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    ITRS Road Map2013 PDF

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    A.R.Priyarenjini
    This document presents the ORTC 2013 technology trend targets summary table, which outlines key targets for logic, flash memory, DRAM, and FinFET technologies from 2013 to 2028. The table includes targets for transistor gate pitch, cell sizes, gate lengths, power supply voltages, clock speeds, and wafer sizes. It notes that high volume 450mm wafer production is targeted to begin in 2018. The document provides context that the targets are from the PIDS working group but are still being calibrated, and it links to more details in the full 2013 International Technology Roadmap for Semiconductors.

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    ITRS Road Map2013 PDF

    Uploaded by

    A.R.Priyarenjini
    73 views1 page
    This document presents the ORTC 2013 technology trend targets summary table, which outlines key targets for logic, flash memory, DRAM, and FinFET technologies from 2013 to 2028. The table includes targets for transistor gate pitch, cell sizes, gate lengths, power supply voltages, clock speeds, and wafer sizes. It notes that high volume 450mm wafer production is targeted to begin in 2018. The document provides context that the targets are from the PIDS working group but are still being calibrated, and it links to more details in the full 2013 International Technology Roadmap for Semiconductors.

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    This document presents the ORTC 2013 technology trend targets summary table, which outlines key targets for logic, flash memory, DRAM, and FinFET technologies from 2013 to 2028. The table includes targets for transistor gate pitch, cell sizes, gate lengths, power supply voltages, clock speeds, and wafer sizes. It notes that high volume 450mm wafer production is targeted to begin in 2018. The document provides context that the targets are from the PIDS working group but are still being calibrated, and it links to more details in the full 2013 International Technology Roadmap for Semiconductors.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    73 views1 page

    ITRS Road Map2013 PDF

    Uploaded by

    A.R.Priyarenjini
    This document presents the ORTC 2013 technology trend targets summary table, which outlines key targets for logic, flash memory, DRAM, and FinFET technologies from 2013 to 2028. The table includes targets for transistor gate pitch, cell sizes, gate lengths, power supply voltages, clock speeds, and wafer sizes. It notes that high volume 450mm wafer production is targeted to begin in 2018. The document provides context that the targets are from the PIDS working group but are still being calibrated, and it links to more details in the full 2013 International Technology Roadmap for Semiconductors.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    1

    Table ORTC1 Summary 2013 ORTC Technology Trend Targets


    (click this link for the detailed table)

    Year of Production 2013 2015 2017 2019 2021 2023 2025 2028

    Logic Industry "Node Name" Label "16/14" "10" "7" "5" "3.5" "2.5" "1.8"
    Logic ½ Pitch (nm) 40 32 25 20 16 13 10 7
    Flash ½ Pitch [2D] (nm) 18 15 13 11 9 8 8 8
    DRAM ½ Pitch (nm) 28 24 20 17 14 12 10 7.7
    FinFET Fin Half-pitch (new) (nm) 30 24 19 15 12 9.5 7.5 5.3
    FinFET Fin Width (new) (nm) 7.6 7.2 6.8 6.4 6.1 5.7 5.4 5.0
    6-t SRAM Cell Size(um2) [@60f2] 0.096 0.061 0.038 0.024 0.015 0.010 0.0060 0.0030
    MPU/ASIC HighPerf 4t NAND Gate Size(um2) 0.248 0.157 0.099 0.062 0.039 0.025 0.018 0.009
    4-input NAND Gate Density (Kgates/mm) [@155f2] 4.03E+03 6.37E+03 1.01E+04 1.61E+04 2.55E+04 4.05E+04 6.42E+04 1.28E+05

    Flash Generations Label (bits per chip) (SLC/MLC) 64G /128G 128G /256G 256G / 512G 512G / 1T 512G / 1T 1T / 2T 2T / 4T 4T / 8T

    Flash 3D Number of Layer targets (at relaxed Poly half pitch) 16-32 16-32 16-32 32-64 48-96 64-128 96-192 192-384
    Flash 3D Layer half-pitch targets (nm) 64nm 54nm 45nm 30nm 28nm 27nm 25nm 22nm
    DRAM Generations Label (bits per chip) 4G 8G 8G 16G 32G 32G 32G 32G

    450mm Production High Volume Manufacturing Begins (100Kwspm) 2018

    Vdd (High Performance, high Vdd transistors)[**] 0.86 0.83 0.80 0.77 0.74 0.71 0.68 0.64
    1/(CV/I ) (1/psec) [**] 1.13 1.53 1.75 1.97 2.10 2.29 2.52 3.17
    On-chip local clock MPU HP [at 4% CAGR] 5.50 5.95 6.44 6.96 7.53 8.14 8.8 9.9
    Maximum number wiring levels [unchanged 13 13 14 14 15 15 16 17

    MPU High-Performance (HP) Printed Gate Length (GLpr) (nm) [**] 28 22 18 14 11 9 7 5

    MPU High-Performance Physical Gate Length (GLph) (nm) [**] 20 17 14 12 10 8 7 5

    ASIC/Low Standby Power (LP) Physical Gate Length (nm) (GLph)[**] 23 19 16 13 11 9 8 6

    ** Note: from the PIDS working group data; however, the calibration of Vdd, GLph, and I/CV is ongoing for improved targets in 2014 ITRS work

    ORTC [PREVIOUS ITRS VERSIONS] TABLE TWG CHAPTER REFERENCE MATRIX:


    • Table 2a,b DRAM and Flash Model Characteristics – See PIDS
    • Table 2c,d MPU/ASIC Model Characteristics – See Design
    • Table 3 Lithography and Wafer Size Trends – See Litho and Factory Integration
    • Table 4 Performance of Packaged Chips – See Assembly and Packaging
    • Table 5 Lithography Mask Counts and Defect Densities – See Lithography and Yield Enhancement
    • Table 6 Power Supply and Power Dissipation – See PIDS and Design
    • Table 7 Cost – Industry needs continuous -29% Cost/Function reduction; and Wafer Generation Productivity
    Improvements needed to compensate for increasing technology insertion costs – see Factory Integration

    LINK TO ITRS 2013 FULL EDITION DETAILS

    THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS: 2013


    LINK TO ITRS 2013 FULL EDITION DETAILS

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