Assignment Wlec Bee 211

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Different Types of Diodes:

Based on what I understand


By Rexan Myrrh Calanao

1. Tunnel Diode
It is a type of diode that makes use of the quantum mechanics principle “tunneling", hence the
name. In layman’s term, tunneling means a moving particle that is able to pass through from one side
to the other of a barrier potential even though there is an insufficient energy. Thus, tunnel diodes are
used in low voltage high frequency applications. Oftentimes it is called an Esaki diode named after the
scientist, Leo Esaki, who discovered the tunneling effect on semiconductors.

Figure 1. (a) A circuit symbol of a tunnel diode

Consequently, Leo Esaki recognized that when a semiconductor is heavily doped, its depletion
region narrows and exhibits a negative resistance. Negative resistance is when voltage and current are
inversely proportional to each other, meaning: if the voltage increases, the current decreases. It is also
worth noting that the concentration of impurities in tunnel diodes is 1000 times greater than the normal
p-n junction diode.

2. Schottky Diode
One characteristic that sets Schottky diode apart from normal p-n junctions diode is that its P-
type semiconductor is replaced with a metal. It can be an aluminum plate or platinum plate that replaces
the P-type semiconductor. Named after Walter H. Schottky, a German physicist, the now-junction is
called a metal-semiconductor junction or M-S junction and the formed barrier or depletion layer is
known as Schottky barrier.

Figure 2. (a) Schottky Diode


Since the majority carriers on both sides of the junction are electrons, this diode has a less
forward voltage drop than the normal p-n junctions. Silicon diodes have a voltage drop of 0.6 to 0.7
volts, while a Schottky diode has a voltage drop of 0.2 to 0.3 volts. Although Schottky diodes have the
same threshold voltage as Germanium diodes, the latter has a slower switching speed compared to
Schottky diodes. Because in a Schottky diodes, there is no exchanging and re-exchanging of electrons
and holes across the junction, therefore the switching speed is much faster. This is the reason why
Schottky diodes are very useful in high-speed switching power circuits.

3. Varactor Diode
When looking at a normal diode in reverse bias, the P junction and N junction are conducting
and can be treated as two plates while the depletion region in between is the insulating dielectric. Thus,
it resembles a capacitor.

Figure 3. (a) A Varactor diode on Reverse Bias


The Varactor diode won its name from variable capacitor and only operates when in reverse
bias. In this case, when the distance between the two conducting plates of a capacitor is increased, the
capacitance of the capacitor decreases. So in a Varactor diode, if the reverse voltage applied is very
large then, the depletion region widens and thus there is a low capacitance. That being the case, by
varying the reverse bias voltage of a Varactor diode, the capacitance can be varied so a Varactor diode
is indeed a variable capacitor. Ultimately, a Varactor diode is designed to store electric charge not to
conduct electric current.

Figure 3. (b) Varactor Diode

4. Light Emitting Diode


Light Emitting Diode (LED) basically functions just like a normal p-n junction diode. This
means that it will conduct current when it is in forward bias condition and blocks it when in reverse
bias condition. However, the electrical energy when in forward bias condition, is converted into light
energy thus the name. Moreover, the color that the diode emits depends on the actual semiconductor
compound used in forming the P-N junction.
Figure 4. (a) Light Emitting Diode

5. PIN Diode
PIN diode obtained its name from how it is constructed. Normal diodes have P-N junction, however
PIN diode has an undoped intrinsic material placed between the P-type semiconductor and N-type
semiconductor hence the P-I-N. Because of this, it has a wide depletion layer that results to the
following: (a) it has a low capacitance, (b) it has a high reverse breakdown voltage; and (c) it has a
sensitive photodetection.

Figure 5. (a) Schematic symbol of PIN diode . (b) Structure of PIN diode

6. Step Recovery Diode


Step Recovery Diode (SRD) operates like a normal P-N junction diode when in forward bias but when
it is quickly switched into reverse bias, a very less impedance will appear initially from the diode and
gradually increases because of the stored charge in the device. Now, when it is switch into forward bias
from being in reverse bias, it uses the negative pulse of the signal and the charge carriers take time to
be completely out of the junction thus a reverse current flow briefly during the negative input of the
signal. Finally when all charge is removed, the diode snaps off or turns off. The recovery time of the
current pulse is equal to the snap time as shown in Fig. 6 (b), and thus concluded that it has a speed
recovery pulses.

Figure 6. (a) Schematic symbol of SRD. (b) Voltage Signal of a Comb Generator using a SRD
7. Shockley Diode
A Shockley diode has a two types of each semiconductor arranged in an alternating pattern. So, in a
conventional diode it is a PN junction but in a Shockley, it is now a PNPN junction and is a four layer
diode. Nevertheless, like any diodes, it still has same terminal endings being the P-type semiconductor
and the N-type semiconductor.

Figure 7. (a) Structure of Shockley Diode. (b) Schematic symbol of Schockley diode

This diode only has two states: ON and OFF state thus they are classified as thyristors. Shockley diode
has 3 junctions. When voltage is applied to the two terminals, the middle junction is in reverse bias
except for the remaining junctions. If the voltage applied is less than the threshold voltage, the device
will act as an open switch and no current will flow through it. Once the threshold voltage is reached, a
very low resistance will appear due to the breakdown of the middle junction and current will start to
flow.
Ultimately, when a reverse voltage is applied to the terminals, the middle junction is in forward bias
and the remaining junctions are in reverse bias. Reverse current will flow once the breakdown voltage
is overcome but this occurrence produces heat and will ruin the entire diode. So to have the device as
an open switch, the reverse breakdown voltage should not be reached.

8. Avalanche Diode
9. Large Signal Diode
10. Small Signal Diode
11. BARITT Diode
12. Vacuum Diode
13. Gold Doped Diode
14. Gunn Diode
15. Super Barrier Diode

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