 10
Drain-Source on-state resistance RDS(on) Ω
VGS = 10 V, ID = 0.22 A - 3.5 6
VGS = 4.5 V, ID = 0.22 A - 5 10

Semiconductor Group 2 12/05/1997

 BSS 100

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 0.22 A 0.08 0.22 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 65 85
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 10 15
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 4 6
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RG = 50 Ω - 5 8
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RG = 50 Ω - 5 8
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RG = 50 Ω - 10 13
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 0.28 A
RG = 50 Ω - 12 16

Semiconductor Group 3 12/05/1997

 BSS 100

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TA = 25 °C - - 0.22
Inverse diode direct current,pulsed ISM
TA = 25 °C - - 0.9
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 0.44 A - 0.9 1.3

Semiconductor Group 4 12/05/1997

 BSS 100

Power dissipation Drain current

Ptot = ƒ(TA) ID = ƒ(TA)
parameter: VGS ≥ 10 V

0.70 0.24

W A
0.60
0.20
Ptot 0.55 ID
0.18
0.50
0.16
0.45

0.40 0.14

0.35 0.12

0.30 0.10
0.25
0.08
0.20
0.06
0.15
0.04
0.10

0.05 0.02
0.00 0.00
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TA TA

Safe operating area ID=f(VDS) Drain-source breakdown voltage

parameter : D = 0.01, TC=25°C V(BR)DSS = ƒ(Tj)

120
V
116
V(BR)DSS114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 °C 160
Tj

Semiconductor Group 5 12/05/1997

 BSS 100

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: tp = 80 µs, Tj = 25 °C

0.50 19
Ptot = 1W j
lki h g f Ω a b c d
A
VGS [V] 16
e
ID 0.40 a 2.0 RDS (on)
b 2.5
14
0.35 c 3.0
d 3.5
12
0.30 e 4.0
f 4.5
10
0.25 d g 5.0
h 6.0
i 7.0
8
0.20
c j 8.0
e
0.15 k 9.0 6
l 10.0 f
g
4 h
0.10 ki j
b VGS [V] =
0.05 2 a b c d e f g h i j k
a 2.5
2.0 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
0.00 0
0.0 1.0 2.0 3.0 4.0 5.0 V 6.5 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 A 0.50
VDS ID

Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥ 2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

1.0 0.40

A
S

ID 0.8 gfs
0.30
0.7

0.25
0.6

0.5 0.20

0.4
0.15

0.3
0.10
0.2

0.05
0.1

0.0 0.00
0 1 2 3 4 5 6 7 8 V 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8
VGS ID

Semiconductor Group 6 12/05/1997

 BSS 100

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj) VGS (th) = ƒ(Tj)
parameter: ID = 0.22 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

15 4.6
Ω V
13 4.0
RDS (on) 12 VGS(th)
3.6
11
3.2
10
9 2.8

8 2.4
98%
7 98%
2.0
6
typ
5 1.6
typ
4 1.2
2%
3
0.8
2
0.4
1
0 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS=0V, f = 1 MHz parameter: Tj, tp = 80 µs

10 3 10 0

pF A
C IF

10 2 10 -1

Ciss

10 1 10 -2
Coss
Tj = 25 °C typ
Tj = 150 °C typ
Crss
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 0 10 -3
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 12/05/1997