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Sample Question 3

The document contains 11 questions related to semiconductor devices and materials. Question 1 asks about comparing pinch-off voltages and saturation current for a JFET. Question 2 asks about internal and external pinch-off voltages and depletion widths for a p-channel JFET. Question 3 asks about internal pinch-off voltage and gate voltage for channel depletion in an n-channel JFET. The remaining questions ask about band diagrams, capacitances, threshold voltages, and other parameters for diodes, MOS capacitors, and other semiconductor structures.

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367 views11 pages

Sample Question 3

The document contains 11 questions related to semiconductor devices and materials. Question 1 asks about comparing pinch-off voltages and saturation current for a JFET. Question 2 asks about internal and external pinch-off voltages and depletion widths for a p-channel JFET. Question 3 asks about internal pinch-off voltage and gate voltage for channel depletion in an n-channel JFET. The remaining questions ask about band diagrams, capacitances, threshold voltages, and other parameters for diodes, MOS capacitors, and other semiconductor structures.

Uploaded by

lavish
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Question -1

Assume JFET shown in figure is Si and p+ regions


doped with 1018 acceptors/cm3 and a channel with
1016 donors/cm3. If the channel half-width a is
1um, compare Vp with V0. What voltage VGD is
required to cause pinch off when V0 is included?
With VG = -3V, at what value of VD does the
current saturate?
Question -2
A p-channel silicon JFET at T = 300K has doping
concentrations of Nd = 5 x 1018 cm-3 and Na = 3 x 1016 cm-3.
The channel thickness dimension is a = 0.5 m.
(a) Compute the internal pinchoff voltage Vp0 and the pinchoff
voltage Vp.
(b) Determine the minimum undepleted channel thickness, a –
w for VGS = 1V and for VDS = 0, -2.5V and -5 V.
Question 3
Consider an n-channel silicon JFET with the
following parameters: Na = 3 x 1018 cm-3 , Nd = 8
x 1016 cm-3 and a = 0.5 m.
(a) calculate the internal pinch off voltage.
(b) Determine the gate voltage required such
that the un-depleted channel is 0.40 um.
Question - 4
A Schottky barrier is formed between a metal
having a work-function of 4.3eV and p-type Si
(electron affinity = 4eV). The acceptor doping in Si
is 1017 cm-3.
(a) Draw the equilibrium band diagram, showing
the numerical value for 𝑞𝑉0
(b) Draw the band diagram for 0.3V forward bias
and 2V reverse bias
Question - 5
A Si P-N junction diode with area = 104 cm2 has NA
= 1017 cm-3 and ND = 1017 cm-3. Assume 𝜇𝑛 =
1500 𝑐𝑚2 𝑉𝑠𝑒𝑐, 𝜇𝑝 = 450 𝑐𝑚2 𝑉𝑠𝑒𝑐 and 𝜏𝑝 = 𝜏𝑛 =
2𝑛𝑠.
a) Find the reverse saturation current
b) Find the forward bias current at an applied bias
of 0.3V
Question-6
Consider a Si p-channel JFET with channel doping of
1017 𝑐𝑚−3 . The gate is assumed to be heavily doped
≈ 𝑁𝑐 . Assume that the channel length is 10𝜇𝑚 and
the metallurgical half-width of the channel is 0.3𝜇𝑚.
At room temperature of 25℃,
a) What is the resistance of the channel per unit
micron of Z when 𝑉𝐺𝑆 = +2𝑉 and 𝑉𝐷𝑆 = −10𝑚𝑉.
b) At what drain voltage does the channel pinch off?
𝜇𝑛 = 800 𝑐𝑚2 𝑉𝑠, 𝜇𝑝 = 450 𝑐𝑚2 𝑉𝑠, 𝜏𝑛 = 𝜏𝑝 = 2𝑛𝑠,
𝐸𝐺 = 1.1𝑒𝑉, 𝑛𝑖 = 1.5 × 1010 𝑐𝑚−3 , 𝑘𝑆𝑖 = 11.8
Question -7
Calculate the capacitance of a parallel plate capacitor with
a plate separation of 1nm in vacuum?
i. If the space between the plates is filled with 𝐴𝑙2 𝑂3 ,
an insulator with a relative dielectric constant 𝑘 = 9,
what is the new capacitance of the structure?
ii. What is the electric field in the dielectric for an
applied voltage 𝑉𝐴 = 1𝑉?
iii. What is the charge stored in the capacitor? What is
the density of electrons on the capacitor plate?
Question - 8
Sketch the low and high-frequency behavior (and
explain the difference) of an MOS capacitor with a
high-k dielectric (𝜖𝑟 = 25) on a p-type Si substrate
doped at 1017 𝑐𝑚−3 . Label the accumulation,
depletion and inversion regions. If the high
frequency capacitance in accumulation is 2𝜇𝐹/𝑐𝑚2 ,
calculate the dielectric thickness and the minimum
high frequency capacitance.
Question - 9
For an ideal (Φ𝑀𝑆 = 0) SiO2/Si MOS capacitor with
an oxide thickness of 5nm and 𝑁𝐴 = 1017 𝑐𝑚−3 ,
find the applied voltage and the electric field at the
interface required to cause onset of strong
inversion. Draw the band diagram of this system at
equilibrium and at strong inversion.
Question - 10
A MOSCAP is formed on Si with the following
stack of p+-poly Si/SiO2/p-Si with an oxide
thickness of 10nm. The acceptor doping in the
substrate is 1016 𝑐𝑚−3 .
– If the net charge in the substrate is
+ 1012 𝑐𝑚−2 , find the field in the oxide? In
which region is the capacitor biased in?
– Calculate the threshold voltage of the
MOSCAP?
Question-11
Calculate the ideal VT of a MOSCAP formed by a
N+Poly Si gate which is very heavily doped
(Efm=EC) on p-Si doped 1016 𝑐𝑚−3 . The oxide
thickness used is 10nm.
Given, 𝑘𝑇 = 0.0259𝑒𝑉 ; 𝜖0 = 8.85 × 10−14 𝐹 𝑐𝑚
Relative dielectric constant 𝑘𝑜𝑥 = 3.9; 𝑘𝑆𝑖 = 11.8

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