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Assignment Problems

The document contains numerical problems related to semiconductor devices and circuits. Problem 1 asks to design a circuit to establish specific current and voltage values using transistor characteristics. Problems 2-7 relate to conductivity expressions and intrinsic conductivity. Problems 8-12 cover additional circuit analysis problems. Problems 13-15 involve band diagrams, surface potentials, and threshold voltages for MOS capacitors. Problems 16-18 calculate threshold voltages, carrier concentrations, transistor currents, and Z/L ratios for n-channel and p-channel MOSFETs using given device parameters.

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Arkajyoti Saha
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179 views12 pages

Assignment Problems

The document contains numerical problems related to semiconductor devices and circuits. Problem 1 asks to design a circuit to establish specific current and voltage values using transistor characteristics. Problems 2-7 relate to conductivity expressions and intrinsic conductivity. Problems 8-12 cover additional circuit analysis problems. Problems 13-15 involve band diagrams, surface potentials, and threshold voltages for MOS capacitors. Problems 16-18 calculate threshold voltages, carrier concentrations, transistor currents, and Z/L ratios for n-channel and p-channel MOSFETs using given device parameters.

Uploaded by

Arkajyoti Saha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Numerical-1

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Numerical-2

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Numerical-3
Design the circuit in the following Fig. to establish IC= 0.2 mA and VC
= 0.5 V. The transistor exhibits vBE of 0.8 V at iC= 1 mA, and β=100.

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Numerical-4

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Numerical-5

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Numerical-6

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Numerical-7

Considering conductivity as a function of electron concentration,


obtain expression of minimum conductivity and corresponding
electron concentration at which conductivity is minimum. Is
instrinsic conductivity the minimum conductivity?

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Numerical-8,9

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Numericals-10,11

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Numerical-12

Also calculate conductance and transconductance

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Numericals-13-15

Q.13 Draw band diagram, distribution of charge, electric field and


electrostatic potential for an ideal n-channel MOS capacitor in
inversion.
Q.14 An n-type silicon sample has a uniform donor concentration Nd
= 5 x 1015 cm-3.Calculate the surface potential required a) to make the
surface intrinsic b) to bring strong inversion at the surface. Write your
answer with proper sign.
Q.15 Consider a MOS capacitor with Silicon substrate with NA=2 x
1016 cm-3 If dox=100 nm, a) Calculate Φms if electron affinity
for Si is 4.05 eV. Draw a neat band diagram indicating this
calculation.

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Numerical-15-18

• Q.16 a) Calculate the VT of Si p-channel MOSFET for an n+ polysilicon gate with a


SiO2gate oxide of thickness of 100 Å with dielectric constant 3.9, Nd = 5 x 1017 cm-3,
and a fixed oxide charge of 5×1010 qC/cm2 , Φms = -0.3 eV.
b) Calculate electron and hole concentrations in the semiconductor near the interface and
deep in the substrate during accumulation and inversion.
• Q.17 Calculate the drain current, gD and gm of an n-channel MOSFET with Z/L=10,
Vth=0.5V, channel mobility µn=300cm2/V-sec and oxide thickness 0.12 µm with a)
VD=0.2V b) VD=2V and c) in the saturation. Assume VG= 3V in all calculations.
• Q.18 n- channel and p-channel MOSFETs are to be designed such that both have
saturation current of 2 mA when Gate to source voltage is 5V for n-MOSFET and -5V
for p-MOSFET. The other parameters are as following. Oxide thickness dox=30 nm,
µn=500cm2/V-sec, µh=300cm2/V-sec, VT=0.7 n-MOSFET, VT=-0.7 for p-MOSFET.
Calculate the Z/L ratio for n-MOSFET and p-MOSFET.

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