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Silicon PNP Power Transistors: 2SA1306 2SA1306A 2SA1306B

The document provides product specifications for SavantIC Semiconductor's silicon PNP power transistors - models 2SA1306, 2SA1306A, and 2SA1306B. The transistors come in a TO-220Fa package and are intended for power amplifier and driver stage amplifier applications. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. Electrical characteristics such as collector-emitter saturation voltage, base-emitter voltage, current gain, and transition frequency are also listed. Dimensional outlines of the packaging are provided.

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117 views3 pages

Silicon PNP Power Transistors: 2SA1306 2SA1306A 2SA1306B

The document provides product specifications for SavantIC Semiconductor's silicon PNP power transistors - models 2SA1306, 2SA1306A, and 2SA1306B. The transistors come in a TO-220Fa package and are intended for power amplifier and driver stage amplifier applications. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. Electrical characteristics such as collector-emitter saturation voltage, base-emitter voltage, current gain, and transition frequency are also listed. Dimensional outlines of the packaging are provided.

Uploaded by

Hung Kd
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B

DESCRIPTION
·With TO-220Fa package
·Complement to type
2SC3298,2SC3298A,2SC3298B

APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications

PINNING

PIN DESCRIPTION

1 Emitter

2 Collector

3 Base

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SA1306 -160

VCBO Collector-base voltage 2SA1306A Open emitter -180 V

2SA1306B -200

2SA1306 -160

VCEO Collector-emitter voltage 2SA1306A Open base -180 V

2SA1306B -200

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -1.5 A

IB Base current -0.15 A

PC Collector power dissipation TC=25 20 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2SA1306 -160

Collector-emitter
V(BR)CEO 2SA1306A IC=10mA , IB=0 -180 V
breakdown voltage

2SA1306B -200

VCEsat Collector-emitter saturation voltage IC=-0.5A, IB=-50mA -1.5 V

VBE Base-emitter voltage IC=-0.5A ,VCE=-5V -1.0 V

ICBO Collector cut-off current VCB=-160V, IE=0 -1.0 µA

IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 µA

hFE DC current gain IC=-0.1A ; VCE=-5V 70 240

Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 30 pF

fT Transition frequency IC=-0.1A ; VCE=-10V 100 MHz

hFE Classifications

O Y

70-140 120-240

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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